LM3045 LM3046 LM3086 Transistor Arrays

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1 LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range They may be used as discrete transistors in conventional circuits however in addition they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching The LM3045 is supplied in a 14-lead cavity dualin-line package rated for operation over the full military temperature range The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range Schematic and Connection Diagram Features December 1994 Two matched pairs of transistors V BE matched g5 mv Input offset current 2 ma max at I C e 1mA Five general purpose monolithic transistors Operation from DC to 120 MHz Wide operating current range Low noise figure 3 2 db typ at 1 khz Full military temperature range (LM3045) Applications b55 C toa125 C General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF Custom designed differential amplifiers Temperature compensated amplifiers LM3045 LM3046 LM3086 Transistor Arrays Dual-In-Line and Small Outline Packages Top View Order Number LM3045J LM3046M LM3046N or LM3086N See NS Package Number J14A M14A or N14A TL H C1995 National Semiconductor Corporation TL H 7950 RRD-B30M115 Printed in U S A

2 Absolute Maximum Ratings (T A e 25 C) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM3045 LM3046 LM3086 Each Total Each Total Units Transistor Package Transistor Package Power Dissipation T A e 25 C mw T A e 25 Cto55 C mw T A l 55 C Derate at 6 67 mw C T A e 25 Cto75 C mw T A l 75 C Derate at 8 mw C Collector to Emitter Voltage V CEO V Collector to Base Voltage V CBO V Collector to Substrate Voltage V CIO (Note 1) V Emitter to Base Voltage V EBO 5 5 V I C ma Operating Temperature Range b55 Ctoa125 C b40 Ctoa85 C Storage Temperature Range b65 Ctoa150 C b65 Ctoa85 C Soldering Information Dual-In-Line Package Soldering (10 Sec ) 260 C 260 C Small Outline Package Vapor Phase (60 Seconds) 215 C Infrared (15 Seconds) 220 C See AN-450 Surface Mounting Methods and Their Effect on Product Reliability for other methods of soldering surface mount devices Electrical Characteristics (T A e 25 C unless otherwise specified) Limits Limits Parameter Conditions LM3045 LM3046 LM3086 Units Min Typ Max Min Typ Max Collector to Base Breakdown Voltage (V (BR)CBO ) I C e 10 ma I E e V Collector to Emitter Breakdown Voltage (V (BR)CEO ) I C e 1 ma I B e V Collector to Substrate Breakdown I C e 10 ma I CI e 0 Voltage (V (BR)CIO ) V Emitter to Base Breakdown Voltage (V (BR)EBO ) I E 10 ma I C e V Collector Cutoff Current (I CBO ) V CB e 10V I E e na Collector Cutoff Current (I CEO ) V CE e 10V I B e ma Static Forward Current Transfer Ratio (Static Beta) (h FE ) V CE e 3V I C e ma I C e 1 ma I C e 10 ma Input Offset Current for Matched ma Pair Q 1 and Q 2 li O1 b I IO2l Base to Emitter Voltage (V BE ) V CE e 3V I E e 1mA V I E e 10 ma Magnitude of Input Offset Voltage for mv Differential Pair lv BE1 b V BE2l Magnitude of Input Offset Voltage for Isolated Transistors lv BE3 b V BE4l lv BE4 b V BE5l mv lv BE5 b V BE3l Temperature Coefficient of Base to Emitter Voltage DV BE b1 9 b1 9 mv C DT J Collector to Emitter Saturation Voltage (V CE(SAT) ) I B e 1 ma I C e 10 ma V Temperature Coefficient of Input Offset Voltage DV mv C DT J Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action 2

3 Electrical Characteristics (Continued) Low Frequency Noise Figure (NF) Parameter Conditions Min Typ Max Units f e 1 khz V CE e 3V I C e 100 ma R S e 1kX LOW FREQUENC SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (h fe ) f e 1 khz V CE e 3V 110 (LM3045 LM3046) I C e 1 ma (LM3086) Short Circuit Input Impednace (h ie ) 3 5 kx Open Circuit Output Impedance (h oe ) 15 6 mmho Open Circuit Reverse Voltage Transfer Ratio (h re ) ADMITTANCE CHARACTERISTICS x10 b4 Forward Transfer Admittance ( fe ) f e 1 MHz V CE e 3V 31 b j 1 5 Input Admittance ( ie ) I C e 1mA 0 3aJ 0 04 Output Admittance ( oe ) Reverse Transfer Admittance ( re ) 0 001aj 0 03 See Curve Gain Bandwidth Product (f T ) V CE e 3V I C e 3 ma Emitter to Base Capacitance (C EB ) V EB e 3V I E e pf Collector to Base Capacitance (C CB ) V CB e 3V I C e pf Collector to Substrate Capacitance (C CI ) V CS e 3V I C e pf Typical Performance Characteristics db Typical Collector To Base Cutoff Current vs Ambient Temperature for Each Transistor Typical Collector To Emitter Cutoff Current vs Ambient Temperature for Each Transistor Typical Static Forward Current-Transfer Ratio and Beta Ratio for Transistors Q 1 and Q 2 vs Emitter Current TL H Typical Input Offset Current for Matched Transistor Pair Q 1 Q 2 vs Typical Static Base To Emitter Voltage Characteristic and Input Offset Voltage for Differential Pair and Paired Isolated Transistors vs Emitter Current TL H

4 Typical Performance Characteristics (Continued) Typical Base To Emitter Voltage Characteristic for Each Transistor vs Ambient Temperature Typical Input Offset Voltage Characteristics for Differential Pair and Paired Isolated Transistors vs Ambient Temperature Typical Noise Figure vs Typical Noise Figure vs Typical Noise Figure vs TL H Typical Normalized Forward Current Transfer Ratio Short Circuit Input Impedance Open Circuit Output Impedance and Open Circuit Reverse Voltage Transfer Ratio vs TL H Typical Forward Transfer Admittance vs Frequency Typical Input Admittance vs Frequency Typical Output Admittance vs Frequency TL H

5 Typical Performance Characteristics (Continued) Typical Reverse Transfer Admittance vs Frequency Typical Gain-Bandwidth Product vs TL H Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number LM3045J NS Package Number J14A 5

6 LM3045 LM3046 LM3086 Transistor Arrays Physical Dimensions inches (millimeters) (Continued) Molded Small Outline Package (M) Order Number LM3046M NS Package Number M14A Molded Dual-In-Line Package (N) Order Number LM3046N or LM3086N NS Package Number N14A LIFE SUPPORT POLIC NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a) are intended for surgical implant support device or system whose failure to perform can into the body or (b) support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness be reasonably expected to result in a significant injury to the user National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd Japan Ltd 1111 West Bardin Road Fax (a49) th Floor Straight Block Tel Arlington TX cnjwge tevm2 nsc com Ocean Centre 5 Canton Rd Fax Tel 1(800) Deutsch Tel (a49) Tsimshatsui Kowloon Fax 1(800) English Tel (a49) Hong Kong Fran ais Tel (a49) Tel (852) Italiano Tel (a49) Fax (852) National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications