Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin

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1 FDZ66PZ P-Channel.5 V Specified PowerTrench Thin WL-CSP MOSFET - V, -.6 A, 4 mω Features Max r DS(on) = 4 mω at V GS = -4.5 V, I D = - A Max r DS(on) = 8 mω at V GS = -.5 V, I D = -.5 A Max r DS(on) = 3 mω at V GS = -.8 V, I D = - A Max r DS(on) = 35 mω at V GS = -.5 V, I D = - A Occupies only.64 mm of PCB area. Less than 6% of the area of x BGA Ultra-thin package: less than.4 mm height when mounted to PCB HBM ESD protection level > kv (Note3) RoHS Compliant D S BOTTOM G S Pin Pin General Description December Designed on Fairchild's advanced.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ66PZ minimizes both PCB space and r DS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (.4 mm) and small (.8x.8 mm ) packaging, low gate charge, and low r DS(on). Applications Battery management Load switch Battery protection TOP WL-CSP.8X.8 Thin MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ±8 V -Continuous T A = 5 C (Note a) -.6 I D -Pulsed - A Power Dissipation T A = 5 C (Note a).3 P D Power Dissipation T A = 5 C (Note b).4 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 93 R θja Thermal Resistance, Junction to Ambient (Note b) 3 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity EH FDZ66PZ WL-CSP.8X.8 Thin 7 8 mm 5 units

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -5 μa, V GS = V - V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = -5 μa, referenced to 5 C -3 mv/ C I DSS Zero Gate Voltage Drain Current V DS = -6 V, V GS = V - μa I GSS Gate to Source Leakage Current V GS = ±8 V, V DS = V ±6 μa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -5 μa V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics I D = -5 μa, referenced to 5 C.5 mv/ C V GS = -4.5 V, I D = - A 8 4 V GS = -.5 V, I D = -.5 A 9 8 r DS(on) Static Drain to Source On Resistance V GS = -.8 V, I D = - A 59 3 mω V GS = -.5 V, I D = - A 35 V GS = -4.5 V, I D = - A, T J =5 C 43 4 g FS Forward Transconductance V DD = -5 V, I D = - A 7.8 S C iss Input Capacitance pf V DS = - V, V GS = V, C oss Output Capacitance 6 8 pf f = MHz C rss Reverse Transfer Capacitance 53 7 pf t d(on) Turn-On Delay Time 4.9 ns t r Rise Time V DD = - V, I D = -.5 A, ns t d(off) Turn-Off Delay Time V GS = -4.5 V, R GEN = 6 Ω 68 8 ns t f Fall Time 33 5 ns Q g Total Gate Charge nc V GS = -4.5 V, V DD = - V, Q gs Gate to Source Charge.6 nc I D = -.5 A Q gd Gate to Drain Miller Charge.7 nc V SD Source to Drain Diode Forward Voltage V GS = V, I S = -.4 A (Note ) V t rr Reverse Recovery Time 9 46 ns I F = -.5 A, di/dt = A/μs Q rr Reverse Recovery Charge 8 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 93 C/W when mounted on a in pad of oz copper. b. 3 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, Duty cycle <.%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

3 Typical Characteristics T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) V GS = -4.5 V V GS = -3 V V GS = -.5 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX 3 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. V GS = -.5 V V GS = -.8 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX I D, DRAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature I D = - A V GS = -4.5 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = -5 V T J = 5 o C T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) -IS, REVERSE DRAIN CURRENT (A) Figure 4. V GS = -.5 V I D = - A V GS = -.8 V T J = 5 o C T J = 5 o C V GS = -3 V V GS = -.5 V V GS = -4.5 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS = V -V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage T J = 5 o C T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3

4 Typical Characteristics T J = 5 C unless otherwise noted -V GS, GATE TO SOURCE VOLTAGE (V) - Ig, GATE LEAKAGE CURRENT (A) I D = -.5 A Q g, GATE CHARGE (nc) Figure VDS = V V DD = - V V DD = -8 V V DD = - V. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage CAPACITANCE (pf) -ID, DRAIN CURRENT (A) 5.. f = MHz V GS = V THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED R θja = 3 o C/W C iss C oss C rss T A = 5 o C.. -V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us ms ms ms s s DC P (PK), PEAK TRANSIENT POWER (W) t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation SINGLE PULSE R θja = 3 o C/W T A = 5 o C 4

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = 3 o C/W t, RECTANGULAR PULSE DURATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A 5

6 Dimensional Outline and Pad Layout 6

7 tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise Cool AccuPower Auto-SPM AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax Motion-SPM mwsaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I6 7

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