NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 309 SFH 309 FA

Transcription

1 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 39 SFH 39 FA SFH 39 SFH 39 FA Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 38 nm bis 118 nm (SFH 39) und bei 88 nm (SFH 39 FA) Hohe Linearität 3 mm-plastikbauform im LED-Gehäuse Gruppiert lieferbar Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 38 nm to 118 nm (SFH 39) and of 88 nm (SFH 39 FA) High linearity 3 mm LED plastic package Available in groups Applications Photointerrupters Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Typ Type Bestellnummer Ordering Codes SFH 39 Q6272P859 SFH 39 FA Q6272-P941 SFH 39-3/4 Q6272P3592 SFH 39 FA-3/4 Q6272-P359 SFH 39-4 Q6272P998 SFH 39 FA-4 Q6272-P178 SFH 39-4/5 Q6272P3593 SFH 39 FA-4/5 Q6272-P3591 SFH 39-5 Q6272P999 SFH 39 FA-5 Q6272-P18 SFH 39-5/6 Q6272P3594 SFH 39 FA-5/6 Q6272-P

2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 1 μs Collector surge current Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg C V CE 35 V I C 15 ma I CS 75 ma Einheit Unit P tot 165 mw R thja 45 K/W

3 Kennwerte (T A = 25 C, λ = 95 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche ( 22 μm) Radiant sensitive area Abmessungen der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität, V CE = V, f = 1 MHz, E = Capacitance Dunkelstrom Dark current V CE = 25 V, E = SFH 39 Wert Value SFH 39 FA λ S max 86 9 nm λ nm Einheit Unit A mm 2 L B mm mm L W H mm ϕ ± 12 ± 12 Grad deg. C CE pf I CEO 1 ( 2) 1 ( 2) na

4 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 95 nm E e =.5 mw/cm 2, V CE = 5 V SFH 39: E v = 1 Ix, Normlicht/ standard light A, V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1 ma, V CC = 5 V, R L = 1 kω Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage I C = I PCEmin 1).3, E e =.5 mw/cm 2 I PCE I PCE Wert Value ) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) I PCEmin is the min. photocurrent of the specified group t r, t f μs Einheit Unit ma ma V CEsat mv Directional Characteristics S rel = f (ϕ)

5 Relative Spectral Sensitivity, SFH 39 S rel = f (λ) 1 OHF1121 Relative Spectral Sensitivity, SFH 39 FA S rel = f (λ) I PCE = f (E e ), V CE = 5 V S rel % nm 12 λ Total Power Dissipation P tot = f (T A ) I PCE = f (V CE ), E e = Parameter Dark Current I CEO = f (V CE ), E = Ι 1 1 na CEO OHF Dark Current I CEO = f (T A ), V CE = 25 V, E = Ι 1 3 na CEO OHF153 Capacitance C CE = f (V CE ), f = 1 MHz, E = 5. C CE pf OHF V 35 V CE I PCE /I PCE25 = f (T A ), V CE = 5 V 1.6 Ι PCE Ι PCE OHF C 1 TA V 1 2 V CE C 1 TA

6 Maßzeichnung Package Outlines 2.54 (.1) spacing Collector (Transistor) Cathode (Diode).7 (.28).4 (.16).8 (.31).4 (.16) 3.5 (.138) 1.8 (.71) 1.2 (.47) 29 (1.142) 27 (1.63) Area not flat 5.2 (.25) 4.5 (.177) 4.1 (.161) 3.9 (.154) ø3.1 (.122) ø2.9 (.114) Chip position 6.3 (.248) 5.9 (.232).6 (.24).4 (.16) 4. (.157) 3.6 (.142) GEOY6653 Maße in mm (inch) / Dimensions in mm (inch)

7 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s 1 1 C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered