MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS 3Power-Transistor,100V BSZ440N10NS3G. DataSheet. PowerManagement&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS 3PowerTransistor,V BSZ44NNS3G DataSheet Rev.2.1 Final PowerManagement&Multimarket
2 OptiMOSª3PowerTransistor,V BSZ44NNS3G 1Description Features Verylowgatechargeforhighfrequencyapplications Optimizedfordcdcconversion Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 15 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication HalogenfreeaccordingtoIEC S3O Table1KeyPerformanceParameters Parameter Value Unit VDS V RDS(on),max 44 mω ID 18 A S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks BSZ44NNS3 G PGTSDSON8 44NN 1) JSTD2 and JESD22 2 Rev.2.1,21526
3 OptiMOSª3PowerTransistor,V BSZ44NNS3G TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer Rev.2.1,21526
4 OptiMOSª3PowerTransistor,V BSZ44NNS3G 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings at 25 C Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current ID Pulsed drain current 2) ID,pulse 72 A TC=25 C A TC=25 C TC= C TA=25 C,RthJA=5K/W 1) Avalanche energy, single pulse EAS 17 mj ID=12A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 29 W TC=25 C Operating and storage temperature Tj,Tstg C IEC climatic category; DIN IEC 681: 55/15/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.3 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) see figure 3 4 Rev.2.1,21526
5 OptiMOSª3PowerTransistor,V BSZ44NNS3G 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS V VGS=V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=12µA Zero gate voltage drain current IDSS.1 1 µa VDS=V,VGS=V,Tj=25 C VDS=V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG 1.5 Ω mω VGS=V,ID=12A VGS=6V,ID=6A Transconductance gfs 8 15 S VDS >2 ID RDS(on)max,ID=12A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss pf VGS=V,VDS=5V,f=1MHz Output capacitance 1) Coss pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 6 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 4.3 ns Rise time tr 1.8 ns Turnoff delay time td(off) 9.1 ns Fall time tf 2. ns VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.2 nc VDD=5V,ID=6A,VGS=toV Gate to drain charge Qgd 1.3 nc VDD=5V,ID=6A,VGS=toV Switching charge Qsw 2. nc VDD=5V,ID=6A,VGS=toV Gate charge total 1) Qg nc VDD=5V,ID=6A,VGS=toV Gate plateau voltage Vplateau 4.5 V VDD=5V,ID=6A,VGS=toV Output charge 1) Qoss nc VDD=5V,VGS=V 1) Defined by design. Not subject to production test. 2) See Gate charge waveforms for parameter definition 5 Rev.2.1,21526
6 OptiMOSª3PowerTransistor,V BSZ44NNS3G Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS 18 A TC=25 C Diode pulse current IS,pulse 72 A TC=25 C Diode forward voltage VSD V VGS=V,IF=18A,Tj=25 C Reverse recovery time trr 44 ns VR=5V,IF=6A,diF/dt=A/µs Reverse recovery charge Qrr 61 nc VR=5V,IF=6A,diF/dt=A/µs 6 Rev.2.1,21526
7 OptiMOSª3PowerTransistor,V BSZ44NNS3G 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 4 Diagram2:Draincurrent Ptot[W] 2 ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS V Diagram3:Safeoperatingarea 3 Diagram4:Max.transientthermalimpedance µs ns.5 ID[A] 1 µs µs ZthJC[K/W] ms DC single pulse VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,21526
![Diagram3:Safeoperatingarea 3 Diagram4:Max.transientthermalimpedance 1 2 1 µs ns.5 ID[A] 1 µs µs ZthJC[K/W].2.1 1 ms DC.](/docs-images/46/21473956/images/page_7.jpg "5.2.1 single pulse 1 1 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 5 4 3 2 1 tp[s]")
8 OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram5:Typ.outputcharacteristics 5 4 V 7 V Diagram6:Typ.drainsourceonresistance 7 5 V V 6 V 7 V 5 ID[A] V 6 V RDS(on)[mΩ] 4 3 V 4.5 V 5 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 4 Diagram8:Typ.forwardtransconductance ID[A] 2 gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8 Rev.2.1,21526
![5 V 5 V 2 1 2 3 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 2 3 4 5 6 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.](/docs-images/46/21473956/images/page_8.jpg "transfercharacteristics 4 Diagram8:Typ.")
