Low-cost Printed Electronic Nose Gas Sensors for Distributed Environmental Monitoring
|
|
- Chastity Waters
- 8 years ago
- Views:
Transcription
1 Low-cost Printed Electronic Nose Gas Sensors for Distributed Environmental Monitoring Vivek Subramanian Department of Electrical Engineering and Computer Sciences University of California, Berkeley RD
2 Distributed environmental monitoring Need for distributed monitoring - Identification of environmental hazards - Triggering of proactive action - Development of accurate environmental models Sensor Requirements - Ultra-low-cost - Ease of dispersal - Trainability / adaptability Our Approach: Arrayed organic FETs - Easily arrayed at low-cost via printing - Flexible for easy dispersal - Trainable via electronic nose architecture
3 Commercial E-noses ppbrae Plus $ For homeland security - Detects toxic agents, mildew Cyranose $ Can be trained to detect a wide range of odors: alcohols, chemicals, oil, food
4 Commercial Gas Sensors Vernier O 2 sensor $186 Minimax Pro H 2 sensor $199 Gas Alert Micro 3 H 2 S sensor $612
5 Arrayed Gas Sensors Molecule in ambient Map Responses Substrate A B C D Sensor Parameter Responses to different molecules Pixel Array Index Generate Chemical Signatures
6 Printing: a pathway to low-cost No lithography No vacuum processing (CVD, PVD, Etch) Reduced abatement costs Cheap substrate handling Reduced packaging costs
7 Organic Gas Sensors Gas sensing with OTFTs is a good match - Good sensitivity - Synthetic richness - Easy array integration - Low performance requirements - Short-term applications available The New York Times, April 4, 2002, illustration by Mary Ann Smith
8 OTFT Gas Sensing Absorbed through grain boundaries and reactive molecular sites Film expands Analyte changes hopping barrier height Source Odors + + Active + Material + T T Gate Dielectric Gate T Drain Analyte donates carriers or activates existing donors Analyte introduces traps and scattering sites
9 Low-cost Fabrication Inkjet deposition of organic material allows integration of sensor array Ultra-low cost requires integration of supporting circuitry
10 Printed Transistors Gate electrode is printed using gold nanocrystals Polymer dielectric is deposited via inkjet Low-temperature anneal forms S/D stripes and connections (in plane of page) Substrate Substrate Substrate Source / Drain contacts are printed using gold nanocrystals Various active layers are deposited via inkjet Low-temperature anneal forms gate stripe to edge of array (out of page) Substrate Substrate Substrate
11 Baseline sensor screening process The channel is exposed to the analyte, resulting in performance changes S G D Materials are characterized using a substrate-gated architecture (easy fabrication for rapid screening) A silicon substrate enables easy I/O via an edge connector
12 Sensor Characterization Switching between individual sensors is performed via a switch matrix PCB Agilent 4156 To ensure accuracy, measurements are performed with a calibrated precision semiconductor parameter analyzer.
13 Experimental Setup Valve Valve Agilent 4156 N 2 Mass Flow Controller Analyte Delivery Valve Sensor Chamber Mass Flow Meter Bubbler Exhaust Exhaust
14 Sensor Repeatability Id-Vd (Zoomed) -5.00E E-08 Id (Amps) -1.50E E E E E E E E E+00 Vd (Volts) Baseline Toluene Regen Multiple cycles can be performed with full regeneration
15 Multi-parameter sensing Transconductance Mobility baseline 60 sccm regen 100 sccm regen 1.00E E E E E E+00 gm (S) baseline 60 sccm regen 100 sccm regen 4.50E E E E E E E E E E+00 u (cm2/vs) Threshold Voltage Drain Current 0.00E E E E E E E+00 V (Volts) -6.00E E E-07 Id (Amps) baseline 60 sccm regen 100 sccm regen -8.00E E+01 baseline 60 sccm regen 100 sccm regen -1.20E E E-07
16 Sensor dynamics transient response Change in Drain Current Under Toluene Exposure -5.00E E E-09 Id (Amps) -2.00E E E E E E E Time (Minutes) Sensor response can be very slow, due to slow analyte absorption. Speed can be increased by reducing film thickness
17 Interaction Mechanisms - Sensors show a wide range of interactions, complicating analysis. Interactions include: Polar group interactions Chain / bulk interactions Swelling Percent of Baseline value I on Change in P3HT due to Acetic Acid 12 nm 40 nm 75nm 100 nm 12 nm 40 nm 75nm 100 nm Baseline Time (min) Percent of Baseline Value Baseline 20 0 I on Change in P3HT due to Ethanol 12 nm 75 nm 100nm Time (min)
