2016 General Europractice MPW runs Schedule and Prices
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1 2016 General Europractice MPW runs Schedule and s Accessible for universities, research institutes and companies Version v3 ON Semiconductor (formerly AMIS) J F M A M J J A S O N D ON Semi 0.7µ C07M-D 2M/1P & ON Semi 0.7µ C07M-A 2M/1P/PdiffC/HR ON Semi 0.5µ CMOS EEPROM C5F & C5N ON Semi 0.35µ C035U 4M (3M & 5M optional) only thick top metal ON Semi 0.7µ C07M-I2T V - 2M & 3M options ON Semi 0.35µ C035 - I3T80U 80 V 4M - 3M optional (5M on special request) ON Semi 0.35µ C035 - I3T50U 50 V 4M - 3M optional (5M on special request) ON Semi 0.35µ C035 - I3T50U (E) 50 V 4M - 3M optional (5M on special request) ON Semi 0.35µ C035 - I3T25U 3.3/25 V 4M (3M & 5M optional) only thick top metal ONC18MS (0.18 µm - 1.8/3.3 V - 15V DMOS - 5LM - MiMC ESD - HiR - EPI) ONC18MS-LL (=ONC18MS + High Vt) ONC18HPA (= ONC18MS + DNW + Zener + Stacked MiMC + Native Dev + Schottky) ONC18-4T 45/70V HV CMOS ams J F M A M J J A S O N D ams 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO ams 0.35µ CMOS C35OPTO 4M/2P/5V IO ams 0.35µ HV CMOS H35B4D3 120V 4M ams 0.35µ SiGe-BiCMOS S35 4M/4P ams 0.18µ CMOS C18 6M/1P/MIM/1.8V/5V ams 0.18µ HV CMOS H18 50V/20V/5V/1.8V/ 6M/MIM Bottom Anti Reflective Coating (BARC) Diode for ams 0.35µ CMOS C35OPTO 4M/2P/5V IO Wafer Level Chip Scale Package for ams 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO IHP J F M A M J J A S O N D IHP SGB25V 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V IHP SGB25VGD 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V + RF HV-LDMOS GD-Module 22V IHP SG25H1 0.25µ SiGe:C Ft/Fmax=190GHz/220GHz 5M/MIM IHP SG25H3P 0.25µ Complementary SiGe:C Ft/Fmax (npn)110/180ghz / (pnp)90/120ghz 31 5M/MIM IHP SG25H3 0.25µ SiGe:C Ft/Fmax= 110/180GHz 5M/MIM IHP SG25H4 0.25µ SiGe:C Ft/Fmax= 200/220GHz 5M/MIM SG25H_EPIC (based on SG25H4) 31 IHP SG13S SiGe:C Bipolar/Analog/CMOS Ft/Fmax= 250/300GHz 7M/MIM IHP SG13C SiGe:C CMOS 7M/MIM IHP SG13G2 SiGe:C Bipolar/Analog Ft/Fmax= 300/500GHz 7M/MIM IHP SG25 PIC (Photonics, Ge Photo-diode, BEOL) 30 IHP BEOL SG25 (M1 and Metal Layers Above) + RF-MEMS + LBE 30 IHP BEOL SG13 (M1 and Metal Layers Above) + 27 LBE + Cu Bumping available for all IHP technologies with extra charge, limited to 200 bumps X-FAB J F M A M J J A S O N D XH µ HV NVM CMOS E-FLASH * XT µ HV SOI CMOS ** XS µ OPTO*** 14
2 * Process modules included : LPMOS, ISOMOS, NVM, HVMOS, DMOS, MIM, MRPOLY, SCHOTTKY, OPT3, LVT, FLASH, MET3, METMID, MET4, PHOTODIO. Other process modules are optional. ** Process modules included : LP5MOS, HRPOLY, MIM, 1XN, 1XP, HVN, MET4, HVP, HWC, DTI, MET3, METMID, NBUR. Other process modules are optional. *** Process modules to be announced soon TSMC J F M A M J J A S O N D TSMC 0.18 CMOS Logic or 6 3,24 9,30 13,27 11,28 8,22 6,20 3,24 7,21 5,19 2,23 7 TSMC 0.18 CMOS High Voltage Mixed-Signal (CV018LD 1.8/3.3/32V) TSMC 0.18 CMOS High Voltage BCD Gen (1.8V/5V...70V) TSMC 0.13 CMOS Logic or or Low Power (8-inch) TSMC 0.13 CMOS Logic or or Low Power (12-inch) TSMC 90nm CMOS Logic or or Low Power TSMC 65nm CMOS Logic or 9 2, ,29 3, ,30 or Low Power TSMC 40nm CMOS Logic or or Low Power (no triple 3, gate oxide) TSMC 28nm CMOS Logic, HPL (HKMG) (make reservation months before deadline) TSMC 28nm CMOS Logic, LP (SION) (make reservation months before deadline) Data in RED are preliminary scheduled UMC J F M A M J J A S O N D UMC L180 Logic GII UMC L180 Mixed-Mode/RF UMC L180 Logic Low Leakage UMC L180 EFLASH Logic GII UMC CIS180 Image Sensor 1P4M CONV diode 4 17 UMC CIS180 Image Sensor 2P4M ULTRA diode 4 17 UMC CIS11 image sensor UMC L130 Logic UMC L130 Mixed-Mode/RF UMC L110AE Logic/Mixed-Mode/RF UMC L65N Logic/Mixed-Mode/RF - SP 8 ** 21 * 2 ** 20 * 1 ** 19 * 31 ** 5 UMC L65N Logic/Mixed-Mode/RF - LL 8 21 * 2 20 * 1 19 * 31 5 options regular runs Core IO MIM topmetal special remarks UMC L180 Logic GII 1.8V 3.3V 1fF 8kA - Max. 1P6M Redistribution and bumping on request UMC L180 Mixed-Mode/RF 1.8V 3.3V 1fF 8kA/20kA Redistribution and bumping on Max. 1P6M request. UMC L180 Logic Low Leakage 1.8V 3.3V / 8kA - Max. 1P6M Cannot be combined with Logic GII UMC L180 EFLASH logic GII 1.8V 3.3V / 8kA - Max. 2P6M Please get in touch with imec for the EEFLASH macro information. UMC CIS18 CONV 1.8V 3.3V 1fF 5kA Max.1P4M Colorfilters and microlenses included UMC CIS18 ULTRA 1.8V 3.3V 1fF 5kA Max.2P4M Colorfilters and microlenses included. Ultra diode is pinned. PIP capacitor possible. UMC CIS11 - Image Sensor - 2P4M 1.5V 3.3V 1Ff 5kA Colorfilters and microlenses included. Max. 2P4M PIP capacitor possible. UMC L130 Logic 1.2V 3.3V 1fF/1.5fF/2fF 8kA Two types (out of 3) of devices can be Max. 1P8M2T combined: HS,LL, SP. Redistr. to Al. UMC L130 Mixed-Mode/RF 1.2V 3.3V 1fF/1.5fF/2fF 8kA/20kA Two types (out of 3) of devices can be Max. 1P8M2T combined: HS,LL, SP. Redistr. to Al. UMC L110AE Logic/Mixed-Mode/RF 1.2V 1.8V/2.5V/3.3V/5V 1fF/1.5fF/2fF 8kA/12kA/20kA/40kA Metalization is Aluminium. 5V device Max. 1P8M possible! HS,LL,SP can be combined. Metallization recommendation on request. Redistribution to Aluminium. UMC L65N Logic/Mixed-Mode/RF - SP 1.0V, 1.8V/2.5V/ 8kA/32.5kA * = 32kA topmetal, LVT, MIM in 2fF 1.1V 2.5V_OD3.3V/3.3V Max. 1P10M development. 2.5V_OD3.3V not available. ** = 3.3V not available. Please check with us before tapeout. UMC L65N Logic/Mixed-Mode/RF - LL 1.2V 1.8V/2.5V/ 2.5V_OD3.3V/3.3V 2fF 8kA/32.5kA Max. 1P10M Metallization recommendation on request. Redistribution to Aluminium.
3 * = 32kA topmetal in development. Please check with us before tapeout. GLOBALFOUNDRIES J F M A M J J A S O N D GLOBALFOUNDRIES 55 nm LPe/LPx- NVM/LPx-RF GLOBALFOUNDRIES 40 nm LP/LP- RF/RF-mmWave GLOBALFOUNDRIES 28 nm SLP/SLP- RF/HPP GLOBALFOUNDRIES 22 nm FDX 5 Data in RED are preliminary scheduled MEMSCAP J F M A M J J A S O N D METALMUMPS 2 PolyMUMPS SOIMUMPS PIEZOMUMPS epixfab-imec J F M A M J J A S O N D epixfab-imec SiPhotonics Passives 5 15 epixfab-imec SiPhotonics ISIPP25G ISIPP25G = advanced passives + Modulator + Detector ISIPP25G+ = ISIPP25G + LPAS + M2 + edge coupler epixfab-leti J F M A M J J A S O N D epixfab-leti SiPhotonics Passives + Heater Micralyne J F M A M J J A S O N D Micralyne MicraGEM-Si 13 Teledyne Dalsa J F M A M J J A S O N D Teledyne Dalsa MIDIS General Europractice MPW runs list s are valid for MPW runs starting after 1 January 2016 Accessible for universities, research institutes and companies s and conditions may change at any time without prior notice price : normal price price : only applies to EUROPRACTICE registered (who paid their annual full membership fee) Academic and Research Members from all 28 EU countries and Albania, Armenia, Azerbaijan, Belarus, Bosnia-Herzegovina, Georgia, Iceland, Israel, Liechtenstein, Former Yugoslav Republic of Macedonia, Moldova, Montenegro, Norway, Russia, Switzerland, Turkey, Serbia and Ukraine who submit designs for educational or publicly funded research use only s are given for the delivery of unpackaged, untested prototypes. Encapsulation and testing will be charged separately. Number of prototypes OnSemi, XFAB : 30 samples ams, IHP : 40 samples UMC : >45 samples TSMC : 8-inch : 40 samples, 12-inch : 100 samples Imec SiPhotonics passives :25 samples, ISIPP25G+ : 20 samples miniphotonics : 10 samples MEMSCAP : 15 samples GLOBALFOUNDRIES : 50 samples If you need more prototype samples, please ask for a quotation Plots You can order plots/pdf of your designs - first plot/pdf costs 50 euro - next plots cost 20 euro each Packaging : see separate prices and available packages PRICES IN EURO ams /mm 2 /mm 2 ams 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO ams 0.35µ CMOS C35OPTO 4M/2P/5V IO ams 0.35µ HV CMOS H35B4D3 120V 4M ams 0.35µ SiGe-BiCMOS S35 4M/4P ams 0.18µ CMOS C18 6M/1P/MIM/1.8V/5V ams 0.18µ HV CMOS H18 6M/50V/20V/5V/1.8V/MIM BARC Diode for ams 0.35µ CMOS C35OPTO 4M/2P/5V IO One-off fee of One-off fee of Wafer Level Chip Scale Package for ams 0.35µ CMOS C35B4C3 One-off fee of 6150 One-off fee of 6150
