Planar Magnetron Sputtering Sources

Transcription

1 Planar Magnetron puttering ources

2 INTRODUCTION TABLE OF CONTENT PAGE Introduction MAK MAK MAK MAK MAK MAK Multi ource Options ubstrate Heater Planar Magnetron puttering U Inc., an Jose, CA U..A FX: THE COMPANY U Inc., was established in 1976 and located in the heart of ilicon Valley. This location provides cooperative design, test, and thin film application for product advancements, with well known universities and national laboratories. ince the early 1980 s exclusive licenses from two prominent ilicon Valley laboratories have been granted to U Inc., permitting the manufacture and distribution of patented Planar Magnetron putter ources. With over 6,000 sources delivered throughout the world, U Inc. has become known world wide as a leading supplier of sputter deposition sources. THE PRODUCT The MAK source, U Inc. s successor to the highly regarded U GUN, is produced at the company s an Jose, California U..A. facility. Introduction of the MAK was in late 1995 and it s rapid sales growth caused the discontinuation of the U GUN at the beginning of Designed to present the smallest profile possible, with higher rates than any comparable sputter sources available, MAK users have developed much of today s thin film techniques. BENEFIT OF THE TANDARD MAK PUTTER OURCE Only this unique Planar Magnetron can provide ALL these Advantages Cathode and magnets are IOLATED FROM WATER Design requires only ONE vacuum seal upplied as either HV or UHV NO water to Vacuum seal putters MAGNETIC MATERIAL Target requires NO CLAMPING or BONDING to cathode Operates in DC or RF power modes putters from mtorr Ar. Adjustable anode, PREVENT build up and shadowing 2 U Inc

3 1.3 MAK ø FIXED ANODE ø TANDARD (CUTOM LENGTH AVAILABLE) 1.3 MAK TECHNICAL DATA PART # L130A01 ource Dimensions 1.3 MAK Vertical ize 4.45 Outside Diameter 1.50 Mounting Flange Feedthrough CF (min) 0.75 Quick Coupler Target pecifications Target Diameter 1.3 Target Thickness [MAX] Target Mounting Magnetic Magnetic Materials Yes Magnet Design Type Nd/Fe B Configuration Balanced Operation pecifications DC Max Power 350W RF Max Power 200W Cathode Voltage (Volts) V Discharge Current (Max amps) 1.00 amp Operating Pressure (mtorr) Cooling Water Flow Rate 0.6 gpm Conductivity No Requirement HN CONNECTOR 1.3 MAK typical rates and uniformity performance Working Distance Rate A/min Uniformity 2 Dia. 3 Dia ±7% ±20% ±5% ±12% 1.3 Diameter Thick Cu Target mtorr A N G T R O M MAK Working distance " 1" 0 1" 1.5" INCHE Part # L130A01 U Inc

4 2 MAK 3.91 ø0.75 ø2.33 ANODE HEIGHT ADJUTABLE TO TARGET THICKNE ø TANDARD (CUTOM LENGTH AVAILABLE) 2 MAK TECHNICAL DATA PART # L200A01 ource Dimensions 2 MAK Vertical ize 3.95 Outside Diameter 2.33 Mounting Flange Feedthrough CF (min) 0.75 Quick Coupler Target pecifications Target Diameter 2 Target Thickness [MAX] Target Mounting Magnetic Magnetic Materials Yes Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation pecifications DC Max Power 1000W RF Max Power 400W Cathode Voltage (Volts) V Discharge Current (Max amps) 3 amp Operating Pressure (mtorr) Cooling Water Flow Rate 0.8 gpm Conductivity No Requirement HN CONNECTOR 2 MAK typical rates and uniformity performance Working Distance Rate A/min Uniformity 2 Dia. 3 Dia ±6% ±16% ±3% ±10% 2 Diameter Thick Cu Target mtorr A N G T R O M MAK Working distance " 1" 0 1" 1.5" INCHE Part # L200A01 4 U Inc

5 3 MAK 4.35 ø ø2.25 ANODE HEIGHT ADJUTABLE TO TARGET THICKNE 12.0 TANDARD (CUTOM LENGTH AVAILABLE) 3 MAK TECHNICAL DATA PART # L300A01 ource Dimensions 3 MAK Vertical ize 4.35 Outside Diameter 3.38 Mounting Flange Feedthrough 6 CF (min) 0.75 Quick Coupler Target pecifications Target Diameter 3 Target Thickness [MAX] Target Mounting Magnetic Magnetic Materials Yes Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation pecifications DC Max Power 2000W RF Max Power 750W Cathode Voltage (Volts) V Discharge Current (Max amps) 5 amp Operating Pressure (mtorr) Cooling Water Flow Rate 0.8 gpm Conductivity No Requirement HN CONNECTOR 3 MAK typical rates and uniformity performance Working Distance Rate A/min Uniformity 2 Dia. 4 Dia. 3 10,000 ±5% ±15% ±3% ±10% 3 Diameter Thick Cu Target mtorr A N G T R O M MAK Working distance , " 1" 0 1" 2" INCHE Part # L300A01-CF U Inc

6 4 MAK MAK TECHNICAL DATA PART # L400A ø2.25 ø0.75 ANODE HEIGHT ADJUTABLE TO TARGET THICKNE 12.0 TANDARD (CUTOM LENGTH AVAILABLE) ource Dimensions 4 MAK Vertical ize 4.60 Outside Diameter 4.45 Mounting Flange Feedthrough 8 CF (min) 0.75 Quick Coupler Target pecifications Target Diameter 4 Target Thickness [MAX] Target Mounting Magnetic Magnetic Materials Yes Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation pecifications DC Max Power 3000W RF Max Power 1200W Cathode Voltage (Volts) V Discharge Current (Max amps) 7 amp Operating Pressure (mtorr) Cooling Water Flow Rate 1.0 gpm Conductivity No Requirement HN CONNECTOR 4 MAK typical rates and uniformity performance Working Distance Rate A/min Uniformity 3 Dia. 4 Dia ±5% ±7% ±2% ±3% 4 Diameter Thick Cu Target mtorr A N G T R O M MAK Working distance " 1.5" 0 1.5" 2" INCHE Part # L400A01 6 U Inc

7 6 MAK MAK TECHNICAL DATA PART # L600A ø4.50 ø1.25 ANODE HEIGHT ADJUTABLE TO TARGET THICKNE 12.0 TANDARD (CUTOM LENGTH AVAILABLE) ource Dimensions 6 MAK Vertical ize 6.75 Outside Diameter 6.55 Mounting Flange Feedthrough 10 CF (min) Quick Coupler Target pecifications Target Diameter 6 Target Thickness [MAX] 1.00 Target Mounting Magnetic Magnetic Materials Yes Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation pecifications DC Max Power 6000W RF Max Power 2000W Cathode Voltage (Volts) V Discharge Current (Max amps) 10 amp Operating Pressure (mtorr) Cooling Water Flow Rate 2.0 gpm Conductivity No Requirement HN CONNECTOR 6 MAK typical rates and uniformity performance Working Distance Rate A/min Uniformity 4 Dia. 6 Dia. 4 13,000 ±4% ±12% ±2% ±7% 6 Diameter Thick Cu Target mtorr A N G T R O M MAK Working distance ,200 10, , , , " 2" 0 2" 3" INCHE Part # L600A01 U Inc

8 MAK MULTI OURCE Provides simultaneous and/or sequential deposition Multi-ource assemblies in groups of 3, 4, or 5 Available on 8-24 CF, IO, or ANI Custom designs hutters, shielding and gas injection available 10 CF DEIGN EXAMPLE MAK ON 10 CF W/HUTTER 4-3 MAK ON 16.5 CF W/HUTTER RELATIVE TARGET/HUTTER IN CLOED POITION 1.3 MAK GUN 3 PLC C C ROTARY MOTION 3 PLC 1 of 4 HUTTER IN OPEN POITION ROTATED 49 TO OPEN CUT-AWAY AT GUN LOCATION CHAMBER REF FOCAL POINT 8 U Inc

9 MAK OPTION MAK FLEX MOUNT The flex mount feedthru allows for angular adjustment to the MAK s sputtering attitude. Use of a welded formed bellows and special support bracket, any angle from 0 to 30 degrees is firmly held in place. Power is applied thru a coaxial cable; thus assuring R.F continuity VIEW ROTATED TANDARD (CUTOM LENGTH AVAILABLE) Part # L200A01-FM INITU LINEAR MOTION Provides target to substrate distance change without breaking vacuum. Adaptable to 1.3 thru 4 MAK 1-6 Linear Travel Welded Bellows Bakeable to 120 C UHV Compatible 8 CF CF BELLOW ø QUICK COUPLE FOR UPPORT ONLY 6 EXTENION MAGNET ARRAY PERFORMANCE ADAPTABILITY The single piece cathode assembly permits change of the magnetic structure without disassembly of the MAK. Performance requirements from excellent uniformity, with good target utilization to high rates, with maximum target thickness is achieved. The magnetic array is field changeable. MAGNETIC MATERIAL PUTTERING Direct attachment to the active cathode, without use of a magnetic housing, provides a small free space between target and magnets. This places a stronger magnetic flux at the target surface allowing sputtering of magnetic material as standard. TARGET CATHODE (COOLING URFACE) KEEPER MAGNET ANODE 2 MAK OURCE U Inc

10 UBTRATE HEATER Part # U-300 ACCEORIE PECIFICATION P/N U200 P/N U300 2 Heater 3 Heater 1. Maximum Temperature 950 C 950 C 2. Temperature tability ±2% ±2% 3. Temperature Uniformity ±4 C ±8 C (center circle diameter) Maximum Voltage 60 volts 90 volts 5. Maximum Current 10 amps 9 amps 6. Heater Resistance 5 ohms 10 ohms 7. Power upply AC/DC AC/DC 8. Ramp Time to 750 C 4 Min 5 Min. 9. Ramp Time to 950 C 12 Min. 13 Min. 10. Cool-down Time 35 Min. 45 Min. (950 to room temp., 1 atm pressure) 11. UHV Compatibility Yes Yes 12. Electrical Biasing Yes Yes Deluxe Feedthru and Mounting tand Adjustable Mounting Bracket with X, Y, Z Movement Two (2) Type Thermocouple Leads Two (2) Power Pins Mounted on a 2 3 /4, 4 1 /2 or 6 Rotatable CF Mounting tand Adjustable Mounting Bracket with X, Y, Z Movement Mounted on a 2 3 /4, 4 1 /2 or 6 Rotatable CF 18 Inch Hook-Up Kit Type Thermocouple 18 Leadwire w/ceramics Two.050 OFHC Copper Power Leads 18 Long w/ceramics 4 NON-CONTACT HEATER FEATURE Unprecedented temperature uniformity For use in sputtering, laser ablation, ion beam deposition, ECR, MOCVD and others Part # U400-C 10 U Inc

11 PLANAR MAGNETRON PUTTERING PUTTERING puttering is a method of depositing both thin metal films and insulators onto a substrate. Unlike evaporation, the material to be sputtered does not have to be heated. The deposition of alloys and insulators as composite materials are two important benefits of sputtering. puttering has additional benefits as a deposition technique when compared with evaporation. Ions Electrons Target Atoms Argon Atoms "B" Field "E" Field Target(Cathode) Negative High Voltage PRINCIPLE OF PUTTERING puttering is a physical process that can be compared to throwing steel balls at a concrete wall. Upon impact, the ball tears away fragments of the concrete, resulting in fragments which retain the chemical and physical properties of concrete. If the process is continued, surfaces in the vicinity of the impact are covered with a layer of concrete dust. In sputtering, the steel balls are ionized atoms. The wall is a plate of the material to be sputtered, called a target.the sputtering process takes place in an evacuated chamber. Argon is introduced, then Growing Film Legend Material Removed By Ion Bombardment Magnetic Field Lines Captured Electrons ionized in the chamber which contains the substrate and the target of the film material to be sputtered. The target is maintained at a negative potential relative to the positively charged argon atom. The positive ion accelerates towards the negative charge, striking the target with sufficient force to remove material. The argon atom does not become imbedded in the target. It slams into it like a steel ball into the wall and tears off some of the target material. ince the chamber is maintained at a vacuum, the liberated material settles on everything in the chamber, mainly the substrates. MAGNETRON PUTTERING In diode sputtering, not all of the electrons escaping the target contribute to the ionized plasma glow area. The wasted electrons fly around the chamber causing radiation and other problems, for example, the heating of the target. A magnetron sputtering source addresses the electron problem by placing magnets behind, and sometimes, at the sides of the target. These magnets capture the escaping electrons and confine them to the immediate vicinity of the target. The ion current (density of ionized argon atoms hitting the target) is increased by an order of magnitude over conventional diode sputtering systems, resulting in faster deposition rates at lower pressure. The lower pressure in the chamber helps create a cleaner film. Target temperature is lower with magnetron sputtering enhancing the deposition of high quality films. Relative puttering Rates Table Maximum temperature 950 C O2 compatible UHV compatible Ag 2.16 C 0.05 Mo 0.53 Ta 0.43 Al 0.73 Cr 0.60 Ni 0.65 Ti 0.38 Al Cu 1.00 i 0.39 Zr 0.65 Au 1.76 Mg 0.26 io W 0.39 U Inc

12 MANUFACTURING WITH PRIDE IN THE U..A. WORLD WIDE REPREENTATION 6280 an Ignacio Ave., uite E an Jose, CA PH: FX: tfp@us-incorp.com