Thermal Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambient f 230 C/W

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1 P F IRLML2803 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) vaiabe in Tape and Ree Fast Switching G S 2 3 V SS = 30V R S(on) = 0.25Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. customized eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro3 bsoute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 0V.2 T = 70 C Continuous rain Current, V 0V 0.93 I M Pused rain Current c 7.3 = 25 C Power issipation 540 mw Linear erating Factor 4.3 mw/ C V GS Gate-to-Source Votage ±20 V E S Singe Puse vaanche Energyg 3.9 mj dv/dt Peak diode Recovery dv/dtd 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient f 230 C/W 2/4/

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ ΔV (BR)SS/ΔT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.25V GS = 0V, I = 0.9 ƒ Ω 0.40 V GS = 4.5V, I = 0.46 ƒ V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 0.87 S V S = 0V, I = 0.46 I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 25V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge I = 0.9 Q gs Gate-to-Source Charge nc V S = 24V Q gd Gate-to-rain ("Mier") Charge..7 V GS = 0V, See Fig. 6 and 9 ƒ t d(on) Turn-On eay Time 3.9 V = 5V t r Rise Time 4.0 I = 0.9 ns t d(off) Turn-Off eay Time 9.0 R G = 6.2Ω t f Fa Time.7 R = 6Ω, See Fig. 0 ƒ C iss Input Capacitance 85 V GS = 0V C oss Output Capacitance 34 pf V S = 25V C rss Reverse Transfer Capacitance 5 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 0.54 (Body iode) showing the I SM Pused Source Current integra reverse 7.3 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S = 0.9, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 0.9 Q rr Reverse RecoveryCharge nc di/dt = 00/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 0.9, di/dt 20/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t 5sec. Limited by T Jmax, starting T J = 25 C, L = 9.4mH, R G = 25Ω, I S =

3 I, rain-to-source Current () 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, rain-to-source Current () 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20μs PULSE WITH 0. T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20μs PULSE WITH 0. T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T J= 25 C T = 50 C J V S= 0V 20μs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 0.9 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss V S, rain-to-source Votage (V) V, Gate-to-Source Votage (V) GS I = 0.9 V S = 24V V S = 5V FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 0. T J = 50 C T J = 25 C T = 25 C T J = 50 C 0ms V GS = 0V Singe Puse V S, Source-to-rain Votage (V) V S, rain-to-source Votage (V) I, rain Current () 00 OPERTION IN THIS RE LIMITE BY RS(on) 0 0μs 00μs ms Fig 7. Typica Source-rain iode Fig 8. Maximum Safe Operating rea Forward Votage 4

5 Q G V S R 0V Q GS Q G R G V GS.U.T. - V V G 0V Charge Puse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform Current Reguator Same Type as.u.t. Fig 0a. Switching Time Test Circuit V S 2V.2μF 50KΩ.3μF 90%.U.T. V - S V GS 0% V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 000 Therma Response (Z thj ) 00 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5

6 E S, Singe Puse vaanche Energy (mj) IRLML2803 5V 8 V S L RIVER 6 4 I TOP BOTTOM 0.90 R G 20V V GS tp.u.t IS 0.0Ω - V Fig 2a. Uncamped Inductive Test Circuit tp V (BR)SS Starting T J, Junction Temperature ( C) I S Fig 2b. Uncamped Inductive Waveforms Fig 2c. Maximum vaanche Energy vs. rain Current -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =0V V * R G dv/dt controed by RG river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test V - Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 3. Peak iode Recovery dv/dt Test Circuit for N-Channe HEXFET Power MOSFETs 6

7 Micro3 (SOT-23) (Lead-Free) Package Outine imensions are shown in miimeters (inches) B E e X e b 0.20 [0.008] 0.0 [0.004] C M C C B 5 E 0.5 [0.006] M C B H 4 L 3X L 7 L2 c IMENSIONS SYMBOL MILLIMETERS INCHES MIN MX MIN MX b c E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC Recommended Footprint NOTES: IMENSIONING & TOLERNCING PER NSI Y4.5M IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING IMENSION: MILLIMETER. 4. TUM PLNE H IS LOCTE T THE MOL PRTING LINE. 5. TUM N B TO BE ETERMINE T TUM PLNE H. 6. IMENSIONS N E RE MESURE T TUM PLNE H. IMENSIONS OES NOT INCLUE MOL PROTRUSIONS OR INTERLE FLSH. MOL PROTRUSIONS OR INTERLE FLSH SHLL NOT EXCEE 0.25 MM [0.00 INCH] PER SIE. 7. IMENSION L IS THE LE LENGTH FOR SOLERING TO SUBSTRTE. 8. OUTLINE CONFORMS TO JEEC OUTLINE TO-236 B. Micro3 (SOT-23 / TO-236B) Part Marking Information Micro3 / SOT-23 Package Marking PRT NUMBER HLOGEN FREE INICTOR YW LC Y = YER W = WEEK LOT COE PRT NUMBER COE REFERENCE: = IRLML2402 B =IRLML2803 C = IRLML2402 = IRLML503 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Note: ine above the work week (as shown here) indicates Lead-free W = (-26) IF PRECEE BY LST IGIT OF CLENR YER YER Y WOR K WE EK W 0 02 B 03 C X Y Z W = (27-52) IF PRECEE BY LETTER WOR K YER Y WE EK W B 28 B 2003 C 29 C E 2006 F 2007 G 2008 H 2009 J 200 K 50 X 5 Y 52 Z Note: For the most current drawing pease refer to IR website at 7

8 Tape & Ree Information SOT-23 imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.00 ) ( ) MX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. Note: For the most current drawing pease refer to IR website at ata and specifications subject to change without notice. IR WORL HEQURTERS: 0N.Sepuveda Bvd, E Segundo, Caifornia 90245, US Te: (30) TC Fax: (30) Visit us at for saes contact information. 2/20 8