PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
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1 BT6 series D GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT6 D 6D bidirectional switching and phase V DRM Repetitive peak offstate voltages 6 V control applications. These devices I T(RMS) RMS onstate current A are intended to be interfaced directly I TSM Nonrepetitive peak onstate current A to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING TOAB PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal tab T T gate tab main terminal G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 6 V DRM Repetitive peak offstate voltages 6 V I T(RMS) RMS onstate current full sine wave; T mb 7 C A I TSM Nonrepetitive peak full sine wave; T j = C prior to onstate current surge t = ms A t = 6.7 ms 7 A I t I t for fusing t = ms. A s di T /dt Repetitive rate of rise of onstate current after I TM = 6 A; I G =. A; di G /dt =. A/µs triggering T+ G+ T+ G A/µs A/µs T G A/µs T G+ A/µs I GM Peak gate current A V GM Peak gate voltage V P GM Peak gate power W P G(AV) Average gate power over any ms period. W T stg Storage temperature C T j Operating junction temperature C Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed A/µs. August 997 Rev.
2 BT6 series D THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th jmb Thermal resistance full cycle. K/W junction to mounting base half cycle.7 K/W R th ja Thermal resistance in free air 6 K/W junction to ambient STATIC CHARACTERISTICS T j = C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = V; I T =. A T+ G+. T+ G T G.. T G+. I L Latching current V D = V; I GT =. A T+ G+.6 T+ G. T G T G+.. I H Holding current V D = V; I GT =. A. V T Onstate voltage I T = A..7 V V GT Gate trigger voltage V D = V; I T =. A.7. V V D = V; I T =. A; T j = C.. V I D Offstate leakage current V D = V DRM() ; T j = C.. DYNAMIC CHARACTERISTICS T j = C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = C; V/µs offstate voltage exponential waveform; R GK = kω t gt Gate controlled turnon I TM = 6 A; V D = V DRM() ; I G =. A; µs time di G /dt = A/µs August 997 Rev.
3 BT6 series D Ptot / W 8 BT6 Tmb() / C IT(RMS) / A BT6 7 6 = C 9 IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle. Tmb / C Fig.. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb. ITSM / A BT6 IT(RMS) / A BT6 IT ITSM T time Tj initial = C 8 di /dt limit T T G+ quadrant 6 us us ms ms ms T / s Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = Hz; T mb 7 C. ITSM / A BT6 IT T ITSM time.6. VGT(Tj) VGT( C) BT6 Tj initial = C..8.6 Number of cycles at Hz Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = Hz.. Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT ( C), versus junction temperature T j. August 997 Rev.
4 BT6 series D. IGT(Tj) IGT( C) BT6D T+ G+ T+ G T G T G+ IT / A Tj = C Tj = C Vo =.7 V Rs =.9 ohms 8 BT6 typ. 6. Fig.7. Normalised gate trigger current I GT (T j )/ I GT ( C), versus junction temperature T j.... VT / V Fig.. Typical and imum onstate characteristic. IL(Tj) IL( C) TRIAC Zth jmb (K/W) BT6 unidirectional. bidirectional.. P D t p. Fig.8. Normalised latching current I L (T j )/ I L ( C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jmb, versus pulse width t p. t IH(Tj) IH(C) TRIAC dvd/dt (V/us)... Fig.9. Normalised holding current I H (T j )/ I H ( C), versus junction temperature T j. Fig.. Typical, critical rate of rise of offstate voltage, dv D /dt versus junction temperature T j. August 997 Rev.
5 BT6 series D MECHANICAL DATA Dimensions in mm Net Mass: g,,,7,,8,9 min,8, not tinned, (x),,,, min,9 (x),6, Notes. Refer to mounting instructions for TO envelopes.. Epoxy meets UL9 V at /8". Fig.. TOAB; pin connected to mounting base. August 997 Rev.
6 BT6 series D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August Rev.
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