SLD8S Series RoHS Pb e3

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SLD8S Series RoHS Pb e3 Description The SLD8S Series is SMTO-263 packaged with leaded modification and is designed to provide precision overvoltage protection for sensitive electronics. Features Agency Approvals AGENCY AGENCY FILE NUMBER E230531 Maximum Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted Parameter Symbol Value Unit Peak Pulse Power Dissipation 1. 10ms x 150ms test waveform P PPM 2200 W 2. 10µs x 1000µs test waveform 7000 W Power dissipation on infinite heatsink at T C = 25 C Maximum Instantaneous Forward Voltage at 100A for Unidirectional only Peak forward surge current 8.3m single half sine-wave Operating Junction and Storage Temperature Range P D 8.0 W V F 1.8 V I FSM 1000 A T J, T STG -55 to 175 C AEC-Q101 qualified SMTO-263 package, and foot print is compatible to industrial popular DO- 218AB package Meet ISO7637-2 5a/5b protection and ISO16750 load dump test (refer to APP note for details V BR @ T J = V BR @25 C x (1+αT x (T J - 25 (αt:temperature Coefficient, typical value is 0.1% Glass passivated chip junction in modified TO- 263 package IEC-61000-4-2 ESD 30kV(Air, 30kV (Contact ESD protection of data lines in accordance with IEC 61000-4-2 EFT protection of data lines in accordance with IEC 61000-4-4 Fast response time: typically less than 1.0ps from 0 Volts to BV min Excellent clamping capability Low incremental surge resistance Plastic package is flammability rated V-0 per Underwriters Laboratories Meet MSL level 1, per J-STD-020, LF maximun peak of 260 C For surface mounted applications to optimize board space Low profile package High temperature to reflow soldering guaranteed: 260 C/10sec at terminals Matte tin lead free plated Halogen free and RoHS compliant Pb-free E3 means 2nd level interconnect is Pbfree and the terminal finish material is tin (Sn (IPC/ JEDEC J-STD-609A.01 Typical Thermal Resistance Junction to case R θjc 0.9 C/W Functional Diagram Bi-directional Applications Designed to protect sensitive electronics from: Cathode Uni-directional Anode - Inductive Load Switching - Alternator Load Dump

Electrical Characteristics (T A =25 C unless otherwise noted Part Number (Uni Breakdown Voltage V BR @ I T (V MIN MAX Test Current I T (ma Reverse Stand off Voltage V R (Volts Maximum Reverse Leakage I R @ V R (µa T J =150 O C Max. Reverse Leakage I R @ V R (µa Maximum Peak Pulse Surge Current I pp (A Maximum Clamping Voltage V C @ I PP (V SLD8S12A 13.3 14.7 5.0 12 10 50 352 19.9 X SLD8S13A 14.4 15.9 5.0 13 10 50 326 21.5 X SLD8S14A 15.6 17.2 5.0 14 10 50 301 23.2 X SLD8S15A 16.7 18.5 5.0 15 10 50 286 24.4 X SLD8S16A 17.8 19.7 5.0 16 2.0 50 269 26.0 X SLD8S17A 18.9 20.9 5.0 17 2.0 50 253 27.6 X SLD8S18A 20.0 22.1 5.0 18 2.0 50 240 29.2 X SLD8S20A 22.2 24.5 5.0 20 2.0 50 216 32.4 X SLD8S22A 24.4 26.9 5.0 22 2.0 50 197 35.5 X SLD8S24A 26.7 29.5 5.0 24 2.0 50 180 38.9 X SLD8S26A 28.9 31.9 5.0 26 2.0 50 167 42.1 X SLD8S27A 29.9 33.1 5.0 27 2.0 50 160 43.6 X SLD8S28A 31.1 34.4 5.0 28 2.0 50 154 45.4 X SLD8S30A 33.3 36.8 5.0 30 2.0 50 144 48.4 X SLD8S33A 36.7 40.6 5.0 33 2.0 50 132 53.3 X SLD8S36A 40.0 44.2 5.0 36 2.0 50 121 58.1 X SLD8S40A 44.4 49.1 5.0 40 2.0 50 108 64.5 X SLD8S43A 47.8 52.8 5.0 43 2.0 50 101 69.4 X SLD8S48A 53.3 58.9 5.0 48 2.0 50 89.7 77.4 X SLD8S57A 63.8 69.9 5.0 57 2.0 50 75.5 92.7 X Notes: 1. V BR measured after I T applied for 300µs, I T = square wave pulse or equivalent. 2. Surge current waveform per 10μs x 1000μs exponential wave and derated per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE C62.35. Agency Approval Load Dump Test Wave Form Parameter 12V system 24V system U S 65v to 87V 123V to 174V R i 0.5Ω to 4Ω 1Ω to 8Ω t d 40 ms to 400 ms 100 ms to 350 ms t r 0 (10-5 ms Note: LF use td=400ms for 12V system test; td=350ms for 24V system

TVS Diodes I-V Curve Characteristics P PPM Peak Pulse Power Dissipation -- Max power dissipation Uni-directional V R Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation V BR Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (I T V C Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current Vc VBR VR IR IT VF V I R V F Reverse Leakage Current -- Current measured at V R Forward Voltage Drop for Uni-directional Ipp Ratings and Characteristic Curves (T A =25 C unless otherwise noted Figure 1 - Peak Pulse Current Rating Curve Figure 2 - Peak Pulse Power Derating Curve PPPM-Peak Pulse Power(kW 100 10 1 0.1 0.01 0.1 1 10 100 t d-pulse Width (ms Peak Pulse Power (P PP or Current (I PP Derating in Percentage % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 T J - Initial Junction Temperature (ºC Figure 3 - Typical Transient Thermal Impedance θ θ

Temperature TVS Diodes Figure 4 - Typical SOA Chart 0.50 ISO7637 5A 12V Test System 0.50 ISO7637 5A 12V Test System Ri(ohm 0.75 1.00 1.25 SLD12A SLD15A Td:400ms Ri(ohm 0.75 1.00 1.25 SLD20A SLD24A Td:400ms 1.50 1.50 1.75 65 70 75 80 85 Vs(volt 1.75 65 70 75 80 85 Vs(volt Figure 5 - Typical Junction Capacitance 1.5 ISO7637 5A 24V Test System 100 2.0 Uni-directional V=0V SLD30A SLD36A Ri(ohm 2.5 3.0 Cj (pf 10 Uni-directional @ V R Td:350ms 3.5 4.0 123 133 143 153 163 173 Vs(volt 1 10 100 V BR - Reverse Breakdown Voltage (V Note: SOA (Safe Operation Area refer to the area which below the curve line and refer to APP note for details. Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min 150 C - Temperature Max (T s(max 200 C Pb Free assembly - Time (min to max (t s 60 180 secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate 5 C/second max 5 C/second max T P T L T S(max T S(min t S Ramp-up Preheat t P t L Ramp-down Reflow - Temperature (T L (Liquidus 217 C - Time ( min to max (T S 60 150 seconds 25 time to peak temperature Time Peak Temperature (T P 260 +0/-5 C Time within 5 C of actual peak Temperature (t p 20 40 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P 8 minutes Max. Do not exceed 260 C

Physical Specifications Environmental Specifications Terminal Finish 100% Matte Tin-plated High Temp. Storage JESD22-A103 Body Material Lead Material UL recognized epoxy meeting flammability classification 94V-0 Copper Alloy HTRB JESD22-A108 Temperature Cycling JESD22-A104 MSL JEDEC-J-STD-020, LEVEL 1 H3TRB JESD22-A101 RSH JESD22-A111 Dimensions A B F G H Inches Millimeters Dimensions Min Max Min Max A 0.568 0.600 14.44 15.24 C TOP VIEW E D J U I SIDE VIEW B 0.380 0.420 9.65 10.67 C 0.098 0.114 2.50 2.90 D 0.169 0.189 4.30 4.80 E 0.102 0.118 2.60 3.00 F 0.178 0.188 4.52 4.78 AREA: 0.11 IN 2 0.085 (2.16 0.413 (10.50 G 0.045 0.060 1.14 1.52 H 0.360 0.370 9.14 9.40 M 0.320 (8.13 BOTTOM VIEW 0.331 0.276 (8.41 (7.01 0.276 (7.01 0.032 (0.81 0.091 (2.30 0.350 (8.89 0.118 (3.00 0.601 (15.27 RECOMMEND SOLDERING PAD OUTLINE I 0.106 0.122 2.69 3.09 J 0.069 0.089 1.75 2.25 M 0.284 0.300 7.22 7.62 U 0 0.010 0 0.25 Part Numbering System Part Marking System SLD 8 S XX A 5% Voltage Tolerance Voltage SMTO-263 package Power Dissipation Littelfuse Logo Cathode Band F SLD8SXXX YMXXX Date Code Marking Y: Year Code M: Month Code XXX:Lot Code Series Code

Packaging Part Number Component Package Quantity Packaging Option SLD8SxxA SMTO-263 500 Embossed Carrier SMTO-263 Embossed Carrier Reel Pack (RP Specifications Meets all EIA-481-2 Standards 0.63 (16.0 0.157 (4.0 0.059 DIA (1.5 0.945 (24.0 0.827 (21.0 * * Cover tape 0.512 (13.0 Arbor Hole Dia. 12.99 (330.0 Dimensions are in inches (and millimeters. 1.01 (25.7 Direction of Feed