18 Differential sensitivity pathway to an electronic nose? Nose Response to Water (Pentacene) Nose Response to Water (P3HT) Id (Amps) -1.00E E E E E E E Time (Minutes) Id (Amps) -7.00E E E E E E E E E Time (Minutes) Nose Response to Water (P3OT) -1.50E E-08 Id (Amps) -2.50E E E E E Time (Minutes)
19 Demonstration of basic electronic nose functionality Nose Response to Water and Milk Percentage of Baseline Current Milk Water Pentacene P3OT P3HT Time (Minutes)
20 Organic Transistor Stability Mobility (cm 2 /Vs) mu (sat) mu (lin) Ion (sat) -4.E-07-3.E-07-2.E-07-1.E-07 Drive Current (A) 0 7/14 7/15 7/16 7/17 Time (Date) 0.E+00 Implication: We must either improve dielectric interface or use V T -insensitive differential sensing method
21 Sensing Circuits Amplify sensor response Desensitize against operational drift Integration of encapsulated and unencapsulated OTFTs Integration of sensing OTFTs with supporting OTFT or silicon CMOS circuitry
22 Sensing Circuits Crone et al, J. Appl. Phys, vol 91, pp , 2002
23 Conclusions & Future Work Organic FET-based sensors show promising responses, including transient behavior and cycle life Work remains to optimize structure and process flow, particularly in terms of stability and reliability Future Work: - Integration of latest sensing materials into printed device architecture - Deployment in testing of environmentally-relevant analytes - Enhancement of specificity through functionalization / doping
Introduction OLEDs OTFTs OPVC Summary. Organic Electronics. Felix Buth. Walter Schottky Institut, TU München. Joint Advanced Student School 2008
Felix Buth Joint Advanced Student School 2008 Outline 1 Introduction Difference organic/inorganic semiconductors From molecular orbitals to the molecular crystal 2 Organic Light Emitting Diodes Basic Principals
More informationImplementation Of High-k/Metal Gates In High-Volume Manufacturing
White Paper Implementation Of High-k/Metal Gates In High-Volume Manufacturing INTRODUCTION There have been significant breakthroughs in IC technology in the past decade. The upper interconnect layers of
More informationIntroduction to VLSI Fabrication Technologies. Emanuele Baravelli
Introduction to VLSI Fabrication Technologies Emanuele Baravelli 27/09/2005 Organization Materials Used in VLSI Fabrication VLSI Fabrication Technologies Overview of Fabrication Methods Device simulation
More informationMaterials for Organic Electronic. Jeremy Burroughes FRS FREng
Materials for Organic Electronic Applications Jeremy Burroughes FRS FREng Introduction Organic Thin Film Transistors Organic Solar Cells and Photodiodes All Printed OLED Summary 4k2k 56 Displays Panasonic
More informationPOLY(3-HEXYLTHIOPHENE) BASED FIELD-EFFECT TRANSISTORS WITH GATE SiO2 DIELECTRIC
KAPI DİELEKTRİĞİ SiO2 OLAN POLY(3HEXYLTHIOPHENE) ORGANİK ALAN ETKİLİ TRANSİSTÖR Osman ÖRNEK Sakarya University, Faculty of Education, Department of Science Education, Sakarya / Turkey osmano@sakarya.edu.tr
More informationIntel s Revolutionary 22 nm Transistor Technology
Intel s Revolutionary 22 nm Transistor Technology Mark Bohr Intel Senior Fellow Kaizad Mistry 22 nm Program Manager May, 2011 1 Key Messages Intel is introducing revolutionary Tri-Gate transistors on its
More informationOLED display. Ying Cao
OLED display Ying Cao Outline OLED basics OLED display A novel method of fabrication of flexible OLED display Potentials of OLED Suitable for thin, lightweight, printable displays Broad color range Good
More informationTowards a miniaturized micromechanical electronic nose SYWERT H. BRONGERSMA SR. PRINCIPAL RESEARCHER
Towards a miniaturized micromechanical electronic nose SYWERT H. BRONGERSMA SR. PRINCIPAL RESEARCHER e-nose: advanced sensing in complex environments Human olfactory system e-nose: array of non-specific,
More informationNeuere Entwicklungen zur Herstellung optischer Schichten durch reaktive. Wolfgang Hentsch, Dr. Reinhard Fendler. FHR Anlagenbau GmbH
Neuere Entwicklungen zur Herstellung optischer Schichten durch reaktive Sputtertechnologien Wolfgang Hentsch, Dr. Reinhard Fendler FHR Anlagenbau GmbH Germany Contents: 1. FHR Anlagenbau GmbH in Brief
More informationSupporting information