4 ON Semiconductor (formerly AMIS) /mm 2 /mm 2 ON Semi 0.7µ C07M-D 2M/1P ON Semi 0.7µ C07M-A 2M/1P/PdiffC/HR ON Semi 0.5µ CMOS EEPROM C5F & C5N 200 mm ON Semi 0.35µ C035U 4M (default) including analog options ON Semi 0.35µ C035U 3M (optional) including analog options ON Semi 0.35µ C035U 5M (optional) including analog options ON Semi 0.7µ C07M-I2T V - 2M ON Semi 0.7µ C07M-I2T V - 3M ON Semi 0.35µ C035 - I3T80U 80 V 3M ON Semi 0.35µ C035 - I3T80U 80 V 4M ON Semi 0.35µ C035 - I3T80U 80 V 5M ON Semi 0.35µ C035 - I3T50U (or E) 50 V 3M ON Semi 0.35µ C035 - I3T50U (or E) 50 V 4M ON Semi 0.35µ C035 - I3T50U (or E) 50 V 5M ON Semi 0.35µ C035 I3T25U 3.3/25 V 3M (optional) ON Semi 0.35µ C035 I3T25U 3.3/25 V 4M (default) ON Semi 0.35µ C035 I3T25U 3.3/25 V 5M (optional) ONC18MS 0.18 µm - 1.8/3.3 V - 15V DMOS - 5LM - MiMC - ESD - HiR - EPI 1, ,050 1 ONC18MS-LL (=ONC18MS + High Vt) 1, ,195 1 ONC18HPA (= ONC18MS + DNW + Zener + Stacked MiMC + Native Dev + Schottky) 1, ,290 1 ON 0.18 µm I4T 40/75 V - 5LM DTI (=ONC18MS + 30V + 45V + 70V DMOS) 1, ,480 1 IHP /mm 2 /mm 2 IHP SGB25V 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V IHP SGB25VGD 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V + RF HV-LDMOS GD- Module 22V IHP SG25H1 0.25µ SiGe:C Ft/Fmax=190GHz/220GHz 5M/MIM IHP SG25H3P 0.25µ Complementary SiGe:C Ft/Fmax (npn)110/180ghz / (pnp)90/120ghz 5M/MIM IHP SG25H3 0.25µ SiGe:C Ft/Fmax= 110/180GHz 5M/MIM IHP SG25H4 0.25µ SiGe:C Ft/Fmax= 200/220GHz 5M/MIM SG25H_EPIC (based on SG25H4) IHP SG13G2 SiGe:C Bipolar/Analog Ft/Fmax= 300/500GHz 7M/MIM IHP SG13S SiGe:C Bipolar/Analog/CMOS Ft/Fmax= 250/300GHz 7M/MIM IHP SG13C SiGe:C CMOS 7M/MIM BEOL SG25 (M1 and Metal Layers Above, for passive structures) BEOL SG13 (M1 and Metal Layers Above, for passive structures) IHP SG25 PIC (Photonics devices, Ge Photo-diode, BEOL) bumping for all IHP technologies One-off fee of One-off fee of localized back side etching for all IHP technologies (per design) One-off fee of 5000 One-off fee of 2500 RF-MEMS switch for SG13 (IP) One-off fee of One-off fee of 2500 TSV to ground (SG25H4) One-off fee of 5000 One-off fee of 2500 X-FAB /mm2 /mm 2 X-FAB XH µ HV NVM CMOS E-FLASH (MET3, METMID) , 11 1, X-FAB XH µ HV NVM CMOS E-FLASH (MET3, MET4, METMID) , 11 1, X-FAB XH µ HV NVM CMOS E-FLASH (MET3, MET4, MET5, METMID) , 11 1, X-FAB XT µ HV SOI CMOS (MET3, METMID) , 11 1, X-FAB XT µ HV SOI CMOS (MET3, MET4, METMID) , 11 1, X-FAB XT µ HV SOI CMOS (MET3, MET4, MET5, METMID) , 11 1, XS µ OPTO Tbd tbd TSMC /mm 2 /mm 2 All TSMC technologies Upon request 7 Upon request 7 UMC /block /block UMC L180 Logic GII, Mixed-Mode/RF, Logic Low Leakage UMC L180 CIS 1P4M CONV or 2P4M ULTRA UMC L180 EFLASH Logic GII UMC L130 Logic, Mixed-Mode/RF UMC L110AE Logic/Mixed-Mode/RF UMC L110 CIS UMC 65nm Logic, MM/technologies GLOBALFOUNDRIES /mm 2 /mm 2 GLOBALFOUNDRIES 55 nm LPx-NVM/LPx-RF GLOBALFOUNDRIES 55 nm LPe GLOBALFOUNDRIES 40 nm LP/LP-RF/RF-mmWave GLOBALFOUNDRIES 28 nm SLP-RF/HPP GLOBALFOUNDRIES 28 nm SLP GLOBALFOUNDRIES 22 nm FDX
