Future Paths for Components & Systems
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1 Future Paths for Components & Systems ÉCOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE Adrian M. Ionescu Ecole Polytechnique Fédérale de Lausanne Adrian M. Ionescu, ICT 2008, Lyon 1
2 Summary Introduction: invent the future! Binary switch as key element of electronic computation & nano-cmos vampire switch Future paths for components & systems: Other ultra-low power electronic switches Other materials: carbon electronics? Energy efficient computing: from min energy switching to reversible computing & QCA Conclusion Adrian M. Ionescu, ICT 2008, Lyon 2
3 Introduction (1) The best way to predict the future is to invent it. Alan Kay Possible barrier: We see things not as they are but as we are. Today nanolectronics = silicon technology and CMOS, predictions for the future of electronic components and systems are heavily influenced by this reality. Adrian M. Ionescu, ICT 2008, Lyon 3
4 Introduction (2) Natural analog computation Flies acrobatically Recognizes patterns Navigates Communicates Consumes: J/op High-speed digital computation Consumes: J/op Adrian M. Ionescu, ICT 2008, Lyon 4
5 Binary switch as key element of electronic computation & nano- CMOS vampire switch Adrian M. Ionescu, ICT 2008, Lyon 5
6 Paradigm of information encoding Konrad Zuse (1941) machine Use binary numbers to encode information Represent binary digits as on/off state of a current switch Problems with shrinking the switch: - Difficult to obtain good on/off ratio - Current becomes small, resistance high Electromagnetic relay Vacuum tube Solid state transistors Integrated circuit Molecule? Spin? Other? New approaches to representing information required. Adrian M. Ionescu, ICT 2008, Lyon 6
7 Quasi-Ideal Nanoelectronic Switch I D (log) Ioff Ion Quasi-ideal: SS ~ 0 Ioff ~ 0 V T ~0, VDD 0 V G Quasi-ideal binary switch, what matters: - 2 stable states (off, on) - Ion: as high as possible - Ioff: as low as possible - Ion/Ioff > abrupt swing (mv/decade) - very fast (<ns) A quasi-ideal nanoelectronic switch has ZERO standby power and offers the wanted on current! It should stay very fast! Adrian M. Ionescu, ICT 2008, Lyon 7
8 What about nano-cmos switch? I D (log) ideal Ion Ioff MOSFET switch: RT Small swing switch V G MOSFET is a vampire switch at nanoscale New Small Swing Switch = New physics SSS: very low standby power (green switch) Adrian M. Ionescu, ICT 2008, Lyon 8
9 General: critical standby electricity Standby electricity is the energy consumed by appliances when they are not performing their main functions or when they are switched off. Energy wasted: standby loss or vampire power US vampire power costs $3B/year! Modern electrical and electronic appliances, even those having on/off switches, consume power for standby functions: standby loss in France is ~7% of the total residential electricity consumption Adrian M. Ionescu, ICT 2008, Lyon 9
10 Future paths for components & systems Adrian M. Ionescu, ICT 2008, Lyon 10
11 Steep swing switches = LSBP Other device physics than MOSFET, new component-level architecture for low standby power: Tunneling devices Impact ionization devices Electro-mechanical devices Ferroelectric devices Other? Co-integrate with high-performace silicon CMOS Materials not limited to silicon (III-V s, hetero, ferro) See program by DARPA: Steep-Subthreshold-slope Transistors for Electronics with Extremely-Low Power (STEEP): Adrian M. Ionescu, ICT 2008, Lyon 11
12 Emerging Research Device Technology Candidates Evaluated Determine which, if any, current approaches to providing a Beyond CMOS information processing technology(ies) is (are) ready for more detailed roadmapping and enhanced investment. (Jim Hutchby, ERD, ITRS) 7 technology candidates evaluated in July 2008: Nano-electro Mechanical Switches Collective Spin Devices Spin Torque Transfer Devices Atomic Switch / Electrochemical Metallization Carbon-based Nanoelectronics recommended Single Electron Transistors CMOL / Field Programmable Nanowire Interconnects Adrian M. Ionescu, ICT 2008, Lyon 12
13 Carbon Electronics: potential Potential Impact geometric scaling: alternate MOSFET structure Provide a high mobility, high carrier velocity, MOSFET channel replacement material. Provide a technology platform enabling a new Beyond CMOS information processing paradigm Carbon nanotubes exceptionally long mean free path & mobility > 50,000 cm 2 /Vsec at RT: ballistic FETs ~ 100 nm. much lower capacitance of ~10 af (for a diameter of CNT =1 nm, L = 10 nm). Graphene ambipolar carrier conduction by electrical field and a high mobility ~100,000 cm 2 /V.sec at RT (better than InSb). wide variety of novel quantum transport phenomena and novel devices. Adrian M. Ionescu, ICT 2008, Lyon 13
14 Carbon Electronics: Control! Challenges for CNTs: Control: over the chirality and diameter of nanotubes (and the associated electronic bandgap) Densely packed arrays: of nanotubes to achieve current levels comparable to silicon field-effect devices Challenges for graphene: Controlled growth: methods to synthesizing, growing, or depositing high quality graphene film on a suitable insulating substrates for further device processing Edge control: atomic precision of the physical and chemical structures of the edges, otherwise the electron transport would be dominated by the edge disorder of graphene nanostructures Source: White Paper for ITRS ERD Working Group, 2008, P. Kim, Columbia. Adrian M. Ionescu, ICT 2008, Lyon 14
15 Switching Small Scale Trend of min ITRS Transistor '97-'03 Gate Energy Switching Trends Energy CV 2 /2 gate CVV/2 energy, Joules J 1.E-14 1.E-15 1.E-16 1.E-17 1.E-18 1.E-19 1.E-20 1.E Historical trendline 90 Node numbers (nm DRAM hp) Room-temperature 100 kt reliability limit One electron volt Room-temperature kt thermal energy Room-temperature von Neumann - Landauer limit LP min gate energy, aj HP min gate energy, aj 100 k(300 K) ln(2) k(300 K) 1 ev k(300 K) Practical limit for CMOS? Trend implied by ITRS targets fj aj zj 1.E Source: Michael P. Frank Year Adrian M. Ionescu, ICT 2008, Lyon 15
16 Transistors at molecular densities Suppose in each clock cycle a single electron moves from power supply (1V) to ground. V dd Power dissipation (Watts/cm 2 ) Frequency (Hz) devices/cm devices/cm devices/cm devices/cm ,000,000 1,600, ,000 16, ,600, ,000 16,000 1, ,000 16,000 1, , ITRS: 9nm gate length, 10 9 logic transistors/cm 3x10 10 Hz for 2016 Source: Craig S. Lent, University of Notre Dame Adrian M. Ionescu, ICT 2008, Lyon 16
17 The von Neumann-Landauer (VNL) bound & reversible computing To lose, obliviously erase, or otherwise irreversibly forget 1 bit s worth of known information involves/requires the eventual dissipation of at least k B T ln2 amount of free energy to an environment at some temperature T. Reversible computing: A paradigm for digital information processing in which all (or most) of the digital operations performed (logic, communication, and storage) carry out logically reversible (functionally invertible) transformations of the local digital state. don t lose any logical information. VNL bound does not apply. careful engineered implementations able to have E diss << kt ln 2. Adrian M. Ionescu, ICT 2008, Lyon 17
18 Minimum energy for computation Question: Is there a fundamental lower limit to the amount of energy that must be dissipated to compute a bit? Answer: NO -- Landauer (1961) Bennett (1982): full computation can be done without erasure. logical reversibility physical reversibility Adrian M. Ionescu, ICT 2008, Lyon 18
19 Quantum Cellular Automata: reversible/irreversible Energy/E k k B Tlog(2) irreversible reversible Direct time-dependent calculations with QCA logic shows that logically reversible circuit can dissipate less than k B Tlog(2). Source: Craig S. Lent, University of Notre Dame Adrian M. Ionescu, ICT 2008, Lyon 19
20 Conclusion Possible future paths for Components & Systems: Power & Performance: Low standby power by steep swing switches on high-performance CMOS platforms. Higher Performance: Carbon electronics. Long term dense computing: Energy efficient computing. Reversible computing? Adrian M. Ionescu, ICT 2008, Lyon 20
21 Thank you! Adrian M. Ionescu, ICT 2008, Lyon 21
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