NE592 Video Amplifier

Transcription

1 Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an -pin version with fixed gain of without external components and adjustable gain from to with one external resistor. Features 2 MHz Unity Gain Bandwidth Adjustable Gains from to Adjustable Pass Band No Frequency Compensation Required Wave Shaping with Minimal External Components MIL-STD Processing Available These Devices are PbFree and are RoHS Compliant Applications Floppy Disk Head Amplifier Video Amplifier Pulse Amplifier in Communications Magnetic Memory Video Recorder Systems SOIC D SUFFIX CASE MARKING DIAGRAMS A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week or G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. NE ALYW SOIC NEDG D SUFFIX AWLYWW CASE A +V R R2 R R R9 Q6 Q Q Q3 R OUTPUT INPUT INPUT 2 Q Q2 GA GB R3 R R2 OUTPUT 2 G2A G2B QA QB Q Q9 Q Q RA RB R R6 R3 R V Figure. Block Diagram Semiconductor Components Industries, LLC, 26 March, 26 Rev. Publication Order Number: NE/D

2 PIN CONNECTIONS SOIC- SOIC- INPUT 2 NC G 2B GAIN SELECT G B GAIN SELECT V INPUT NC G 2A GAIN SELECT G A GAIN SELECT V+ INPUT 2 G B GAIN SELECT V OUTPUT (Top View) INPUT G A GAIN SELECT V+ OUTPUT NC 6 9 NC OUTPUT 2 OUTPUT (Top View) MAXIMUM RATINGS (T A = +2 C, unless otherwise noted.) Rating Symbol Value Unit Supply Voltage V CC. V Differential Input Voltage V IN. V Common-Mode Input Voltage V CM 6. V Output Current I OUT ma Operating Ambient Temperature Range T A to + C Operating Junction Temperature T J C Storage Temperature Range T STG 6 to + C Maximum Power Dissipation, T A = 2 C (Still Air) (Note ) Thermal Resistance, JunctiontoAmbient SOIC- Package SOIC- Package SOIC- Package SOIC- Package P D MAX.9.9 R JA 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Derate above 2 C at the following rates: SOIC- package at 6.9 mw/ C SOIC- package at. mw/ C W C/W 2

3 DC ELECTRICAL CHARACTERISTICS (V SS = 6. V, V CM =, typicals at T A = +2 C, min and max at C T A C, unless otherwise noted. Recommended operating supply voltages V S = 6. V.) Characteristic Test Conditions Symbol Min Typ Max Unit Differential Voltage Gain Gain (Note 2) Gain 2 (Notes 3 and ) Input Resistance Gain (Note 2) Gain 2 (Notes 3 and ) A VOL L OUT P-P T A = 2 C C T A C Input Capacitance Gain 2 (Note ) C IN 2. pf Input Offset Current T A = 2 C C T A C R IN I OS V/V k A Input Bias Current T A = 2 C C T A C I BIAS 9. 3 A Input Noise Voltage BW. khz to MHz V NOISE 2 V RMS Input Voltage Range V IN. V Common-Mode Rejection Ratio Gain 2 (Note ) Supply Voltage Rejection Ratio Gain 2 (Note ) V CM. V, f < khz, T A = 2 C V CM. V, f < khz, C T A C V CM. V, f <. MHz CMRR 6 V S =. V PSRR db 6 6 db Output Offset Voltage Gain Gain 2 (Note ) Gain 3 (Note ) Gain 3 (Note ) R L = R L = R L =, T A = 2 C R L =, C T A C Output Common-Mode Voltage R L =, T A = 2 C V CM V Output Voltage Swing Differential R L = 2. k, T A = 2 C R L = 2. k, C T A C V OS V OUT Output Resistance R OUT 2 Power Supply Current R L =, T A = 2 C R L =, C T A C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (T A = +2 C V SS = 6. V, V CM =, unless otherwise noted. Recommended operating supply voltages V S = 6. V.) Characteristic Test Conditions Symbol Min Typ Max Unit Bandwidth Gain (Note 2) Gain 2 (Notes 3 and ) Rise Time Gain (Note 2) Gain 2 (Notes 3 and ) Propagation Delay Gain (Note 2) Gain 2 (Notes 3 and ) 2. Gain select Pins G A and G B connected together. 3. Gain select Pins G 2A and G 2B connected together.. Applies to -pin version only.. All gain select pins open. I CC BW t R OUT PP t PD OUT PP V V ma MHz ns ns 3

