CR02AM. Lead-Mount, Phase Control SCR 0.3 Amperes/400 Volts ➀ CATHODE ➁ ANODE OUTLINE DRAWING D C CIRCUMSCRIBE CIRCLE F - DIA. CONNECTION DIAGRAM
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1 CR2AM Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) Lead-Mount, Phase Control SCR.3 Amperes/4 Volts OUTLINE DRAWING B B E E ➂ ➁ ➀ A D C Description: The Powerex CR2AM Phase Control SCRs are planar passivated thyristors for use in low power control and rectification. These devices are molded silicone plastic types. CIRCUMSCRIBE CIRCLE F - DIA. Features: Planar Passivation Short Turn-on Time Suitable to Pulse Use CONNECTION DIAGRAM ➀ CATHODE ➁ ANODE ➂ GATE ➂ ➁ ➀ Applications: Phase Control Triggering of High Power Thyristors, Pulse Generators and Counters Static Switch Motor Control Strobe Flasher Outline Drawing (Conforms to JEDEC TO-92) Dimensions Inches Millimeters A.49 Min Min. B.2 Max. 5. Max. C.15 Max. 3.9 Max. D E F.28 Dia..7 Dia. Ordering Information: Example: Select the complete seven digit part number you desire from the table - i.e. CR2AM-8 is a 4 Volt,.3 Ampere Phase Control SCR. V DRM /V RRM Type Volts Code CR2AM 4-8 P-1
2 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) CR2AM.3 Amperes/4 Volts Absolute Maximum Ratings, T a = 25 C unless otherwise specified Ratings Symbol CR2AM-8 Units Repetitive Peak Off-state Voltage V DRM 4 Volts Repetitive Peak Reverse Voltage V RRM 4 Volts Non-repetitive Peak Reverse Voltage V RSM 5 Volts Reverse Voltage V R() 32 Volts Forward Voltage V D() 32 Volts RMS On-state Current I T(RMS).47 Amperes Average On-state Current (Nominal, See Graphs) T a = 3 C I T(avg).3 Amperes Non-repetitive Peak Surge, On-state Current One Cycle (6 Hz) I TSM 1 Amperes I 2 t for Fusing, t = 8.3 msec I 2 t.4 A 2 sec Peak Gate Power Dissipation P GM.1 Watts Average Gate Power Dissipation P G(avg).1 Watts Peak Forward Gate Current I FGM.1 Amperes Peak Forward Gate Voltage V FGM 6 Volts Peak Reverse Gate Voltage V RGM 6 Volts Storage Temperature T stg -4 to 125 C Operating Temperature T j -4 to 125 C Weight.23 Grams P-2
3 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) CR2AM.3 Amperes/4 Volts Electrical and Thermal Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Voltage Blocking State Peak Forward Leakage I DRM T j = 125 C, V D = V DRM.1 ma Peak Reverse Leakage I RRM T j = 125 C, V R = V RRM.1 ma Current Conducting State Peak On-state Voltage V TM T a = 25 C, I TM =.6A 1.6 Volts Holding Current I H V D = 12V,, 3. ma Thermal Resistance, R th(j-a) 18 C/W Junction-to-ambient Gate Parameters Gate Current to Trigger I GT V D = 6V, R L = 6, 1 1 A Gate Voltage to Trigger V GT V D = 6V, R L = 6,.8 Volts Non-triggering Gate Voltage V GD V D = 1/2V DRM,, T j = 125 C.2 Volts I GT, V GT measurement circuit 3V IGS A 3 RGK 1k SWITCH IGT A V 1 VGT A 1 TUT 6 6V SWITCH 1: I GT Measurement SWITCH 2: V GT Measurement (Inner resistance of voltage meter is about 1k) P-3
4 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) CR2AM.3 Amperes/4 Volts INSTANTANEOUS ON-STATE VOLTAGE, V T, (VOLTS) MAXIMUM PEAK SURGE CURRENT, I TSM, (AMPERES) T j = 25 o C MAXIMUM ON-STATE CHARACTERISTICS INSTANTANEOUS ON-STATE CURRENT, I T, (AMPERES) MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS TRANSIENT THERMAL IMPEDANCE, Z th(j-c), ( C/WATT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION-TO-AMBIENT) TIME, t, (s) CYCLES AT 6 Hz AMBIENT TEMPERATURE, T a, ( C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVEFORM) RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION = GATE VOLTAGE, V G, (VOLTS) MAXIMUM POWER DISSIPATION, (WATTS) V FGM = 6V GATE CHARACTERISTICS P G(avg) =.1W V GT =.8V I GT = 1A T j = 25 C V GD =.2V P GM =.1W I FGM =.1A GATE CURRENT, I G, (ma) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE-PHASE HALF WAVEFORM) RESISTIVE, INDUCTIVE LOADS 36 = AMBIENT TEMPERATURE, T a, ( C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVEFORM) RESISTIVE LOADS NATURAL CONVECTION = MAXIMUM POWER DISSIPATION, (WATTS) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE-PHASE FULL WAVEFORM) RESISTIVE LOADS 36 = MAXIMUM ALLOWABLE CASE TEMPERATURE, T C, ( C) MAXIMUM ALLOWABLE CASE TEMPERATURE (RECTANGULAR WAVEFORM) RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION = P-4
