NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

Transcription

1 and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military qualified up to the JANTX level. Important: For the latest information, visit our website FEATURES JEDEC registered and JAN, JANTX, and JANTX qualifications are available per MIL-PRF-19500/472 (See part nomenclature for all available options) RoHS compliant versions available (commercial grade only) TO-213AA (TO-66) Package Military and other high reliability applications High frequency response TO-213AA case with isolated terminals APPLICATIONS / BENEFITS MAXIMUM T C = +25 o C unless otherwise noted Parameters/Test Conditions Symbol alue Unit Junction and Storage Temperature T J and T STG -65 to +200 o C Thermal Resistance Junction-to-Case R ӨJC 4.0 o C/W Collector-Emitter oltage CEO Collector-Base oltage Emitter-Base oltage CBO EBO1 12 EBO2 6.0 P T 2.0 Total Power T A = +25 o C (1) T C = +100 o C (2) 25 Base Current I B 0.5 A Collector Current I C 5 A Notes: 1. Derate linearly 11.4 mw/ o C for T A > +25 o C 2. Derate linearly 250 mw/ o C for T C > +100 o C 3. Applies for t p 10 ms, duty cycle 50 percent MSC Lawrence 6 Lake Street, Lawrence, MA (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 1 of 7

2 and MECHANICAL and PACKAGING CASE: Industry standard TO-213AA (3-pin TO-66), hermetically sealed FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating (on commercial grade only). Solderable per MIL-STD-750 method POLARITY: NPN (see schematic) MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws WEIGHT: Approximately 6 grams See package dimensions on last page. PART NOMENCLATURE JAN (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTX = JANTX Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-rohs Compliant JEDEC type number (see Electrical Characteristics table) Symbol I B I C I E T C CB CBO CC CE CEO EB EBO SYMBOLS & DEFINITIONS Definition Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 2 of 7

3 and ELECTRICAL T A = +25 o C unless otherwise noted Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown oltage I C = 25 ma, R B1E = 2.2 kω, R B2E = 100 Ω Collector-Emitter Breakdown oltage I E = 12 ma, base 1 open I E = 12 ma, base 2 open Collector-Emitter Cutoff Current CE = 80, EB1 = 2, R B2E = 100 Ω CE = 150, EB1 = 2, R B2E = 100 Ω ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 1.0 A, CE = 5.0, R B2E = 1 kω I C = 5.0 A, CE = 5.0, R B2E = 100 Ω I C = 10.0 A, CE = 5.0, R B2E = 100 Ω Collector-Emitter Saturation oltage I C = 5.0 A, I B = 5 ma, R B2E = 100 Ω I C = 5.0 A, I B = 10 ma, R B2E = 100 Ω Base-Emitter oltage Non-saturated CE = 5.0, I C = 5.0 A, R B2E = 100 Ω (BR)CEO (BR)EBO I CEX 1.0 µa hfe 2,000 1,000 2,000 1, ,000 10,000 CE(sat) BE 2.5 DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0 A, CE = 10.0, f = 10 MHz, R B2E = 100 Ω Output Capacitance CB = 10, 100 khz f 1 MHz, base 2 open hfe 5 25 Cobo 120 pf T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 3 of 7

4 and ELECTRICAL T C = 25 o C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Turn-On Time CC = 30, I C = 5.0 A t on 0.5 µs Turn-Off Time CC = 30, I C = 5.0 A t off 1.2 µs SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053) DC Tests T C = +100 ºC, t 1 second, 1 Cycle; t r + t f = 10 µs, R B2E = 100 Ω Test 1 CE = 5.0, I C = 5.0 A Test 2 CE = 10, I C = 2.5 A Test 3 CE = 80, I C = 95 ma () Test 4 CE = 150, I C = 35 ma () T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 4 of 7

5 and SAFE OPERATING AREA IC = Collector Current (Amperes) CE Collector to Emitter oltage (olts) FIGURE 1 Maximum Safe Operating Area T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 5 of 7

6 and SAFE OPERATING AREA (continued) IC = Collector Current (Amperes) CE Collector to Emitter oltage (olts) FIGURE 2 Safe Operating Area For Switching Between Saturation And Cutoff (unclamped inductive load) T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 6 of 7

7 and PACKAGE DIMENSIONS Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD CH HR HR HT LD LL LL MHD MHS PS PS S T T1 Emitter T2 Base (B 1 ) T3 Base (B 2 ) Case Collector NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Internal resistance (typically 750 ohms). This resistor is optional. 3. The outline contour is optional. 4. Dimension does not include sealing flanges. 5. All leads. 6. Terminal designation is as follows: 1 emitter, 2 base (B1), 3 base (B2). The collector shall be connected to the case. 7. Shape of capweld flange is optional and cannot extend beyond dimension HR. 8. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SCHEMATIC T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 7 of 7