Read-only memory Implementing logic with ROM Programmable logic devices Implementing logic with PLDs Static hazards



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Points ddressed in this Lecture Lecture 8: ROM Programmable Logic Devices Professor Peter Cheung Department of EEE, Imperial College London Read-only memory Implementing logic with ROM Programmable logic devices Implementing logic with PLDs Static hazards (Floyd 101,103-5, 111-113) (Tocci 121, 124-5, 131-134) E12 Digital Electronics I 81 E12 Digital Electronics I 82 Memory Terminology Memory Cell: circuit that stores 1-bit of information Memory Word: 8 64 bits Byte: a group of 8 bits Capacity (=Density) - 4096 20-bit words = 81,920 bits = 4096*20 = 4K*20-1 M or 1 meg = 2 20-1 G or 1 giga = 2 30 ddress Read Operation (=fetch operation) Write Operation (=store operation) E12 Digital Electronics I 83 E12 Digital Electronics I 84

Read-only Memory (ROM) Eg 64x1 bit ROM ROM Device +5 Volts ROM cell can store 1 bit of information Data can be read but not changed (written) RM is read-write capable ROM is non-volatile the data is "remembered" even when the power supply to the chip is turned off the data can be read after turning the power on again RM is volatile pplications permanent storage of programmes for micro-processors look-up tables of data implementing combinational logic 0 1 2 3 4 5 BIN/1 of 8 0 8 16 24 32 40 48 56 1 9 17 25 33 41 49 57 2 10 18 26 34 42 50 58 3 11 19 27 35 43 51 59 4 12 20 28 36 44 52 60 5 13 21 29 37 45 53 61 6 14 22 30 38 46 54 62 7 15 23 31 39 47 55 63 MUX 7 0 0 } G 0_ 2 7 OUT E12 Digital Electronics I 85 E12 Digital Electronics I 86 ROM Cell Notes 6 address inputs - half for row select, half for column select row select energises all the switch transistors in one row column select uses a multiplexer to select just one column outputs are normally high but "pulled down" if a cell is programmed Storage 0 or 1 Row Column voltage is stored to represent a 0 or 1 as required If the row-line is addressed, the switch closes and the stored voltage appears on the columnline The switch is implemented with a (MOS) transistor E12 Digital Electronics I 87 E12 Digital Electronics I 88

Storage Mechanism The storage mechanism for the 0 or 1 depends on the design of the ROM Mask Programmed ROM the mask programmed ROM is programmed at the time of manufacture the switch transistor is made to have a low threshold voltage to program a 0 and a high threshold to program a 1 Field Programmable ROM (PROM) programmable using a PC-based system a semiconductor fuse is blown to program a cell to 1 Electrically Erasable Programmable ROM (EEPROM) programmable using a PC-based system the gate capacitance of a MOS transistor is charged (electrically) to store a 0 or discharged (electrically) to store a 1 '0' '0' 0 PROM Cell EPROM Cell Mask Progammed Cell E12 Digital Electronics I 89 E12 Digital Electronics I 810 Different ROM technology Implementing Logic with ROM 2 n x 1-bit ROM devices have n inputs and 1 output they can be used to implement logic directly Eg OUT = XY+Z X Y Z OUT 0 0 0 0 0 0 1 1 0 1 0 0 0 1 1 1 1 0 0 0 1 0 1 1 1 1 0 1 1 1 1 1 Programme the first 8 addresses according to the OUT column Connect X to 2, Y to 1 and Z to 0 of the ROM Usually "cheaper" than using gates for complex logic involving many variables E12 Digital Electronics I 811 E12 Digital Electronics I 812

Programmable Logic Devices (PLDs) Several different "architectures" available We will focus only on PL and CPLD PLs and CPLDs are examples of PLDs PL: Programmable rray Logic CPLD: Complex Programmable Logic Device implement SOP expressions in canonical form made from a Programmable ND section and a Fixed OR section typically can implement 8 product terms PLs are programmed like PROMs using fuses one-time programmable CPLDs are programmed like EEPROMs Electrically erasable PLs Devices with programmable ND and programmable OR E12 Digital Electronics I 813 E12 Digital Electronics I 814 PL rchitecture Detail of ND Gates in PLs 0 1 2 3 4 5 6 7 4 bit example f = 0 1 3 + >1 f 1 f 1 1 1 1 0 1 2 3 0 1 2 3 4 5 6 7 f = 0 1 2 4 6+ 1 3 4 other inputs not shown E12 Digital Electronics I 815 E12 Digital Electronics I 816

Summary of Combinational Logic Building Blocks Gates seven basic gates from which all other circuits are made ND/NND, OR/NOR, XOR/XNOR, NOT Multiplexers act as switches to connect one output to one of a number of input signals can also be used to implement logic Decoders inverted multiplexers (sometimes called demultiplexers) act as switches to connect one input to one of a number of output signals also includes circuits such as Binary to 7 Segment decoders four to seven bit decoders rithmetic Circuits binary adders, comparators, multipliers issues of signed or unsigned number representation are important Programmable Logic Devices ROMs implement arbitrary logic functions efficient for large combination logic circuits CPLDs implement canonical SOP Boolean expressions dvantages: reduction in chip count easy upgrade by just reprogramming Disadvantages programming equipment required non-standard parts to stock and document E12 Digital Electronics I 817 E12 Digital Electronics I 818 Static Hazards Gates have finite propagation delay This can cause glitches in logic waveforms Consider an inverter propagation delay of ~2nS Eg Implementation of f (, B, C) = B + C If we use an inverter to generate from then changes in will be later than changes in B C 1 >1 f T d void Static Hazards Using a Karnaugh map, look for groups of minterms which do NOT overlap These are potential hazards void the hazard by introducing additional groups so that no nonoverlapping groups remain \BC 00 01 11 10 0 1 1 1 1 1 Groups are C + B which do not overlap Potential hazard Introduce the additional term BC to avoid the hazard C + B + BC E12 Digital Electronics I 819 E12 Digital Electronics I 820