AAV003-10E Current Sensor
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1 Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature TDFN Package Description The AAV003-10E is a high linearity, extremely low hysteresis GMR current sensor with an on-chip current strap. A GMR bridge sensor element close to the current strap senses the magnetic field created by the current. The GMR sensor element uses a unique, bipolar output, low hysteresis GMR material for excellent accuracy. The four terminals of the bridge sensor are available externally. The output terminals of the bridge provide a bipolar voltage signal proportional to the current through the strap. V+ (Pin 1) GMR Bridge V- Out+ Out- I+ AAV003-10E I- AAV003-10E Functional Diagram SB February 2012
2 Operation A representative transfer curve is shown below: AAV003 10E Bridge Output vs Input C urrent 5V Supply Voltage, 25C Bridge Output (V) Input Current (A) Operating Specifications: Parameter Test Conditions Min. Typ. Max. Units Nominal Bridge Resistance 25 C Ohms Sensitivity Operating; 5 V Supply, 25 C mv/v-ma Frequency Response 100 KHz Linear Range of Current Measurement Operating; Full Voltage and Temperature Range ma Output Linearity Over Linear Current Range; Full Oper. Temperature Range 99% Bridge Electrical Offset 25 C 4 +4 mv/v Offset Drift over Full Temperature Range Zero Current mv/v Bridge Supply Voltage 24 Volts Isolation Voltage See Note VRMS On-Chip Current Strap Resistance 25 C Ohms On-Chip Current Strap Resistance Temperature Coefficient +0.6 %/ C Temperature Range of Operation Operating C Bridge Resistance Temperature Coeff. Operating +0.1 %/ C Bridge TCOV 2 Operating 0.21 %/ C 1. For isolation measurement, the sensor is considered a two terminal device: I + and I - pins (pins 3 and 4) are shorted, and bridge pins (pins 1, 2, 5, and 6) are shorted. 2. TCOV is the percent change in output signal over temperature, with a constant voltage source powering the part. Absolute Maximum Ratings: Parameter Min. Typ. Max. Units Absolute Maximum Current ma Bridge Supply Voltage 30 Volts Storage Temperature C Ambient Magnetic Field Unlimited Note: Exceeding Absolute Maximum Ratings may cause permanent damage.
3 External Magnetic Fields and Hysteresis Effects The AAV003-10E sensor elements are shielded to make them insensitive to external magnetic fields, however, shielding is not 100% effective, so external fields applied to the sensor should be avoided for the most repeatable, accurate operation. When exposed to magnetic fields over 50 Oe (5 mt), the characteristic of the sensor can be disturbed, causing a hysteresis effect that will produce a non-linear response. A magnetic field of 50 Oe is a large field that should not be encountered during normal operation. However, in case the sensor is exposed to such a field, a degauss pulse train can be applied to the sensor to restore the original response. The sensor cannot be permanently damaged by any magnetic field, no matter how large and it can always be restored after exposure to a large field with a degauss signal. This same effect can be observed when a large constant current (>200 ma) is applied to the on-chip current strap, or a smaller constant current (>100 ma) at high temperatures (>85 C). Again in these cases, correct operation of the sensor is restored with a degauss signal. The degauss signal should consist of at least four current pulses of alternating polarity, with a pulse width of at least 50 µs and an initial current pulse of 600 ma: Typical Degauss Pulse 900 Current (ma) Minimum Duration at Peak 50 μs Time (μs) Temperature Characteristics Typical output over temperature is shown in the graph below: AAV003 10E Output over Temperature Typical Output Signal (V) On Chip Strap Current (A) C 85 C 125 C
4 Pinout The AAV003-10E pinout is as follows: Pin Terminal Description 1 V + Supply Voltage 2 Out + Positive Differential Bridge Output 3 I + Current Terminal 1 4 I Current Terminal 2 5 Out Negative Differential Bridge Output 6 V Ground 1. Pins are numbered counterclockwise around the package. 2. Current entering the chip via terminal I + and leaving the chip via terminal I produces a positive bridge output. Package Drawing TDFN6 2.5 mm x 2.5 mm Dimensions in mm. TDFN6 package has thermal power dissipation of 320 C/Watt in free air. Attaching the package to a circuit board improves thermal performance, especially if the center pad is also soldered to the board. The center pad may be left floating or connected to ground. NVE Corporation All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. SB February 2012
5 Datasheet Limitations The information and data provided in datasheets shall define the specification of the product as agreed between NVE and its customer, unless NVE and customer have explicitly agreed otherwise in writing. All specifications are based on NVE test protocols. In no event however, shall an agreement be valid in which the NVE product is deemed to offer functions and qualities beyond those described in the datasheet. Limited Warranty and Liability Information in this document is believed to be accurate and reliable. However, NVE does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NVE be liable for any indirect, incidental, punitive, special or consequential damages (including, without limitation, lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Right to Make Changes NVE reserves the right to make changes to information published in this document including, without limitation, specifications and product descriptions at any time and without notice. This document supersedes and replaces all information supplied prior to its publication. Use in Life-Critical or Safety-Critical Applications Unless NVE and a customer explicitly agree otherwise in writing, NVE products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical devices or equipment. NVE accepts no liability for inclusion or use of NVE products in such applications and such inclusion or use is at the customer s own risk. Should the customer use NVE products for such application whether authorized by NVE or not, the customer shall indemnify and hold NVE harmless against all claims and damages. Applications Applications described in this datasheet are illustrative only. NVE makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NVE products, and NVE accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NVE product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customers. Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NVE does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customers. The customer is responsible for all necessary testing for the customer s applications and products using NVE products in order to avoid a default of the applications and the products or of the application or use by customer s third party customers. NVE accepts no liability in this respect. Limiting Values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the recommended operating conditions of the datasheet is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and Conditions of Sale In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NVE hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NVE products by customer. No Offer to Sell or License Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export Control This document as well as the items described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Automotive Qualified Products Unless the datasheet expressly states that a specific NVE product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NVE accepts no liability for inclusion or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NVE s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NVE s specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NVE for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NVE s standard warranty and NVE s product specifications.
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DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 2003 Apr 01 2004 Mar 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ±2% and approx. ±5% Working voltage range: nominal 2.4
EMC6D103S. Fan Control Device with High Frequency PWM Support and Hardware Monitoring Features PRODUCT FEATURES ORDER NUMBERS: Data Brief
EMC6D103S Fan Control Device with High Frequency PWM Support and Hardware Monitoring Features PRODUCT FEATURES Data Brief 3.3 Volt Operation (5 Volt Tolerant Input Buffers) SMBus 2.0 Compliant Interface
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
High-speed USB 2.0 switch with enable
Rev. 4 9 June 03 Product data sheet. General description The is a high-bandwidth switch designed for the switching of high-speed UB.0 signals in handset and consumer applications. These applications could
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
CLA4607-085LF: Surface Mount Limiter Diode
DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold
Bus buffer/line driver; 3-state
Rev. 11 2 July 2012 Product data sheet 1. General description The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). HIGH-level
N-channel TrenchMOS logic level FET
SOT23 Rev. 2 7 November 2 Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Supersedes data of 2004 Mar 26 2004 Jun 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ± 2 % and ± 5 % Working voltage range: nominal 2.4
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
AN1991. Audio decibel level detector with meter driver
Rev. 2.1 20 March 2015 Application note Document information Info Keywords Abstract Content SA604A, LM358, RSSI, cellular radio The SA604A can provide a logarithmic response proportional to the input signal
SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)
MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)