Gehäusefarbe Color of Package. diffused. diffused. diffused. diffused. Semiconductor Group
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1 LED 5mm 2.5 mm, Partly Diffused Besondere Merkmale eingefärbtes, teildiffuses Gehäuse als optischer Indikator in Frontplatte einsetzbar Lötspieße ohne Aufsetzebene Bargraphanzeige gegurtet lieferbar Störimpulsfest nach DIN Features colored, partly package for use as optical indicator in frontpanel solder leads without stand-off Bargraph displays available taped on reel load dump resistance acc. to DIN Typ Type LR B480-BD LR B480-C LR B480-D LR B480-CE LS B480-EH LS B480-G LS B480-H LS B480-GK LY B480-EH LY B480-G LY B480-H LY B480-J LY B480-GK -EH -G -H -GK Emissionsfarbe Color of Emission red super-red yellow green Gehäusefarbe Color of Package red, partly red, partly yellow, partly green, partly Lichtstärke Luminous Intensity I V (mcd) Streuung der Lichtstärke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Bestellnummer Ordering Code Q62703-Q1464 Q62703-Q1465 Q62703-Q2648 Q62703-Q3841 Q62703-Q1466 Q62703-Q1467 Q62703-Q1468 Q62703-Q1469 Q62703-Q1470 Q62703-Q1471 Q62703-Q2006 Q62703-Q1473 Q62703-Q2007 Q62703-Q1477 Q62703-Q1870 Q62703-Q2025 Q62703-Q2026 VEX06719 Semiconductor Group
2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom Forward current Stoßstrom Surge current t 10 µs, D = Sperrspannung Reverse voltage Verlustleistung Power dissipation T A 25 C Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Werte Values LR LS, LY, LG T op C T stg C T j C I F ma I FM 0.5 A V R 5 V Einheit Unit P tot mw R th JA 400 K/W Semiconductor Group 2
3 Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Werte Values Einheit Unit LR LS LY LG Wellenlänge des emittierten Lichtes λ peak nm Wavelength at peak emission Dominantwellenlänge λ dom nm Dominant wavelength Spektrale Bandbreite bei 50 % I rel max λ nm Spectral bandwidth at 50 % I rel max Abstrahlwinkel bei 50 % I V (Vollwinkel) Viewing angle at 50 % I V 2ϕ Grad deg. Durchlaßspannung Forward voltage Sperrstrom Reverse current V R = 5 V Kapazität Capacitance V R = 0 V, f = 1 MHz Schaltzeiten: Switching times: I V from 10 % to 90 % I V from 90 % to 10 % I F = 100 ma, t P = 10 µs, R L = 50 Ω (max.) (max.) V F 1.6 V F 2.0 I R 0.01 I R V V µa µa C pf t r 120 t f ns ns Semiconductor Group 3
4 Relative spektrale Emission I rel = f (λ), T A = 25 C, Relative spectral emission V (λ) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik I rel = f (ϕ) Radiation characteristic Semiconductor Group 4
5 Durchlaßstrom I F = f (V F ) Forward current T A = 25 C Relative Lichtstärke I V /I V(10 ma) = f (I F ) Relative luminous intensity T A = 25 C Zulässige Impulsbelastbarkeit I F = f (t P ) Permissible pulse handling capability Duty cycle D = parameter, T A = 25 C LS, LY, LG Zulässige Impulsbelastbarkeit I F = f (t P ) Permissible pulse handling capability Duty cycle D = parameter, T A = 25 C LR Semiconductor Group 5
6 Maximal zulässiger Durchlaßstrom Max. permissible forward current I F = f (T A ) Wellenlänge der Strahlung λ peak = f (T A ) Wavelength at peak emission Dominantwellenlänge λ dom = f (T A ) Dominant wavelength Durchlaßspannung V F = f (T A ) Forward voltage Semiconductor Group 6
7 Relative Lichtstärke I V /I V(25 C) = f (T A ) Relative luminous intensity Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) GEX06719 Kathodenkennzeichnung: Cathode mark: Kürzerer Lötspieß Short solder lead Semiconductor Group 7
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