Application Note, V1.0, Nov AN Using the NTC inside a power electronic module IMM INP LP
|
|
- Mercy Greer
- 7 years ago
- Views:
Transcription
1 Application Note, V1.0, Nov AN Using the NTC inside a power electronic module C o n s i d e r a t i o n s r e g a r d i n g t e m p e r a t u r e m e a s u r e m e n t IMM INP LP
2 Edition Published by Infineon Technologies AG Warstein, Germany Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 AN Revision History: V1.0 Previous Version: Page none Subjects (major changes since last revision) This Application Note replaces the AN entitled Using integrated NTC with reliable isolation We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: info.power@infineon.com Application Note 3 V1.0,
4 Table of Contents Page 1 Outline Internal design Isolation considerations Considering the thermal situation for the NTC Temperature measurement with NTC, analog approach Dimensioning R 1 for the voltage divider Temperature measurement with NTC, digital approach... 9 Application Note 4 V1.0,
5 Internal design 1 Outline One of the most critical parameters in power electronic devices is the chip temperature. A direct measurement however would require a sensor mounted on the chip or even being part of it. This would reduce the active area that contributes to the chip s current carrying capabilities. A viable alternative to determine the chips temperature is the calculation of the junction temperature using a thermal model and measuring the base plate s temperature to have a known point to start from. In many of Infineon s power electronic modules, thermistors, also known as NTC, are integrated as a temperature sensor to ease the design of an accurate temperature measurement. The present application note deals with several topics related to isolation requirements, accessing the NTC and reading the temperature value from it. 2 Internal design The NTC is mounted in close vicinity to the silicon chips to achieve a close thermal coupling. Depending on the module, the NTC is mounted either on the same DCB as the silicon or it may be mounted on a separate substrate: NTC inside the EconoDUAL 3 mounted on a separate DCB close to the IGBT NTC inside a module without baseplate, mounted close to the silicon 2.1 Isolation considerations Independent from the NTC s position, it is covered with the isolating gel that fills the module. In any regular operating condition, the isolation requirements are met. An isolation test is conducted during production according to the standard EN50187 to assure the isolation quality. The standard defines several levels of isolation quality, differentiating in functional and reinforced isolation. Reinforced isolation, often required in inverter designs, is defined as: An improved basic isolation with such mechanical and electrical properties that, in itself, the isolation provides the same degree of protection against electrical shock as double isolation. It may consist of one or more layers of isolation material. Application Note 5 V1.0,
6 Considering the thermal situation for the NTC In case of failure, the possibility exists, that a conducting path connecting the high voltage to the NTC may come to existence as hinted out in Figure 1: Figure 1 Conducting path in case of failure The path itself could be formed by moving bond wires that change their position during the failure event or by a plasma path forming as a consequence of arcing during failure. For this reason, the isolation for the internal NTC only qualifies a functional isolation. In case reinforced isolation is required, additional isolating barriers have to be added externally. Several methods have proven to be viable alternatives over the recent years, among them: Having the control designed with reference to the high voltage and add an isolation barrier between touchable parts and the whole control electronic Use analog amplifiers with internal isolation barrier to sense the voltage across the NTC Transfer the NTC s voltage to a digital information that can be transported to the control by means of isolating elements like magnetic or optic couplers Though in some applications a functional isolation for the NTC could be sufficient it should carefully be checked that all isolation requirements for the particular design are met. 3 Considering the thermal situation for the NTC The NTC, mounted to a module s DCB, is connected to thermal flow inside the module as briefly depicted in Figure 2: Figure 2 Flow of thermal energy inside a power electronic module The majority of heat generated in the chip flows directly to the heatsink from where it is dissipated to the environment. Additionally, heat flows through the DCB material and the baseplate towards the NTC s position. As heat does not flow instantaneously, the NTC is only suitable to represent the case temperature in static points of operation. Transient phenomena like heat generated in short circuit conditions can not be monitored or detected as the correlating time constants are far too small. As an important consequence, the NTC can not be used for short circuit protection! Application Note 6 V1.0,
7 Considering the thermal situation for the NTC An equivalent schematic representing the thermal situation and the possible pathes for the heat to flow is given in Figure 3 Figure 3 Equivalent thermal schematic From this overview, two conclusions can be drawn: 1. As there is a temperature drop along the path R thjntc connecting the chip s junction to the NTC, the thermistor s temperature T NTC has to be lower than the junction temperature T Junction 2. For the same reason, the temperature of the NTC has to be higher than the temperature that can be detected at the heatsink. From experience, the difference between the heat sink s temperature and the NTC s temperature is about 10K at temperature levels common for power electronic devices. Knowing the proper values for the R th -chain is mandatory if temperatures that cannot be measured directly are calculated from these values. For a given module, the according values for R thjc and R thch can be read from the datasheet for both the IGBT as well as for the diode. IGBT values Diode values Figure 4 R th -Values as printed in Infineon s datasheets for power electronic modules With these values the thermal situation now can be calculated T T T J C H = T C = T H = T + P amb V + P V + P R R V thjc thch R thha T J = T amb + P V R th = T amb + P V ( R + R + R ) thjc thch thha T NTC ~ TH + 10K = Tamb + PV RthHA + 10K T H Application Note 7 V1.0,
8 Temperature measurement with NTC, analog approach As the NTC only reflects the case temperature, it is sufficient to know the sum of losses and the module s total R thch that is given in the section Modul / module within the datasheet as well: Figure 5 R th -Value for a complete module as printed in Infineon s datasheets For more information about thermal modeling and calculation of thermal aspects please check the Infineon database for the application note AN Thermal equivalent circuit models. 4 Temperature measurement with NTC, analog approach This basic approach is based on a voltage divider with the NTC as a thermally sensitive device as shown in Figure 6: R( ϑ) U R = U1 R + R( ϑ) 1 Figure 6 Voltage divider utilizing the internal NTC The charakteristic of the NTC is given in the datasheet in two different formats. A graphic representation R=f(ϑ) is given completed by parameters to analytically describe an approximation of the graph. The valid mathematical representation is R( ϑ ) 1 1 B T2 T1 = R25 e with the parameters B25 /100 = 3433K, R25 = 5kΩ, T1 = 298, 15K For a more accurate calculation, the datasheets also provide the values B 25/50 and B 25/80 in case only a smaller temperature range is in focus. With the voltage U R known through measurement, the actual resistance R(ϑ) can be calculated to be R ) = R U R (ϑ 1, U1 UR leading to an expression for the actual temperature: If a temperature value is wanted, the equation can easily be solved using a microprocessor that uses a digitized value of U R as an input. If only a threshold signal for a maximum temperature is needed, a comparator that triggers at a predefined value is sufficient.. Application Note 8 V1.0,
9 4.1 Dimensioning R 1 for the voltage divider AN Temperature measurement with NTC, digital approach Choosing R 1 needs to be done carefully to achieve a proper reading. If chosen too small, the flowing current inside the NTC will lead to losses that in turn heat up the device thereby falsifying the measured results. If, on the other hand, R 1 is chosen too large, the measured voltage gets too small and in turn the measurement looses accuracy again. To minimize the influence of the current, a thermal view is helpful. The thermal conductivity for the NTC is 145K/W. If a 1K influence is tolerable, the power dissipation inside the NTC may not exceed P max =6.9mW. Assuming that a measurement up to 100 C needs to be done, the NTC will reach a value of R 100 =493Ω. From this, the maximum current can be calculated to be Pmax I max = 3. 74mA R =. With a supply voltage U 1 =5V and a current limit of 3mA, the resistor R 1 becomes 100 U1 = Ω I R. 1 R max As there is no such resistor, 910Ω can be chosen, leading to I max =3.56mA; any value that limits the current to I<4mA can be considered as long as 1K difference is tolerable. 5 Temperature measurement with NTC, digital approach Instead of using a voltage divider, the change of the NTC s resistance over temperature is used to influence the time constant of an R-C-combination, a basic schematic is given in Figure 7. Figure 7 Basic schematic to get a digital temperature information The resistors R 11 and R 12 define the threshold for the comparator to change its output. The signal U out is also used to trigger the transistor Q 1 to discharge the capacitor. As charging of the capacitor is defined by the NTC s resistance R(ϑ), U out becomes a pulse pattern with a frequency f out =g(ϑ). To reconstruct the actual temperature from U out, it is sufficient to count pulses for a well defined period. The number of pulses identifies the temperature; mapping pulses to temperatures can be done using an analytic description or a look-up table with interpolation between the two closest values. Application Note 9 V1.0,