9 OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram9:Drainsourceonstateresistance 9 Diagram:Typ.gatethresholdvoltage RDS(on)[mΩ] % typ VGS(th)[V] µa 12 µa Tj[ C] RDS(on)=f(Tj);ID=12A;VGS=V Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances 4 Diagram12:Forwardcharacteristicsofreversediode 3 25 C 15 C 25 C, 98% 15 C, 98% 3 Ciss 2 C[pF] 2 Coss IF[A] 1 1 Crss VDS[V] C=f(VDS);VGS=V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.1,21526
![6 2 2 6 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.](/docs-images/46/21473956/images/page_9.jpg "capacitances 4 Diagram12:Forwardcharacteristicsofreversediode 3 25 C 15 C 25 C, 98% 15 C, 98% 3 Ciss 2 C[pF] 2 Coss IF[A] 1 1 Crss 2 4")
10 OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram13:Avalanchecharacteristics 2 Diagram14:Typ.gatecharge 8 8 V 5 V 6 IAS[A] 1 C 25 C VGS[V] 4 2 V 125 C tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) Qgate[nC] VGS=f(Qgate);ID=6Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 1 Gate charge waveforms 5 VBR(DSS)[V] Tj[ C] VBR(DSS)=f(Tj);ID=1mA Rev.2.1,21526
![IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 4 6 8 Qgate[nC] VGS=f(Qgate);ID=6Apulsed;parameter:VDD](/docs-images/46/21473956/images/page_10.jpg "Diagram15:Drainsourcebreakdownvoltage 1 Gate charge waveforms 5 VBR(DSS)[V] 95 9 6 2 2 6 14 18 Tj[")
11 OptiMOSª3 PowerTransistor, V BSZ44NNS3 G 6 Package Outlines Figure 1 Outline PGTSDSON8, dimensions in mm/inches 11 Rev. 2.1, 21526
12 OptiMOSª3 PowerTransistor, V BSZ44NNS3 G Revision History BSZ44NNS3 G Revision: 21526, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Insert pin numbered package drawing and trr and Qrr values We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.1, 21526
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,40V BSC010N04LS. DataSheet. PowerManagement&Multimarket
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FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
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Final data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)
*.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95
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Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
TSM2N7002K 60V N-Channel MOSFET
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IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET
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AUIRLR2905 AUIRLU2905
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IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
5A 3A. Symbol Parameter Value Unit
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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AUIRFR8405 AUIRFU8405
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N-Channel 40-V (D-S) 175 C MOSFET
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BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W
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SD4840/4841/4842/4843/4844
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N-Channel 20-V (D-S) 175 C MOSFET
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Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U
BAS6... Silicon Switching Diode For highspeed switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAS6 BAS6W BAS6L BAS6V BAS6W BAS63W BAS6S BAS6U BAS67L4! $ # " "!,,,!,,!
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N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
N-channel TrenchMOS logic level FET
SOT23 Rev. 2 7 November 2 Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
O p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n
V2.4. May 2012 O p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n IFAT PMM APS SE DS Mößlacher Christian Guillemant Olivier Edition 2011-02-02 Published by
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
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Features. Symbol JEDEC TO-220AB
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IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS )
MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: R DS(ON) = 3.8 mω (typ.)
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
Transistor MOS. Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS
Transistor MOS Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS - Pages 2 à 9 : Documentation constructeur VNP49N04 NOTA : Tous les documents fournis seront remis à
STP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V
VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified
RGB Wall Washer Using ILD4035
ILD4035 Application Note AN216 Revision: 1.0 Date: RF and Protection Devices Edition Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal
BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
STP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V
Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C - - -50 V
SOT23 Rev. 1 23 May 211 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009
May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon
Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)
Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
P-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
IRFR3707Z IRFU3707Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR
UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive
5SNA 3600E170300 HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 44-6 2-24 5SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback
Smart igh-side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating oltage bb 5.5...40 Active channels one four parallel On-state Resistance R ON 90mΩ 22.5mΩ Nominal load current
SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)
MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
QFET TM FQP50N06. Features. TO-220 FQP Series
60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
BUK96180-100A. N-channel TrenchMOS logic level FET
D2PAK Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits