Reflective Optical Sensor with Transistor Output

Transcription

1 Reflective Optical Sensor with Transistor Output Description The NY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 95 nm. The detector consists of a phototransistor. NY7 Applications Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing). Features ompact construction in center-to-center spacing of No setting required High signal output Low temperature coefficient Detector provided with optical filter urrent Transfer Ratio (TR) of typical 5% E Top view D Marking aerea Order Instruction Ordering ode Sensing Distance Remarks NY7.3 mm

2 Absolute Maximum Ratings Input (Emitter) Parameter Test onditions Symbol Value Reverse voltage V R 5 Forward current I F 5 Forward surge current t p s I FSM 3 Power dissipation T amb 25 P V Junction temperature T j Unit V ma A mw Output (Detector) Parameter Test onditions Symbol Value ollector emitter voltage V EO 32 Emitter collector voltage V EO 7 ollector current I 5 Power dissipation T amb 25 P V Junction temperature T j Unit V V ma mw oupler Parameter Test onditions Symbol Value Total power dissipation T amb 25 P tot 2 Ambient temperature range T amb 55 to +85 Storage temperature range T stg 55 to + Soldering temperature 2 mm from case, t 5 s T sd 26 Unit mw

3 Electrical haracteristics (T amb = 25 ) Input (Emitter) NY7 Parameter Test onditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Output (Detector) Parameter Test onditions Symbol Min. Typ. Max. Unit ollector emitter voltage I = 1 ma V EO 32 V Emitter collector voltage I E = A V EO 5 V ollector dark current V E = 2 V, I f =, E = I EO 2 na oupler Parameter Test onditions Symbol Min. Typ. Max. Unit ollector current V E = 5 V, I F = 2 ma, I 1).3 ma d =.3 mm (figure 1) ross talk current V E = 5 V, I F = 2 ma I 2) X 6 na (figure 1) ollector emitter saturation I F = 2 ma, I = ma, V 1) Esat.3 V voltage d =.3 mm (figure 1) 1) Measured with the Kodak neutral test card, white side with 9% diffuse reflectance 2) Measured without reflecting medium d ~ ~~ ~ ~~ Reflecting medium (Kodak neutral test card) Emitter Detector A E Figure 1. Test circuit

4 Typical haracteristics (T amb = 25, unless otherwise specified) P tot Total Power Dissipation ( mw ) oupled device Phototransistor IR-diode T amb Ambient Temperature ( ) I ollector urrent ( ma ) Kodak Neutral ard (White Side) d=.3 V E =5V I F Forward urrent ( ma ) Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 5. ollector urrent vs. Forward urrent I F Forward urrent ( ma )... I ollector urrent ( ma ) 1 Kodak Neutral ard (White Side) d=.3 I F = 5 ma 2 ma ma 5 ma 2 ma 1 ma V F Forward Voltage ( V ) V E ollector Emitter Voltage ( V ) TR rel Relative urrent Transfer Ratio Figure 3. Forward urrent vs. Forward Voltage V E =5V I F =2mA d= T amb Ambient Temperature ( ) Figure 4. Relative urrent Transfer Ratio vs. Ambient Temperature Figure 6. ollector urrent vs. ollector Emitter Voltage TR urrent Transfer Ratio ( % ) Kodak neutral card (white side) V E =5V d=.3.. I F Forward urrent ( ma ) Figure 7. urrent Transfer Ratio vs. Forward urrent

5 TR urrent Transfer Ratio ( % ) mA 5mA I F =5mA 2mA ma 1mA Kodak neutral card (white side) d=.3.. V E ollector Emitter Voltage ( V ) I e rel Relative Radiant Intensity I c rel Relative ollector urrent Figure 8. urrent Transfer Ratio vs. ollector Emitter Voltage Figure. Relative Radiant Intensity/ollector urrent vs. Displacement I ollector urrent ( ma ) 1 V E =5V I F =2mA d d Distance ( mm ) I rel Relative ollector urrent Figure 9. ollector urrent vs. Distance d = 5 mm 4 mm 3 mm 2 mm 1 mm V E = 5 V I F = 2 ma s Displacement ( mm ) E E D 1.5 D Figure 11. Relative ollector urrent vs. Displacement d s s 5mm mm 5mm mm

6 Dimensions of NY7 in mm

7 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. lass I and II ozone depleting substances in the lean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. ouncil Decision 88/54/EE and 91/69/EE Annex A, B and ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.