F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RS( ON), fast switching speed and extremely low R S(ON) in a small package. Applications C/C converter Motor drives November 2 Features 36 A, 2 V R S(ON) = 2 mω @ V GS = 4. V R S(ON) = 3 mω @ V GS = 2. V Low gate charge (2 nc typical) Fast switching High performance trench technology for extremely low R S(ON) F62A/FU62A G S -PAK TO-22 (TO-22) G S I-PAK (TO-2AA) G S Absolute Maximum Ratings T A=2 o C unless otherwise noted Symbol Parameter Ratings Units V SS rain-source Voltage 2 V V GSS Gate-Source Voltage ± 2 V I Continuous rain Current @T C=2 C (Note 3) 36 A P @T A=2 C (Note a).7 Pulsed (Note a) Power issipation @T C=2 C (Note 3) 43 @T A=2 C (Note a) 3.8 @T A=2 C (Note b).6 T J, T STG Operating and Storage Junction Temperature Range to +7 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case (Note ) 3. C/W R θja Thermal Resistance, Junction-to-Ambient (Note a) 4 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 96 C/W Package Marking and Ordering Information evice Marking evice Package Reel Size Tape width Quantity F62A F62A -PAK (TO-22) 3 2mm 2 units FU62A FU62A I-PAK (TO-2) Tube N/A 7 W 2 Fairchild Semiconductor Corp. F62A/FU62A Rev B (W)
Electrical Characteristics T A = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units rain-source Avalanche Ratings (Note 2) E AS rain-source Avalanche Energy Single Pulse, V = V, I =A 9 mj I AS rain-source Avalanche Current A Off Characteristics BV SS rain Source Breakdown Voltage V GS = V, I = 2 µa 2 V BVSS Breakdown Voltage Temperature I = 2 µa,referenced to 2 C 4 mv/ C T J Coefficient I SS Zero Gate Voltage rain Current V S = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 2 V, V S = V na I GSSR Gate Body Leakage, Reverse V GS = 2 V, V S = V na F62A/FU62A On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V S = V GS, I = 2 µa.6.8. V VGS(th) Gate Threshold Voltage I = 2 µa, Referenced to 2 C 3.2 mv/ C T J Temperature Coefficient R S(on) Static rain Source On Resistance mω V GS = 4. V, I =.7 A V GS = 2. V, I = 9. A V GS = 4. V, I =.7 A, T J=2 C I (on) On State rain Current V GS = 4. V, V S = V A g FS Forward Transconductance V S = V, I =.7 A S ynamic Characteristics C iss Input Capacitance 82 pf V S = V, V GS = V, C oss Output Capacitance 277 pf f =. MHz Reverse Transfer Capacitance 3 pf C rss Switching Characteristics (Note 2) t d(on) Turn On elay Time 8 6 ns t r Turn On Rise Time V = V, I = A, 8 6 ns t d(off) Turn Off elay Time V GS = 4. V, R GEN = 6 Ω 24 38 ns t f Turn Off Fall Time 6 2 22 2 3 29 8 6 ns Q g Total Gate Charge 2 9 nc Q gs Gate Source Charge V S = V, V GS = 4. V I =.7 A, 2 nc Gate rain Charge 3 nc Q gd rain Source iode Characteristics and Maximum Ratings I S Maximum Continuous rain Source iode Forward Current 2.3 A V S rain Source iode Forward Voltage V GS = V, I S = 2.3 A (Note 2).72.2 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) R θja = 4 C/W when mounted on a in 2 pad of 2 oz copper b) R θja = 96 C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 3µs, uty Cycle < 2.% Scale : on letter size paper 3. Maximum current is calculated as: P R S(ON) where P is maximum power dissipation at T C = 2 C and R S(on) is at T J(max) and V GS = V. Package current limitation is 2A F62A/FU62A Rev. B (W)
Typical Characteristics I, RAIN CURRENT (A) 3 V GS = 4.V 2 3.V 3.V 2.V 2 2.V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE 2. 2. V GS = 2.V 2.V 3.V 3.V 4.V 4.V F62A/FU62A.. 2 2. 3 V S, RAIN-SOURCE VOLTAGE (V). 2 2 3 I, RAIN CURRENT (A) Figure. On-Region Characteristics Figure 2. On-Resistance Variation with rain Current and Gate Voltage RS(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.8.6.4.2.8.6 I =.7A VGS = 4.V - -2 2 7 2 7 T J, JUNCTION TEMPERATURE ( o C) R S(ON), ON-RESISTANCE (OHM).7 I =.4 A.6..4 T A =.3 2 o C.2 T A = 2 o C. 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withtemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage I, RAIN CURRENT (A) 3 2 2 V S = V T A = - o C 2 o C 2 o C I S, REVERSE RAIN CURRENT (A)... V GS = V T A = 2 o C 2 o C - o C.. 2 2. 3 VGS, GATE TO SOURCE VOLTAGE (V)..2.4.6.8.2 VS, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature F62A/FU62A Rev. B (W)
Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I =.7A V S = V V 4 V 3 2 2 4 6 8 2 4 Qg, GATE CHARGE (nc) CAPACITANCE (pf) 8 2 9 6 3 C ISS C OSS C RSS 4 8 2 6 2 VS, RAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V F62A/FU62A Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 2, R AIN CU RR EN T (A) I. R S(ON) LIMIT V GS = V SINGLE PULSE R θja = 96 o C/W T A = 2 o C C s s ms ms ms.. V S, RAIN-SOURCE VOLTAGE (V) µs P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 96 C/W T A = 2 C... t, TIME (sec) Figure 9. Maximum Safe Operating Area Figure. Single Pulse Maximum Power issipation r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE... =..2....2 Single Pulse..... 3 t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 96 C/W t t 2 T J - T A = P * R θja (t) uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. F62A/FU62A Rev. B (W)
TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT ensetrench OME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4