Transmissive Optical Sensor with Phototransistor Output
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1 TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 95 nm. The detector consists of a phototransistor. B) Applications A) Contactless optoelectronic switch, control and counter Features Compact construction No setting efforts Polycarbonate case protected against ambient light 2 case variations 3 different apertures CTR selected in groups (regarding fourth number of type designation) + E Top view D Order Instruction Ordering Code Resolution (mm) / Aperture (mm) Remarks TCST113 A).6 / 1. No mounting flags TCST213 B) With two mounting flags TCST122 A).4 /.5 No mounting flags TCST222 B) With two mounting flags TCST13 A).2 /.25 No mounting flags TCST23 B) With two mounting flags Rev. A5, 8 Jun 99 1 (9)
2 TCST11. up to TCST23. Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 3 A Power dissipation T amb 25C P V 1 mw Junction temperature T j 1 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 1 ma Collector peak current t p /T =.5, t p 1 ms I CM 2 ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 1 C Coupler Parameter Test Conditions Symbol Value Unit Total power dissipation T amb 25C P tot 25 mw Operating temperature range T amb 55 to +85 C Storage temperature range T stg 55 to +1 C Soldering temperature 2 mm from case, t 5 s T sd 26 C 2 (9) Rev. A5, 8 Jun 99
3 Electrical Characteristics (T amb = 25 C) Input (Emitter) TCST11. up to TCST23. Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 6 ma V F V Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 A V ECO 7 V Collector dark current V CE = 25 V, I F =, E = I CEO 1 na Coupler Parameter Test Conditions Type Symbol Min. Typ. Max. Unit Current transfer ratio V CE = 5 V, TCST113, CTR 1 2 % I F = 2 ma TCST213 TCST122, CTR 5 1 % TCST222 TCST13, CTR % TCST23 Collector current V CE = 5 V, TCST113, I C 2 4 ma I F = 2 ma TCST213 TCST122, I C 1 2 ma TCST222 TCST13, I C.25.5 ma TCST23 Collector emitter I F = 2 ma, TCST113, V CEsat.4 V saturation voltage I C = 1 ma TCST213 I F = 2 ma, TCST122, V CEsat.4 V I C =.5 ma TCST222 I F = 2 ma, TCST13, V CEsat.4 V I C =.1 ma TCST23 Resolution, path of the I Crel = 1 to 9% TCST113, s.6 mm shutter crossing the TCST213 radiant sensitive zone TCST122, s.4 mm TCST222 TCST13, TCST23 s.2 mm Rev. A5, 8 Jun 99 3 (9)
4 TCST11. up to TCST23. Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Turn-on time V S = 5 V, I C = 2 ma, R L = 1 (see figure 1) t on 1. s Turn-off time t off 8. s I F I F + 5 V I C = 2 ma; adjusted through input amplitude I F R G = 5 t p T =.1 t p = 5 s I C t p t Channel I 1% 9% Channel II Figure 1. Test circuit, saturated operation Oscilloscope R L 1 M C L 2 pf 1% t r t t d t s t f t on t off t p t d t r t on (= t d + t r ) pulse duration delay time rise time turn-on time t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 2. Switching times 4 (9) Rev. A5, 8 Jun 99
5 TCST11. up to TCST23. Typical Characteristics (T amb = 25 C, unless otherwise specified) 4 1 P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode I CEO Collector Dark Current, with open Base ( na ) V CE =25V I F = T amb Ambient Temperature ( C ) T amb Ambient Temperature ( C ) Figure 3. Total Power Dissipation vs. Ambient Temperature Figure 6. Collector Dark Current vs. Ambient Temperature V CE =5V I F Forward Current ( ma ) I C Collector Current ( ma ) V F Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage I F Forward Current ( ma ) Figure 7. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =2mA T amb Ambient Temperature ( C ) 1 I C Collector Current ( ma ) I F =5mA 2mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage Rev. A5, 8 Jun 99 5 (9)
6 TCST11. up to TCST23. CTR Current Transfer Ratio ( % ) V CE =5V I F Forward Current ( ma ) Figure 9. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) Figure 1. Turn on / off Time vs. Collector Current t on t off 1 I Crel Relative Collector Current A=1mm s s Displacement ( mm ) Figure 11. Relative Collector Current vs. Displacement I Crel Relative Collector Current A=.5mm s s Displacement ( mm ) Figure 12. Relative Collector Current vs. Displacement I Crel Relative Collector Current A=.25mm s s Displacement ( mm ) Figure 13. Relative Collector Current vs. Displacement 6 (9) Rev. A5, 8 Jun 99
7 TCST11. up to TCST23. Dimensions of TCST1.. in mm Rev. A5, 8 Jun 99 7 (9)
8 TCST11. up to TCST23. Dimensions of TCST2.. in mm (9) Rev. A5, 8 Jun 99
9 Ozone Depleting Substances Policy Statement TCST11. up to TCST23. It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Rev. A5, 8 Jun 99 9 (9)
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