High Efficiency Thyristor



Similar documents
MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics

BTW67 and BTW69 Series

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

5STP 21H4200 Old part no. TV

Final data. Maximum Ratings Parameter Symbol Value Unit

SPW32N50C3. Cool MOS Power Transistor V T jmax 560 V

logic level for RCD/ GFI applications

5STP 30T1800 Old part no. T 989C

5STP 06T1600 Old part no. T 906C

PINNING - TO220AB PIN CONFIGURATION SYMBOL

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD rev. A 02/07. Major Ratings and Characteristics

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD rev. B 10/06. Description/ Features

OptiMOS Power-Transistor Product Summary

logic level for RCD/ GFI/ LCCB applications

High Performance Schottky Rectifier, 1 A

N-channel enhancement mode TrenchMOS transistor

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 3.0 A

Features. Symbol JEDEC TO-220AB

logic level for RCD/ GFI/ LCCB applications

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

Thyristor/Diode Modules M## 501 MCC MCD MDC

CoolMOS TM Power Transistor

SIPMOS Small-Signal-Transistor

High Performance Schottky Rectifier, 1.0 A

C106 Series. Sensitive Gate Silicon Controlled Rectifiers

BTA40, BTA41 and BTB41 Series

D-PAK version of BUK117-50DL

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C

IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C

OptiMOS 3 Power-Transistor

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

AUIRLR2905 AUIRLU2905

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

5SDD 92Z0401. Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m. Types.

19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD rev. B 04/06. Major Ratings and Characteristics

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

SMD version of BUK118-50DL

Schottky Rectifier, 1 A

Dual Common-Cathode Ultrafast Plastic Rectifier

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

OptiMOS TM Power-Transistor

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

OptiMOS 3 Power-Transistor

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Schottky Rectifier, 100 A

IRFP460LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

Schottky Rectifier, 1.0 A

PMEG3005EB; PMEG3005EL

BYT60P-1000 BYT261PIV-1000

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Small Signal Fast Switching Diode

Standard Recovery Diodes, (Stud Version), 40 A

High and Low Side Driver

BTW N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

STPS5L60. Power Schottky rectifier. Description. Features

N-Channel 20-V (D-S) 175 C MOSFET

TISP4500H3BJ Overvoltage Protector

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

TISP9110LDM Overvoltage Protector

STW20NM50 N-CHANNEL Tjmax Ω - 20ATO-247 MDmesh MOSFET

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD ,500

IRF740 N-CHANNEL 400V Ω - 10A TO-220 PowerMESH II MOSFET

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Teccor brand Thyristors EV Series 0.8 Amp Sensitive SCRs

IRLR8729PbF IRLU8729PbF

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

PMEG2020EH; PMEG2020EJ

PMEG3015EH; PMEG3015EJ

BTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

0.185 (4.70) (4.31) (1.39) (1.14) Features (15.32) (14.55) (2.64) (2.39)

P-Channel 20 V (D-S) MOSFET

AN2703 Application note

Transcription:

LE2HB High Efficiency hyristor 2 M.4 Single hyristor Part number LE2HB Backside: anode 2 Features / dvantages: pplications: Package: O-247 hyristor for line frequency Planar passivated chip Long-term stability Line rectifying 5/6 Hz Softstart motor control Motor control Power converter power control Lighting and temperature control ndustry standard outline ohs compliant Epoxy meets UL 94- erms onditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. ue to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 25 XYS all rights reserved 25827b

