K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

Transcription

1 Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications K817P/ K827PH/ K847PH Programmable logic controllers, modems, answering machines, general applications Features Endstackable to 2.54 mm (.1 ) spacing DC isolation test voltage V IO = 5 kv Low coupling capacitance of typical.3 pf Current Transfer Ratio (CTR) selected into groups Low temperature coefficient of CTR Wide ambient temperature range Underwriters Laboratory (UL) 1577 recognized, file number E CSA (C-UL) 1577 recognized, file number E Double Protection Coupling System U Coll. Emitter 1 Anode Cath. 4 PIN 8 PIN 16 PIN C Order Instruction Ordering Code CTR Ranking Remarks K817P 5 to 6% 4 Pin = Single channel K827PH 5 to 6% 8 Pin = Dual channel K847PH 5 to 6% 16 Pin = Quad channel K817P1 4 to 8% 4 Pin = Single channel K817P2 63 to 125% 4 Pin = Single channel K817P3 to 2% 4 Pin = Single channel K817P4 16 to 32% 4 Pin = Single channel K817P5 5 to 15% 4 Pin = Single channel K817P6 to 3% 4 Pin = Single channel K817P7 8 to 16% 4 Pin = Single channel K817P8 13 to 26% 4 Pin = Single channel K817P9 2 to 4% 4 Pin = Single channel Rev. A3, 4 Sep 1 1 (9)

2 K817P/ K827PH/ K847PH Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 µs I FSM 1.5 A Power dissipation T amb 25 C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current t p /T =.5, t p 1 ms I CM ma Power dissipation T amb 25 C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kv Total power dissipation T amb 25 C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN (9) Rev. A3, 4 Sep 1

3 Electrical Characteristics (T amb = 25 C) Input (Emitter) K817P/ K827PH/ K847PH Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = µa V CEO 7 V Emitter collector voltage I E = µa V ECO 7 V Collector dark current V CE = 2 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency I F = 1 ma, V CE = 5 V, f c khz R L = Ω Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C /I F V CE = 5 V, I F = 5 ma K817P CTR.5 6. V CE = 5 V, I F = 5 ma K827PH CTR.5 6. V CE = 5 V, I F = 5 ma K847PH CTR.5 6. V CE = 5 V, I F = 1 ma K817P1 CTR.4.8 V CE = 5 V, I F = 1 ma K817P2 CTR V CE = 5 V, I F = 1 ma K817P3 CTR V CE = 5 V, I F = 1 ma K817P4 CTR V CE = 5 V, I F = 5 ma K817P5 CTR V CE = 5 V, I F = 5 ma K817P6 CTR V CE = 5 V, I F = 5 ma K817P7 CTR V CE = 5 V, I F = 5 ma K817P8 CTR V CE = 5 V, I F = 5 ma K817P9 CTR Rev. A3, 4 Sep 1 3 (9)

4 K817P/ K827PH/ K847PH Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, R L = Ω (see figure 1) t d 3. µs Rise time t r 3. µs Fall time t f 4.7 µs Storage time t s.3 µs Turn-on time t on 6. µs Turn-off time t off 5. µs Turn-on time V S = 5 V, I F = 1 ma, R L = 1 kω (see figure 2) t on 9. µs Turn-off time t off 18. µs I F I F + 5 V I C = 2 ma; adjusted through input amplitude I F R G = 5 t p T =.1 t p = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I C % 9% t p t Figure 1. Test circuit, non-saturated operation 1% t r t I F R G = 5 t p T =.1 t p = 5 s I F = 1 ma + 5 V I C t d t on t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s t f t off t s t f t off (= t s + t f ) storage time fall time turn-off time Channel I Oscilloscope Figure 3. Switching times 5 1 k Channel II R L > 1 M C L < 2 pf Figure 2. Test circuit, saturated operation 4 (9) Rev. A3, 4 Sep 1

5 Typical Characteristics (T amb = 25 C, unless otherwise specified) K817P/ K827PH/ K847PH P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V CTR rel Relative Current Transfer Ratio V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage V CE =5V I F =5mA T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature I C Collector Current ( ma ) I F Forward Current ( ma ) Figure 8. Collector Current vs. Forward Current 1 1 I F =5mA mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A3, 4 Sep 1 5 (9)

6 K817P/ K827PH/ K847PH V CEsat Collector Emitter Saturation Voltage ( V ) CTR Current Transfer Ratio ( % ) CTR=5% 1 1 1% 2% I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current V CE =5V I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k I F Forward Current ( ma ) t off Figure 12. Turn on / off Time vs. Forward Current t on t off I C Collector Current ( ma ) t on Non Saturated Operation V S =5V R L = Figure 13. Turn on / off Time vs. Collector Current 2 1 Pin 1 Indication Type K817P 82UTK Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 14. Marking example 6 (9) Rev. A3, 4 Sep 1

7 K817P/ K827PH/ K847PH Dimensions of K817P. in mm Dimensions of K827PH in mm Rev. A3, 4 Sep 1 7 (9)

8 K817P/ K827PH/ K847PH Dimensions of K847PH in mm (9) Rev. A3, 4 Sep 1

9 Ozone Depleting Substances Policy Statement K817P/ K827PH/ K847PH It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Rev. A3, 4 Sep 1 9 (9)

10 This datasheet has been download from: Datasheets for electronics components.