l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G P - 9339 IRF520N HEXFET Power MOSFET S TO-220B V SS = 00V R S(on) = 0.20Ω I = 9.7 bsolute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ 0V 9.7 I @ T C = 00 C Continuous rain Current, V GS @ 0V 6.8 I M Pulsed rain Current 38 P @T C = 25 C Power issipation 48 W Linear erating Factor 0.32 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy 9 mj I R valanche Current 5.7 E R Repetitive valanche Energy 4.8 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3. R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 5/3/98
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 00 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0. V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.20 Ω V GS = 0V, I = 5.7 V GS(th) Gate Threshold Voltage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 2.7 S V S = 50V, I = 5.7 I SS rain-to-source Leakage Current 25 V µ S = 00V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 25 I = 5.7 Q gs Gate-to-Source Charge 4.8 nc V S = 80V Q gd Gate-to-rain ("Miller") Charge V GS = 0V, See Fig. 6 and 3 t d(on) Turn-On elay Time 4.5 V = 50V t r Rise Time 23 I = 5.7 ns t d(off) Turn-Off elay Time 32 R G = 22Ω t f Fall Time 23 R = 8.6Ω, See Fig. 0 Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 330 V GS = 0V C oss Output Capacitance 92 pf V S = 25V C rss Reverse Transfer Capacitance 54 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 9.7 (Body iode) showing the G I SM Pulsed Source Current integral reverse 38 (Body iode) p-n junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 5.7, V GS = 0V t rr Reverse Recovery Time 99 50 ns T J = 25 C, I F = 5.7 Q rr Reverse RecoveryCharge 390 580 nc di/dt = 00/µs S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 4.7mH R G = 25Ω, I S = 5.7. (See Figure 2) ƒ I S 5.7, di/dt 240/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%.
I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C 0. 0 00 V S, rain-to-source Voltage (V) I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 75 C 0. 0 00 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 00 0 T = 25 C J V S= 50V 20µs PULSE WITH 4 5 6 7 8 9 0 V GS T = 75 C J, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (N orm alized) 3.0 2.5 2.0.5.0 0.5 I = 9.5 V GS = 0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
C, Capacitance (pf) 600 500 400 300 200 00 C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 0 00 V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS 20 6 2 8 4 I = 5.7 V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT 0 SEE FIGURE 3 0 5 0 5 20 25 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current () 00 0 OP ER TIO N IN TH IS RE LIM ITE BY R S(on) 0µs 00µs ms 0ms V GS = 0V 0.4 0.6 0.8.0.2.4 V S, Source-to-rain Voltage (V) T C = 25 C T J = 75 C Single P u lse 0. 0 00 000 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea
0.0 8.0 R G V GS V S R.U.T. - V I, rain Current () 6.0 4.0 2.0 Fig 0a. Switching Time Test Circuit V S 90% 0V Pulse Width µs uty Factor 0. % 0.0 25 50 75 00 25 50 75 T C, Case Temperature ( C) 0% V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig 0b. Switching Time Waveforms 0 Thermal Response (Z thjc ) 0. = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
L V S.U.T. R G V - 0 V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS t p V V S E S, Single Pulse valanche Energy (mj) 200 60 20 80 40 I TOP 2.3 4.0 BOTTOM 5.7 V = 25V 0 25 50 75 00 25 50 75 Starting T J, Junction Temperature ( C) I S Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum valanche Energy Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ 0 V Q GS Q G Q G 2V.2µF.3µF.U.T. V - S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS
Package Outline TO-220B Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) - - 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4 6.47 (.255) 6.0 (.240) 2 3.5 (.045) M IN LE SSIGNMENTS - GTE 2 - RIN 3 - SOU RC E 4 - RIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.00) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) IM E N S IO N IN G & TO L E R N C ING P E R N S I Y 4.5M, 9 82. 3 O U T LIN E C O N F O R M S TO JE E C O U T LIN E TO -2 20 - B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. Part Marking Information TO-220B EXMPLE : THIS IS N IRF00 W ITH SSEMBLY LOT CO E 9BM INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRF00 9246 9B M PRT NUMBER TE COE (YYWW ) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) 475 897 IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: 39 45 0 IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Building, Singapore 036 Tel: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/