IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode

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1 IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery antiparalleldiode IKWNH3 Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

2 G C E Highspeedswitchingseriesthirdgeneration IKWNH3 HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryantiparalleldiode Features: C TRENCHSTOP TM technologyoffering verylowvcesat lowemi Verysoft,fastrecoveryantiparalleldiode maximumjunctiontemperature7 C qualifiedaccordingtojedecfortargetapplicatio Pbfreeleadplating;RoHScompliant completeproductspectrumandpspicemodels: Applicatio: uninterruptiblepowersupplies weldingconverters converterswithhighswitchingfrequency G E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj= C Tvjmax Marking Package IKWNH3 V A.V 7 C KH3 PGTO73 Rev..,

3 Highspeedswitchingseriesthirdgeneration IKWNH3 TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditio Revision History Disclaimer Rev..,

4 IKWNH3 Maximum Ratings For optimum lifetime and reliability, Infineon recommends operating conditio that do not exceed 8% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Collectoremitter voltage VCE V DC collector current, limited by Tvjmax TC = C TC = C IC 3.. A Pulsed collector current, tp limited by Tvjmax ICpuls 6. A Turn off safe operating area VCE V, Tvj 7 C 6. A Diode forward current, limited by Tvjmax TC = C TC = C IF. 7. A Diode pulsed current, tp limited by Tvjmax IFpuls 6. A Gateemitter voltage VGE ± V Short circuit withstand time VGE =.V, VCC 6V Allowed number of short circuits < Time between short circuits:.s Tvj = 7 C tsc Power dissipation TC = C Power dissipation TC = C Ptot 7.. W Operating junction temperature Tvj...+7 C Storage temperature Tstg...+ C µs Soldering temperature, wave soldering.6mm (.63in.) from case for s C 6 Mounting torque, M3 screw Maximum of mounting processes: 3 M.6 Nm Thermal Resistance Parameter Characteristic Symbol Conditio Max. Value Unit IGBT thermal resistance, junction case Rth(jc).7 K/W Diode thermal resistance, junction case Rth(jc). K/W Thermal resistance junction ambient Rth(ja) K/W Rev..,

5 IKWNH3 Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value Unit min. typ. max. VGE =.V, IC =.A Tvj = C Tvj = C Tvj = 7 C...7. VF VGE = V, IF = 7.A Tvj = C Tvj = 7 C Diode forward voltage VF VGE = V, IF =.A Tvj = C Tvj = C Tvj = 7 C Gateemitter threshold voltage VGE(th) IC =.ma, VCE = VGE Zero gate voltage collector current ICES VCE = V, VGE = V Tvj = C Tvj = 7 C Gateemitter leakage current IGES VCE = V, VGE = V 6 na Traconductance gfs VCE = V, IC =.A 7. S Static Characteristic Collectoremitter breakdown voltage V(BR)CES VGE = V, IC =.ma Collectoremitter saturation voltage VCEsat Diode forward voltage V V V V V. µa. Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value Unit min. typ. max nc 3. nh A Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse trafer capacitance Cres Gate charge QG Internal emitter inductance measured mm (.97 in.) from case LE Short circuit collector current Max. short circuits IC(SC) Time between short circuits:.s VCE = V, VGE = V, f = MHz VCC = 96V, IC =.A, VGE = V VGE =.V, VCC 6V, tsc µs Tvj = 7 C pf Rev..,

6 IKWNH3 Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max mj. mj. mj 6.8 µc 7.7 A A/µs IGBT Characteristic, at Tvj = C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = 6V, IC =.A, VGE =./.V, RG(on) = 3.Ω, RG(off) = 3.Ω, Lσ = 9nH, Cσ = 67pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Diode Characteristic, at Tvj = C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = C, VR = 6V, IF =.A, dif/dt = A/µs dirr/dt Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max mj.9 mj. mj 7.7 µc 9.8 A 8 A/µs IGBT Characteristic, at Tvj = 7 C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = 7 C, VCC = 6V, IC =.A, VGE =./.V, RG(on) = 3.Ω, RG(off) = 3.Ω, Lσ = 9nH, Cσ = 67pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Diode Characteristic, at Tvj = 7 C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = 7 C, VR = 6V, IF =.A, dif/dt = A/µs dirr/dt 6 Rev..,

7 IKWNH3 7 IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 6 TC=8 TC= 3 TC=8 TC= tp=µs µs µs µs µs µs DC. f, SWITCHING FREQUENCY [khz] VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Collector current as a function of switching frequency (Tj 7 C, D=., VCE=6V, VGE=/V, rg=3ω) Figure. Forward bias safe operating area (D=, TC= C, Tj 7 C; VGE=V) 3 IC, COLLECTOR CURRENT [A] Ptot, POWER DISSIPATION [W] 7 7 TC, CASE TEMPERATURE [ C] 7 7 TC, CASE TEMPERATURE [ C] Figure 3. Power dissipation as a function of case temperature (Tj 7 C) Figure. Collector current as a function of case temperature (VGE V, Tj 7 C) 7 Rev..,

