Application Note, Rev. 1.0, April Application Note TLE8110EE. External Clamping with the TLE8110EE. By Max Bacher.
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1 , Rev. 1.0, April 2008 Application Note TLE8110EE By Automotive Power
2 1 Abstract Introduction Basic setup and graphical calculation of the clamping energy Calculate clamping energy External Zener diode Application circuit Measurements Conclusion External free wheeling diode Application circuit Measurements Conclusion External resistor Application circuit Measurements Conclusion External resistor with free wheeling diode Application circuit Measurements Conclusion Appendix Table of Figures Revision History Table Example...28 Application Note
3 1 Abstract The objective of this application note is to demonstrate the external clamping behavior of the TLE8110EE with external Zener Diode. The other two possibilities (external free wheeling diode and external free wheeling resistor) are not the focus of this application note - but they are briefly illustrated. The test conditions, the lab setup, the measurements and differences between the methods are described. The clamping energy which can be safely dissipated inside the TLE8110EE is restricted to the energy values given in the data sheet. When there are loads with a higher clamping energy it is necessary to have an external clamping unit. For an overview of the permitted loads for the TLE8110EE, please refer to the relevant section of the data sheet. The TLE8110EE is a member of the Flex family and is a smart 10 channel low-side switch for engine management loads (injectors, solenoids, relays, unipolar stepper motors ). For a more detailed appreciation of the capabilities of the TLE8110EE, please refer to the data sheet. 2 Introduction Note: All measurements in this application note have been undertaken accurately but the results are not guaranteed. This application note can be changed without prior notification Please refer to the official TLE8110EE data sheet for detailed technical descriptions. 2.1 Basic setup and graphical calculation of the clamping energy Figure 1 shows the circuit with the TLE8110EE for the first measurements to declare the internal clamping behavior. The colored marked signals in Figure 1 are plotted in Figure 2. Basic setup (this setup is used as basic setup for all circuits in this application note): Vbat 14 V Vdd 5 V Vcc...5 V R 9 Ohm L 15 mh Channel under test is Ch2 Output current is in the range of 1.55 A The reason to choose this load was that we are able to compare the behaviors from external clamping in a direct way with the TLE8110EE clamping. There are no problems for the TLE8110EE without external clamping with this load. Application Note
4 Vdd Vcc 14V Vbat SPI_CS SPI_CLK TLE8110EE OutI SPI_SI R = 9 Ohm L = 15 mh A MP-Ch3 µc SPI_SO OutV R L InV V MP-Ch2 V MP-Ch1 GND TLE8110EE_Circuit.vsd Figure 1 TLE8110EE connected to a load Figure 2 shows the clamping behavior. The Math Channel (the red one) describes the clamping power and is calculated as channel 2 (output voltage) multiplied by channel 3 (the output current). Temperature: 25 C, Clamping Energy Clamping Voltage: 5 Clamping Voltage: 5 Max. Clamping Power: 84.4W Max. Current: 1.55A Max. Clamping Power: 84.4W Saturation Time: 7.9ms Clamping Time: 0.52ms Clamping Time: 520us Clamping Energy (graphical): 21.9mJ Clamping Energy TLE8110EE, 25 C Energy_25C4ms.emf Clamping Energy TLE8110EE, 25 C, Detail Figure 2 Clamping with inductive and ohmic load to show the clamping energy Energy_25C4ms.emf The clamping energy can be calculated in a graphical way. The approximate clamping energy which is easy to calculate is the area below the dashed blue line marked with dotted blue lines, seen on the right side of Figure 2. When we calculate the energy graphical we get this value: E = 21.94mJ (Max. clamping power * 0.5 * clamping time = 84.4W * 520µs * 0.5). Application Note
5 2.2 Calculate clamping energy There are two well-known equations to calculate the clamping energy for an inductive load. Equation 1 has to be used when there is also an ohmic part for the load. Equation 2 could be used when there is no ohmic part - or the ohmic part is near zero - for the load. Abbreviations for the Equations: V AZ Voltage Active Zener Clamping (for low side switches: V AZ = V DS(CL) ) V DS(CL) Voltage Drain Source during Clamping V bat..battery Voltage I 0 Saturation Current Vbat V R I DS ( CL) L E VDS CL 0 = ( ) ln 1 + I R Vbat V 0 DS ( CL) R Equation 1 For the clamping energy of a low side switch with an ohmic part of the inductive load 1 E = L I V V DS ( CL) DS ( CL) Equation 2 For the clamping energy of a low side switch with no ohmic part of the inductive load V bat For the basic setup - shown in Figure 1 - we calculate with the Equation 1 the clamping energy: E = 19.79mJ. Please be aware: We have to use the Equation 1 because there is an ohmic part for the load. When we calculate with Equation 2 than we get: E = 24.17mJ. An overview about the different possibilities to get a result for the clamping energy: With graphical calculation: E = 21.94mJ With Equation 1: E = 19.79mJ With Equation 2: E = 24.17mJ Application Note
6 3 External Zener diode 3.1 Application circuit Figure 3 shows the circuit of the TLE8110EE with Zener diode for external clamping. The colored marked signals in Figure 3 are plotted in Figure 4 to Figure 15 to have a better overview. Vdd Vcc 14V Vbat SPI_CS OutI SPI_CLK SPI_SI TLE8110EE R = 9 Ohm L = 15 mh DZ = 39V, 3A A MP-Ch3 L µc SPI_SO OutV R InV V MP-Ch2 Zener Diode DZ V MP-Ch1 GND ZDiode_Circuit.vsd Figure 3 TLE8110EE with Zener diode for external clamping Application Note
7 3.2 Measurements Figure 4 to Figure 6 show the clamping behavior with the Zener diode for -40 C. This is the temperature for the TLE8110EE and also for the Zener diode. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. Figure 4 Comparing the clamping voltages for internal and external clamping with Zener diode at - 40 C Temperature: -40 C, Clamping Time Ex. Zener Diode Clamping Voltage: 54V Clamping Voltage: 34.4V Clamping Time: 520us Clamping Time: 880us Clamping TLE8110EE, -40 C TLE8110EE_-40C100us.emf Clamping external Zener Diode, -40 C ZDode_BZG_-40C100us.emf Figure 5 Comparing the clamping time for internal and external clamping with Zener diode at -40 C Application Note
8 Figure 6 Comparing the voltage peak for internal and external clamping with Zener diode at -40 C Figure 7 to Figure 9 show the clamping behavior with the Zener diode for 25 C. This is the temperature for the TLE8110EE and also for the Zener diode. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. Figure 7 Comparing the clamping voltages for internal and external clamping with Zener diode at 25 C Application Note
9 Figure 8 Comparing the clamping time for internal and external clamping with Zener diode at 25 C Figure 9 Comparing the voltage peak for internal and external clamping with Zener diode at 25 C Application Note
10 Figure 10 to Figure 12 show the clamping behavior with the Zener diode for 125 C. This is the temperature for the TLE8110EE and also for the Zener diode. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. Figure 10 Comparing the clamping voltages for internal and external clamping with Zener diode at 125 C Figure 11 Comparing the clamping time for internal and external clamping with Zener diode at 125 C Application Note
11 Figure 12 Comparing the voltage peak for internal and external clamping with Zener diode at 125 C Figure 13 to Figure 15 show the clamping behavior with the Zener diode for 150 C. This is the temperature for the TLE8110EE and also for the Zener diode. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. Figure 13 Comparing the clamping voltages for internal and external clamping with Zener diode at 150 C Application Note
12 Temperature: 150 C, Clamping Time Ex. Zener Diode Clamping Voltage: 54.8V Clamping Voltage: 43.4V Clamping Time: 520us Clamping Time: 675us TLE8110EE_150C100us.emf Clamping TLE8110EE, 150 C Clamping external Zener Diode, 150 C ZDode_BZG_150C100us.emf Figure 14 Comparing the clamping time for internal and external clamping with Zener diode at 150 C Temperature: 150 C, Detail Ex. Zener Diode No Peak at the clamping voltage of 54.8V Peak with 5.6V above the clamping voltage of 43.4V TLE8110EE_150C4us.emf Clamping TLE8110EE, 150 C Clamping external Zener Diode, 150 C ZDode_BZG_150C4us.emf Figure 15 Comparing the voltage peak for internal and external clamping with Zener diode at 150 C 3.3 Conclusion A temperature-dependant behavior for external clamping with a Zener diode can be observed. Figure 16 shows the characteristic curve of the used Zener diode over temperature. Zener voltage increases with temperature, but clamping time decreases. There is always a voltage peak for 1µs with near 5. overvoltage when the clamping with Zener diode starts. The worst behavior with the Zener diode for external clamping is measured at -40 C. With this temperature a clamping voltage in the range of 34.4 Volt is obtained. This voltage could be a problem with load dump when there is no lower load-dump protection such as additional clamping. Also the clamping time at 880µs is much longer than the clamping time of the TLE8110EE which is 520µs. The use of this circuit is, however, not common. The use of a (schottky) diode in series to the Zener diode is highly recommended. With this circuit it is possible to avoid problems with reverse currents just like wrong Application Note
13 polarity with the battery. In case of a reverse current it is possible destroy the Zener diode without the polarity protection of an additional diode. A Zener diode with nominal 3A and 39V was selected to ensure operation is always below the minimum clamping voltage of the TLE8110EE. For the normal operating temperature of 125 C a clamping voltage in the range of 42. is obtained from the 39V Zener diode. With 150 C a clamping voltage in the range of 43.4 Volt is obtained - rather near the minimum clamping voltage for the TLE8110EE. For exact values and thresholds for the clamping voltages of the device, please refer to the data sheet of the TLE8110EE. The maximum clamping voltage of the Zener diode must not reach or exceed the minimum clamping voltage of the TLE8110EE. Calculation and comparison of the possible thresholds of the clamping voltages, to avoid destruction of the TLE8110EE through use of a setup which could reach a higher energy than permitted in the data sheet, is strongly recommended. No distinct temperature-dependant behavior for the TLE8110EE clamping parameters, such as current behavior, clamping time and clamping voltage, was observed. Characteristic curve of the used Zener diode over temperature 1,20E-01 Load Dump Threshold: 40V 1,00E-01 8,00E-02 ID Ampere 6,00E-02 4,00E-02 2,00E-02 0,00E+00 35,1 35,4 35, ,3 36,6 36,9 37,2 37,5 37,8 38,1 38,4 38, ,3 39,6 39,9 40,2 40,5 40,8 41,1 41,4 41, ,3 42,6 42,9 43,2 43,5 43,8 44,1 44,4 44,7-40 C ma 25 C ma 125 C ma 150 C ma -2,00E-02 V D Volt Figure 16 Characteristic curve of the used Zener diode over temperature Application Note
14 4 External free wheeling diode 4.1 Application circuit Figure 17 shows the circuit of the TLE8110EE with FWD (Free Wheeling Diode) for external clamping. The colored marked signals in Figure 17 are plotted in Figure 18 and Figure 19 to have a better overview. Vdd Vcc 14V Vbat SPI_CS SPI_CLK SPI_SI TLE8110EE R = 9 Ohm L = 15 mh FWD = 40V, 3A µc SPI_SO OutV FWD R InV V MP-Ch1 V MP-Ch2 GND Figure 17 TLE8110EE with FWD for external clamping L MP-Ch3 A FWD_Circuit.vsd Application Note
