EVERLIGHT ELECTRONICS CO., LTD.
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1 ECN : PAGE : 1/7 Features : Fast response time High photo sensitivity Small junction capacitance High reliability Description : is a high speed silicon NPN epitaxial planar phototransistor in a compact surface-mountable package. It s compatible with automatic placement equipment and can withstand IR reflow,vapor phase reflow,and wave solder processes. Applications : Miniature switch Counters and sorter Interrupter Tape and card reader Encoder Position sensor PART NO. CHIP MATERIAL LENS COLOR PT Silicon Black
2 ECN : PAGE : 2/7 Package Dimensions : Notes : 1.All dimensions are in millimeter. 2.General Tolerance: 0.1mm 3.Lens colorblack transparent. 4.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 5.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don t reproduce or cause anyone to reproduce them without EVERLIGHT s consent. 6.When using this product, please observe the absolute maximum ratings and the instructions for use outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.
3 ECN : PAGE : 3/7 Absolute Maximum Ratings at TA = 25 Parameter Symbol Rating Unit Notice Collector-Emitter Voltage V CEO 60 V Emitter-Collector-Voltage V ECO 5 V Collector Current I C 50 ma Operating Temperature Topr -25 ~ +85 Storage Temperature Tstg -40 ~ +85 Lead Soldering Temperature Tsol 260 Power Dissipation at(or below) 25Free Air Temperature Pc 100 Electronic Optical Characteristics : Parameter Symbol Min. Typ. Max. Unit Condition Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage BV CEO V BV ECO V V CE(sat) V Rise Time t r Fall Time t f Collector Dark Current I CEO na On State Collector Current I C(on) ma Wavelength of Peak Sensitivity Rang of Spectrial Bandwith ---- P nm S ---- nm I C =100 A Ee=0mW/c I E =100 A Ee=0mW/c I C =2mA Ee=1mW/c V CE =5V I C =1mA R L =1000 E e =0mW/c V CE =20V E e =1mW/c V CE =5V
4 ECN : PAGE : 4/7 Typical Electrical/Optical/Characteristics Curves
5 ECN : PAGE : 5/7 Reliability Test Item And Condition The reliability of products shall be satisfied with items listed below. Confidence level:90% LTPD:10% NO. Item Test Conditions Test Hours/ Cycle 1 REFLOW TEMP : 240 ± 5 5 sec Sample Size Failure Judgement Criteria Ac/Re 6 Min 22 PCs 0/1 H : min I C(on) L Temperature Cycle 5 min 50 cycle 22 PCs L:Lower specification limit 0/1 L : min 3 Thermal Shock H : min 10 sec 50 cycle 22 PCs 0/1 4 High Temperature Storage L : min TEMP. : hrs 22 PCs 0/1 5 Low Temperature Storage TEMP. : hrs 22 PCs 0/1 6 DC Operating Life V CE =5V 1000 hrs 22 PCs 0/1 7 High Temperature / High Humidity 85 / 85% R.H hrs 22 PCs 0/1
6 ECN : PAGE : 6/7 Test Method For Reverse Light Current Condition: Ee=1mW/c,V CE =5V Test Item: Collector Current I C(on) (Unit:mA) Package Dimensions:
7 ECN : PAGE : 7/7 Packing Specifications CPN : Customer s Production Number P/N : Production Number QTY : Packing Quantity CAT : Ranks HUE : Peak Wavelength REF : Reference LOT NO : Lot Number MADE IN TAIWAN : Production place Packing Quantity Specification Pcs/1Volume1Volume/1Bag 2.10Bags/1Carton
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2016 Mid Power LED. 2016 Mid Power Product Datasheet. Features: Table of Contents. Applications
2016 Mid Power LED Table of Contents Technology Overview.... 2 Product Selection Table... 3 Operating Characteristics.. 4 Chromaticity Diagram.... 5 Color Ranks.... 5 Features: High efficacy CRI Options:
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
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DATA SHEET PART NO. : L-314YD REV : A / 4
PARA LIGHT ELECTRONICS CO., LTD. 4F, No.1, Lane 93, Chien Yi Road, Chung Ho City, Taipei, Taiwan, R.O.C. Tel: 886-2-2225-3733 Fax: 886-2-2225-4800 E-mail: [email protected] http://www.para.com.tw DATA SHEET