10 Published by Infineon Technologies AG
Application Note, V1.0, 2008 AN2008-03. Thermal equivalent circuit models. replaces AN2001-05. Industrial Power
Application Note, V1.0, 2008 AN2008-03 Thermal equivalent circuit models replaces AN2001-05 Industrial Power Edition 2008-06-16 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies
More informationTLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009
May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon
More informationRGB Wall Washer Using ILD4035
ILD4035 Application Note AN216 Revision: 1.0 Date: RF and Protection Devices Edition Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal
More information6 0 0 V h i g h c u r r e n t H i g h S p e e d 3 I G B T o p t i m i z e d f o r h i g h - s w i t c h i n g s p e e d
6 0 0 V h i g h c u r r e n t H i g h S p e e d 3 I G B T o p t i m i z e d f o r h i g h - s w i t c h i n g s p e e d IFAT IPC APS Giulia Seri Application Engineer Edition 2012-11-02 Published by Infineon
More informationApplication Note, Rev.1.0, September 2008 TLE8366. Application Information. Automotive Power
Application Note, Rev.1.0, September 2008 TLE8366 Automotive Power Table of Contents 1 Abstract...3 2 Introduction...3 3 Dimensioning the Output and Input Filter...4 3.1 Theory...4 3.2 Output Filter Capacitor(s)
More informationPower Management & Supply. Design Note. Version 1.0, Nov. 2001 DN-EVALMF2ICE2A265-1. CoolSET 35W DVD Power Supply with ICE2A265.
Version 1.0, Nov. 2001 Design Note DN-EVALMF2ICE2A265-1 CoolSET 35W DVD Power Supply with ICE2A265 Author: Harald Zöllinger Published by Infineon Technologies AG http://www.infineon.com Power Management
More informationOptiMOS Power-Transistor Product Summary
OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
More informationApplication Note, V 2.2, Nov. 2008 AP32091 TC1766. Design Guideline for TC1766 Microcontroller Board Layout. Microcontrollers. Never stop thinking.
Application Note, V 2.2, Nov. 2008 AP32091 TC1766 Design Guideline for TC1766 Microcontroller Board Layout Microcontrollers Never stop thinking. Edition Published by Infineon Technologies AG 81726 München,
More informationUsing NTC Temperature Sensors Integrated into Power Modules
Using NTC Temperature Sensors Integrated into Power Modules Pierre-Laurent Doumergue R&D Engineer Advanced Power Technology Europe Chemin de Magret 33700 Mérignac, France Introduction Most APTE (Advanced
More informationR e c o m m e n d a t i o n s f o r S c r e w T i g h t e n i n g T o r q u e f o r I G B T D i s c r e t e D e v i c e s
V1.0 December. 2013 R e c o m m e n d a t i o n s f o r S c r e w T i g h t e n i n g T o r q u e f o r I G B T D i s c r e t e D e v i c e s Charles Low Khai Yen, IFMY DC PMM DPC Dr. Christian Kasztelan,
More informationOptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationOptiMOS TM Power-Transistor
Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target
More informationBAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W
BAV7... Silicon Switching Diode For highspeed switching applications Common cathode configuration BAV7S / U: For orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified
More informationTS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption:
Low-power single CMOS timer Description Datasheet - production data The TS555 is a single CMOS timer with very low consumption: Features SO8 (plastic micropackage) Pin connections (top view) (I cc(typ)
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS
More informationFiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V
Fiber Optics Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 Features Bipolar IC with open-collector output Digital output, TTL compatible Sensitive in visible
More informationApplication Note TDx510x
App.Note, V 1.0, Jan 2004 Application Note TDx510x Version 1.0 Wireless Communication Never stop thinking. Edition 2004-01-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München,
More informationOptiMOS 3 Power-Transistor
Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationIDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
More informationIDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 12 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 12 V I F 4 V F 1.65 V T jmax
More informationBAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified
More informationIDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 9 V F 1.65 V T
More informationIDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T
More informationSPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
More informationBAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U
BAS6... Silicon Switching Diode For highspeed switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAS6 BAS6W BAS6L BAS6V BAS6W BAS63W BAS6S BAS6U BAS67L4! $ # " "!,,,!,,!