15 4.2 Measurements Figure 18 and Figure 19 show the clamping behavior with the FWD for 25 C. This is the temperature for the TLE8110EE and also for the FWD. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. Figure 18 Comparing the clamping voltages for internal and external clamping with FWD at 25 C Temperature: 25 C, Detail No Peak at the clamping voltage of 5 External FWD Peak with 6,4V above the clamping voltage of 14. Clamping TLE8110EE, 25 C TLE8110EE_25C4us.emf Clamping external FWD, 25 C FWD_25C4us.emf Figure 19 Comparing the voltage peak for internal and external clamping with FWD at 25 C Application Note
16 4.3 Conclusion With FWD the expected behavior was observed. A 3A schottky diode with a maximum repetitive reverse voltage in the range of 40V was used. Figure 20 shows the characteristic curve of this schottky diode for 25 C and from 0 to 1A. The clamping time has increased by an order of magnitude (15 times, to be more exact) compared to TLE8110EE and is now in the same range as the saturation time. However, the clamping voltage is very small. There is always a voltage peak for 1µs with near 6. overvoltage when the clamping with the FWD starts. The use of this circuit is, however, not common. In case of wrong polarity of the battery there could be a large reverse current which could destroy the devices. Characteristic curve of the used schottky diode for 25 C 1, , ,80000 ID Ampere 0,60000 to I A 0, , , ,04 0,08 0,12 0,16 0,2 0,24 0,28 0,32 0,36 0,4 0,44 0,48 0,52 0,56 0,6 0,64 0,68 0,72 0,76 0,8 0,84 0,88 0,92 0,96 1 1,04 1,08 1,12 1,16 1,2 1,24 1,28 1,32 1,36 1,4 1,44 V D Volt Figure 20 Characteristic curve of the used schottky diode Application Note
17 5 External resistor 5.1 Application circuit Figure 21 shows the circuit of the TLE8110EE with parallel resistor (Rp) for external clamping. The colored marked signals in Figure 21 are plotted in Figure 22 to Figure 27 to have a better overview. Vdd Vcc 14V Vbat µc SPI_CS SPI_CLK SPI_SI SPI_SO InV TLE8110EE OutV R = 9 Ohm L = 15 mh Rp: Case A = 19.5 Ohm Case B = 27.2 Ohm R Rp L MP-Ch4 A MP-Ch3 A A MP-Math V MP-Ch1 V MP-Ch2 GND Rp_Circuit.vsd Figure 21 TLE8110EE with parallel resistor for external clamping Application Note
18 5.2 Measurements Figure 22 to Figure 24 show the clamping behavior with parallel resistor of 19.5 Ohm at 25 C. This is the temperature for the TLE8110EE and also for Rp. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. The Math Channel (the red one) describes the current MP-Math in Figure 21 and is calculated as channel 3 (MP-Ch3 the load current) plus channel 4 (MP-Ch4 the Rp current). Figure 22 Comparing the clamping time for internal and external clamping with Rp=19.5Ohm Figure 23 Comparing the currents for internal and external clamping with Rp=19.5Ohm Application Note
19 Figure 24 Comparing the voltage peak for internal and external clamping with Rp=19.5Ohm Figure 25 to Figure 27 show the clamping behavior with parallel resistor of 27.2 Ohm at 25 C. This is the temperature for the TLE8110EE and also for Rp. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. The Math Channel (the red one) describes the current MP-Math in Figure 21 and is calculated as channel 3 (MP-Ch3 the load current) plus channel 4 (MP-Ch4 the Rp current). Rp = 27.2 Ohm, Saturation and Clamping Times, 25 C Clamping Voltage: 5 External Resistor Clamping Voltage: 54V Saturation Time: 7.9ms Clamping Time: 520us Saturation Time: 7.9ms Clamping Time: 2.4ms TLE8110EE_25C4ms.emf Clamping TLE8110EE, 25 C Clamping with Rp, 25 C Rp27.2_25C4ms.emf Figure 25 Comparing the clamping time for intern and external clamping with Rp=27.2Ohm Application Note
20 Figure 26 Comparing the currents for internal and external clamping with Rp=27.2Ohm Figure 27 Comparing the voltage peak for internal and external clamping with Rp=27.2Ohm 5.3 Conclusion The expected behavior with the parallel resistor was observed. The output current for the channel is much higher because there is now the additional current of the parallel resistor. The amount of the additional current depends upon the value of the used parallel resistor and is easy to calculate (IL/Ip=Rp/RL). To observe the effects resulting from the presence of different amounts of parallel resistance, the behavior with two different parallel resistors was measured. Application Note
21 The values of the resistors are chosen: A.) to be under the minimum clamping voltage of the TLE8110EE. Rp=19.5Ohm, which causes a clamping voltage of 43V. B.) to be under the typical clamping voltage of the TLE8110EE. Rp=27.2Ohm, which causes a clamping voltage of 53V. Case A (Rp=19.5Ohm): The clamping time has significantly increased (5.5 times, to be more exact) compared to TLE8110EE. The additional current is in the range of 850mA. A voltage peak for 1µs with near overvoltage when the clamping with the parallel resistor starts, was observed. Case B (Rp=27.2Ohm): The clamping time has significantly increased (4.5 times, to be more exact) compared to TLE8110EE. The additional current is in the range of 500mA. No voltage peak was observed in this case because above 5 the internal clamping from the TLE8110EE is activated. Application Note
22 6 External resistor with free wheeling diode 6.1 Application circuit Figure 28 shows the circuit of the TLE8110EE with parallel resistor (Rp) and FWD for external clamping. The colored marked signals in Figure 28 are plotted in Figure 29 to Figure 34 to have a better overview. µc SPI_CS SPI_CLK SPI_SI SPI_SO InV Vdd TLE8110EE GND Vcc OutV R = 9 Ohm L = 15 mh FWD = 40V, 3A Rp: Case A = 16.8 Ohm Case B = 26.4 Ohm Rp FWD V MP-Ch1 V MP-Ch2 R L 14V MP-Ch4 A MP-Ch3 A A Vbat MP-Math DRp_Circuit.vsd Figure 28 TLE8110EE with FWD and parallel resistor (Rp) for external clamping Application Note
23 6.2 Measurements Figure 29 to Figure 31 show the clamping behavior with parallel resistor of 16.8 Ohm and FWD at 25 C. This is the temperature for the TLE8110EE and also for the Rp and the FWD. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. The Math Channel (the red one) describes the current MP-Math in Figure 28and is calculated as channel 3 (MP-Ch3 the load current) plus channel 4 (MP-Ch4 the FWD-Rp current). Figure 29 Comparing the clamping time for internal and external clamping with FWD and Rp=16.8Ohm Figure 30 Comparing the currents for internal and external clamping with FWD and Rp=16.8Ohm Application Note
24 Figure 31 Comparing the voltage peak for internal and external clamping with FWD and Rp=16.8Ohm Figure 32 to Figure 34 show the clamping behavior with parallel resistor of 26.4 Ohm and FWD at 25 C. This is the temperature for the TLE8110EE and also for the Rp and the FWD. The figures show always the comparisons with the original TLE8110EE clamping. The setup and the load are always the basic setup shown in chapter 2.1. The Math Channel (the red one) describes the current MP-Math in Figure 28and is calculated as channel 3 (MP-Ch3 the load current) plus channel 4 (MP-Ch4 the FWD-Rp current). Figure 32 Comparing the clamping time for internal and external clamping with FWD and Rp=26.4Ohm Application Note
25 Figure 33 Comparing the currents for internal and external clamping with FWD and Rp=26.4Ohm Figure 34 Comparing the voltage peak for internal and external clamping with FWD and Rp=26.4Ohm 6.3 Conclusion The expected behavior with the parallel resistor and the FWD was observed. The big advantage against the external Rp clamping without FWD is that there is now no additional current when the output is switched on. The other effect (longer clamping time) is still apparent. To observe the effects resulting from the presence of different amounts of parallel resistance, the behavior with two different parallel resistors was measured. The values of the resistors are chosen: C.) to be under the minimum clamping voltage of the TLE8110EE. Rp=16.8Ohm, which causes a clamping voltage of 43V. D.) to be under the typical clamping voltage of the TLE8110EE. Rp=26.4Ohm, which causes a clamping voltage of 53V. Application Note
