PD - 9569 NSULTED GTE BPOLR TRNSSTOR RG4B30UPbF UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-220B package Lead-Free G E n-channel ES = 600 E(on) typ. =.95 @ GE = 5, = 2 Benefits Generation 4 GBTs offer highest efficiency available GBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBTs bsolute Maximum Ratings Parameter Max. Units ES ollector-to-emitter Breakdown oltage 600 @ T = 25 ontinuous ollector urrent 23 @ T = 0 ontinuous ollector urrent 2 M Pulsed ollector urrent 92 LM lamped nductive Load urrent 92 GE Gate-to-Emitter oltage ± 20 E R Reverse oltage valanche Energy ƒ mj P D @ T = 25 Maximum Power Dissipation 0 P D @ T = 0 Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance TO-220B Parameter Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, Flat, Greased Surface 0.50 /W R θj Junction-to-mbient, typical socket mount 80 Wt Weight 2 (0.07) g (oz) www.irf.com 04/22/04
RG4B30UPbF Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions (BR)ES ollector-to-emitter Breakdown oltage 600 GE = 0, = 250µ (BR)ES Emitter-to-ollector Breakdown oltage 8 GE = 0, =.0 (BR)ES / T J Temperature oeff. of Breakdown oltage 0.63 / GE = 0, =.0m.95 2. = 2 GE = 5 E(ON) ollector-to-emitter Saturation oltage 2.52 = 23 See Fig.2, 5 2.09 = 2, T J = 50 GE(th) Gate Threshold oltage 3.0 6.0 E = GE, = 250µ GE(th) / T J Temperature oeff. of Threshold oltage -3 m/ E = GE, = 250µ g fe Forward Transconductance 3. 8.6 S E = 0, = 2 250 GE = 0, E = 600 ES Zero Gate oltage ollector urrent µ 2.0 GE = 0, E =, T J = 25 00 GE = 0, E = 600, T J = 50 GES Gate-to-Emitter Leakage urrent ±0 n GE = ±20 Switching haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 50 75 = 2 Q ge Gate - Emitter harge (turn-on) 8. 2 n = 400 See Fig.8 Q gc Gate - ollector harge (turn-on) 8 27 GE = 5 t d(on) Turn-On Delay Time 7 t r Rise Time 9.6 T J = 25 ns t d(off) Turn-Off Delay Time 78 20 = 2, = 480 t f Fall Time 97 50 GE = 5, R G = 23Ω E on Turn-On Switching Loss 0.6 Energy losses include "tail" E off Turn-Off Switching Loss 0.20 mj See Fig.,, 3, 4 E ts Total Switching Loss 0.36 0.50 t d(on) Turn-On Delay Time 20 T J = 50, t r Rise Time 3 = 2, = 480 ns t d(off) Turn-Off Delay Time 80 GE = 5, R G = 23Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 0.73 mj See Fig. 3, 4 L E nternal Source nductance 7.5 nh Measured 5mm from package ies nput apacitance 0 GE = 0 oes Output apacitance 73 pf = 30 See Fig.7 res Reverse Transfer apacitance 4 ƒ =.0MHz Notes: Repetitive rating; GE = 20, pulse width limited by max. junction temperature. ( See fig. 3b ) = 80%( ES ), GE = 20, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
RG4B30UPbF 35 30 25 For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power D issipation = 2W Triangular wave: lamp voltage: 80% of rated Load urrent ( ) 20 5 Square wave: 60% of rated voltage 5 deal diodes 0 0. 0 f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 0 0, ollector-to-emitter urrent () T J = 25 T J = 50 = 5 GE = 20µ s PULSE W DTH 0. 5 µ s PULSE W DTH 0. 0. 5 6 7 8 9 2 E, ollector-to-em itter oltag e () GE, Gate-to-Em itter oltag e (), ollector-to-emitter urrent () T = 50 J T = 25 J Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics www.irf.com 3
RG4B30UPbF Maximum D ollector urrent ( 25 20 5 5 GE = 5 E, ollector-to-emitter oltage () 3.0 2.5 2.0 GE = 5 80µ s PULSE W DTH = 24 = 2 = 6.0 0 25 50 75 0 25 50 T, ase Temperature ( ).5-60 -40-20 0 20 40 60 80 0 20 40 60 T, Junction Temperature ( ) J Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter oltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SN G LE P ULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase 4 www.irf.com
RG4B30UPbF, apacitance (pf) 2000 600 200 800 400 GE = 0, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res GE, Gate-to-Em itter oltage () 20 6 2 8 4 E = 400 = 2 0 0 E, ollector-to-emitter oltag e () 0 0 20 30 40 50 Q g, Total Gate harg e (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter oltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter oltage Total Switching Losses (mj) 0.5 0.4 0.3 = 480 GE = 5 T J = 25 = 2 Total Switching Losses (mj) R G GE = 23 Ω = 5 = 480 = 2 4 = 2 = 6.0 0.2 0 20 30 40 50 60 R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance 0. -60-40 -20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( ) Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
RG4B30UPbF Total Switching Losses (mj).6.2 0.8 0.4 R G = 23 Ω T J = 50 = 480 GE = 5, ollector-to-emitter urrent () 00 0 GE = 20 T = 25 J SFE OPERTNG RE 0.0 0 20 30, ollector-to-emitter urrent () 0. 0 00, ollector-to-emitter oltage () E Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6 www.irf.com
RG4B30UPbF 50 00 L * D.U.T. 0-480 480µF 960 R L = 480 4 X @25 * Driver same ty pe as D.U.T.; c = 80% of ce(max) * Note: Due to the 50 power supply, pulse width and inductor will increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit 50 00 L Driver* D.U.T. ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., = 480 90% ƒ % 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) www.irf.com 7
RG4B30UPbF TO-220B Package Outline Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) 2 3 4 6.47 (.255) 6. (.240) 3.78 (.49) 3.54 (.39) - -.5 (.045) MN 4.06 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) LED SSGNMENTS LED SSGNMENTS HEXFET GBTs, opk - GTE - GTE 2 - DR N - GTE 2- DRN 3 - SOUR E 2- OLLETOR 3- SOURE 4 - DR N 3- EMTTER 4- DRN 4- OLLETOR.40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) NOTES: DMENSONNG & TOLERNNG PER NS Y4.5M, 982. 3 OUTLNE ONFORMS TO JEDE OUTLNE TO-220B. 2 ONTROLLNG DMENSON : NH 4 HETSNK & LED MESUREMENTS DO NOT NLUDE BURRS. TO-220B Part Marking nformation EXMPLE: T HS S N R F LOT ODE 789 S S EMBLED ON WW 9, 997 N THE SSEMBLY LNE "" Note: "P" in assem bly line position indicates "Lead-Free" NT E R NT ONL RETFER LOGO SSEMBLY LOT ODE PRT NUMBER DTE ODE YER 7 = 997 WEEK 9 LNE Data and specifications subject to change without notice. R WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (3) 252-75 T Fax: (3) 252-7903 isit us at www.irf.com for sales contact information. 04/04 8 www.irf.com
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