Supporting information Ultrafast room-temperature NH 3 sensing with positively-gated reduced graphene oxide field-effect transistors Ganhua Lu 1, Kehan Yu 1, Leonidas E. Ocola 2, and Junhong Chen 1 * 1
More informationChapter 2 The Study on Polycrystalline Pentacene Thin Film Transistors
Chapter 2 The Study on Polycrystalline Pentacene Thin Film Transistors 2.1 Introduction Recent focus and attention on organic thin film transistors (TFTs) resulted in dramatic performance improvements
More informationCHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Study the characteristics of energy bands as a function of applied voltage in the metal oxide semiconductor structure known
More informationAn organic semiconductor is an organic compound that possesses similar
MSE 542 Final Term Paper Title: Organic Semiconductor for Flexible Electronics Name: Chunhung Huang Introduction: An organic semiconductor is an organic compound that possesses similar properties to inorganic
More informationAmorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays
Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays J.H. Daniel 1, a, B.S. Krusor 1, N. Chopra 2, R.A. Street 1, P.M. Kazmaier 2, S.E. Ready 1, J.H. Ho 1 1 Palo Alto Research
More informationNanotechnologies for the Integrated Circuits
Nanotechnologies for the Integrated Circuits September 23, 2015 Dr. Bertrand Cambou Professor of Practice NAU, Cybersecurity School of Informatics, Computing, and Cyber-Systems Agenda The Market Silicon
More informationObservation of Long Transients in the Electrical Characterization of Thin Film BST Capacitors
Integrated Ferroelectrics, 53: 503 511, 2003 Copyright C Taylor & Francis Inc. ISSN: 1058-4587 print/ 1607-8489 online DOI: 10.1080/10584580390258651 Observation of Long Transients in the Electrical Characterization
More informationRobert G. Hunsperger. Integrated Optics. Theory and Technology. Fourth Edition. With 195 Figures and 17 Tables. Springer
Robert G. Hunsperger Integrated Optics Theory and Technology Fourth Edition With 195 Figures and 17 Tables Springer Contents 1. Introduction 1 1.1 Advantages of Integrated Optics 2 1.1.1 Comparison of
More informationGraduate Student Presentations
Graduate Student Presentations Dang, Huong Chip packaging March 27 Call, Nathan Thin film transistors/ liquid crystal displays April 4 Feldman, Ari Optical computing April 11 Guerassio, Ian Self-assembly
More informationComparison study of FinFETs: SOI vs. Bulk Performance, Manufacturing Variability and Cost
Comparison study of FETs: SOI vs. Bulk Performance, Manufacturing Variability and Cost David Fried, IBM Thomas Hoffmann, IMEC Bich-Yen Nguyen, SOITEC Sri Samavedam, Freescale Horacio Mendez, SOI Industry
More informationLeakFilm. Protecting your high-tech assets with innovative, user-friendly technology for liquid leak detection
LeakFilm Protecting your high-tech assets with innovative, user-friendly technology for liquid leak detection LeakFilm The most reliable, durable, cost-effective solution Unlike some other forms of liquid
More informationFundamentals of Mass Flow Control
Fundamentals of Mass Flow Control Critical Terminology and Operation Principles for Gas and Liquid MFCs A mass flow controller (MFC) is a closed-loop device that sets, measures, and controls the flow of
More informationIntegrated High Resolution Focal-Plane Polarization Imager
Integrated High Resolution Focal-Plane Polarization Imager Zaven K. Kalayjian, Andreas G. Andreou Johns Hopkins University Department of Electrical and Computer Engineering Baltimore, MD 118 KEYWORDS Polarization,
More informationAdvanced VLSI Design CMOS Processing Technology
Isolation of transistors, i.e., their source and drains, from other transistors is needed to reduce electrical interactions between them. For technologies
More informationCS257 Introduction to Nanocomputing
CS257 Introduction to Nanocomputing Overview of Crossbar-Based Computing John E Savage Overview Intro to NW growth methods Chemical vapor deposition and fluidic assembly Nano imprinting Nano stamping Four
More informationCONTENTS. Preface. 1.1.2. Energy bands of a crystal (intuitive approach)
CONTENTS Preface. Energy Band Theory.. Electron in a crystal... Two examples of electron behavior... Free electron...2. The particle-in-a-box approach..2. Energy bands of a crystal (intuitive approach)..3.
