Obsolete Product(s) - Obsolete Product(s)

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Obsolete Product(s) - Obsolete Product(s)"

Transcription

1 2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. ABSOLUTE MAXIMUM RATINGS HIGH SPEED SITCHES PRELIMINARY DATA INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CBO Collector-Base oltage (IE = 0) 75 CEO Collector-Emitter oltage (IB = 0) 40 EBO Emitter-Base oltage (I C = 0) 6 I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at TC 25 o C for 2N2219A for 2N2222A TO-18 T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature TO-39 o C o C February /7

2 THERMAL DATA TO-39 TO-18 R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o C/ o C/ ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX IBEX I EBO (BR)CBO (BR)CEO (BR)EBO CE(sat) BE(sat) Collector Cut-off Current (I E = 0) Collector Cut-off Current ( BE = -3) Base Cut-off Current ( BE = -3) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown oltage (I E = 0) Collector-Emitter Breakdown oltage (I B = 0) Emitter-Base Breakdown oltage (IC = 0) Collector-Emitter Saturation oltage CB = 60 CB = 60 T j = 150 o C CE = na CE = na EB = 3 10 na I C = 10 µa 75 I C = 10 ma 40 I E = 10 µa 6 I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Base-Emitter IC = 150 ma IB = 15 ma Saturation oltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma CE = 10 I C = 1 ma CE = 10 I C = 150 ma CE = 10 IC = 500 ma CE = 10 I C = 150 ma CE = 1 T amb = -55 o C h fe Small Signal Current I C = 1 ma CE = 10 f = 1KHz Gain f = 1KHz f T Transition Frequency I C = 20 ma CE = MHz f = 100 MHz C EBO Emitter-Base I C = 0 EB = 0.5 f = 100KHz 25 pf Capacitance C CBO Collector-Base I E = 0 CB = 10 f = 100 KHz 8 pf Capacitance R e(hie) Real Part of Input I C = 20 ma CE = Ω Impedance f = 300MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1 % na µa 2/7

3 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 ma CE = 10 4 db f = 1KHz R g = 1KΩ hie Input Impedance IC = 1 ma CE = 10 h re Reverse oltage Ratio I C = 1 ma CE = 10 h oe Output Admittance I C = 1 ma CE = 10 t d Delay Time CC = 30 I C = 150 ma I B1 = 15 ma BB = -0.5 tr Rise Time CC = 30 IC = 150 ma I B1 = 15 ma BB = -0.5 ts Storage Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma tf Fall Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma r bb C b c Feedback Time I C = 20 ma CE = 20 Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1 % See test circuit kω kω µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/7

4 Test Circuit fot t d, t r. Test Circuit fot t d, t r. PULSE GENERATOR : tr 20 ns P 200 ns Z IN = 50 Ω TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 KΩ C IN 12 pf PULSE GENERATOR : TO OSCILLOSCOPE : P 10 µs t r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC 5.0 ns CIN 12 pf 4/7

5 TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o 45 o I G H D A F E L C B /7

6 TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L I G 45 o (typ.) H D A F E L B P008B 6/7

7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 7/7

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BUL312FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ERY HIGH SWITCHING SPEED FULLY CHARACTERIZED

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage V CEO = 230 V Typical f T = 30 MHz Application Audio power amplifier Description This device is a NPN

More information

2SD882. NPN medium power transistor. Features. Applications. Description. High current Low saturation voltage Complement to 2SB772

2SD882. NPN medium power transistor. Features. Applications. Description. High current Low saturation voltage Complement to 2SB772 NPN medium power transistor Features High current Low saturation Complement to 2SB772 Applications Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Description The device

More information

BUX48/48A BUV48A/V48AFI

BUX48/48A BUV48A/V48AFI BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE

More information

BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400

More information

BD135 - BD136 BD139 - BD140

BD135 - BD136 BD139 - BD140 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted

More information

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear

More information

STP03D kv NPN Darlington transistor. Features. Application. Description (2, TAB) B (1) E (3)

STP03D kv NPN Darlington transistor. Features. Application. Description (2, TAB) B (1) E (3) 2 kv NPN Darlington transistor Features Extra high voltage capability High gain characteristic TAB Application Active start-up network in 3 phase S.M.P.S. (see application note AN2454) Description The

