FJP13009 High Voltage Fast-Switching NPN Power Transistor

Transcription

1 FJP3009 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T C = 25 C unless otherwise noted (notes_) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. March 2007 Symbol Parameter alue Units CBO Collector-Base oltage 700 CEO Collector-Emitter oltage 400 EBO Emitter-Base oltage 9 Collector Current (DC) 2 A P Collector Current (Pulse) 24 A I B Base Current 6 A P C Collector Dissipation (T C = 25 C) W T J Junction Temperature 50 C T STG Storage Temperature Range -65 ~ 50 C FJP3009 High oltage Fast-Switching NPN Power Transistor NOTES_: ) These ratings are based on a maximum junction temperature of 50 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Package Marking and Ordering Information Device Item (notes_2) Device Marking Package Packing Method Qty(pcs) FJP3009 J3009 TO-220 Bulk,200 FJP3009H2TU J30092 TO-220 TUBE,000 FJP3009TU J3009 TO-220 TUBE,000 Notes_2 : ) The Affix -H2 means the hfe classification. 2) The Suffix -TU means the Tube packing method, which can be on fairchildsemi website at Fairchild Semiconductor Corporation FJP3009 Rev. B

2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units CEO (sus) Collector-Emitter Sustaining oltage = 0mA, I B = I EBO Emitter Cut-off Current EB = 9, = 0 ma h FE * DC Current Gain CE = 5, = 5A (h FE ) CE = 5, = 8A CE (sat) * Collector-Emitter Saturation oltage = 5A, I B = A = 8A, I B =.6A = 2A, I B = 3A BE (sat) * Base-Emitter Saturation oltage = 5A, I B = A = 8A, I B =.6A C ob Output Capacitance CB = 0, f = 0.MHz 80 pf f T Current Gain Bandwidth Product CE = 0, = 0.5A 4 MHz t ON Turn On Time CC = 25, = 8A. µs t STG Storage Time I B = - I B2 =.6A, R L = 5,6Ω 3 µs t F Fall Time 0.7 µs * Pulse Test: PW 300µs, Duty Cycle 2% h FE Classification Classification H H2 h FE 8 ~ 7 5 ~ FJP3009 High oltage Fast-Switching NPN Power Transistor FJP3009 Rev. B 2

3 Typical Performance Characteristics h FE, DC CURRENT GAIN C ob [pf], CAPACITANCE Figure. DC current Gain CE = 5 BE (sat), CE (sat)[], SATURATION OLTAGE t R, t D [ns], TURN ON TIME 0 0. BE (sat) CE (sat) = 3 I B Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 00 0 t R t D, BE (off)=5 CC =25 =5I B FJP3009 High oltage Fast-Switching NPN Power Transistor CB [], COLLECTOR BASE OLTAGE Figure 3. Collector Output Capacitance Figure 4. Turn On Time t STG, t F [ns], TURN OFF TIME 00 0 t STG CC =25 =5I B 0 0. DC 0µs µs ms t F CE [], COLLECTOR-EMITTER OLTAGE Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area FJP3009 Rev. B 3

4 Typical Performance Characteristics (Continued) 0 0. cc=50, I B =A, I B2 = -A L = mh CE [], COLLECTOR-EMITTER OLTAGE Figure 7. Reverse Bias Safe Operating Area P C [W], POWER DISSIPATION T C [ o C], CASE TEMPERATURE Figure 8. Power Derating FJP3009 High oltage Fast-Switching NPN Power Transistor FJP3009 Rev. B 4

5 Mechanical Dimensions (.70) 9.20 ± ± ±0.0 (.46) (.00).27 ± ±0.20 (8.70) ø3.60 ±0.0 TO-220 (45 ) (3.70) (3.00).52 ± ± ± ± MAX ± FJP3009 High oltage Fast-Switching NPN Power Transistor 2.54TYP [2.54 ±0.20] 0.80 ± TYP [2.54 ±0.20] ± ±0.20 Dimensions in Millimeters FJP3009 Rev. B 5

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