INT-A-PAK Power Module Thyristor/Diode, 300 A

INT-A-PAK Power Module Thyristor/Diode, 300 A PRODUCT SUMMARY I T(A) Type Package Circuit INT-A-PAK 300 A Modules - Thyristor, Standard INT-A-PAK SCR/diode doubler circuit, negative control FEATURES Electrically isolated base plate 3000 RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Battery chargers Welders Power converters Alternators MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS ALUES UNITS DRM / RRM 800 I T(A) 53 C 300 A I TSM 60 Hz 6900 50 Hz 6500 A 50 Hz 24 I 2 t 60 Hz 95 ka 2 s I 2 t 240 ka 2 s T J Range -40 to 40 C ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK REERSE OLTAGE RSM / DSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE I RRM /I DRM AT 25 C ma 800 900 50 Revision: -Apr-4 Document Number: 94557

ON-STATE CONDUCTION Maximum average on-state current 300 A I at case temperature T(A) 80 conduction half sine wave 53 C Maximum RMS on-state current I T(RMS) As AC switch 6 t = 0 ms No voltage 6600 Maximum peak, one-cycle t = 8.3 ms reapplied 6900 A on-state, non-repetitive I TSM surge current t = 0 ms % RRM 5500 t = 8.3 ms reapplied Sine half wave, 5800 initial T J = t = 0 ms No voltage T J maximum 24 t = 8.3 ms reapplied 95 Maximum I 2 t for fusing I 2 t ka 2 s t = 0 ms % RRM 5 t = 8.3 ms reapplied 38 Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied 240 ka 2 s Low level value of threshold voltage T(TO) (6.7 % x x I T(A) < I < x I T(A) ), T J maximum 0.796 High level value of threshold voltage T(TO)2 (I > x I T(A) ), T J maximum 0.868 Low level value on-state slope resistance r t (6.7 % x x I T(A) < I < x I T(A) ), T J maximum 0.972 High level value on-state slope resistance r t2 (I > x I T(A) ), T J maximum 0.88 m Maximum on-state voltage drop TM T J = 25 C, 500 A I pk SCR.35 FM DIODE.20 SWITCHING Gate current A, di Typical delay time t g /dt = A/μs d.0 d = 0.67 % DRM, T J = 25 C μs I Typical turn-off time t TM = 300 A, T J = T J maximum, di/dt = 20 A/μs, R = 50 q d/dt = 20 /μs, Gate 0, t p = 500 μs BLOCKING Maximum critical rate of rise of off-state voltage d/dt T J = T J maximum linear to 67 % rated DRM 500 /μs Maximum peak reverse and off-state leakage current I DRM, I RRM T J = T J maximum, rated DRM / RRM applied 50 ma RMS insulation voltage INS 50 Hz, circuit to base, all terminal shorted, t = s 3000 Revision: -Apr-4 2 Document Number: 94557

TRIGGERING Maximum peak gate power P GM T J = T J maximum, t p 5 ms 0.0 Maximum average gate power P G(A) T J = T J maximum, f = 50 Hz, d% = 50 2.0 W Maximum peak positive gate current I GM T J = T J maximum, t p 5 ms 3.0 A Maximum required DC gate voltage to GT 3 Maximum required DC gate current to trigger I GT T J = 25 C Anode supply: 2 resistive load 200 Maximum holding current I H 600 ma Maximum peak positive gate voltage + GM 20 T J = T J maximum, t p 5 ms Maximum peak negative gate voltage - GM 5.0 DC gate voltage not to trigger GD T J = T J maximum 0.30 DC gate current not to trigger I GD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated DRM anode to cathode applied 0 ma Maximum non-repetitive rate of rise of turned-on current di/dt Gate drive 20, 20, t r μs T J = T J maximum, anode voltage 80 % DRM 0 A/μs THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating T temperature range J -40 to 40 C Maximum storage temperature range T Stg -40 to 50 Maximum thermal resistance, R junction to case per junction thjc DC operation 0.9 K/W Maximum thermal resistance, R case to heatsink per module thcs Mounting surface smooth, flat and greased 0.035 A mounting compound is recommended busbar to IAP the torque should be rechecked after a Mounting torque ± 0 % IAP to heatsink and Approximate weight period of 3 hours to allow for the spread of the compound. Lubricated threads. Case style 4 to 6 Nm 500 g 7.8 oz. INT-A-PAK R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEICES UNITS 80 20 90 60 30 80 20 90 60 30 SKL300 0.09 0.022 0.028 0.04 0.068 0.03 0.023 0.03 0.043 0.069 K/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Revision: -Apr-4 3 Document Number: 94557

www.vishay.com Maximum Allowable Case Temperature ( C) 50 Conduction Angle 30 60 50 90 20 80 0 0 50 50 200 250 300 350 Average On-state Current (A) Maximum Average On-state Power Loss (W) 600 500 400 300 RMS Limit Average On-state Current (A) DC Conduction Period 200 80 20 90 60 30 0 0 200 300 400 500 Fig. - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) 50 50 0 Conduction Angle 30 60 DC 90 20 80 0 200 300 400 500 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 6000 5500 5000 4500 4000 3500 3000 Maximum Non-repetitive Surge Current ersus Pulse Train Duration Initial Tj = 40 C No oltage Reapplied Rated rrm reapplied 2500 0 Number of Equal Amplitude Half Cycle Current Pulsed (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 500 400 300 200 RMS Limit Conduction Angle 80 20 90 60 30 0 0 50 50 200 250 300 350 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 6500 6000 5500 5000 4500 4000 3500 3000 2500 Maximum Non-repetitive Surge Current ersus Pulse Train Duration Initial Tj = 40 C No oltage Reapplied Rated rrm reapplied 2000 0.0 0. 0 Pulse Train Durations (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: -Apr-4 4 Document Number: 94557

00 00 Instantaneous On-state Current (A) 0 0 Tj = 25 C Tj = 40 C 0.5.0.5 2.0 2.5 3.0 3.5 4.0 Instantaneous On-state Current (A) 0 0 Tj = 40 C Tj = 25 C 0.5.0.5 2.0 2.5 3.0 Instantaneous On-state oltage () Instantaneous On-state oltage () Fig. 7 - On-State oltage Drop Characteristics (SCR) Fig. 8 - On-State oltage Drop Characteristics (Diode) Transient Thermal Impedance Z thjc (K/W) 0. 0.0 0.00 Single Pulse (Thermal Resistance) 0.000 E-04 E-03 E-02 E-0 E+00 E+0 E+02 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code S-S KL 300 08 PbF 2 3 4 5 - product 2 - Circuit configuration 3 - Current rating (300 = 300 A) 4 - oltage rating (08 = 800 ) 5 - PbF = Lead (Pb)-free Revision: -Apr-4 5 Document Number: 94557

CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ ~ SCR/diode doubler circuit, negative control L + 2 + - 3 - K2 G2 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9500 Revision: -Apr-4 6 Document Number: 94557

Outline Dimensions INT-A-PAK Diode DIMENSIONS in millimeters (inches) (See table) A A B E D C 8 (0.32) 94 (3.70) 7 (0.27) 80 (3.5) 3 screws M6 x 3 2 34 (.34) 2 2 holes Ø 6.5 A B C D E 23 (0.9) 30 (.8) 36 (.42) - - Document Number: 9500 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 29-Sep-08

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