LE2HB hyristor Symbol efinition onditions 2 2 25 25 atings typ. max. forward voltage drop 25.7 SM/SM M/M / (MS) 2 2 5 25 25 threshold voltage 5.82 for power loss calculation only r slope resistance 5.2 mω thermal resistance junction to case.2 K/ thj P tot total power dissipation 25 22 P GM P G 25 SM max. forward surge current t ms; (5 Hz), sine 45 t 8, ms; (6 Hz), sine J junction capacitance 4 f MHz 25 86 max. gate power dissipation t P µs 5 average gate power dissipation t ms; (5 Hz), sine t 8, ms; (6 Hz), sine min. 2 5 5.78.4.85 6 t µs P 5 ²t value for fusing t ms; (5 Hz), sine 45 (di/dt) cr average forward current MS forward current critical rate of rise of current 8 sine t 8, ms; (6 Hz), sine t ms; (5 Hz), sine t 8, ms; (6 Hz), sine 5 5..9 4.7 4.25.5 Unit µ m k²s k²s k²s k²s pf 5 ; f 5 Hz t P 2 µs; di G /dt.45 /µs; repetitive, G.45; ⅔ M non-repet., (dv/dt) critical rate of rise of voltage ⅔ M 5 cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current / / thh thermal resistance case to heatsink.5 GK ; method (linear voltage rise) G gate trigger voltage 6 25-4 95. 6.5 5.89 5 5 k k k /µs /µs /µs.5 G gate trigger current 6 25 4 m -4.6 8 m G gate non-trigger voltage ⅔.2 M 5 G gate non-trigger current 5 m L latching current t p µs 25 5 m G.45; di G /dt.45 /µs H holding current 6 GK 25 m t gd gate controlled delay time ½ 25 2 µs M G.5 ; di G /dt.5 /µs t q turn-off time ; ; ⅔ M 25 5 µs di/dt /µs dv/dt 2 /µs t p 2 µs K/ 25 XYS all rights reserved 25827b

LE2HB Package atings Symbol efinition onditions min. typ. max. Unit MS MS current per terminal 7 virtual junction temperature -4 5 op operation temperature -4 25 eight M F O-247 stg storage temperature -4 5 mounting torque.8 mounting force with clip 2 6.2 2 g Nm N Product Marking Part description Logo Part No. ssembly Line ssembly ode ate ode XYS XXXXXXXXX Zyyww abcd L E 2 HB hyristor (S) High Efficiency hyristor (up to 2) urrent ating [] Single hyristor everse oltage [] O-247 () Ordering Standard Ordering Number Marking on Product elivery Mode Quantity ode No. LE2HB LE2HB ube 5648 Similar Part Package oltage class LE2KB O-264 () 2 Equivalent ircuits for Simulation * on die level 5 hyristor max threshold voltage.82 max slope resistance * 2.7 mω 25 XYS all rights reserved 25827b

LE2HB Outlines O-247 E 2 Ø P Ø P 2 Q 2x E2 L 2x b2 2 b4 2x e L x b S E 4 Sym. nches Millimeter min. max. min. max..85.29 4.7 5..87.2 2.2 2.59 2.59.98.5 2.49.89.845 2.79 2.45 E.6.64 5.48 6.24 E2.7.26 4. 5.48 e.25 BS 5.46 BS L.78.8 9.8 2. L -.77-4.49 Ø P.4.44.55.65 Q.22.244 5.8 6.9 S.242 BS 6.4 BS b.9.55.99.4 b2.65.94.65 2.9 b4.2.5 2.59.4 c.5.5.8.89.55 -.7-2.2.5.5.5 E.5 -.45 - Ø P -.29-7.9 2 25 XYS all rights reserved 25827b

LE2HB hyristor 5 5 Hz, 8% M 9 [] 5 25 5 25 8 SM 7 [] 6 5 45 25 2 t [ 2 s] 45 25.5..5 [] 4.. t [s] 2 4 5 6 7 8 9 t [ms] Fig. Forward characteristics Fig. 2 Surge overload current Fig. 2 t versus time (- ms) G [] : G, 5 2: G, 25 : G, -4 2 4 5 6 t gd [µs] typ. Limit 25 2 8 ()M 6 [] 4 dc.5.4..7.8. G [m] 4: P G.5 5: P GM 6: P GM Fig. 4 Gate trigger characteristics G [m] Fig. 5 Gate controlled delay time 2 25 5 75 25 5 75 [ ] Fig. 6 Max. forward current at case temperature 2 6 P () [] 2 8 4 dc.5.4..7.8 25 5 75 25 () [] 5 5 amb [ ].24.2 thh.4.6.6.8 Z. thj 2..2 4. [K/] i thi (K/) t i (s).8.2. 2.8..4.2.2 4.4.5 5.95.4. t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature Fig. 8 ransient thermal impedance 25 XYS all rights reserved 25827b