5 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) CR2AM.3 Amperes/4 Volts MAXIMUM POWER DISSIPATION, (WATTS) MAXIMUM ON-STATE POWER DISSIPATION (RECTANGULAR WAVEFORM) RESISTIVE, INDUCTIVE LOADS = GATE TRIGGER CURRENT, (t C) GATE TRIGGER CURRENT, (25 C) x 1% A GATE TRIGGER CURRENT I GT = 32A x 1% GATE TRIGGER VOLTAGE, (t C) GATE TRIGGER VOLTAGE, (25 C) GATE TRIGGER VOLTAGE GATE TRIGGER CURRENT 1 2 HOLDING CURRENT 8 HOLDING CURRENT VS. GATE-TO-CATHODE RESISTANCE GATE TRIGGER CURRENT, (t C) GATE TRIGGER CURRENT, (25 C) x 1% DISTRIBUTION TYPICAL EXAMPLE HOLDING CURRENT, I H, (ma) DISTRIBUTION TYPICAL EXAMPLE HOLDING CURRENT, (R GK = rk) x 1% HOLDING CURRENT, () I GT = 12A 5A GATE-TO-CATHODE RESISTANCE, R GK, (k) BREAKOVER VOLTAGE, (t C) BREAKOVER VOLTAGE, (25 C) x 1% BREAKOVER VOLTAGE x 1% BREAKOVER VOLTAGE, (dv/dt = x V/s) BREAKOVER VOLTAGE, (dv/dt = 1V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE I GT = 1A 15A 2 EXPONENTIAL WAVE RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/s) x 1% BREAKOVER VOLTAGE, (R GK = rk) BREAKOVER VOLTAGE, () BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE T j = 125 C GATE TO CATHODE RESISTANCE, R GK,(k) CR2AM P-5
6 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (412) CR2AM.3 Amperes/4 Volts REPETITIVE PEAK REVERSE VOLTAGE, (t C) REPETITIVE PEAK REVERSE VOLTAGE, (25 C) x 1% REPETITIVE PEAK REVERSE VOLTAGE GATE TRIGGER CURRENT, (t w ) GATE TRIGGER CURRENT, () x 1% GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH I GT = 4A 3 A 1 A GATE CURRENT PULSE WIDTH, t w, (s) t w.1 s P-6
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AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
TISP4500H3BJ Overvoltage Protector
*RoHS COMPLINT TISP4500H3BJ BIDIRECTIONL THYRISTOR OVERVOLTGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage... >245 V rms - For Controlled
X02. 1.25 A sensitive gate SCR. Features. Applications. Description. on-state rms current: 1.25 A. repetitive peak off-state voltage: 600 V and 800 V
1.25 sensitive gate SCR Features on-state rms current: 1.25 repetitive peak off-state voltage: 600 V and 800 V G gate triggering current: 50 and 200 µ K pplications ground fault circuit interrupters overvoltage
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
(600 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (00 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are
NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator
NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator Description: The NTE923 and NTE923D are voltage regulators designed primarily for series regulator applications. By themselves, these devices
STPS5L60. Power Schottky rectifier. Description. Features
Power Schottky rectifier Datasheet - production data Description Power Schottky rectifier suited for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage
Standard Recovery Diodes (Hockey PUK), 2100 A
Standard Recovery Diodes (Hockey PUK), 2 A VS-SD10C..K Series DO-200AC (K-PUK) PRODUCT SUMMARY I F(AV) 2 A Package DO-200AC (K-PUK) Circuit configuration Single diode FEATURES Wide current range High voltage
Surface Mount Schottky Barrier
FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types.
SDD 92Z41 Housingless Welding Diode Properties SDD 92Z41 Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 9 244 A I FSM = 6 A V TO =.78 V Applications
S101D01/S101D02 S201D01/S201D02
S1D1/S1D/S1D1/S1D S1D1/S1D S1D1/S1D 1-Pin DIP Type SSR for Low Power Control Features 1. Compact ( 1-pin dual-in-line package type). RMS ON-state current I T : 1.Arms 3. Built-in zero-cross (S1D, S1D ).
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (20 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
LM78XX Series Voltage Regulators
LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
Schematic Mechanical Drawing Derating Curve. Input. Output. Product Catalogue
Input 1 Product Catalogue Single Phase SSR (24VAC) 1 ~ 4 Amps : DC Control, : Triac output 42.5 Series : 1 J/K 3 Input (+) & 4 Input (-) 1 & 2 35.6 25.5 57.75 28. 45. A = 3.2 C/W B = 1. C/W C & D =.5 C/W