NPN-Si-Fototransistor mit V λ Charakteristik Silicon NPN Phototransistor with V λ Characteristics Lead (Pb) Free Product - RoHS Compliant SFH 3410
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1 NPN-Si-Fototransistor mit V λ Charakteristik Silicon NPN Phototransistor with V λ Characteristics Lead (Pb) Free Product - RoHS Compliant SFH 341 Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 35 nm bis 97 nm Angepaßt an die Augenempfindlichkeit (V λ ) SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten Nur gegurtet lieferbar Anwendungen Umgebungslicht-Detektor Beleuchtungsmesser Dimmungssensor für Hintergrundbeleuchtung Messen/Steuern/Regeln Features Especially suitable for applications from 35 nm to 97 nm Adapted to human eye sensitivity (V λ ) SMT package without base connection, suitable for vapor phase and IR reflow soldering Only available on tape and reel Applications Ambient light detector Exposure meter for daylight and artificial light Sensor for Backlight-Dimming For control and drive circuits Typ Type SFH 341 SFH 341-1/2 SFH 341-2/3 SFH 341-3/4 Bestellnummer Ordering Code Q6511A1211 Q6511A2653 Q6511A2654 Q6511A2655 Fotostrom E v = 2 lx, Standard light A, V CE = 5 V Ipce (µa) >
2 SFH 341 Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Emitter-Kollektorspannung Emitter-collector voltage Wert Value T op ; T stg C V CE 5.5 V I C 2 ma V EC.5 V Einheit Unit Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, V CE = V, f = 1 MHz, E = Capacitance Dunkelstrom Dark current V R = 5 V Fotostrom E v = 2 lx, Normlicht/standard light A, V CE = 5 V Wert Value λ Smax 57 nm λ nm Einheit Unit A.29 mm 2 L B L W mm mm ϕ ± 6 Grad. deg. C CE 16 pf I CEO 3 (< 5) na I PCE >3.2 µa
3 SFH 341 Bezeichnung Parameter Fotostrom E v = 2 lx, Normlicht/standard light A V CE = 5 V Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = I 1) PCEmin.3, E V = 2 lx Wert Value I PCE µa V CEsat mv Einheit Unit 1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) I PCEmin is the min. photocurrent of the specified group Directional Characteristics S rel = f (ϕ) ϕ 1. OHF
4 SFH 341 Relative Spectral Sensitivity S rel = f (λ) I PCE = f (E V ), V CE = 5 V Collector-Emitter Capacitance C CE = f (V CE ) S rel 1 % OHF851 I PCE 1 µa 1 OHF852 C CE 4. pf V λ nm 11 λ Collector-Emitter Current I CE = f (V CE ; E V ) I CE 8 µ A lx 1 lx OHF lx 1 E V I PCE /I PCE(25 C) = f (T A ) E v = 2 lx, V CE = 1 V 5 V I 1.8 PCE I PCE (25 C) OHF E-3 1E-2 1E-1 1E+ 1E+1 1E+2 V V CE 1 2 lx V C 9 V CE T A
5 SFH 341 Maßzeichnung Package Outlines 1.15 (.45).95 (.37) Chip position.3 (.12).2 (.8) 4.8 (.189) 4.4 (.173) Active area.29 mm 2.6 (.24).2 (.8).1 (.4). (.) (not connected).5 (.2).3 (.12) 1.1 (.43).9 (.35) 2.1 (.83) 1.9 (.75).8 (.31).6 (.24).6 (.24).2 (.8) 2.7 (.16) 2.5 (.98) Collector Emitter GEOY628 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)
6 SFH 341 Lötbedingungen Vorbehandlung nach JEDEC Level 4 Soldering Conditions Preconditioning acc. to JEDEC Level 4 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C Ramp Up 3 K/s (max) 25 C 12 s max 1 s max Ramp Down 6 K/s (max) min. condition for IR Reflow Soldering: solder point temperature 235 C for at least 1 sec s 3 t Empfohlenes Lötpaddesign Recommended Solderpad Design Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation OHF2393 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)
7 SFH 341 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered
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