How To Make A Field Effect Transistor (Field Effect Transistor) From Silicon P Channel (Mos) To P Channel Power (Mos) (M2) (Mm2)

Transcription

1 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 17 mω (typ.) High forward transfer admittance: Yfs = 16 S (typ.) Low leakage current: IDSS = 1 µa (max) (VDS = 4 V) Enhancement-mode: Vth =.8 to 2. V (VDS = 1 V, ID = 1 ma) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 4 V Drain-gate voltage (R GS 2 k9) V DGR 4 V Gate-source voltage V GSS 2 V Drain current Drain power dissipation (t 1 s) (Note 2a) Drain power dissipation (t 1 s) (Note 2b) Single pulse avalanche energy (Note 3) DC (Note 1) I D 8 Pulsed(Note 1) I DP 32 P D 1.9 W P D 1. W E AS 59.4 mj Avalanche current I AR 8 A Repetitive avalanche energy (Note 2a) (Note 4) E AR.19 mj Channel temperature T ch 15 C Storage temperature range T stg 55 to 15 C A JEDEC JEITA TOSHIBA 2-6J1B Weight:.8 g (typ.) Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution

2 TPC811 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t 1 s) (Note 2a) Thermal resistance, channel to ambient (t 1 s) (Note 2b) R th (ch-a) 65.8 C/W R th (ch-a) 125 C/W Marking (Note 5) TPC811 Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 15 C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR (unit: mm) FR (unit: mm) (a) (b) Note 3: V DD 24 V, T ch 25 C (initial), L 1. mh, R G 25 9, I AR 8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (1 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)

3 TPC811 Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS 16 V, V DS V A Drain cut-off current I DSS V DS 4 V, V GS V A Drain-source breakdown voltage V (BR) DSS I D ma, V GS V 4 V V (BR) DSX I D ma, V GS 2 V 25 Gate threshold voltage V th V DS V, I D 1 ma.8 2. V Drain-source ON resistance R DS (ON) V GS 4 V, I D 4. A m9 V GS V, I D 4. A Forward transfer admittance Y fs V DS V, I D 4. A 8 16 S Input capacitance C iss 218 Reverse transfer capacitance C rss V DS V, V GS V, f 1 MHz 275 pf Output capacitance C oss 33 Switching time Rise time t r V 6. V I GS D 4 A V V OUT Turn-ON time t on 15 Fall time t f RL 5 9 ns Turn-OFF time t off Duty 1%, t w 1 s V DD 2 V 115 Total gate charge Q (gate-source plus gate-drain) g 48 V DD 32 V, V GS V, Gate-source charge 1 Q gs1 I D 8 A 5.5 Gate-drain ( miller ) charge Q gd 12 nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP 32 A Forward voltage (diode) V DSF I DR 8 A, V GS V 1.2 V

4 TPC811 Drain current ID (A) I D V DS VGS 2.25 V Drain current ID (A) I D V DS VGS 2.25 V Drain current ID (A) VDS V 25 1 I D V GS Drain-source voltage VDS (V) V DS V GS ID 8. A Ta 55 C Gate-source voltage V GS (V) Gate-source voltage V GS (V) Forward transfer admittance Yfs (S) VDS V Y fs I D Ta 55 C 1 25 Drain-source ON resistance RDS (ON) (m9) R DS (ON) I D VGS 4 V Drain current I D (A) Drain current I D (A)

5 TPC811 5 R DS (ON) Tc I DR V DS Drain-source ON resistance RDS (ON) (m9) VGS 4 V V ID 8. A 2./ 4. A ID 2./ 4./ 8. A Drain reverse current IDR (A) VGS V, 1 V Case temperature Tc ( C) Capacitance C (pf) Capacitance V DS Ciss Coss Crss 1 5 VGS V f 1 MHz Gate threshold voltage Vth (V) V th Tc Case temperature Tc ( C) VDS V ID 1 ma Drain power dissipation PD (W) (1) (2) P D Tc (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t 1 s Drain-source voltage VDS (V) VDS Dynamic Input/Output Characteristics VGS 8 ID A VDD 32 V Gate-source voltage VGS (V) Ambient temperature Tc ( C) Total gate charge Q g (nc)

6 TPC811 r th t w Normalized transient thermal impedance rth ( C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t 1 s (2) (1) Single pulse Pulse width t w (s) Safe Operating Area 5 3 ID max (pulse)* 1 ms* 1 ms* Drain current ID (A) *: Single pulse.3 Curves must be derated linearly with increase in temperature. VDSS max

7 TPC811 RESTRICTIONS ON PRODUCT USE 77EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice

8 This datasheet has been download from: Datasheets for electronics components.