More informationThis paper describes Digital Equipment Corporation Semiconductor Division s
WHITEPAPER By Edd Hanson and Heather Benson-Woodward of Digital Semiconductor Michael Bonner of Advanced Energy Industries, Inc. This paper describes Digital Equipment Corporation Semiconductor Division
More informationPaper No. 4071 APPLICATION OF EQCM TO THE STUDY OF CO2 CORROSION
Paper No. 471 APPLICATION OF EQCM TO THE STUDY OF CO2 CORROSION Yang Yang, Bruce Brown and Srdjan Nešić Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering
More informationSilicon-On-Glass MEMS. Design. Handbook
Silicon-On-Glass MEMS Design Handbook A Process Module for a Multi-User Service Program A Michigan Nanofabrication Facility process at the University of Michigan March 2007 TABLE OF CONTENTS Chapter 1...
More informationDew-Point Measurement Solutions
Dew-Point Measurement Solutions www.michell.com Dew-Point Measurement Solutions Special Features No downtime Michell Instruments offers a unique sensor exchange programme, which means that you will never
More informationApplication Note AN1
TAKING INVENTIVE STEPS IN INFRARED. MINIATURE INFRARED GAS SENSORS GOLD SERIES UK Patent App. No. 799A USA Patent App. No. 9/78,7 World Patents Pending SENSOR OVERVIEW Application Note AN The Dynament
More informationField Test to Demonstrate Real-Time In-Situ Detection of Volatile Organic Compounds Hazmat Spill Center, Nevada Test Site September 19-25, 2001
Field Test to Demonstrate Real-Time In-Situ Detection of Volatile Organic Compounds Hazmat Spill Center, Nevada Test Site September 19-2, 21 Clifford K. Ho Sandia National Laboratories Albuquerque, NM
More informationLecture 12. Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12. ECE 6450 - Dr. Alan Doolittle
Lecture 12 Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12 Evaporation and Sputtering (Metalization) Evaporation For all devices, there is a need to go from semiconductor to metal.
More informationLecture 030 DSM CMOS Technology (3/24/10) Page 030-1
Lecture 030 DSM CMOS Technology (3/24/10) Page 030-1 LECTURE 030 - DEEP SUBMICRON (DSM) CMOS TECHNOLOGY LECTURE ORGANIZATION Outline Characteristics of a deep submicron CMOS technology Typical deep submicron
More informationFabrication and Characterization of N- and P-Type a-si:h Thin Film Transistors
Fabrication and Characterization of N- and P-Type a-si:h Thin Film Transistors Engineering Practical Jeffrey Frederick Gold Fitzwilliam College University of Cambridge Lent 1997 FABRCATON AND CHARACTERZATON
More informationOrganic semiconductors
Plastic (Organic) Solar Cells: Accomplishments, Challenges, and Strategies Sumit Chaudhary Assistant Professor Department of Electrical and Computer Engineering Materials Science and Engineering Iowa State
More informationDemonstration of sub-4 nm nanoimprint lithography using a template fabricated by helium ion beam lithography
Demonstration of sub-4 nm nanoimprint lithography using a template fabricated by helium ion beam lithography Wen-Di Li*, Wei Wu** and R. Stanley Williams Hewlett-Packard Labs *Current address: University
More informationThin Is In, But Not Too Thin!
Thin Is In, But Not Too Thin! K.V. Ravi Crystal Solar, Inc. Abstract The trade-off between thick (~170 microns) silicon-based PV and thin (a few microns) film non-silicon and amorphous silicon PV is addressed
More informationEffects of Tg and CTE on Semiconductor Encapsulants
Effects of Tg and CTE on Semiconductor Encapsulants Dr. Mark M. Konarski Loctite Corporation www.loctite.com Abstract As the role of direct-chip-attachment increases in the electronics industry, the reliability
More informationWinbond W2E512/W27E257 EEPROM
Construction Analysis Winbond W2E512/W27E257 EEPROM Report Number: SCA 9703-533 Global Semiconductor Industry the Serving Since 1964 15022 N. 75th Street Scottsdale, AZ 85260-2476 Phone: 602-998-9780 Fax:
More informationConductivity of silicon can be changed several orders of magnitude by introducing impurity atoms in silicon crystal lattice.
