Obsolete Product(s) - Obsolete Product(s)

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1 2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. ABSOLUTE MAXIMUM RATINGS HIGH SPEED SITCHES PRELIMINARY DATA INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CBO Collector-Base oltage (IE = 0) 75 CEO Collector-Emitter oltage (IB = 0) 40 EBO Emitter-Base oltage (I C = 0) 6 I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at TC 25 o C for 2N2219A for 2N2222A TO-18 T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature TO-39 o C o C February /7

2 THERMAL DATA TO-39 TO-18 R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o C/ o C/ ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX IBEX I EBO (BR)CBO (BR)CEO (BR)EBO CE(sat) BE(sat) Collector Cut-off Current (I E = 0) Collector Cut-off Current ( BE = -3) Base Cut-off Current ( BE = -3) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown oltage (I E = 0) Collector-Emitter Breakdown oltage (I B = 0) Emitter-Base Breakdown oltage (IC = 0) Collector-Emitter Saturation oltage CB = 60 CB = 60 T j = 150 o C CE = na CE = na EB = 3 10 na I C = 10 µa 75 I C = 10 ma 40 I E = 10 µa 6 I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Base-Emitter IC = 150 ma IB = 15 ma Saturation oltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma CE = 10 I C = 1 ma CE = 10 I C = 150 ma CE = 10 IC = 500 ma CE = 10 I C = 150 ma CE = 1 T amb = -55 o C h fe Small Signal Current I C = 1 ma CE = 10 f = 1KHz Gain f = 1KHz f T Transition Frequency I C = 20 ma CE = MHz f = 100 MHz C EBO Emitter-Base I C = 0 EB = 0.5 f = 100KHz 25 pf Capacitance C CBO Collector-Base I E = 0 CB = 10 f = 100 KHz 8 pf Capacitance R e(hie) Real Part of Input I C = 20 ma CE = Ω Impedance f = 300MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1 % na µa 2/7

3 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 ma CE = 10 4 db f = 1KHz R g = 1KΩ hie Input Impedance IC = 1 ma CE = 10 h re Reverse oltage Ratio I C = 1 ma CE = 10 h oe Output Admittance I C = 1 ma CE = 10 t d Delay Time CC = 30 I C = 150 ma I B1 = 15 ma BB = -0.5 tr Rise Time CC = 30 IC = 150 ma I B1 = 15 ma BB = -0.5 ts Storage Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma tf Fall Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma r bb C b c Feedback Time I C = 20 ma CE = 20 Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1 % See test circuit kω kω µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/7

4 Test Circuit fot t d, t r. Test Circuit fot t d, t r. PULSE GENERATOR : tr 20 ns P 200 ns Z IN = 50 Ω TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 KΩ C IN 12 pf PULSE GENERATOR : TO OSCILLOSCOPE : P 10 µs t r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC 5.0 ns CIN 12 pf 4/7

5 TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o 45 o I G H D A F E L C B /7

6 TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L I G 45 o (typ.) H D A F E L B P008B 6/7

7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 7/7