More informationHow to design SMPS to Pass Common Mode Lightning Surge Test
Application Note, V1.0, September 2006 How to design SMPS to Pass Common Mode Lightning Surge Test Power Management & Supply N e v e r s t o p t h i n k i n g. Edition 2006-09-06 Published by Infineon
More informationAutomotive MOSFETs in Linear Applications: Thermal Instability
Application Note, V1.0, May 2005 Automotive MOSFETs in Linear Applications: Thermal Instability by Peter H. Wilson Automotive Power N e v e r s t o p t h i n k i n g. - 1 - Table of Content 1. Introduction...
More informationJ. S c h o i s wo h l
Linear Mode Operation and Safe Operating Diagram of Power-MOSFETs J. S c h o i s wo h l Application Note V0.92 June 2010 IFNA IMM SMD PMD Published by Infineon Technologies AG 81726 Munich, Germany 2011
More informationO p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n
V2.4. May 2012 O p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n IFAT PMM APS SE DS Mößlacher Christian Guillemant Olivier Edition 2011-02-02 Published by
More informationType Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified
More informationCLA4607-085LF: Surface Mount Limiter Diode
DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold
More informationThe Challenge of Accurately Analyzing Thermal Resistances
The Challenge of Accurately Analyzing Thermal Resistances Nils Kerstin, Infineon Technologies AG, Warstein, Germany, nils.kerstin@infineon.com Martin Schulz, Infineon Technologies AG, Warstein, Germany,martin.schulz@infineon.com
More informationR&D Engineer. equipment. the power
Application Note APT0406 Using NTC Temperature sensor integrated into power module Pierre-Laurent Doumergue R&D Engineer Microsemi Power Module Products 26 rue de Campilleau 33 520 Bruges, France Introduction:
More informationTS321 Low Power Single Operational Amplifier
SOT-25 Pin Definition: 1. Input + 2. Ground 3. Input - 4. Output 5. Vcc General Description The TS321 brings performance and economy to low power systems. With high unity gain frequency and a guaranteed
More informationI n t r o d u c t i o n t o I n f i n e o n s S i m u l a t i o n M o d e l s P o w e r M O S F E T s
I n t r o d u c t i o n t o I n f i n e o n s S i m u l a t i o n M o d e l s P o w e r M O S F E T s IFAT PMM F. Stueckler G. Noebauer K. Bueyuektas Edition 2013-09-16 Published by Infineon Technologies
More informationSilicon Schottky Barrier Diode Bondable Chips and Beam Leads
DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip
More informationUA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
More informationData Sheet, V1.1, May 2008 SMM310. Silicon MEMS Microphone. Small Signal Discretes
Data Sheet, V1.1, May 2008 SMM310 Small Signal Discretes Edition 2008-05-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer
More informationObsolete Product(s) - Obsolete Product(s)
Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
More informationConstant Voltage and Constant Current Controller for Adaptors and Battery Chargers
TECHNICAL DATA Constant Voltage and Constant Current Controller for Adaptors and Battery Chargers IK3051 Description IK3051 is a highly integrated solution for SMPS applications requiring constant voltage
More informationPower Resistor Thick Film Technology
Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES
More informationChapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
More informationSystem Security Solutions for the connected world. www.infineon.com/ccs
System Security Solutions for the connected world www.infineon.com/ccs Solutions for rising security demands The right balance between hardware-based and software-based security mechanisms allows you to
More informationAdvanced Monolithic Systems
Advanced Monolithic Systems FEATURES Three Terminal Adjustable or Fixed oltages* 1.5, 1.8, 2.5, 2.85, 3.3 and 5. Output Current of 1A Operates Down to 1 Dropout Line Regulation:.2% Max. Load Regulation:.4%
More information10 ma LED driver in SOT457
SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457
More informationLM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
More informationOptocoupler, Phototransistor Output, AC Input
Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have
More informationStandard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single
More informationPower Supplies. 1.0 Power Supply Basics. www.learnabout-electronics.org. Module
Module 1 www.learnabout-electronics.org Power Supplies 1.0 Power Supply Basics What you ll learn in Module 1 Section 1.0 Power Supply Basics. Basic functions of a power supply. Safety aspects of working