More information

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with

More information

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

More information

TIP31C. Power transistors. General features. Applications. Description. Internal schematic diagram. Order codes

TIP31C. Power transistors. General features. Applications. Description. Internal schematic diagram. Order codes Power transistors General features New enhanced series High switching speed h FE improved linearity h FE Grouping Applications Linear and switching industrial application TO-220 1 2 3 Description The TIP31C

More information

ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description

ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

More information

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. 2N3055, MJ2955 Complementary power transistors Features Datasheet - production

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

TIP41C TIP42C. Complementary power transistors. Features. Applications. Description

TIP41C TIP42C. Complementary power transistors. Features. Applications. Description TIP41C TIP42C Complementary power transistors Features Complementary PNP-NPN devices New enhanced series High switching speed h FE grouping h FE improved linearity Applications General purpose circuits

More information

PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER

PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER REVERSE LEAKAGE CURRENT LESS THAN 10 µa THREE TERMINAL FIXED VERSION (13.7V) OUTPUT CURRENT IN EXCESS OF 1.5A AVAILABLE IN ± 1% (AC) SELECTION AT 25 C TYPICAL

More information

BC107/ BC108/ BC109 Low Power Bipolar Transistors

BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension

More information

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03. DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS

More information

ULN2001A-ULN2002A ULN2003A-ULN2004A

ULN2001A-ULN2002A ULN2003A-ULN2004A ULN2001A-ULN2002A ULN200A-ULN2004A SEVEN DARLINGTON ARRAYS SEVEN DARLINGTONS PER PACKAGE OUTPUT CURRENT ma PER DRIVER (600mA PEAK) OUTPUT VOLTAGE 50V INTEGRATED SUPPRESSION DIODES FOR INDUCTIVE LOADS OUTPUTS

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

HCF4001B QUAD 2-INPUT NOR GATE

HCF4001B QUAD 2-INPUT NOR GATE QUAD 2-INPUT NOR GATE PROPAGATION DELAY TIME: t PD = 50ns (TYP.) at V DD = 10V C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION

TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,

More information

HCF4070B QUAD EXCLUSIVE OR GATE

HCF4070B QUAD EXCLUSIVE OR GATE QUAD EXCLUSIE OR GATE MEDIUM-SPEED OPERATION t PHL = t PLH = 70ns (Typ.) at CL = 50 pf and DD = 10 QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA

More information

HCF4081B QUAD 2 INPUT AND GATE

HCF4081B QUAD 2 INPUT AND GATE QUAD 2 INPUT AND GATE MEDIUM SPEED OPERATION : t PD = 60ns (Typ.) at 10 QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA (MAX) AT DD = 18 T A = 25

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

HCF4010B HEX BUFFER/CONVERTER (NON INVERTING)

HCF4010B HEX BUFFER/CONVERTER (NON INVERTING) HEX BUFFER/CONVERTER (NON INVERTING) PROPAGATION DELAY TIME: t PD = 50ns (Typ.) at V DD = 10V C L = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT

More information

ADJUSTABLE VOLTAGE AND CURRENT REGULATOR

ADJUSTABLE VOLTAGE AND CURRENT REGULATOR L200 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR ADJUSTABLE OUTPUT CURRENT UP TO 2 A (GUARANTEED UP TO Tj = 150 C) ADJUSTABLE OUTPUT VOLTAGE DOWN TO 2.85 V INPUT OVERVOLTAGE PROTECTION (UP TO 60 V, 10 ms)

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE PROTECTION

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS MARKING DIAGRAM , General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Rating Symbol Value Unit V CEO 3 4 2 BASE 1 EMITTER Collector-Base

More information

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military

More information

. LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION

. LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION TDA2822M DUAL LOW-VOLTAGE POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 1.8V. LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822M is a monolithic integrated

More information

HCF40181B 4-BIT ARITHMETIC LOGIC UNIT

HCF40181B 4-BIT ARITHMETIC LOGIC UNIT 4-BIT ARITHMETIC LOGIC UNIT FULL LOOK-AHEAD CARRY FOR SPEED OPERATIONS ON LONG WORDS GENERATES 16 LOGIC FUNCTIONS OF TWO BOOLEAN VARIABLES GENERATES 16 ARITHMETIC FUNCTIONS OF TWO 4-BIT BINARY WORDS A

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

L293D L293DD PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES. 600mA OUTPUT CURRENT CAPABILITY PER CHANNEL 1.2A PEAK OUTPUT CURRENT (non repetitive)

L293D L293DD PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES. 600mA OUTPUT CURRENT CAPABILITY PER CHANNEL 1.2A PEAK OUTPUT CURRENT (non repetitive) 293D 293DD PUS-PU FOUR CANNE DRIVER WIT DIODES 600mA OUTPUT CURRENT CAPABIITY PER CANNE 1.2A PEAK OUTPUT CURRENT (non repetitive) PER CANNE ENABE FACIITY OVERTEMPERATURE PROTECTION OGICA "0" INPUT VOTAGE

More information

TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors

TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage V CEO (sus) = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146

More information

HCF4028B BCD TO DECIMAL DECODER

HCF4028B BCD TO DECIMAL DECODER BCD TO DECIMAL DECODER BCD TO DECIMAL DECODING OR BINARY TO OCTAL DECODING HIGH DECODED OUTPUT DRIVE CAPABILITY "POSITIVE LOGIC" INPUTS AND OUTPUTS: DECODED OUTPUTS GO HIGH ON SELECTION MEDIUM SPEED OPERATION

More information

ULN2801A, ULN2802A, ULN2803A, ULN2804A

ULN2801A, ULN2802A, ULN2803A, ULN2804A ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral

More information

TIP31, TIP32 High Power Bipolar Transistor

TIP31, TIP32 High Power Bipolar Transistor Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

VNP5N07 OMNIFET: FULLY AUTOPROTECTED POWER MOSFET "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM

More information

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)

More information

L4940 series VERY LOW DROP 1.5 A REGULATORS

L4940 series VERY LOW DROP 1.5 A REGULATORS L4940 series VERY LOW DROP 1.5 A REGULATORS PRECISE 5 V, 8.5 V, 10 V, 12 V OUTPUTS LOW DROPOUT VOLTAGE (500 typ at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

HCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION

HCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION QUIESCENT CURRENT SPECIF. UP TO 20V OPERATION OF LIQUID CRYSTALS WITH CMOS CIRCUITS PROVIDES ULTRA LOW POWER DISPLAY. EQUIVALENT AC OUTPUT DRIVE

More information

BUX48 High Power Bipolar Transistor

BUX48 High Power Bipolar Transistor High oltage Switching Features: Collector-Emitter sustaining voltage- CEO(sus) = 400 (Minimum) - BUX48 = 450 (Minimum) -. Collector-Emitter saturation voltage- CE(sat) = 1.5 (Maximum) at I C = 10A for

More information

ULN2001, ULN2002 ULN2003, ULN2004

ULN2001, ULN2002 ULN2003, ULN2004 ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet production data Features Seven Darlingtons per package Output current 500 ma per driver (600 ma peak) Output voltage 50 V Integrated suppression

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

BC846PN/UPN_BC847PN BC846PN BC846UPN BC847PN. Type Marking Pin Configuration Package BC846PN BC846UPN. 1Os 1Os BC847PN SOT363 SC74 SOT

BC846PN/UPN_BC847PN BC846PN BC846UPN BC847PN. Type Marking Pin Configuration Package BC846PN BC846UPN. 1Os 1Os BC847PN SOT363 SC74 SOT NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collectoremitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY

More information

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS

More information

STGB10NB37LZ STGP10NB37LZ

STGB10NB37LZ STGP10NB37LZ STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications

More information

LF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT

LF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT LF00AB/C SERIES ERY LOW DROP OLTAGE REGULATORS WITH INHIBIT ERY LOW DROPOUT OLTAGE (5) ERY LOW QUIESCENT CURRENT (TYP. 50 µa IN OFF MODE, 500µA INON MODE) OUTPUT CURRENT UP TO 500 ma LOGIC-CONTROLLED ELECTRONIC