26 Case A (Rp=16.8Ohm): The clamping time has significantly increased (5.5 times, to be more exact) compared to TLE8110EE. A voltage peak for 1µs with near overvoltage when the clamping with the parallel resistor starts, was observed. Case B (Rp=24.4Ohm): The clamping time has significantly increased (4 times, to be more exact) compared to TLE8110EE. No voltage peak was observed in this case because above 5 the internal clamping from the TLE8110EE is activated. Application Note
27 7 Appendix 7.1 Table of Figures Figure 1 TLE8110EE connected to a load...4 Figure 2 Clamping with inductive and ohmic load to show the clamping energy...4 Figure 3 TLE8110EE with Zener diode for external clamping...6 Figure 4 Comparing the clamping voltages for internal and external clamping with Zener diode at -40 C...7 Figure 5 Comparing the clamping time for internal and external clamping with Zener diode at -40 C...7 Figure 6 Comparing the voltage peak for internal and external clamping with Zener diode at -40 C...8 Figure 7 Comparing the clamping voltages for internal and external clamping with Zener diode at 25 C...8 Figure 8 Comparing the clamping time for internal and external clamping with Zener diode at 25 C...9 Figure 9 Comparing the voltage peak for internal and external clamping with Zener diode at 25 C...9 Figure 10 Comparing the clamping voltages for internal and external clamping with Zener diode at 125 C...10 Figure 11 Comparing the clamping time for internal and external clamping with Zener diode at 125 C...10 Figure 12 Comparing the voltage peak for internal and external clamping with Zener diode at 125 C...11 Figure 13 Comparing the clamping voltages for internal and external clamping with Zener diode at 150 C...11 Figure 14 Comparing the clamping time for internal and external clamping with Zener diode at 150 C...12 Figure 15 Comparing the voltage peak for internal and external clamping with Zener diode at 150 C...12 Figure 16 Characteristic curve of the used Zener diode over temperature...13 Figure 17 TLE8110EE with FWD for external clamping...14 Figure 18 Comparing the clamping voltages for internal and external clamping with FWD at 25 C...15 Figure 19 Comparing the voltage peak for internal and external clamping with FWD at 25 C...15 Figure 20 Characteristic curve of the used schottky diode...16 Figure 21 TLE8110EE with parallel resistor for external clamping...17 Figure 22 Comparing the clamping time for internal and external clamping with Rp=19.5Ohm...18 Figure 23 Comparing the currents for internal and external clamping with Rp=19.5Ohm...18 Figure 24 Comparing the voltage peak for internal and external clamping with Rp=19.5Ohm...19 Application Note
28 Figure 25 Comparing the clamping time for intern and external clamping with Rp=27.2Ohm...19 Figure 26 Comparing the currents for internal and external clamping with Rp=27.2Ohm...20 Figure 27 Comparing the voltage peak for internal and external clamping with Rp=27.2Ohm...20 Figure 28 TLE8110EE with FWD and parallel resistor (Rp) for external clamping..22 Figure 29 Comparing the clamping time for internal and external clamping with FWD and Rp=16.8Ohm...23 Figure 30 Comparing the currents for internal and external clamping with FWD and Rp=16.8Ohm...23 Figure 31 Comparing the voltage peak for internal and external clamping with FWD and Rp=16.8Ohm...24 Figure 32 Comparing the clamping time for internal and external clamping with FWD and Rp=26.4Ohm...24 Figure 33 Comparing the currents for internal and external clamping with FWD and Rp=26.4Ohm...25 Figure 34 Comparing the voltage peak for internal and external clamping with FWD and Rp=26.4Ohm Revision History Table Example Previous Version: Page none Subjects (major changes since last revision) Application Note
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