4 TYPICAL PERFORMANCE CHARACTERISTICS COMMON-MODE REJECTION RATIO db k k M M M OUTPUT VOLTAGE SWING Vpp R L = k GAIN R L = k FREQUENCY Hz FREQUENCY MHz TIME ns Figure 2. CommonMode Rejection Ratio as a Function of Frequency Figure 3. Output Voltage Swing as a Function of Frequency Figure. Pulse Response SUPPLY CURRENT ma OUTPUT VOLTAGE V R L = k V S = +V V S = +3V OUTPUT VOLTAGE V V S = + 6V R L = k T amb = o C T A = o C 3 6 SUPPLY VOLTAGE +V TIME ns TIME ns Figure. Supply Current as a Function of Temperature Figure 6. Pulse Response as a Function of Supply Voltage Figure. Pulse Response as a Function of Temperature RELATIVE VOLTAGE GAIN.. V S = + 6V GAIN TEMPERATURE o C SINGLE ENDED VOLTAGE GAIN db T A = o C T A = 2o C V S = + 6V R L = k FREQUENCY MHz RELATIVE VOLTAGE GAIN..3 T amb = 2o C GAIN SUPPLY VOLTAGE +V Figure. Voltage Gain as a Function of Temperature Figure 9. Gain vs. Frequency as a Function of Temperature Figure. Voltage Gain as a Function of Supply Voltage

5 TYPICAL PERFORMANCE CHARACTERISTICS SINGLE ENDED VOLTAGE GAIN db V S = +V V S = +3V - FREQUENCY MHz R L = k 2 3.2F.2F R ADJ k k DIFFERENTIAL VOLTAGE GAIN V/V. f = khz FIGURE 2. K K K M R ADJ Figure. Gain vs. Frequency as a Function of Supply Voltage Figure 2. Voltage Gain Adjust Circuit Figure 3. Voltage Gain as a Function of RADJ (Figure 2) SUPPLY CURRENT ma OVERDRIVE RECOVERY TIME ns OUTPUT VOLTAGE SWING V OR OUTPUT SINK CURRENT ma VOLTAGE CURRENT TEMPERATURE o C Figure. Supply Current as a Function of Temperature DIFFERENTIAL INPUT VOLTAGE mv Figure. Differential Overdrive Recovery Time SUPPLY VOLTAGE +V Figure 6. Output Voltage and Current Swing as a Function of Supply Voltage OUTPUT VOLTAGE SWING Vpp K K K LOAD RESISTANCE Ω INPUT RESISTANCE K TEMPERATURE o C INPUT NOISE VOLTAGE μ Vrms BW = MHz K K SOURCE RESISTANCE Figure. Output Voltage Swing as a Function of Load Resistance Figure. Input Resistance as a Function of Temperature Figure 9. Input Noise Voltage as a Function of Source Resistance

6 TYPICAL PERFORMANCE CHARACTERISTICS PHASE SHIFT DEGREES PHASE SHIFT DEGREES GAIN FREQUENCY MHz -3 FREQUENCY MHz Figure 2. Phase Shift as a Function of Frequency Figure 2. Phase Shift as a Function of Frequency VOLTAGE GAIN db GAIN T amb = 2o C R L = K VOLTAGE GAIN db GAIN 3 FREQUENCY MHz -.. FREQUENCY MHz Figure 22. Voltage Gain as a Function of Frequency Figure 23. Voltage Gain as a Function of Frequency TEST CIRCUITS (T A = 2 C, unless otherwise noted.) V IN R L V OUT.2F e in.2f e out e out k k Figure 2. Test Circuits 6

7 2r e +6 NOTE: V (s). v (s) Z(S) 2r e. Z(S) 32 V Z -6 Basic Configuration V +6.2F Q Q V C.2F 2K 2K V AMPLITUDE: mv p p FREQUENCY: MHz NOTE: For frequency F << /2 π (32) C READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR Disc/Tape Phase-Modulated Readback Systems V O. x C dvi dt Differentiation with High Common-Mode Noise Rejection Figure 2. Typical Applications Z NETWORK FILTER TYPE V (s) TRANSFER V (s) FUNCTION R L LOW PASS. L s RL R C HIGH PASS. R s s RC R L C BAND PASS. L s s 2 RLs LC R L C BAND REJECT. R s 2 LC s 2 LC src NOTES: In the networks above, the R value used is assumed to include 2r e, or approximately 32. S = j = 2πf Figure 26. Filter Networks

8 ORDERING INFORMATION NEDG NEDR2G NEDG NEDR2G Device Temperature Range Package Shipping to + C SOIC (PbFree) SOIC (PbFree) 9 Units/Rail 2 / Tape & Reel Units/Rail 2 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD/D.

9 PACKAGE DIMENSIONS SOIC NB CASE ISSUE AK Y B X A S.2 (.) M Y M K NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.2 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. THRU 6 ARE OBSOLETE. NEW STANDARD IS. Z H G D C.2 (.) M Z Y S X S SEATING PLANE. (.) N X M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.2 BSC. BSC H..2.. J K M N S SOLDERING FOOTPRINT* SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

10 PACKAGE DIMENSIONS H.2 M B M. e D 3X b A B E.2 M C A S B S A A C SEATING PLANE SOIC CASE A3 ISSUE L DETAIL A h X 6. M L A3 SOLDERING FOOTPRINT* DETAIL A X. NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE.3 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION.. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS.. MAXIMUM MOLD PROTRUSION. PER SIDE. MILLIMETERS INCHES DIM MIN MAX MIN MAX A A..2.. A b D E e.2 BSC. BSC H h L M.2 PITCH X. DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, Aurora, Colorado USA Phone: 3362 or 336 Toll Free USA/Canada Fax: or 336 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 229 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: 3 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NE/D