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D STD30NF06L 60 V

More information

This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. TDA2050 32W Hi-Fi AUDIO POWER AMPLIFIER HIGH OUTPUT POWER (50W MUSIC POWER IEC 268.3 RULES) HIGH OPERATING SUPPLY VOLTAGE (50V) SINGLE OR SPLIT SUPPLY OPERATIONS VERY LOW DISTORTION SHORT CIRCUIT PROTECTION

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BCD TO DECIMAL DECODER BCD TO DECIMAL DECODING OR BINARY TO OCTAL DECODING HIGH DECODED OUTPUT DRIVE CAPABILITY "POSITIVE LOGIC" INPUTS AND OUTPUTS: DECODED OUTPUTS GO HIGH ON SELECTION MEDIUM SPEED OPERATION

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS 2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base

More information

LD1117 SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS

LD1117 SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS LD7 SERIES LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS LOW DROPOUT OLTAGE( TYP) 2.85 DEICE PERFORMANCES ARE SUITABLE FOR SCSI-2 ACTIE TERMINATION OUTPUT CURRENT UP TO 800mA FIXED OUTPUT OLTAGE

More information

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21. DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved

More information

NPN low V CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN low V CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 03 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low V CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

More information

LM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER

LM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER LOW NOISE DUAL OPERATIONAL AMPLIFIER LOW VOLTAGE NOISE: 4.5nV/ Hz HIGH GAIN BANDWIDTH PRODUCT: 15MHz HIGH SLEW RATE: 7V/µs LOW DISTORTION:.2% EXCELLENT FREQUENCY STABILITY ESD PROTECTION 2kV DESCRIPTION

More information

HCC/HCF4032B HCC/HCF4038B

HCC/HCF4032B HCC/HCF4038B HCC/HCF4032B HCC/HCF4038B TRIPLE SERIAL ADDERS INERT INPUTS ON ALL ADDERS FOR SUM COMPLEMENTING APPLICATIONS FULLY STATIC OPERATION...DC TO 10MHz (typ.) @ DD = 10 BUFFERED INPUTS AND OUTPUTS SINGLE-PHASE

More information

MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS

MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS OUTPUT SWITCH CURRENT IN EXCESS OF 1.5A 2% REFERENCE ACCURACY LOW QUIESCENT CURRENT: 2.5mA (TYP.) OPERATING FROM 3V TO 40V FREQUENCY OPERATION TO 100KHz

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

.OPERATING SUPPLY VOLTAGE UP TO 46 V

.OPERATING SUPPLY VOLTAGE UP TO 46 V L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)

More information

TL084 TL084A - TL084B

TL084 TL084A - TL084B A B GENERAL PURPOSE JFET QUAD OPERATIONAL AMPLIFIERS WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE

More information

SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS

SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS 8 TO 35 V OPERATION 5.1 V REFERENCE TRIMMED TO ± 1 % 100 Hz TO 500 KHz OSCILLATOR RANGE SEPARATE OSCILLATOR SYNC TERMINAL ADJUSTABLE DEADTIME CONTROL INTERNAL

More information

NPN Darlington Power Silicon Transistor

NPN Darlington Power Silicon Transistor Available NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/539 DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTX level. This TO-213AA

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) SYNCHRONOUS PROGRAMMABLE 4-BIT BINARY COUNTER WITH ASYNCHRONOUS CLEAR INTERNAL LOOK-AHEAD FOR FAST COUNTING CARRY OUTPUT FOR CASCADING SYNCHRONOUSLY PROGRAMMABLE LOW-POWER TTL COMPATIBILITY STANDARDIZED

More information

M74HC4078TTR 8-INPUT NOR/OR GATE

M74HC4078TTR 8-INPUT NOR/OR GATE 8-INPUT NOR/OR GATE HIGH SPEED: t PD = 10ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

PBL3717A STEPPER MOTOR DRIVER

PBL3717A STEPPER MOTOR DRIVER PBL3717A STEPPER MOTOR DRIER FULL STEP - HALF STEP - QUARTER STEP OPERATING MODE BIPOLAR OUTPUT CURRENT UP TO 1 A FROM 10 UP TO 46 MOTOR SUPPLY OLTAGE LOW SATURATION OLTAGE WITH INTE- GRATED BOOTSTRAP

More information

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. 65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

HCF4017B DECADE COUNTER WITH 10 DECODED OUTPUTS

HCF4017B DECADE COUNTER WITH 10 DECODED OUTPUTS DECADE COUNTER WITH 10 DECODED OUTPUTS MEDIUM SPEED OPERATION : 10 MHz (Typ.) at V DD = 10V FULLY STATIC OPERATION STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V

More information

PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data Rev. 0 20 November 2006 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem

More information

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices*  Features MAXIMUM RATINGS General Purpose Transistors PNP Silicon Features These are PbFree Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

HCF4027B DUAL J-K MASTER SLAVE FLIP-FLOP

HCF4027B DUAL J-K MASTER SLAVE FLIP-FLOP DUAL J-K MASTER SLAVE FLIP-FLOP SET RESET CAPABILITY STATIC FLIP-FLOP OPERATION - RETAINS STATE INDEFINETELY WITH CLOCK LEVEL EITHER "HIGH" OR "LOW" MEDIUM-SPEED OPERATION - 16MHz (Typ. clock toggle rate

More information

LM337. Three-terminal adjustable negative voltage regulators. Features. Description

LM337. Three-terminal adjustable negative voltage regulators. Features. Description Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional

More information

BCX BCX56... NPN Silicon AF Transistors. For AF driver and output stages High collector current Low collctor-emitter saturation voltage

BCX BCX56... NPN Silicon AF Transistors. For AF driver and output stages High collector current Low collctor-emitter saturation voltage BCX4... BCX6... NPN Silicon AF Transistors For AF driver and output stages High collector current Low collctoremitter saturation voltage Complementary types: BCX...BCX (PNP) Pbfree (RoHS compliant) package

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

HCF4516B PRESETTABLE BINARY UP/DOWN COUNTER

HCF4516B PRESETTABLE BINARY UP/DOWN COUNTER PRESETTABLE BINARY UP/DOWN COUNTER MEDIUM SPEED OPERATION : 8 MHz (Typ.) at 10V SYNCHRONOUS INTERNAL CARRY PROPAGATION RESET AND PRESET CAPABILITY STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT

More information

TL074 TL074A - TL074B

TL074 TL074A - TL074B A B LOW NOISE JFET QUAD OPERATIONAL AMPLIFIERS WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT LOW NOISE e n = 15nV/ Hz (typ) OUTPUT SHORTCIRCUIT PROTECTION

More information

L297 STEPPER MOTOR CONTROLLERS

L297 STEPPER MOTOR CONTROLLERS L297 STEPPER MOTOR CONTROLLERS NORMAL/WAVE DRIVE HALF/FULL STEP MODES CLOCKWISE/ANTICLOCKWISE DIRECTION SWITCHMODE LOAD CURRENT REGULA- TION PROGRAMMABLE LOAD CURRENT FEW EXTERNAL COMPONENTS RESET INPUT

More information

SG3524 REGULATING PULSE WIDTH MODULATORS

SG3524 REGULATING PULSE WIDTH MODULATORS SG3524 REGULATING PULSE WIDTH MODULATORS COMPLETE PWM POWER CONTROL CIR- CUITRY UNCOMMITTED OUTPUTS FOR SINGLE- ENDED OR PUSH PULL APPLICATIONS LOW STANDBY CURRENT 8mA TYPICAL OPERATION UP TO 300KHz 1%

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

L78M00 SERIES POSITIVE VOLTAGE REGULATORS. www.tvsat.com.pl

L78M00 SERIES POSITIVE VOLTAGE REGULATORS. www.tvsat.com.pl SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION

More information

HCC4541B HCF4541B PROGRAMMABLE TIMER

HCC4541B HCF4541B PROGRAMMABLE TIMER HCC4541B HCF4541B PROGRAMMABLE TIMER 16 STAGE BINARI COUNTER LOW SYMMETRICAL OUTPUT RESISTANCE, TYPICALLY 100 OHM AT DD = 15 OSCILLATOR FREQUENCY RANGE : DC TO 100kHz AUTO OR MASTER RESET DISABLES OSCIL-

More information