5 MEMSCAP /block /block METALMUMPS, PolyMUMPS, SOIMUMPS, PIEZOMUMPS 10x10mm Optional Postprocessing : see pricelist on Minimal size dies (die size design size) Larger size dies or undiced wafer (die = design + cleared perimeter) Un-diced 200mm wafer epixfab-imec SiPhotonics Passives 1 block 6 x 3 mm blocks - vertical 6 x 6.2 mm blocks - horizontal 12.2 x 3 mm blocks 12.2 x mm 25 additional compact dies additional large dies NA NA additional un-diced 200mm wafer NA NA Cladding Included Included Included Included Included Included High dose WG epixfab-imec SiPhotonics ISSIP25G+ miniphotonics (10 samples) Regular (20 samples) 2.5 mm x 2.5 mm mm x 2.5 mm mm x 5.15 mm mm x 5.15 mm mm x mm additional dies epixfab-leti SiPhotonics Passives 2 to 4 blocks of 7.0 x 7.6mm each on the run 5 or more blocks of 7.0 x 7.6mm each on the run Regular 7.0 x 3.7 mm x 7.6 mm Larger sizes Contact us Contact us Contact us Contact us Variable dose, metrology, dicing, fabrication report, final resist cladding Included Included Included included epixfab-leti SiPhotonics Passives + heater 2 to 4 blocks of 7.0 x 7.6mm each on the run 5 or more blocks of 7.0 x 7.6mm each on the run 1.7 x 3.7 mm NA NA miniphotonics (15 samples) 3.7 x 3.7 mm NA NA 5.2 x 3.7 mm NA NA Regular (50 samples) 3.4 x 3.7 mm x 3.7 mm Larger sizes Contact us Contact us Contact us Contact us Variable dose, metrology, dicing, fabrication report, final resist cladding Included Included Included included Micralyne (prices only for academia) MicraGEM-SI Teledyne Dalsa (prices only for academia) MiDIS 4.0 mm x 4.0 mm 4800 Canadian dollar NA 4.0 mm x 8.0 mm 7200 Canadian dollar NA 8.0 mm x 8.0 mm Canadian dollar NA 4.0 mm x 4.0 mm 8000 Canadian dollar NA 4.0 mm x 8.0 mm Canadian dollar NA 8.0 mm x 8.0 mm Canadian dollar NA
6 Notes 1) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 10 mm 2 2) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 5 mm 2 3) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 8 mm 2 4) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 7 mm 2 5) = per block of 5x5mm needed to fit the design in 6) = per block of 4x4mm needed to fit the design in 7) can be calculated through 8) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 0.8 mm 2 9) = per submitted design (no size limit, bumping limited to 200 bumps) 10) Cost for extra services like structures release, subdicing, please refer to 11) Area will be rounded upwards to the next mm 2 (eg mm 2 will be charged as 13 mm 2 ) 12) = area (mm 2 ) * price/mm 2 with min. fabrication cost equivalent to 9 mm 2 Any edge length between 1.5 mm to 12.5 mm is possible. The mentioned die size is referred to the Pre-Shrink die size Contacts imec, Belgium (C. Das, tel: , fax: , [email protected]) Fraunhofer IIS, Germany (W. McKinley, tel : , fax: , [email protected])
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