Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 9 0 @ 0.125 in ESD Ratings: Human Body Model, B 00 Machine Model, C 00 PbFree Packages are Available MAXIMUM RATINS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note 1) (T J = 0 to 125 C, Sine Wave, 50 to 60 Hz, DRM, RRM ate Open) MCR12DCM 600 MCR12DCN 0 OnState RMS Current (1 Conduction Angles; T C = 90 C) I T(RMS) 12 A SCRs 12 AMPERES RMS 600 0 OLTS A 1 2 CASE 69C STYLE K Average OnState Current (1 Conduction Angles; T C = 90 C) I T(A) 7.8 A MARKIN DIARAM Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T J = 125 C) I TSM A Circuit Fusing Consideration (t = 8. msec) I 2 t 1 A 2 sec Forward Peak ate Power (Pulse Width sec, T C = 90 C) Forward Average ate Power (t = 8. msec, T C = 90 C) Forward Peak ate Current (Pulse Width sec, T C = 90 C) P M 5.0 W P (A) 0.5 W I M A Operating Range T J 0 to 125 C Storage Temperature Range T stg 0 to 150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. DRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. 1 2 Y WW R12DCx YWW R1 2DCx = Year = Work Week = Device Code x= M or N = PbFree Package PIN ASSINMENT Cathode Anode ate Anode ORDERIN INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2006 February, 2006 Rev. 5 1 Publication Order Number: MCR12DCM/D
THERMAL CHARACTERISTICS Thermal Resistance Characteristic Symbol Max Unit JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note ) T L 260 C R JC R JA R JA 2.2 88 C/W ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current ( AK = Rated DRM or RRM, ate Open) T J = 25 C T J = 125 C ON CHARACTERISTICS Peak Forward OnState oltage (Note ) (I TM = 20 A) TM 1. 1.9 ate Trigger Current (Continuous dc) ( D = 12, R L = ) T J = 25 C T J = 0 C ate Trigger oltage (Continuous dc) ( D = 12, R L = ) T J = 25 C T J = 0 C ate NonTrigger oltage ( D = 12, R L = ) T J = 125 C Holding Current ( D = 12, Initiating Current = 200, ate Open) T J = 25 C T J = 0 C Latching Current ( D = 12, I = 20, T J = 25 C) ( D = 12, I = 0, T J = 0 C) DYNAMIC CHARACTERISTICS I DRM, I RRM I T T 0.5 7.0 0.65 0.01 5.0 20 0 D 0.2.0 I L.0 22 22 0 0 Critical Rate of Rise of OffState oltage ( D = Rated DRM, Exponential Waveform, ate Open, T J = 125 C) 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.. 1/8 from case for seconds.. Pulse Test: Pulse Width msec, Duty Cycle 2%. dv/dt 50 200 / s ORDERIN INFORMATION Device Package Shipping MCR12DCMT 2500 / Tape and Reel MCR12DCMT (PbFree) 2500 / Tape and Reel MCR12DCNT 2500 / Tape and Reel MCR12DCNT (PbFree) 2500 / Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD11/D. 2
I MCR12DCM, MCR12DCN oltage Current Characteristic of SCR + Current Anode + Symbol DRM I DRM RRM I RRM TM Parameter Peak Repetitive OffState Forward oltage Peak Forward Blocking Current Peak Repetitive OffState Reverse oltage Peak Reverse Blocking Current Peak OnState oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region TM + oltage I DRM at DRM Forward Blocking Region (off state) Anode T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 125 120 115 1 5 dc 95 = Conduction Angle.0 90 = 0 60 90 120 1 85 0 0.0.0 5.0 6.0 7.0 8.0 0.0.0 5.0 6.0 7.0 8.0 I T(A), AERAE ONSTATE CURRENT (AMPS) I T(A), AERAE ONSTATE CURRENT (AMPS) (A), AERAE POWER DISSIPATION (WATTS) P 16 1 12 8.0 6.0 = Conduction Angle = 0 60 90 120 1 dc Figure 1. Average Current Derating Figure 2. OnState Power Dissipation, INSTANTANEOUS ONSTATE CURRENT (AMPS) T 0.1 0 TYPICAL @ T J = 25 C MAXIMUM @ T J = 125 C MAXIMUM @ T J = 25 C r (t), TRANSIENT RESISTANCE (NORMALIZED) 0.1 Z JC(t) = R JC(t) r(t) 0.01.0.0 5.0 0.1 0 K T, INSTANTANEOUS ONSTATE OLTAE (OLTS) t, TIME (ms) Figure. OnState Characteristics Figure. Transient Thermal Response
I MCR12DCM, MCR12DCN I T, ATE TRIER CURRENT () 0 T, ATE TRIER OLTAE (OLTS) 0.2 25 5.0 20 5 50 65 95 1 125 0 25 5.0 20 5 50 65 95 1 125 0.9 0.8 0.7 0.6 0.5 0. 0. Figure 5. Typical ate Trigger Current versus Figure 6. Typical ate Trigger oltage versus, HOLDIN CURRENT (), LATCHIN CURRENT () L 0 25 5.0 20 5 50 65 95 1 125 0 25 5.0 20 5 50 65 95 1 125 Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus 0 D = 0 T J = 125 C STATIC dv/dt (/ s) 0 K R K, ATECATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus atecathode Resistance
PACKAE DIMENSIONS CASE 69C ISSUE O B C T SEATIN PLANE NOTES: 1. DIMENSIONIN AND TOLERANCIN PER ANSI Y1.5M, 1982. 2. CONTROLLIN DIMENSION: INCH. S F R 1 2 L A K D 2 PL J H 0.1 (0.005) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.25 0.25 5.97 6.22 B 0.250 0.265 6.5 6.7 C 0.086 0.09 2.19 2.8 D 0.027 0.05 0.69 0.88 E 0.018 0.02 0.6 0.58 F 0.07 0.05 0.9 1.1 0.1 BSC.58 BSC H 0.0 0.00 0.87 1 J 0.018 0.02 0.6 0.58 K 0.2 0.11 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.1 0.215.57 5.5 S 0.025 0.00 0.6 1 U 0.020 0.51 0.05 0.050 0.89 1.27 Z 0.155.9 STYLE : PIN 1. CATHODE 2. ANODE. ATE. ANODE SOLDERIN FOOTPRINT* 6.20 0.2 2.58 0.1.0 0.118 5. 0.228 1.6 0.06 6.172 0.2 SCALE :1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERIN INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6112, Phoenix, Arizona 85082112 USA Phone: 82977 or 0860 Toll Free USA/Canada Fax: 8297709 or 0867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 02829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 150051 Phone: 81577850 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MCR12DCM/D