Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package
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1 Optocoupler, Phototransistor Output, FEATURES High BV CEO, 70 V Vishay Semiconductors i79002 A K NC NC NC B C E Isolation test voltage, 4000 V RMS Industry standard SOIC-8A surface mountable package Compatible with dual wave, vapor phase and IR reflow soldering Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION The IL205AT/IL206AT/IL207AT/IL208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8A small outline package for surface mounting which makes them ideally suited for high density application with limited space. In addition to eliminating through-hole requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard 30 V. AGENCY APPROVALS UL577, file no. E52744 system code Y CUL - file no. E52744, equivalent to CSA bulletin 5A DIN EN available with option ORDER INFORMATION PART IL205AT IL206AT IL207AT IL208AT REMARKS CTR 40 to 80 %, SOIC-8 CTR 63 to 25 %, SOIC-8 CTR 00 to 200 %, SOIC-8 CTR 60 to 320 %, SOIC-8 Document Number: 8364 For technical questions, contact: Rev..9, 08-May-08 33
2 Vishay Semiconductors Optocoupler, Phototransistor Output, ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V R 6 V Forward continuous current I F 60 ma Power dissipation P diss 90 mw Derate linearly from 25 C.2 mw/ C OUTPUT Collector emitter breakdown voltage BV CEO 70 V Emitter collector breakdown voltage BV ECO 7 V Collector-base breakdown voltage BV CBO 70 V I CMAX DC I CMAX DC 50 ma I CMAX t < ms I CMAX 00 ma Power dissipation P diss 50 mw Derate linearly from 25 C 2 mw/ C COUPLER Isolation test voltage V ISO 4000 V RMS Total package dissipation (LED and detector) P tot 240 mw Derate linearly from 25 C 3.3 mw/ C Operating temperature T amb - 55 to + 00 C Storage temperature T stg - 55 to + 50 C Soldering time at 260 C 0 s Note T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 0 ma V F.3.5 V Reverse current V R = 6 V I R µa Capacitance V R = 0 V C O 3 pf OUTPUT Collector emitter breakdown voltage I C = 00 µa BV CEO 70 V Emitter collector breakdown voltage I E = 00 µa BV ECO 7 0 V Collector emitter leakage current V CE = 0 V I CEO 5 50 na COUPLER Saturation voltage, collector emitter I C = 2 ma, I F = 0 ma V CEsat 0.4 V Capacitance, input to output C IO 0.5 pf Resistance, input to output R IO 00 GΩ Note T amb = 25 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. For technical questions, contact: Document Number: Rev..9, 08-May-08
3 Optocoupler, Phototransistor Output, Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IL205AT CTR % I F = 0 ma, V CE = 5 V IL206AT CTR % IL207AT CTR % Current transfer ratio IL208AT CTR % IL205AT CTR 3 25 % I F = ma, V CE = 5 V IL206AT CTR % IL207AT CTR % IL208AT CTR % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Switching time I C = 2 ma, R L = 00 Ω, V CC = 0 V t on, t off 3 µs SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part ) 55/00/2 Comparative tracking index CTI V IOTM 6000 V V IORM 560 V P SO 350 mw I SI 50 ma T SI 65 C Creepage 4 mm Clearance 4 mm Insulation thickness, reinforced rated per IEC mm Note As per IEC , , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Document Number: 8364 For technical questions, contact: Rev..9, 08-May-08 35
4 Vishay Semiconductors Optocoupler, Phototransistor Output, TYPICAL CHARACTERISTICS T amb = 25 C, unless otherwise specified V F - Forward Voltage (V) T A = - 55 C T A = 25 C T A = 85 C NICB - Normalized (I CB ) 00 0 Normalized to: V CB = 9.3 V I F = ma 0.7 i205at_0 I F - Forward Current (ma) Fig. - Forward Voltage vs. Forward Current 0. i205at_04 I F - LED Current (ma) Fig. 4 - Normalized Collector-Base Photocurrent vs. LED Current NCTR CE - Normalized CTR CE i205at_02 Normalized to: V CE = 0 V I F = 0 ma V CE = 5 V V CE = 0.4 V 0 I F - LED Current (ma) Fig. 2 - Normalized Non-Saturated and Saturated CTR CE vs. LED Current NICB - Normalized (I CB ) 0 0. Normalized to: V CB = 9.3 V I F = 0 ma 0.0 i205at_05 I F - LED Current (ma) Fig. 5 - Normalized Collector-Base Photocurrent vs. LED Current ICE - Collector Emitter Current (ma) 50 V CE = 0 V V CE = 0.4 V 0 i205at_03 I F - LED Current (ma) Fig. 3 - Collector Emitter Current vs. LED Current I CB - Collector Base Current (µa) i205at_06 V CB = 9.3 V 0. I F - LED Current (ma) Fig. 6 - Collector Emitter Photocurrent vs. LED Current For technical questions, contact: Document Number: Rev..9, 08-May-08