CMOS Processing Technology Silicon: a semiconductor with resistance between that of conductor and an insulator. Conductivity of silicon can be changed several orders of magnitude by introducing impurity
More informationPhotolithography. Class: Figure 12.1. Various ways in which dust particles can interfere with photomask patterns.
Photolithography Figure 12.1. Various ways in which dust particles can interfere with photomask patterns. 19/11/2003 Ettore Vittone- Fisica dei Semiconduttori - Lectio XIII 16 Figure 12.2. Particle-size
More informationPrecision Mass Flow Metering For CVD Applications.
Precision Mass Flow Metering For CVD Applications. Ir. H.J. Boer Research Department of Bronkhorst High-Tech B.V. Nijverheidsstraat 1A, 7261 AK Ruurlo The Netherlands. Tel: +31 (0)573 458800 Fax: +31 (0)573
More informationAN1837. Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas.
Order this document by /D Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today s microcontroller applications are more sophisticated
More informationOPTIMIZING OF THERMAL EVAPORATION PROCESS COMPARED TO MAGNETRON SPUTTERING FOR FABRICATION OF TITANIA QUANTUM DOTS
OPTIMIZING OF THERMAL EVAPORATION PROCESS COMPARED TO MAGNETRON SPUTTERING FOR FABRICATION OF TITANIA QUANTUM DOTS Vojtěch SVATOŠ 1, Jana DRBOHLAVOVÁ 1, Marian MÁRIK 1, Jan PEKÁREK 1, Jana CHOMOCKÁ 1,
More informationLezioni di Tecnologie e Materiali per l Elettronica
Lezioni di Tecnologie e Materiali per l Elettronica Danilo Manstretta danilo.manstretta@unipv.it microlab.unipv.it Outline Passive components Resistors Capacitors Inductors Printed circuits technologies
More informationitaltec PRINTED CIRCUITS EQUIPMENT PRINTED CIRCUITS EQUIPMENT Insulator machines Echting machines Special equipment and machines
PRINTED CIRCUITS EQUIPMENT PRINTED CIRCUITS EQUIPMENT Insulator machines Echting machines Special equipment and machines On customer request it is possible to supply: Benches for PCB Oven for PCB Chemicals
More informationE F G. Overview of the activities. SAPIE ZA Università di Roma - Laboratorio di Fotonica Molecolare
SAPIE ZA Università di Roma Dipartimento di Energetica Laboratorio di Fotonica Molecolare Francesco Michelotti E-Mail: francesco.michelotti@uniroma1.it Tel: +39 06-49.91.65.62 Workshop Future Trends in
More informationMicro-Power Generation
Micro-Power Generation Elizabeth K. Reilly February 21, 2007 TAC-meeting 1 Energy Scavenging for Wireless Sensors Enabling Wireless Sensor Networks: Ambient energy source Piezoelectric transducer technology
More informationTechnical Spotlight. The Use of Ion Chromatography in the Printed Circuit Board Industry
The Use of Ion Chromatography in the Printed Circuit Board Industry Keith M Sellers Senior Scientist Trace Laboratories East 5 North Park Dr. Hunt Valley, MD 21030 (410) 584-9099 ksellers@tracelabs.com
More informationCIRCUITS AND SYSTEMS- Assembly and Printed Circuit Board (PCB) Package Mohammad S. Sharawi ASSEMBLY AND PRINTED CIRCUIT BOARD (PCB) PACKAGE
ASSEMBLY AND PRINTED CIRCUIT BOARD (PCB) PACKAGE Mohammad S. Sharawi Electrical Engineering Department, King Fahd University of Petroleum and Minerals Dhahran, 31261 Saudi Arabia Keywords: Printed Circuit
More informationPORTER MASS FLOW MEASUREMENT AND CONTROL SYSTEMS
PORTER MASS MEASUREMENT AND CONTROL SYSTEMS PORTER: THE STANDARD OF EXCELLENCE IN MASS Porter Mass Flow products reflect nearly three decades of experience in the design and manufacture of precision instruments
More informationPulsed laser deposition of organic materials
Pulsed laser deposition of organic materials PhD theses Gabriella Kecskeméti Department of Optics and Quantum Electronics University of Szeged Supervisor: Dr. Béla Hopp senior research fellow Department
More informationTSL213 64 1 INTEGRATED OPTO SENSOR
TSL 64 INTEGRATED OPTO SENSOR SOES009A D4059, NOVEMBER 99 REVISED AUGUST 99 Contains 64-Bit Static Shift Register Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period Single-Supply
More informationChapter 7-1. Definition of ALD
Chapter 7-1 Atomic Layer Deposition (ALD) Definition of ALD Brief history of ALD ALD process and equipments ALD applications 1 Definition of ALD ALD is a method of applying thin films to various substrates
More informationMSFET 3332. MICROSENS Miniature ph Sensor Module
Product Data Sheet MSFET 3332 MICROSENS Miniature ph Sensor Module Ta2O5 gate Ion Sensitive Field Effect transistor (ISFET) The MSFET3332 ph sensor module comprises a ph-isfet sensing element, an integrated
More information(Amplifying) Photo Detectors: Avalanche Photodiodes Silicon Photomultiplier
(Amplifying) Photo Detectors: Avalanche Photodiodes Silicon Photomultiplier (no PiN and pinned Diodes) Peter Fischer P. Fischer, ziti, Uni Heidelberg, Seite 1 Overview Reminder: Classical Photomultiplier
More informationHow to measure absolute pressure using piezoresistive sensing elements
In sensor technology several different methods are used to measure pressure. It is usually differentiated between the measurement of relative, differential, and absolute pressure. The following article
More informationMOS (metal-oxidesemiconductor) 李 2003/12/19
MOS (metal-oxidesemiconductor) 李 2003/12/19 Outline Structure Ideal MOS The surface depletion region Ideal MOS curves The SiO 2 -Si MOS diode (real case) Structure A basic MOS consisting of three layers.
More informationSemiconductor doping. Si solar Cell
Semiconductor doping Si solar Cell Two Levels of Masks - photoresist, alignment Etch and oxidation to isolate thermal oxide, deposited oxide, wet etching, dry etching, isolation schemes Doping - diffusion/ion
More informationPaper Electronics. Martti Toivakka. Laboratory of Paper Coating and Converting Center for Functional Materials Åbo Akademi University
Paper Electronics Martti Toivakka Laboratory of Paper Coating and Converting Center for Functional Materials Åbo Akademi University Paper Electronics is not Electronic Paper! E Ink Amazon Kindle Fulton
More informationAnalyzing Electrical Effects of RTA-driven Local Anneal Temperature Variation
1 Analyzing Electrical Effects of RTA-driven Local Anneal Temperature Variation Vivek Joshi, Kanak Agarwal*, Dennis Sylvester, David Blaauw Electrical Engineering & Computer Science University of Michigan,
More informationSECTION 13. Multipliers. Outline of Multiplier Design Process:
SECTION 13 Multipliers VMI manufactures many high voltage multipliers, most of which are custom designed for specific requirements. The following information provides general information and basic guidance
More informationAutomotive MOSFETs in Linear Applications: Thermal Instability
Application Note, V1.0, May 2005 Automotive MOSFETs in Linear Applications: Thermal Instability by Peter H. Wilson Automotive Power N e v e r s t o p t h i n k i n g. - 1 - Table of Content 1. Introduction...
More informationThe MOS Transistor in Weak Inversion
MOFE Operation in eak and Moderate nversion he MO ransistor in eak nversion n this section we will lore the behavior of the MO transistor in the subthreshold regime where the channel is weakly inverted.
More informationPOLYMER BASED PHOTOVOLTAICS
PLYMER BASED PHTVLTAICS Novel concepts, materials and state-of-the-art performances Jan Kroon Semiconducting polymers Nobel Prize Chemistry 2000 (Alan J. Heeger, Alan G. MacDiarmid, Hideki Shirakawa) Conducting
More informationSolar Photovoltaic (PV) Cells
Solar Photovoltaic (PV) Cells A supplement topic to: Mi ti l S Micro-optical Sensors - A MEMS for electric power generation Science of Silicon PV Cells Scientific base for solar PV electric power generation
More informationDesigning a Workflow for Printed Electronics with Open Source Software
Designing a Workflow for Printed Electronics with Open Source Software Technical Report Presented to the Faculty of the School of Engineering and Applied Science University of Virginia By Robert William
More informationDESIGN, FABRICATION AND ELETRICAL CHARACTERIZATION OF SOI FINFET TRANSISTORS
DESIGN, FABRICATION AND ELETRICAL CHARACTERIZATION OF SOI FINFET TRANSISTORS Prof. Dr. João Antonio Martino Professor Titular Departamento de Engenharia de Sistemas Eletrônicos Escola Politécnica da Universidade
More informationThe MOSFET Transistor
The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls
More informationDEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015
DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015 LINX BACKGROUND Linx Consulting 1. We help our clients to succeed
More informationLecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS
Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections
More informationLecture 9 - MOSFET (I) MOSFET I-V Characteristics. October 6, 2005
6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 25 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation
More informationElectrophoretic Gold Nanoparticles Depostion On Carbon Nanotubes For NO 2 Sensors
European Network on New Sensing Technologies for Air Pollution Control and Environmental Sustainability - EuNetAir COST Action TD1105 2 nd International Workshop EuNetAir on New Sensing Technologies for
More informationNanoparticle Inks for Printed Electronics
NanoMas Technologies, Inc Nanoparticle Inks for Printed Electronics Zhihao Yang President & CTO NanoMas Technologies, Inc. zhihao.yang@nanomastech.com Technology Revolutions in Electronics for the Past
More informationCO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1
CO2005: Electronics I The Field-Effect Transistor (FET) Electronics I, Neamen 3th Ed. 1 MOSFET The metal-oxide-semiconductor field-effect transistor (MOSFET) becomes a practical reality in the 1970s. The
More informationDevelopment of New Inkjet Head Applying MEMS Technology and Thin Film Actuator
Development of New Inkjet Head Applying MEMS Technology and Thin Film Actuator Kenji MAWATARI, Koich SAMESHIMA, Mitsuyoshi MIYAI, Shinya MATSUDA Abstract We developed a new inkjet head by applying MEMS
More informationElectrical tests on PCB insulation materials and investigation of influence of solder fillets geometry on partial discharge
, Firenze, Italy Electrical tests on PCB insulation materials and investigation of influence of solder fillets geometry on partial discharge A. Bulletti, L. Capineri B. Dunn ESTEC Material and Process
More informationFlash Memories. João Pela (52270), João Santos (55295) December 22, 2008 IST
Flash Memories João Pela (52270), João Santos (55295) IST December 22, 2008 João Pela (52270), João Santos (55295) (IST) Flash Memories December 22, 2008 1 / 41 Layout 1 Introduction 2 How they work 3
More informationSilicon Sensors for CMS Tracker at High-Luminosity Environment - Challenges in particle detection -
timo.peltola@helsinki.fi Finnish Society for Natural Philosophy, Helsinki, 17 February 2015 Silicon Sensors for CMS Tracker at High-Luminosity Environment - Challenges in particle detection - Timo Peltola
More informationGrad Student Presentation Topics PHGN/CHEN/MLGN 435/535: Interdisciplinary Silicon Processing Laboratory
Grad Student Presentation Topics 1. Baranowski, Lauryn L. AFM nano-oxidation lithography 2. Braid, Jennifer L. Extreme UV lithography 3. Garlick, Jonathan P. 4. Lochner, Robert E. 5. Martinez, Aaron D.
More informationElectronic Circuits Workshop Snap Circuits
Electronic Circuits Workshop Snap Circuits LEARNING GOALS: After the completion of this workshop, students will understand: 1. The basic components of an electronic circuit 2. How these components work
More informationTadahiro Yasuda. Introduction. Overview of Criterion D200. Feature Article
F e a t u r e A r t i c l e Feature Article Development of a High Accuracy, Fast Response Mass Flow Module Utilizing Pressure Measurement with a Laminar Flow Element (Resistive Element) Criterion D200
More informationNanocomputer & Architecture
Nanocomputer & Architecture Yingjie Wei Western Michigan University Department of Computer Science CS 603 - Dr. Elise dedonckor Febrary 4 th, 2004 Nanocomputer Architecture Contents Overview of Nanotechnology
More informationOur Embedded Dream of the Invisible Future
Our Embedded Dream of the Invisible Future Since the invention of semiconductor chips, the evolution of mankind s culture, society and lifestyle has accelerated at a pace never before experienced. Information
More informationPLAS: Analog memory ASIC Conceptual design & development status
PLAS: Analog memory ASIC Conceptual design & development status Ramón J. Aliaga Instituto de Física Corpuscular (IFIC) Consejo Superior de Investigaciones Científicas (CSIC) Universidad de Valencia Vicente
More informationCONCEPT OF DETERMINISTIC ION IMPLANTATION AT THE NANOSCALE
CONCEPT OF DETERMINISTIC ION IMPLANTATION AT THE NANOSCALE Daniel Spemann Jan Meijer 1, Jürgen W. Gerlach, Paul Räcke 1, Susann Liedtke, Stephan Rauschenbach 2, Bernd Rauschenbach 1 University of Leipzig,
More informationSputtered AlN Thin Films on Si and Electrodes for MEMS Resonators: Relationship Between Surface Quality Microstructure and Film Properties
Sputtered AlN Thin Films on and Electrodes for MEMS Resonators: Relationship Between Surface Quality Microstructure and Film Properties S. Mishin, D. R. Marx and B. Sylvia, Advanced Modular Sputtering,
More informationBio@IT Lisboa, July 2, 2012. Bioelectronics. Luís Alcácer. 2005, it - instituto de telecomunicações. Todos os direitos reservados.
