BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438
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1 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage CES Collector-Emitter oltage CEO Collector-Emitter oltage EBO Emitter-Base oltage - 5 I C Collector Current (DC) - 4 A I CP *Collector Current (Pulse) - 7 A I B Base Current - 1 A P C Collector Dissipation (T C =25 C) 36 W T J Junction Temperature 150 C T STG Storage Temperature - 65 ~ 150 C
2 Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units CEO (sus) Collector-Emitter Sustaining oltage I CBO Collector Cut-off Current I CEO Collector Cut-off Current * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed I C = ma, I B = 0 CB =, I E = 0 CB =, I E = 0 CB =, I E = 0 CE =, BE = 0 CE =, BE = 0 CE =, BE = 0 I EBO Emitter Cut-off Current EB = - 5, I C = 0-1 ma h FE * DC Current Gain /436 : ALL DEICE /436 CE = - 5, I C = - 10mA CE = - 1, I C = - 500mA CE = - 1, I C = - 2A CE (sat) BE (on) * Collector-Emitter Saturation oltage * Base-Emitter ON oltage I C = - 2A, I B = - 0.2A CE = - 1, I C = - 2A f T Current Gain Bandwidth Product CE = - 1, I C = - 250mA 3 MHz
3 Typical Characteristics hfe, DC CURRENT GAIN CE = CE(sat)[], SATURATION OLTAGE -0.1 IC = 10 IB Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation oltage CE = BE[], BASE-EMITTER OLTAGE C CBO (pf), COLLECTOR BASE CAPACITANCE CB [], COLLECTOR BASE OLTAGE Figure 3. Base-Emitter On oltage Figure 4. Collector-Base Capacitance 0 IC MAX. (Pulsed) 48 IC Max. (Continuous) 1ms 10ms DC 10µs BD434 BD436 BD µs PC[W], POWER DISSIPATION CE[], COLLECTOR-EMITTER OLTAGE TC[ o C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
4 Package Demensions TO ± ± ±0.20 ø3.20 ± MAX ± ±0.10 (1.00) (0.50) 1.60 ± ± ± ± ± TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] Dimensions in Millimeters
5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC UltraFET CX 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only Fairchild Semiconductor Corporation Rev. H2
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Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified
BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.
Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
RS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
BC517 NPN Darlington Transistor
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NPN wideband transistor in a SOT89 plastic package.
SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323
GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low
MID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
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BUX48 High Power Bipolar Transistor
High oltage Switching Features: Collector-Emitter sustaining voltage- CEO(sus) = 400 (Minimum) - BUX48 = 450 (Minimum) -. Collector-Emitter saturation voltage- CE(sat) = 1.5 (Maximum) at I C = 10A for