More informationL6234. Three phase motor driver. Features. Description
Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal
More informationCLA Series: Silicon Limiter Diode Bondable Chips
DATA SHEET CLA Series: Silicon Limiter Diode Bondable Chips Applications LNA receiver protection Commercial and defense radar Features Established Skyworks limiter diode process High-power, mid-range,
More informationS112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor
More informationRevision History: 2003-03 V1.0 Previous Version: Page Subjects (major changes since last revision)
Design Note, V1.0, Mar. 2003 TDA4863 DN-PFC-TDA4863-1 TDA4863 Driving MOSFET with large Capacitances Author: Wolfgang Frank http://www.infineon.com/pfc Power Management & Supply Never stop thinking. Revision
More informationLinear Optocoupler, High Gain Stability, Wide Bandwidth
ishay Semiconductors Linear Optocoupler, High Gain Stability, Wide Bandwidth i9 DESCRIPTION The linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode
More informationDescription. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
More informationOptocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
More informationSMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode
DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High volume wireless systems
More informationObsolete Product(s) - Obsolete Product(s)
32 W hi-fi audio power amplifier Features High output power (50 W music power IEC 268.3 rules) High operating supply voltage (50 V) Single or split supply operations Very low distortion Short-circuit protection
More informationNTC Thermistors, Radial Leaded and Coated
M, C, T NTC Thermistors, Radial Leaded and Coated FEATURES Small size - conformally coated Wide resistance range Available in 11 different R-T curves Available in point matched and curve tracking precision
More informationMOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationMC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution
More informationLM1084 5A Low Dropout Positive Regulators
5A Low Dropout Positive Regulators General Description The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5 at 5A of load current. It has the same pin-out as
More informationCS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE
3.3 /250 ma, 5.0 /100 ma Micropower Low Dropout Regulator with The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 primary output ( OUT1 ) supplies up to 250 ma while
More informationNTE923 & NTE923D Integrated Circuit Precision Voltage Regulator
NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator Description: The NTE923 and NTE923D are voltage regulators designed primarily for series regulator applications. By themselves, these devices
More informationWelcome to this presentation on Driving LEDs Resistors and Linear Drivers, part of OSRAM Opto Semiconductors LED Fundamentals series.
Welcome to this presentation on Driving LEDs Resistors and Linear Drivers, part of OSRAM Opto Semiconductors LED Fundamentals series. In this presentation we will look at: - Simple resistor based current
More informationProgrammable Single-/Dual-/Triple- Tone Gong SAE 800
Programmable Single-/Dual-/Triple- Tone Gong Preliminary Data SAE 800 Bipolar IC Features Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones
More informationPulse Width Modulation Amplifiers EQUIVALENT CIRCUIT DIAGRAM. 200mV + - SMART CONTROLLER .01F OSC Q3. 2200pF
Pulse Width Modulation Amplifiers MSA MSA FEATURES LOW COST HIGH VOLTAGE VOLTS HIGH OUTPUT CURRENT AMPS kw OUTPUT CAPABILITY VARIABLE SWITCHING FREQUEY APPLICATIONS BRUSH MOTOR CONTROL MRI MAGNETIC BEARINGS
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationStandard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
More informationProduct Datasheet P1110 915 MHz RF Powerharvester Receiver
DESCRIPTION The Powercast P1110 Powerharvester receiver is an RF energy harvesting device that converts RF to DC. Housed in a compact SMD package, the P1110 receiver provides RF energy harvesting and power
More informationDAP miniwiggler V3. Application Note. Microcontrollers AP56004 V1.0 2013-07
DAP miniwiggler V3 Application Note V1.0 2013-07 Microcontrollers Edition 2013-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER
More informationLM2901. Low-power quad voltage comparator. Features. Description
Low-power quad voltage comparator Features Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V Very low supply current (1.1 ma) independent of supply voltage
More information5-A H-Bridge for DC-Motor Applications TLE 5205-2
5-A H-Bridge for DC-Motor Applications TE 525-2 Overview. Features Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management applications Operates at supply voltages up to 4 V Very
More informationSmart Highside Power Switch
Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection
More informationOptocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
More informationHow to Read a Datasheet
How to Read a Datasheet Prepared for the WIMS outreach program 5/6/02, D. Grover In order to use a PIC microcontroller, a flip-flop, a photodetector, or practically any electronic device, you need to consult
More informationMC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
More informationLow Voltage, Resistor Programmable Thermostatic Switch AD22105
a Low Voltage, Resistor Programmable Thermostatic Switch AD22105 FEATURES User-Programmable Temperature Setpoint 2.0 C Setpoint Accuracy 4.0 C Preset Hysteresis Wide Supply Range (+2.7 V dc to +7.0 V dc)
More informationLM56 Dual Output Low Power Thermostat
Dual Output Low Power Thermostat General Description The LM56 is a precision low power thermostat. Two stable temperature trip points (V T1 and V T2 ) are generated by dividing down the LM56 1.250V bandgap
More informationBLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
More informationCAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming
A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no
More informationLM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators
Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mv max for
More informationAS2815. 1.5A Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response
1.5A Low Dropout oltage Regulator Adjustable & Fixed Output, Fast Response FEATURES Adjustable Output Down To 1.2 Fixed Output oltages 1.5, 2.5, 3.3, 5.0 Output Current of 1.5A Low Dropout oltage 1.1 Typ.
More informationLM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR
3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage
More informationLM138 LM338 5-Amp Adjustable Regulators
LM138 LM338 5-Amp Adjustable Regulators General Description The LM138 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 5A over a 1 2V to 32V output range
More informationFeatures. Applications
LM555 Timer General Description The LM555 is a highly stable device for generating accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if desired. In the
More informationOLF500: High CMR, High-Speed Logic Gate Hermetic Surface Mount Optocoupler
TM DATA SHEET OLF500: High CMR, High-Speed Logic Gate Hermetic Surface Mount Optocoupler Features Hermetic SMT flat-pack package Electrical parameters guaranteed over 55 C to +125 C ambient temperature
More informationTEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram
Zero Voltage Switch with Fixed Ramp TEA04/ TEA4 Description The monolithic integrated bipolar circuit, TEA04/ TEA4 is a zero voltage switch for triac control in domestic equipments. It offers not only
More informationNE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationAC-DC Converter Application Guidelines
AC-DC Converter Application Guidelines 1. Foreword The following guidelines should be carefully read prior to converter use. Improper use may result in the risk of electric shock, damaging the converter,
More informationNE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
More informationCurrent Limiting Power Resistors for High-Power LED Module Lighting Applications
Current Limiting Power Resistors for High-Power LED Module Lighting Applications PWR263 An ongoing trend toward miniaturization of virtually all electronics is accompanied by the demand for a reduction
More informationOptocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
More informationSmall Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
More informationCS4525 Power Calculator
1. OVERVIEW CS4525 Power Calculator The CS4525 Power Calculator provides many important application-specific performance numbers for the CS4525 based on user-supplied design parameters. The Power Calculator
More informationAAT3520/2/4 MicroPower Microprocessor Reset Circuit
General Description Features PowerManager The AAT3520 series of PowerManager products is part of AnalogicTech's Total Power Management IC (TPMIC ) product family. These microprocessor reset circuits are
More informationADC-20/ADC-24 Terminal Board. User Guide DO117-5
ADC-20/ADC-24 Terminal Board User Guide DO117-5 Issues: 1) 8.11.05 Created by JB. 2) 13.12.05 p10: added 0V connection to thermocouple schematic. 3) 22.3.06 p11: removed C1. 4) 20.8.07 New logo. 5) 29.9.08
More information