Lisboa, July 2, 2012 Luís Alcácer 2005, it - instituto de telecomunicações. Todos os direitos reservados. Outline Organic Organic Nanoelectronics Molecular Electronics 2 July 2, 2012 Lisboa Sensu lato
More informationIn semiconductor applications, the required mass flows
Model-Based Multi-GasMulti-Range Mass Flow Controllers With Single Gas Calibration and Tuning JOOST LÖTTERS A model has been developed that accurately predicts the behavior of the flow sensor combined
More informationEMC / EMI issues for DSM: new challenges
EMC / EMI issues for DSM: new challenges A. Boyer, S. Ben Dhia, A. C. Ndoye INSA Toulouse Université de Toulouse / LATTIS, France www.ic-emc.org Long Term Reliability in DSM, 3rd October, 2008 www.ic-emc.org
More informationSupercapacitors. Advantages Power density Recycle ability Environmentally friendly Safe Light weight
Supercapacitors Supercapacitors also called ultracapacitors and electric double layer capacitors (EDLC) are capacitors with capacitance values greater than any other capacitor type available today. Capacitance
More informationCoating Thickness and Composition Analysis by Micro-EDXRF
Application Note: XRF Coating Thickness and Composition Analysis by Micro-EDXRF www.edax.com Coating Thickness and Composition Analysis by Micro-EDXRF Introduction: The use of coatings in the modern manufacturing
More informationWhy silicon MEMS? MEMS@KTH. Silicon is a strong material... Photolithography. Micromachining. Dicing and packaging
Why silicon MEMS? MEMS@KTH Small Identical Large volumes (low cost per unit) School of Electrical Engineering Royal Institute of Technology Silicon is a strong material... Photolithography 10 µm thick
More informationAplicaciones de la nanolitografía de oxidación por AFM
ForceTool Aplicaciones de la nanolitografía de oxidación por AFM (AFM oxidation nanolithography or Local oxidation nanolithography) Templates for the growth of molecular arquitectures Transistors Sensors
More informationChapter 1 Introduction to The Semiconductor Industry 2005 VLSI TECH. 1
Chapter 1 Introduction to The Semiconductor Industry 1 The Semiconductor Industry INFRASTRUCTURE Industry Standards (SIA, SEMI, NIST, etc.) Production Tools Utilities Materials & Chemicals Metrology Tools
More informationEffect of Self-Heat Circulation on VOCs Decomposition in Regenerative Thermal Oxidizer
Effect of Self- Circulation on VOCs Decomposition in Regenerative Thermal Oxidizer Shinsuke Iijima 1, Katsuya Nakayama 1, Koichi Ushiroebisu 1 Mitsuhiro Kubota 2 and Hitoki Matsuda 2 1. Engineering Division,
More informationSLC vs MLC: Which is best for high-reliability apps?
SLC vs MLC: Which is best for high-reliability apps? Here's an examination of trade-offs, with an emphasis on how they affect the reliability of storage targeted at industrial, military and avionic applications.
More informationVLSI Fabrication Process
VLSI Fabrication Process Om prakash 5 th sem ASCT, Bhopal omprakashsony@gmail.com Manisha Kumari 5 th sem ASCT, Bhopal Manisha2686@gmail.com Abstract VLSI stands for "Very Large Scale Integration". This
More informationSLC vs MLC: Proper Flash Selection for SSDs in Industrial, Military and Avionic Applications. A TCS Space & Component Technology White Paper
SLC vs MLC: Proper Flash Selection for SSDs in Industrial, Military and Avionic Applications A TCS Space & Component Technology White Paper Introduction As with most storage technologies, NAND Flash vendors
More informationSheet Resistance = R (L/W) = R N ------------------ L
Sheet Resistance Rewrite the resistance equation to separate (L / W), the length-to-width ratio... which is the number of squares N from R, the sheet resistance = (σ n t) - R L = -----------------------
More information