40 khz Ultrasonic Receiver & PreAmplifier Board
|
|
|
- Joshua Greene
- 7 years ago
- Views:
Transcription
1 Wide Horizontal Beam Directivity Broad bandwidth Low Q Resonance Excellent Impact Resistance Low Cost Lightweight Piezoelectric Film (PVDF) Ultrasound Receivers offer unique advantages for air ranging applications. Cylindrical 40kHz PVDF receivers exhibit very wide horizontal beam directivity and broad bandwidth characteristics. These characteristics lend unique solutions in many applications such as two-dimensional positioning, digitizer, object detection, and distance measurement. Depending on the applications, resonance frequency and vertical beam directivity of the receiver can easily be customized by changing the diameter and length of the PVDF cylinder. The receiver has a very wide horizontal beam angle and it can be reduced by changing the housing design if necessary. PVDF receivers also have very low resonance Q value. Typically, PVDF receivers have a Q value of 4. This means that the rising time and the signal decay time are much faster than the conventional ceramic receivers. This characteristic is suitable for high speed data acquisition or high speed digitizer applications. Also, a preamplifier is available for easy evaluation of 40 khz receivers. FEATURES PVDF Thickness: 30 m Resonance Frequency: 40 khz Bandwidth: 10 khz Resonance Q: 4 Sensitivity Output: 1.5 mv/pa -76 db Horizontal Beam Directivity: 150 Vertical Beam Directivity: 40 Capacitance: 140 pf Storage Temperature: -20 C C Operating Temperature: +5 C APPLICATIONS Two-dimensional Position Detection Digitizer Distance Measurement Object Detection General Purpose Air Ranging Applications specifications Min Typ Max Unit Supply Voltage 5 VDC Supply Current 0.03 ADC Frequency 40 khz Gain 31 db 1 of 5
2 dimensions [14.3mm] [8.6mm] [2.6mm] [16.3mm] [10.5mm] [5.0mm] [37.3mm] [44.7mm] [42.2mm] [49.3mm] 2 of 5
3 TYPICAL FREQUENCY RESPONSE TYPICAL TIME RESPONSE TYPICAL HORIZONTAL BEAM DIRECTIVITY TYPICAL VERTICAL BEAM DIRECTIVITY 3 of 5
4 preamplifier gain Pre-amplifier has gain of 31 and a bandwidth filter to maximize the S/N ratio. The receiver can be snapped onto the pre-amplifier. circuit diagram 4 of 5
5 The information in this sheet has been carefully reviewed and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of such devices any license under the patent rights to the manufacturer. Measurement Specialties, Inc. reserves the right to make changes without further notice to any product herein. Measurement Specialties, Inc. makes no warranty, representation or guarantee regarding the suitability of its product for any particular purpose, nor does Measurement Specialties, Inc. assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters must be validated for each customer application by customer s technical experts. Measurement Specialties, Inc. does not convey any license under its patent rights nor the rights of others. ordering information Description Part # Model # 40kHz Receiver US40KR-01 Preamplifier Board US40KA-01 CANADA Durham Instruments 900 McKay Road, Unit 3 Pickering, ON L1W 3X8 Tel: Fax: sales@disensors.com The information in this sheet has been carefully reviewed and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of such devices any license under the patent rights to the manufacturer. Measurement Specialties, Inc. reserves the right to make changes without further notice to any product herein. Measurement Specialties, Inc. makes no warranty, representation or guarantee regarding the suitability of its product for any particular purpose, nor does Measurement Specialties, Inc. assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters must be validated for each customer application by customer s technical experts. Measurement Specialties, Inc. does not convey any license under its patent rights nor the rights of others. 5 of 5
PS25202 EPIC Ultra High Impedance ECG Sensor Advance Information
EPIC Ultra High Impedance ECG Sensor Advance Information Data Sheet 291498 issue 2 FEATURES Ultra high input resistance, typically 20GΩ. Dry-contact capacitive coupling. Input capacitance as low as 15pF.
2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.
Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit
2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000
2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward
LOW POWER NARROWBAND FM IF
Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
APPLICATION NOTE AP050830
APPLICATION NOTE AP050830 Selection and use of Ultrasonic Ceramic Transducers Pro-Wave Electronics Corp. E-mail: sales@pro-wave.com.tw URL: http://www.prowave.com.tw The purpose of this application note
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency
P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for both narrowband and broadband CW or pulse applications
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter
RF data receiver super-reactive ASK modulation, low cost and low consumption ideal for Microchip HCS KEELOQ decoder/encoder family. 0.
Receiver AC-RX2/CS RF data receiver super-reactive ASK modulation, low cost and low consumption ideal for Microchip HCS KEELOQ decoder/encoder family. Pin-out 38.1 3 Component Side 1 2 3 7 11 13 14 15
SC Series: MIS Chip Capacitors
DATA SHEET SC Series: MIS Chip Capacitors Applications Systems requiring DC blocking or RF bypassing Fixed capacitance tuning element in filters, oscillators, and matching networks Features Readily available
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC
4L Series AC Line Rated Ceramic Disc Capacitors Class X, 76 V AC / Class Y, 5 V AC FEATURES Complies with IEC 6384-4, 4 th edition High reliability Radial leads High capacitance up to nf Singlelayer AC
Custom Products. Magnetic Components. Vishay Dale. www.vishay.com
Magnetic Components SWITCH MODE MAGNETICS AIR CORE INDUCTORS INDUCTIVE PRODUCTS CUSTOM DESIGN AND PRODUCTION has extensive facilities for custom design and production of custom magnetics. Design applications
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
IR Receiver Module for Light Barrier Systems
Not for New Design - Alternative Available: New TSSP4038 (#82458) www.vishay.com IR Receiver Module for Light Barrier Systems TSOP4038 2 3 MECHANICAL DATA Pinning: = OUT, 2 = GND., 3 = V S 6672 FEATURES
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.
Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring
Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 00 0 Nominal case size (Ø D x L in mm) x 0 to 0 x 00 Rated capacitance range 0 μf to
2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS
2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
LM1596 LM1496 Balanced Modulator-Demodulator
LM1596 LM1496 Balanced Modulator-Demodulator General Description The LM1596 LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to the product of an input (signal)
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications ELECTRICAL SPECIFICATIONS X7R GENERAL SPECIFICATION Note Electrical characteristics at +25 C unless otherwise specified
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38
Silicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
RX-AM4SF Receiver. Pin-out. Connections
RX-AM4SF Receiver The super-heterodyne receiver RX-AM4SF can provide a RSSI output indicating the amplitude of the received signal: this output can be used to create a field-strength meter capable to indicate
DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08
DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
Aluminum Electrolytic Capacitors Power Economic Printed Wiring
Aluminum Electrolytic Capacitors Power Economic Printed Wiring 0/0 PECPW 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION high ripple current 0/0 PECPW long life 0 C Nominal case size (Ø D x L in mm) Rated
SMD Aluminum Solid Capacitors with Conductive Polymer
SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8632 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.
High Common-Mode Rejection. Differential Line Receiver SSM2141. Fax: 781/461-3113 FUNCTIONAL BLOCK DIAGRAM FEATURES. High Common-Mode Rejection
a FEATURES High Common-Mode Rejection DC: 00 db typ 60 Hz: 00 db typ 20 khz: 70 db typ 40 khz: 62 db typ Low Distortion: 0.00% typ Fast Slew Rate: 9.5 V/ s typ Wide Bandwidth: 3 MHz typ Low Cost Complements
DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS
2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15~TAR5SB50
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TARSB~TARSB Point Regulators (Low-Dropout Regulator) TARSB~TARSB The TARSBxx Series is comprised of general-purpose bipolar single-power-supply
AC and Pulse Film Foil Capacitors KP Radial Potted Type
AC and Pulse Film Foil Capacitors KP Radial Potted Type 0.5 L max. W max. Marking H max. FEATURES 5 mm lead pitch, supplied loose in box taped in ammopack or reel Material categorization: for definitions
The sensor can be operated at any frequency between DC and 1 MHz.
Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
Wideband Driver Amplifiers
The driver amplifier is a wideband, 1 khz to 4 GHz amplifier intended for use in broadband microwave and high data rate systems. The is a 3-stage high output power modulator driver amplifier that can provide
TS321 Low Power Single Operational Amplifier
SOT-25 Pin Definition: 1. Input + 2. Ground 3. Input - 4. Output 5. Vcc General Description The TS321 brings performance and economy to low power systems. With high unity gain frequency and a guaranteed
SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal
SuperTan Extended () Capacitors, Wet Tantalum Capacitors with Hermetic Seal FEATURES SuperTan Extended () represents a major breakthrough in wet tantalum capacitor Available technology. Its unique cathode
Precision, Unity-Gain Differential Amplifier AMP03
a FEATURES High CMRR: db Typ Low Nonlinearity:.% Max Low Distortion:.% Typ Wide Bandwidth: MHz Typ Fast Slew Rate: 9.5 V/ s Typ Fast Settling (.%): s Typ Low Cost APPLICATIONS Summing Amplifiers Instrumentation
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally
Single-channel common-mode filter with integrated ESD protection network
Single-channel common-mode filter with integrated ESD protection network Rev. 2 29 May 2013 Product data sheet 1. Product profile 1.1 General description 2-lines (one differential channel) common-mode
Features. Applications. Description. Blockdiagram. K-LC1a RADAR TRANSCEIVER. Datasheet
Features 24 GHz K-band miniature transceiver 180MHz sweep FM input (n.a. for K-LC1a_V2) Dual 4 patch antenna Single balanced mixer with 50MHz bandwidth Beam aperture 80 /34 15dBm EIRP output power 25x25mm
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8583 BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near
unit : mm With heat sink (see Pd Ta characteristics)
Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap
LM381 LM381A Low Noise Dual Preamplifier
LM381 LM381A Low Noise Dual Preamplifier General Description The LM381 LM381A is a dual preamplifier for the amplification of low level signals in applications requiring optimum noise performance Each
Optocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
AAV003-10E Current Sensor
Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature
Triple single-pole double-throw analog switch
Rev. 12 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a triple single-pole double-throw (SPDT) analog switch, suitable
Ambient Light Sensor
TEPT56 Ambient Light Sensor DESCRIPTION 94 839 TEPT56 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye
LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR
3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip
AAT001-10E TMR Angle Sensor
Data Sheet AAT001-10E TMR Angle Sensor Key Features Tunneling Magnetoresistance (TMR) Technology Very High Output Signal Without Amplification Wide Airgap Tolerance Very High Resistance for Extremely Low
BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS
BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,
MC14008B. 4-Bit Full Adder
4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast
8-channel analog multiplexer/demultiplexer
Rev. 12 25 March 2016 Product data sheet 1. General description The is an with three address inputs (S1 to S3), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and a common
LC898300XA. Functions Automatic adjustment to the individual resonance frequency Automatic brake function Initial drive frequency adjustment function
Ordering number : A2053 CMOS LSI Linear Vibrator Driver IC http://onsemi.com Overview is a Linear Vibrator Driver IC for a haptics and a vibrator installed in mobile equipments. The best feature is it
Preliminary Data Sheet
Surface Mount Ceramic Chip Antennas for 433 MHz The VJ5301M433 series are small form-factor, high-performance chip-antennas optimized for industrial, automotive, and medical applications. chip antenna
Reflective Optical Sensor with Transistor Output
TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 Peak operating distance: 2.5
FM/AM RADIO IC CD2003GP/GB. 1 Overview. 2 Block Diagram And Pin Descriptions
CD2003GP/GB FM/AM RADIO IC 1 Overview The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifier IC, a suitable FM/AM radio can be constituted. Its
Project Documentation EKTSDG-010000 Target Simulator Doppler Generator
Project Documentation EKTSDG-010000 Target Simulator Doppler Generator Project Number: SMS Project Number: Project Title: Handheld Radar Target Simulator Doppler Generator Keyword(s): Electronic Radar
74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter
Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to
Power Resistor for Mounting onto a Heatsink Thick Film Technology
DIMENSIONS in millimeters Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES 800 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series Non inductive Easy
BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel
LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable
VT-802 Temperature Compensated Crystal Oscillator
T-802 Temperature Compensated Crystal Oscillator T-802 Description ectron s T-802 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, CMOS output, analog temperature compensated oscillator,
Description. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
Optocoupler, Phototransistor Output, with Base Connection
Optocoupler, Phototransistor Output, with Base Connection FEATURES i794-4 DESCRIPTION This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families
Preamplifier Circuit for IR Remote Control
Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer
Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
CLA Series: Silicon Limiter Diode Bondable Chips
DATA SHEET CLA Series: Silicon Limiter Diode Bondable Chips Applications LNA receiver protection Commercial and defense radar Features Established Skyworks limiter diode process High-power, mid-range,
DVT913 TV CHANNEL CONVERTER
Broadband Cable Networks 1(5) DVT913 TV CHANNEL CONVERTER General DVT913 is a TV Channel Converter for the DVX tend product family. It consists of an input down converter from to, a high selectivity part
Laser diffuse reflection light scanner with background suppression. Dimensioned drawing
Specifications and description HRTL 3B Laser diffuse reflection light scanner with background suppression Dimensioned drawing We reserve the right to make changes DS_HRTL3B_en.fm en 01-2010/12 50114049
NE592 Video Amplifier
Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external
NUD4011. Low Current LED Driver
NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive
Femtofarad bidirectional ESD protection diode
Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
US-SPI New generation of High performances Ultrasonic device
US-SPI New generation of High performances Ultrasonic device Lecoeur Electronique - 19, Rue de Courtenay - 45220 CHUELLES - Tel. : +33 ( 0)2 38 94 28 30 - Fax : +33 (0)2 38 94 29 67 US-SPI Ultrasound device
NPN wideband transistor in a SOT89 plastic package.
SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate
Rev. 6 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise
Archimedes Palimpsest Metadata Standard XRF Extensions DRAFT
Archimedes Palimpsest Metadata Standard XRF Extensions DRAFT [These metadata extensions to the Archimedes Palimpsest Metadata Standard 1.0X are currently under review. Comments may be provided to Bob Morton
INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent
LM78XX Series Voltage Regulators
LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range
Optocoupler, Phototransistor Output, AC Input
Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have
SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)
MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)
Vehicle Brake System Monitoring 2-wire, 4-20 ma option; Intrinsic Safety Approval to E Exia IIC T4 (Tamb=60 C) BASEEFA, CENELEC EN50-020
Field proven rugged construction High overpressure capability High reliability for demanding environments Application specific customization Excellent media compatibility Shock and vibration resistant