5 Optocoupler, Phototransistor Output, Vishay Semiconductors I CB - Collector Base Current (µa) i205at_06 V CB = 9.3 V 0. I F - LED Current (ma) Fig. 7 - Collector Emitter Photocurrent vs. LED Current NhFE(sat) Normalized Saturated hfe i205at_ C Normalized to: 50 C 25 C I B = 20 µa V CE = 0 V V CE = 0.4 V I B - Base Current (µa) Fig. 9 - Typical Switching Characteristics vs. Base Resistance (Saturated Operation) 0 5 ICEO - Collector Emitter (na) Typical V CE = 0 V 0-2 i205at_ T A - Ambient Temperature ( C) Fig. 8 - Base Current vs. I F and h FE Input V CC = 5 V t on t off Input R L t pdon Output t d t r t pdoff t s t r V OUT 0 % 50 % 90 % 0 % 50 % 90 % i205at_ Fig. 0 Switching Test Circuit Document Number: 8364 For technical questions, contact: Rev..9, 08-May-08 37
6 Vishay Semiconductors Optocoupler, Phototransistor Output, PACKAGE DIMENSIONS in inches (millimeters) 0.20 ± (3.05 ± 0.3) R 0.00 (0.3) (6.0) 0.54 ± C L (3.9 ± 0.3) (.27) 0.04 (0.36) Pin one ID 0.92 ± (4.88 ± 0.3) 0.06 (0.4) 0.05 ± (0.38 ± 0.05) 0.70 (4.32) (6.6) (0.9) (.4) ± (.49 ± 0.3) (0.0) (0.20) (0.20) 5 max ± (3.8 ± 0.3) ISO method A (.27) typ (0.53) ± (0.5 ± 0.0) 2 places R 0.00 (0.25) max. Lead coplanarity ± (0.04) max. i For technical questions, contact: Document Number: Rev..9, 08-May-08
7 Optocoupler, Phototransistor Output, Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D Heilbronn, Germany Document Number: 8364 For technical questions, contact: Rev..9, 08-May-08 39
8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 8-Jul-08
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Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DG273/2732/2733 DESCRIPTION The DG273/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel 2 8 7 E FETURES urrent transfer ratio at I F = m 3 4 6 5 E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
Linear Optocoupler, High Gain Stability, Wide Bandwidth
Linear Optocoupler, High Gain IL3 i9 DESCRIPTION The IL3 linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feedback
2.7 V to 5.5 V Serial Infrared Transceiver Module Family (SIR, 115.2 kbit/s)
2.7 V to 5.5 V Serial Infrared Transceiver Module Family (SIR, 115.2 kbit/s) Description The TFDU4100, TFDS4500, and TFDT4500 are a family of low power infrared transceiver modules compliant to the IrDA
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
Schottky Rectifier, 1.0 A
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2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
IR Receiver Module for Light Barrier Systems
Not for New Design - Alternative Available: New TSSP4038 (#82458) www.vishay.com IR Receiver Module for Light Barrier Systems TSOP4038 2 3 MECHANICAL DATA Pinning: = OUT, 2 = GND., 3 = V S 6672 FEATURES
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
Power Resistor Thick Film Technology
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P-Channel 60 V (D-S) MOSFET
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2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
Ultrabright White LED, Ø 3 mm
Ultrabright White LED, Ø 3 mm DESCRIPTION The VLHW41 series is a clear, untinted 3 mm LED for high end applications where supreme luminous intensity is required. These lamps utilize the highly developed
2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000
BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS
BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage
NPN wideband transistor in a SOT89 plastic package.
SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor
P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
Features. Applications. Truth Table. Close
ASSR-8, ASSR-9 and ASSR-8 Form A, Solid State Relay (Photo MOSFET) (0V/0.A/0Ω) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically
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, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
SMD Aluminum Solid Capacitors with Conductive Polymer
SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package
Linear Optocoupler, High Gain Stability, Wide Bandwidth
ishay Semiconductors Linear Optocoupler, High Gain Stability, Wide Bandwidth i9 DESCRIPTION The linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode