FQP5N60C / FQPF5N60C N-Channel QFET MOSFET

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1 FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A,.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. G DS TO-0 G DS Features December A, 600 V, R DS(on) =.5 Ω = 10 V, I D =.5 A Low Gate Charge (Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested TO-0F G D S Absolute Maximum Ratings T C = 5 C unless otherwise noted. Symbol Parameter FQP5N60C FQPF5N60C Unit S Drain-Source Voltage 600 V I D Drain Current - Continuous (T C = 5 C) * A Maximum Lead Temperature for Soldering, T L 1/8" from Case for 5 Seconds * Drain current limited by maximum junction temperature. - Continuous (T C = 100 C).6.6 * A I DM Drain Current - Pulsed (Note 1) * A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note ) 10 mj I AR Avalanche Current (Note 1) 4.5 A E AR Repetitive Avalanche Energy (Note 1) 10 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 5 C) W - Derate above 5 C W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C 300 C Thermal Characteristics Symbol Parameter FQP5N60C FQPF5N60C Unit R θjc Thermal Resistance, Junction-to-Case, Max C/W R θcs Thermal Resistance, Case-to-Sink Typ, Max C/W R θja Thermal Resistance, Junction-to-Ambient, Max C/W 1

2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQP5N60C FQP5N60C TO-0 Tube N/A N/A 50 units FQPF5N60C FQPF5N60C Electrical Characteristics TO-0F Tube N/A N/A 50 units T C = 5 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 50 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = 50 µa, Referenced to 5 C V/ C I DSS = 600 V, = 0 V µa Zero Gate Voltage Drain Current = 480 V, T C = 15 C µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = 50 µa V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, I D =.5 A Ω g FS Forward Transconductance = 40 V, I D =.5 A S Dynamic Characteristics C iss Input Capacitance = 5 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, I D = ns t r Turn-On Rise Time A, R G = 5 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 480 V, I D = 4.5 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 4.5 A V t rr Reverse Recovery Time = 0 V, I S = 4.5 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs µc Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature.. L = 18.9 mh, I AS = 4.5 A, V DD = 50 V, R G = 5 Ω, starting T J = 5 C. 3.I SD 4.5 A, di/dt 00 A/µs, V DD BS, starting T J = 5 C. 4. Essentially independent of operating temperature.

3 ! I D, Drain Current [A] R DS(ON) [Ω ], Drain-Source On-Resistance 10 1 Top : 15.0 V V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V , Drain-Source Voltage [V] Figure 1. On-Region Characteristics = 10V = 0V Note : T J = I D, Drain Current [A] 1. 50μ s Pulse Test. T C = 5 I D, Drain Current [A] I DR, Reverse Drain Current [A] o C 150 o C Figure. Transfer Characteristics o C 1. = 40V. 50μ s Pulse Test , Gate-Source Voltage [V] 1. = 0V. 50μ s Pulse Test V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = 0 V. f = 1 MHz, Gate-Source Voltage [V] = 10V = 300V = 480V Note : I D = 4.5A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3

4 Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage I D, Drain Current [A] T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) 1. = 0 V. I D = 50 μa Figure 7. Breakdown Voltage Variation vs Temperature 100 µs 1 ms 10 ms 100 ms DC 1. T C = 5 o C. T J = 150 o C 3. Single Pulse , Drain-Source Voltage [V] R DS(ON), (Normalized) Drain-Source On-Resistance I D, Drain Current [A] T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 1. T C = 5 o C. T J = 150 o C 3. Single Pulse 10 ms 100 ms 10 µs , Drain-Source Voltage [V] DC 1. = 10 V. I D =.5 A 1 ms 100 µs Figure 9-1. Maximum Safe Operating Area for FQP5N60C Figure 9-. Maximum Safe Operating Area for FQPF5N60C 5 4 I D, Drain Current [A] T C, Case Temperature [ ] Figure 10. Maximum Drain Current vs Case Temperature 4

5 Typical Characteristics (Continued) Z JC (t), Thermal Response [ o C/W] 10 - D= single pulse N otes : t 1, Square W ave Pulse Duration [sec] 1. Z θ JC (t) = 1.5 /W M ax.. D uty F actor, D =t 1 /t 3. T JM - T C = P DM * Z θ JC (t) Figure Transient Thermal Response Curve for FQP5N60C P DM t 1 t Z JC (t), Thermal Response [ o C/W] 10 - D= single pulse 1. Z θ JC (t) = 3.79 /W M ax.. D uty Factor, D =t 1 /t 3. T JM - T C = P DM * Z θ JC (t) P DM t 1, S quare W ave P ulse D uration [sec] t 1 t Figure 11-. Transient Thermal Response Curve for FQPF5N60C 5

6 1V 50KΩ 00nF I G = const. 3mA Same Type as DUT 300nF DUT 10V Charge Figure 1. Gate Charge Test Circuit & Waveform R L V DS 90% V DD R G Q g Q gs Q gd V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = LI AS BS BS -V DD I D BS I AS R G V DD I D (t) V 10 DUT V DD (t) t p t p Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms 6

7 R G DUT I SD Driver + _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7

8 Mechanical Dimensions Figure 16. TO-0, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 8

9 Mechanical Dimensions Figure 17. TO0, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 9

10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 10

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