8 IKWNH3 6 VGE=V VGE=V 7V 7V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 6 V 3V V 9V 3 7V V 3V V 9V 3 7V V 6 V VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical output characteristic (Tj= C) 6 8. VCE(sat), COLLECTOREMITTER SATURATION [V] Tj= C Tj=7 C IC, COLLECTOR CURRENT [A] Figure 6. Typical output characteristic (Tj=7 C) 6 3 VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] IC=7.A IC=A IC=3A 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical trafer characteristic (VCE=V) Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (VGE=V) 8 Rev..,

9 IKWNH3 td(off) tf td(on) tr t, SWITCHING TIMES [] t, SWITCHING TIMES [] td(off) tf td(on) tr 3 3 IC, COLLECTOR CURRENT [A] Figure 9. Typical switching times as a function of collector current (ind. load, Tj=7 C, VCE=6V, VGE=/V, rg=3ω, test circuit in Fig. E) 9 7 VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] td(off) tf td(on) tr t, SWITCHING TIMES [] 7 Figure. Typical switching times as a function of gate resistor (ind. load, Tj=7 C, VCE=6V, VGE=/V, IC=A, test circuit in Fig. E) rg, GATE RESISTOR [Ω] 7 typ. min. max Tj, JUNCTION TEMPERATURE [ C] 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure. Typical switching times as a function of junction temperature (ind. load, VCE=6V, VGE=/V, IC=A, rg=3ω, test circuit in Fig. E) Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.mA) 9 Rev..,

10 IKWNH3 7 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 6 Eoff Eon Ets IC, COLLECTOR CURRENT [A] Figure 3. Typical switching energy losses as a function of collector current (ind. load, Tj=7 C, VCE=6V, VGE=/V, rg=3ω, test circuit in Fig. E) 7 9 Figure. Typical switching energy losses as a function of gate resistor (ind. load, Tj=7 C, VCE=6V, VGE=/V, IC=A, test circuit in Fig. E). 3. Eoff Eon Ets 3. E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] rg, GATE RESISTOR [Ω].... Eoff Eon Ets Tj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical switching energy losses as a function of junction temperature (ind load, VCE=6V, VGE=/V, IC=A, rg=3ω, test circuit in Fig. E) Figure 6. Typical switching energy losses as a function of collector emitter voltage (ind. load, Tj=7 C, VGE=/V, IC=A, rg=3ω, test circuit in Fig. E) Rev..,

11 IKWNH3 6 V 96V C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] 8 6 Cies Coes Cres QGE, GATE CHARGE [nc] Figure 7. Typical gate charge (IC=A) 3 8 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] Figure 8. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] 6 8 VGE, GATEEMITTER VOLTAGE [V] Figure 9. Typical short circuit collector current as a function of gateemitter voltage (VCE 6V, start attj= C) Figure. Short circuit withstand time as a function of gateemitter voltage (VCE 6V, start at Tj C) Rev..,

12 IKWNH3 ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] D= single pulse. D= single pulse. i: 3 ri[k/w]: 3.9E τi[s]:.6e 3.E.9E E6 E E... i: 3 ri[k/w]: E3 τi[s]:.e.e3 8.7E E6 E tp, PULSE WIDTH [s] Figure. IGBT traient thermal impedance (D=tp/T)... Tj= C, IF = A Tj=7 C, IF = A Tj= C, IF = A Tj=7 C, IF = A Qrr, REVERSE RECOVERY CHARGE [µc] 7 trr, REVERSE RECOVERY TIME []. Figure. Diode traient thermal impedance as a function of pulse width (D=tp/T) E tp, PULSE WIDTH [s] dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 3. Typical reverse recovery time as a function of diode current slope (VR=6V) Figure. Typical reverse recovery charge as a function of diode current slope (VR=6V) Rev..,

13 IKWNH3 Tj= C, IF = A Tj=7 C, IF = A dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] Tj= C, IF = A Tj=7 C, IF = A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical reverse recovery current as a function of diode current slope (VR=6V) 7 9. Tj= C Tj=7 C IF=3.7A IF=7.A IF=A 3. VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] Figure 6. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=6V) 3 3 dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical diode forward current as a function of forward voltage 3 Figure 8. Typical diode forward voltage as a function of junction temperature Rev..,

14 IKWNH3 PGTO73 Rev..,

15 IKWNH3 vge(t) I,V 9% VGE dif/dt a a % VGE b b t IC(t) di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t vce(t) t td(off) tf td(on) t tr Figure A. vge(t) 9% VGE Figure D. % VGE t IC(t) CC % IC t vce(t) t E off = t VCE x IC x dt E t t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor Cr, (only for ZVT switching) on = VCE x IC x d t % VCE t3 t t3 t t Figure B. Rev..,

16 IKWNH3 High speed switching series third generation Revision History IKWNH3 Revision:, Rev.. Previous Revision Revision Date Subjects (major changes since last revision) Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 876 Munich, Germany 876 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditio or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditio and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applicatio or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other perso may be endangered. 6 Rev..,