Parameter Min. Typ. Max. Units. Frequency Range GHz. Minimum Insertion Loss db. Dynamic 38 GHz 26 db
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1 EWA51ZZ 3-5 GHz GaAs MMIC September 29 Rev 4 Bare Die Features Broadband Performance: 3 to 5 GHz Dynamic Range: 26 db, typical Input IP3: +13 dbm, typical (any attenuation) Dual Voltage Control: -1.5 to V ESD Protection Bias Circuitry 1% RF and DC tested Die Size: 1.5 x 1.32 x.1mm RoHS Compliant Description The Endwave EWA51ZZ is a GaAs phemt broadband voltage variable attenuator MMIC. The high linearity voltage variable attenuator provides 26 db dynamic range at 38 GHz with +13 dbm input IP3 at any attenuation. This device has integrated ESD protection bias circuitry and can be used for a wide range of applications from defense electronics to commercial communication systems. All die are 1% DC and RF tested and visually inspected to Mil-Std-883 Method 21. Electrical Characteristics (Temperature = +25 C) Device Photo Block Diagram Parameter Min. Typ. Max. Units Frequency Range 3 5 GHz Minimum Insertion Loss db Dynamic 38 GHz 26 db Input Return Loss (over dynamic range) 7 db Output Return Loss (over dynamic range) 7 db Input IP3 (any attenuation) 13 dbm Gain control Voltage 1 (Vctrl 1,2) -1.5 V Note 1: Max attenuation for Vctrl 1, 2 = volts Endwave Corporation 13 Baytech Drive San Jose CA Endwave Page 1 of 5
2 EWA51ZZ 3-5 GHz GaAs MMIC September 29 Rev GHz 3 5 GHz Bare Die V_V.5V_.5V.7V_.7V 44-5 GHz V_V.5V_.5V.7V_.7V 44 5 GHz V_V.5V_.5V.7V_.7V V_V.5V_.5V.7V_.7V Endwave Corporation 13 Baytech Drive San Jose CA Endwave Page 2 of 5
3 EWA51ZZ 3-5 GHz GaAs MMIC September 29 Rev GHz GHz Bare Die V_V.5V_.5V.7V_.7V 3 37 GHz V_V.5V_.5V.7V_.7V 3 37 GHz V_V.5V_.5V.7V_.7V V_V.5V_.5V.7V_.7V Endwave Corporation 13 Baytech Drive San Jose CA Endwave Page 3 of 5
4 EWA51ZZ Assembly Drawing 3-5 GHz GaAs MMIC September 29 Rev 4 Electrostatic Sensitive Device Observe Handling Precautions Bare Die Outline Drawing To Attenuation Vcntrl1 EWA51ZZ To Attenuation Vcntrl2 EWA51ZZ Electrostatic Sensitive Device Observe Handling Precautions Bond Pad #1 - RF In Bond Pad #2 - RF Out Bond Pad #3 - Vcntrl2 Bond Pad #4 - Vcntrl1 Dimensions in mm [inches]. Die thickness is.4. Bond Pad and backside metallization is gold. Endwave Corporation 13 Baytech Drive San Jose CA Endwave Page 4 of 5
![Precautions Bond Pad #1 - RF In Bond Pad #2 - RF Out Bond Pad #3 - Vcntrl2 Bond Pad #4 - Vcntrl1 Dimensions in mm [inches].](/docs-images/46/21235728/images/page_4.jpg "Die thickness is.4. Bond Pad and backside metallization is gold.")
5 EWA51ZZ 3-5 GHz GaAs MMIC September 29 Rev 4 Bare Die RF Input Power (min attenuation) Control Voltage (Vctrl1, 2) Storage Temperature Operating Temperature Typical Application LO Input 38 GHz Pin = dbm Mixer IF Inputs Absolute Maximum Ratings Band Pass Filter +25 dbm -2.5 to V -65 to +15ºC -4 to +85ºC EWA51ZZ EWP412ZZ Support Documentation Support documentation including Assembly Notes, Application Notes and Qualification Procedures can be found on our website at. RF Output 4 GHz Ordering Information Part Number Description EWA51ZZ EWA51ZZ-EV RoHS compliant bare die in waffle or gel packs EWA51ZZ in a connectorized test fixture Endwave Corporation 13 Baytech Drive San Jose CA Endwave Page 5 of 5
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Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8
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