2SK1056, 2SK1057, 2SK1058

Transcription

1 SK6, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ160, SJ161 and SJ16 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

2 1 3 SK6, SK7, SK8 Outline TO-3P D G S 1. Gate. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage SK6 V DSX V SK7 140 SK8 160 Gate to source voltage V GSS ±1 V Drain current I D 7 A Body to drain diode reverse drain current I DR 7 A Channel dissipation Pch* 1 0 W Channel temperature Tch 10 C Storage temperature Tstg to +10 C Note: 1. Value at T C = C

3 SK6, SK7, SK8 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK6 V (BR)DSX V I D = ma, V GS = V breakdown voltage SK7 140 SK8 160 Gate to source breakdown voltage V (BR)GSS ±1 V I G = ±0 µa, V DS = 0 Gate to source cutoff voltage V GS(off) V I D = 0 ma, V DS = V Drain to source saturation voltage V DS(sat) 1 V I D = 7 A, V GD = 0 * 1 Forward transfer admittance yfs S I D = 3 A, V DS = V * 1 Input capacitance Ciss 600 pf V GS = V, V DS = V, Output capacitance Coss 30 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on time t on 180 ns V DD = 0 V, I D = 4 A, Turn-off time t off 60 ns Note: 1. Pulse test 3

4 SK6, SK7, SK8 Channel Dissipation Pch (W) Power vs. Temperature Derating 0 0 Case Temperature T C ( C) 10 0 Maximum Safe Operation Area I D max (Continuous) PW = ms 1 shot DC Operation (T C = C) PW = 0 ms 1 shot PW = 1 s 1 shot Ta = C 0. SK6 SK7 SK Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics V GS = V T C = C Pch = 0 W Drain to Source Voltage V DS (V) V DS = V T C = C Gate to Source Voltage V GS (V) 4

5 SK6, SK7, SK8 Drain to Source Saturation Voltage V DS (on) (V) V GD = 0 Drain to Source Saturation Voltage vs. Drain Current C 7 C T C = C Drain to Source Voltage V DS (V) Drain to Source Voltage vs. Gate to Source Voltage T C = C A A I D = 1 A Gate to Source Voltage V GS (V) Input Capacitance Ciss (pf) Input Capacitance vs. Gate Source Voltage V DS = V f = 1 MHz Gate to Source Voltage V GS (V) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Frequency T C = C V DS = V I D = A k 30 k 0 k 300 k 1 M 3 M M Frequency f (Hz)

6 SK6, SK7, SK8 00 Switching Time vs. Drain Current Switching Time ton,toff (ns) t on t off Switching Time Test Circuit Output R L = Ω Input PW = 0µs duty ratio = 1 % 0 Ω 0 V Input Waveforms 90 % % t on t off Output % 90 % 6

7 1.6 ± 0.3 φ3. ± 0..0 ± ± Unit: mm Max ± ± ± ± ± ± 0..4 ± 0. Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms.0 g

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