Aplicaciones de la nanolitografía de oxidación por AFM

Transcription

1 ForceTool Aplicaciones de la nanolitografía de oxidación por AFM (AFM oxidation nanolithography or Local oxidation nanolithography) Templates for the growth of molecular arquitectures Transistors Sensors for biomolecular recognition Ricardo García,

2 ForceTool AFM oxidation nanolithography R. García,

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4 Template Growth on Nanopatterns FABRICATION OF T6 WIRES 1.5 nm 150ºC 1 m 1 m 1 m 1 m 500 nm FORMATION OF T6 CHANNELS Several microns in length Minimum width ~ 100 nm García et al., Nano Lett. 4, 1115 (2004)

5 Laboratorio de Fuerzas y Túnel Mn12O12(CH3COO)16(H2O)4 1μM Mn12bet Rinsing in CH3 acetonitrile CN acetonitrile 2 nm = 3 min. e Madrid

6 Template Growth of single molecule magnets Mn12 (a) (a) 1 m (b) 500 nm 1 m

7 Template Growth of single-molecule magnets Mn12 Mn12O12(CH3COO)16(H2O)4 (a) 2 nm (b) (c) Collaboration Coronado s group U. Valencia, Spain APTES SiO2 Si

8 Template Growth of single molecule magnets Mn12 : Dependence on deposition time 1 min 2 min 4 min 500 nm 500 nm 500 nm 500 nm Adv. Mater. 19, 291 (2007)

9 Template growth of Tetratiafulvaleno (TTF) onto SiO 2 patterns Before After After 40 nm 100 nm Collaboration C. Rovira, CSIC, Spain

10 ForceTool Masks for nanofabrication 3 nm AFM oxide Si 55 nm SiO2 61 nm Si p-type cm SiO2 Si p-type cm 54 nm silicon nanowires 61 nm Silicon oxide masks AFM SiOx height = 2nm 1 m Width = 45 nm (100) KOH etching 54.7 º (111) 20% wt. KOH etching 14 min 50 ºC Silicon nanowires after KOH etching 1 m Height = 55 nm Width = 120 nm

11 ForceTool Nanofabricación de anillos cuánticos by LON Semiconductores aislados (a) EF Energy AlxGa1- xas VB GaAs ISD (b) ma gn etic fiel d (m T) 500 nm 2DEG Heterounión n-p en equilibrio térmico ISD (pa ) (c) gate voltage (mv) A. Fuhrer et al. Nature 413, 822 (2001)

12 FORCETOOL LAB SILICON NANOWIRE TRANSISTORS SILICON OXIDE AFM ELECTRICAL LOCAL ETCHING OXIDATION CONTACTS Si SiO 2 Si

13 ForceTool Side-gated FET by AFM local oxidation AFM SiOx Au Si Au/Si Au Si 5 m Si I drain(na) Au VD 0 SiO2 KOH VG SiO V drain (V) Wire length = 18 m Si doping cm -3 height = 57 nm width = 45 nm Gate-wire gap = 830 nm +2 V +1 V 0-1 V VG = - 2 V W = 45 nm

14 Nanotransitor based on Si Nanowires Side-gated nt Back-gated nt ForceTool I DS [na] v DS [V] 4 V 3 V 2 V 1 V 0 V

15 FORCETOOL LAB SILICON NANOWIRE TRANSISTORS Complex Si nanowires architectures Two-level Si Nanowires 10 1.(b) µm 1 µm J. Martinez, R.V. Martinez and R. Garcia, Nano Lett. 8, 3636 (2008)

16 ForceTool A very small Si nanowire height [nm] Topography cross-section Au gate nanowire X [nm] Si nanowire width (FWHM)=3 nm height=33 nm R eff ~5 nm Back-gated I-V Characteristics J. Martinez, R.V. Martinez and R. Garcia, Nano Lett. 8, 3636 (2008)

17 ForceTool 1 µm

18 ForceTool Si Nanowires as fast and ultrasensitive sensors Y. Cui,, C.M. Lieber, Science 293, 208 (2001) conductancia d d V G 0 V G 0 tiempo Figura 5. Esquema del dispositivo final y del concepto propuesto en TRANSBIO.

19 tb041 Nanowires and fluidic channels ForceTool fluidic channel barrier Si nanowire Liquid flow channel full channel empty

20 Detection of the Early Stage of Recombinational DNA Repair by Silicon Nanowire Transistors ForceTool RecA: M w = 38 kda, d=27å SsbA: M w = 18.8 kda per subunit RecA forms a polymorphic right handed helix around the DNA with approximately six monomers per helix turn

21 ForceTool microelectrodes channel n-doped SiNW microfluidic cell 50 m 2 m Drain Current (na) Drain Current ( A) dry water buffer Vg=-5V V Vg=-2.5V g RecA Vg=0V RecA+dATP Vg=2.5V RecA+dATP+ssDNA Vg=5V RecA+dATP+ssDNA+SSB Drain Voltage 0.00 (V) Drain Voltage (V) Resistance (MΩ) Resitance=V/I control buffer ssdna water RecA+dATP+ssDNA+SsbA buffer RecA+dATP RecA+dATP+ssDNA

22 ForceTool Changes in the resistance of the SiNW enable the detection of different biomolecular processes. The biomolecular processes involving 300 RecA-ssDNA are detected M. Chiesa et al. (submitted 2011)

23 ForceTool Nanolitografía de oxidación local: Máscaras Moldes Barreras Túnel (dieléctricos) Dispositivos electrónicos a escala nanométrica: sensibles y rápidos R. García,