C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

l dvanced Process Technology l Surface Mount (IRF4905S) l Lowprofile throughhole (IRF4905L) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The throughhole version (IRF4905L) is available for lowprofile applications. G P 9.1478 IRF4905S/L HEXFET Power MOSFET S 2 Pak TO262 V SS = 55V R S(on) = 0.02Ω I = 74 bsolute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ 10V 74 I @ T C = 100 C Continuous rain Current, V GS @ 10V 52 I M Pulsed rain Current 260 P @T = 25 C Power issipation 3.8 W P @T C = 25 C Power issipation 200 W Linear erating Factor 1.3 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy 930 mj I R valanche Current 38 E R Repetitive valanche Energy 20 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θj Junctiontombient ( PCB Mounted,steadystate)** 40 C/W 8/25/97

Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.05 V/ C Reference to 25 C, I = 1m R S(on) Static raintosource OnResistance 0.02 Ω V GS = 10V, I = 38 V GS(th) Gate Threshold Voltage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 21 S V S = 25V, I = 38 I SS raintosource Leakage Current 25 V µ S = 55V, V GS = 0V 250 V S = 44V, V GS = 0V, T J = 150 C I GSS GatetoSource Forward Leakage 100 V GS = 20V n GatetoSource Reverse Leakage 100 V GS = 20V Q g Total Gate Charge 180 I = 38 Q gs GatetoSource Charge 32 nc V S = 44V Q gd Gatetorain ("Miller") Charge 86 V GS = 10V, See Fig. 6 and 13 t d(on) TurnOn elay Time 18 V = 28V t r Rise Time 99 I = 38 ns t d(off) TurnOff elay Time 61 R G = 2.5Ω t f Fall Time 96 R = 0.72Ω, See Fig. 10 L S Internal Source Inductance 7.5 nh Between lead, and center of die contact C iss Input Capacitance 3400 V GS = 0V C oss Output Capacitance 1400 pf V S = 25V C rss Reverse Transfer Capacitance 640 ƒ = 1.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 74 (Body iode) showing the I SM Pulsed Source Current integral reverse G 260 (Body iode) pn junction diode. S V S iode Forward Voltage 1.6 V T J = 25 C, I S = 38, V GS = 0V t rr Reverse Recovery Time 89 130 ns T J = 25 C, I F = 38 Q rr Reverse Recovery Charge 230 350 nc di/dt = 100/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S +L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300µs; duty cycle 2%. Starting T J = 25 C, L = 1.3mH Uses IRF4905 data and test conditions R G = 25Ω, I S = 38. (See Figure 12) ƒ I S 38, di/dt 270/µs, V V (BR)SS, T J 175 C ** When mounted on 1" square PCB (FR4 or G10 Material ). For recommended footprint and soldering techniques refer to application note #N994.

I, raintosource C urrent () 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4.5V I, raintosource Current () 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4.5V 20µs PULSE WITH 20µs PULSE WITH Tc J = 25 C 1 TC J = 175 C 1 0.1 1 10 100 0.1 1 10 100 V S, raintosource Voltage (V) V S, raintosource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintosource C urrent () 100 10 T = 25 C J T = 175 C J V S = 2 5V 20µs PULSE W ITH 1 4 5 6 7 8 9 10 V GS, GatetoSource Voltage (V) R S(on), raintos ource On Resistance (Normalized) 2.0 1.5 1.0 0.5 I = 64 V GS = 10V 0.0 60 40 20 0 20 40 60 80 100 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature

C, Capacitance (pf) 7000 6000 5000 4000 3000 2000 V GS = 0V, f = 1M Hz C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd C is s C oss C rss 0 1 10 100 V S, raintosource Voltage (V) Fig 5. Typical Capacitance Vs. raintosource Voltage V GS, GatetoSource Voltage (V) 20 16 12 8 4 I = 38 V S = 44V V S = 28V FOR TEST CIRCUIT 0 SEE FIGURE 13 0 40 80 120 160 200 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, R everse rain Current () 100 10 T = 175 C J T = 25 C J I, rain C urrent () 100 10 OPE RTION IN THIS RE LIMITE BY RS(on) 100µs 1ms 10ms V GS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V S, Sourcetorain Voltage (V) T C = 25 C T J = 175 C 1 Single Pulse 1 10 100 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea

80 V S R I, rain Current () 60 40 20 R G V GS 10V Pulse Width 1 µs uty Factor 0.1 %.U.T. Fig 10a. Switching Time Test Circuit + V 0 25 50 75 100 125 150 175 T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f 10% Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thjc ) 0.1 = 0.50 0.20 0.10 0.05 t1 0.02 SINGLE PULSE t 2 0.01 (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 0.01 2. Peak T J = P M x Z thjc + T C 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse uration (sec) PM Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoCase

Fig 12a. Unclamped Inductive Test Circuit I S VS L R G.U.T V IS 20V RIVER tp 0.01Ω 15V E S, Single Pulse valanche Energy (mj) 2500 2000 1500 500 I TOP 16 27 BOT TOM 38 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( C) Fig 12c. Maximum valanche Energy Vs. rain Current tp V (BR)SS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 10V Q G 12V.2µF 50KΩ.3µF Q GS Q G.U.T. V + S V G V GS 3m Charge I G I Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

Peak iode Recovery dv/dt Test Circuit IRF4905S/L.U.T* + ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + V GS R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test + V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V GS =10V] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 14. For PChannel HEXFETS

2 Pak Package Outline 1.40 (.055) MX. 10.54 (.415) 10.29 (.405) 2 4.69 (.185) 4.20 (.165) B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F. 6.47 (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) 1 3 15.49 (.610) 14.73 (.580) 2.79 (.110) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.103) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) RE F. 0.25 (.010) M B M MINIMUM RECOMMENE FOOTPRINT 11.43 (.450) NOTES: 1 IMENSIONS FTER SOLER IP. 2 IMENSIONING & TOLERNCING PER NSI Y14.5M, 1982. 3 CONTROLLING IMENSION : INCH. 4 HETSINK & LE IMENSIONS O NOT INCLUE BURRS. LE SSIGNMENTS 1 G TE 2 R IN 3 S OU RC E 8.89 (.350) 3.81 (.150) 17.78 (.700) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information 2 Pak IN TER NTION L RECTIFIER LOGO SSEMBLY LOT COE F530S 9246 9B 1M PRT NUMBER TE COE (YYWW ) YY = YER WW = WEEK

Package Outline TO262 Outline Part Marking Information TO262

Tape & Reel Information 2 Pak TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEE IRECTION TRL 1.85 (.073) 1.65 (.065) 10.90 (.429) 10.70 (.421) 11.60 (.457) 11.40 (.449) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEE IRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M X. 60.00 (2.362) MIN. NOTES : 1. CO MFOR MS TO EI418. 2. CO NTRO LLING IMENSION: MILLIMETER. 3. IMENSIO N MESURE @ HUB. 4. INCLUES FLNGE ISTORTION @ OUTER EGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) M X. 4 WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CN: 7321 Victoria Park ve., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMNY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITLY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEST SI: 315 Outram Road, #1002 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ ata and specifications subject to change without notice. 8/97

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/