Pin Connections and Package Marking. GUx

Size: px
Start display at page:

Download "Pin Connections and Package Marking. GUx"

Transcription

1 Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-89x Series Features Unique Configurations in Surface Mount Packages Add Flexibility Save Board Space Reduce Cost Switching Low Capacitance Low Resistance at Low Current Low Failure in Time (FIT) Rate [] Matched Diodes for Consistent Performance Better Thermal Conductivity for Higher Power Dissipation Lead-free Option Available Note:. For more information see the Surface Mount PIN Reliability Data Sheet. Pin Connections and Package Marking 3 GUx Notes:. Package marking provides orientation, identification, and date code.. See lectrical Specifications for appropriate package marking. 6 5 Description/Applications The HSMP-389x series is optimized for switching applications where low resistance at low current and low capacitance are required. The HSMP-89x series products feature ultra low parasitic inductance. These products are specifically designed for use at frequencies which are much higher than the upper limit for conventional PIN diodes.

2 Package Lead Code Identification, SOT-3/3 (Top View) Package Lead Code Identification, SOT-33 (Top View) Package Lead Code Identification, SOT-363 (Top View) SINGL SRIS SINGL SRIS UNCONNCTD TRIO 6 5 DUAL SWITCH MODL 6 5 # COMMON ANOD # COMMON CATHOD B COMMON ANOD C COMMON CATHOD 3 L LOW INDUCTANC SINGL R SRIS SHUNT PAIR 6 5 #3 # F UNCONNCTD PAIR #5 DUAL ANOD 89 DUAL ANOD 89B 3 T HIGH FRQUNCY SRIS U 3 V Absolute Maximum Ratings [] T C = +5 C Symbol Parameter Unit SOT-3/3 SOT-33/363 I f Forward Current ( µs Pulse) Amp P IV Peak Inverse Voltage V T j Junction Temperature C 5 5 T stg Storage Temperature C -65 to 5-65 to 5 θ jc Thermal Resistance [] C/W 5 5 SD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Notes:. Operation in excess of any one of these conditions may result in permanent damage to the device.. T C = +5 C, where T C is defined to be the temperature at the package pins where contact is made to the circuit board.

3 3 lectrical Specifications, T C = 5 C, each diode Package Minimum Maximum Maximum Part Number Marking Lead Breakdown Series Resistance Total Capacitance HSMP- Code Code Configuration Voltage V BR (V) R S (Ω) C T (pf) 389 G [] Single G [] Series 3893 G3 [] 3 Common Anode 389 G [] Common Cathode 3895 G5 [] 5 Unconnected Pair 389B G [] B Single 389C G [] C Series 389 G3 [] Common Anode 389F G [] F Common Cathode 389L GL [] L Unconnected Trio 389R S [] R Dual Switch Mode 389T Z [] T Low Inductance Single 389U GU [] U Series-Shunt Pair 389V GV [] V High Frequency Series Pair Test Conditions V R = V BR I F = 5 ma V R = 5 V Measure f = MHz f = MHz I R µa Notes:. Package marking code is white.. Package is laser marked. High Frequency (Low Inductance, 5 MHz 3 GHz) PIN Diodes Minimum Maximum Typical Maximum Typical Part Package Breakdown Series Total Total Total Number Marking Voltage Resistance Capacitance Capacitance Inductance HSMP- Code [] Configuration V BR (V) R S (Ω) C T (pf) C T (pf) L T (nh) 89x GA Dual Anode Test Conditions V R = V BR I F = 5 ma f = MHz V R = 5 V f=5 MHz Measure V R = 5 V f = MHz 3 GHz I R µa Note:. SOT-3 package marking code is white; SOT-33 is laser marked. Typical Parameters at T C = 5 C Part Number Series Resistance Carrier Lifetime Total Capacitance HSMP- R S (Ω) τ (ns) C T (pf) 389x 5 V Test Conditions I F = ma I F = ma f = MHz I R = 6 ma

4 HSMP-389x Series Typical Performance, T C = 5 C, each diode RF RSISTANC (OHMS)... I F FORWARD BIAS CURRNT (ma) Figure. Total RF Resistance at 5 C vs. Forward Bias Current. TOTAL CAPACITANC (pf) MHz.5 GHz. 8 6 V R RVRS VOLTAG (V) Figure. Capacitance vs. Reverse Voltage. INPUT INTRCPT POINT (dbm) Diode Mounted as a Series Attenuator in a 5 Ohm Microstrip and Tested at 3 MHz 85 3 I F FORWARD BIAS CURRNT (ma) Figure 3. nd Harmonic Input Intercept Point vs. Forward Bias Current. T rr RVRS RCOVRY TIM (ns) 6 8 V R = V V R = 5V V R = V FORWARD CURRNT (ma) Figure. Typical Reverse Recovery Time vs. Reverse Voltage. I F FORWARD CURRNT (ma). 5 C 5 C 5 C V F FORWARD VOLTAG (V) Figure 5. Forward Current vs. Forward Voltage. Typical Applications for Multiple Diode Products 3 3 ON OFF +V V b b b3 5 6 RF in RF out Figure 6. HSMP-389L used in a SP3T Switch. Figure 7. HSMP-389L Unconnected Trio used in a Dual Voltage, High Isolation Switch.

5 5 Typical Applications for Multiple Diode Products (continued) ON OFF +V +V RF out RF in 3 RF out 3 RF in Figure 8. HSMP-389L Unconnected Trio used in a Positive Voltage, High Isolation Switch. Figure 9. HSMP-389T used in a Low Inductance Shunt Mounted Switch. Bias Xmtr C Ant λ C Rcvr Bias Xmtr Ant λ Rcvr Bias PA bias Xmtr Antenna λ HSMP-389V LNA HSMP-389U λ Rcvr Figure. HSMP-389U Series/Shunt Pair used in a 9 MHz Transmit/Receive Switch. Figure. HSMP-389V Series/Shunt Pair used in a.8 GHz Transmit/Receive Switch.

6 6 Typical Applications for Multiple Diode Products (continued) RF COMMON RF COMMON RF RF RF RF BIAS BIAS BIAS BIAS Figure. Simple SPDT Switch, Using Only Positive Current. Figure 3. High Isolation SPDT Switch, Dual Bias. RF COMMON RF COMMON BIAS RF RF RF BIAS RF Figure. Switch Using Both Positive and Negative Bias Current. Figure 5. Very High Isolation SPDT Switch, Dual Bias.

7 7 Typical Applications for HSMP-89x Low Inductance Series Microstrip Series Connection for HSMP-89x Series In order to take full advantage of the low inductance of the HSMP-89x series when using them in series applications, both lead and lead should be connected together, as shown in Figure OHM MICROSTRIP LINS PAD CONNCTD TO GROUND BY TWO VIA HOLS Figure 8. Circuit Layout..5 nh.5 nh Co-Planar Waveguide Shunt Connection for HSMP-89x Series Co-Planar waveguide, with ground on the top side of the printed circuit board, is shown in Figure. Since it eliminates the need for via holes to ground, it offers lower shunt parasitic inductance and higher maximum attenuation when compared to a microstrip circuit. Co-Planar Waveguide Groundplane Center Conductor Groundplane HSMP-89x Figure 6. Internal Connections..3 pf.3 nh Figure. Circuit Layout..3 nh Figure 9. quivalent Circuit..3 pf Figure 7. Circuit Layout..75 nh Microstrip Shunt Connections for HSMP-89x Series In Figure 8, the center conductor of the microstrip line is interrupted and leads and of the HSMP-89x diode are placed across the resulting gap. This forces the.5 nh lead inductance of leads and to appear as part of a low pass filter, reducing the shunt parasitic inductance and increasing the maximum available attenuation. The.3 nh of shunt inductance external to the diode is created by the via holes, and is a good estimate for.3" thick material. quivalent Circuit Model HSMP-389x Chip* R s.5 Ω R j C j. pf* * Measured at - V R T =.5 + R j C T = C P + C j R j = Ω I.9 I = Forward Bias Current in ma * See AN for package models Figure. quivalent Circuit. A SPIC model is not available for PIN diodes as SPIC does not provide for a key PIN diode characteristic, carrier lifetime.

8 8 Assembly Information Figure. PCB Pad Layout, SOT-363. (dimensions in inches) Figure 3. PCB Pad Layout, SOT-33. (dimensions in inches) SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT package, will reach solder reflow temperatures faster than those with a greater mass. Agilent s diodes have been qualified to the time-temperature profile shown in Figure 6. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 35 C. These parameters are typical for a surface mount assembly process for Agilent diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder DIMNSIONS IN inches mm.3.8 Figure. PCB Pad Layout, SOT TMPRATUR ( C) Preheat Zone Figure 6. Surface Mount Assembly Profile. Reflow Zone Cool Down Zone T MAX 8 3 TIM (seconds) DIMNSIONS IN inches mm Figure 5. PCB Pad Layout, SOT-3.

9 9 Package Dimensions Outline 3 (SOT-3) Outline SOT-33 (SC-7 3 Lead). (.).89 (.35).5 (.).37 (.5) DAT COD (X) PACKAG MARKING COD (XX).3 (.5) RF. DAT COD (X) PACKAG MARKING COD (XX) 3 X X X. (.55). (.7).65 (.). (.83). (.87). (.79) X X X.35 (.53).5 (.5).6 (.).5 (.8). (.8).78 (.7) TOP VIW 3.6 (.).8 (.).5 (.6).66 (.3). (.). (.). (.87).8 (.7).65 BSC (.5).3 RF..5 (.7) TYP.. (.).3 (.5) SID VIW. (.).85 (.33).69 (.7).5 (.8) ND VIW.5 (.).5 (.6). (.39).8 (.3) DIMNSIONS AR IN MILLIMTRS (INCHS).3 (.). (.). (.8). (.) DIMNSIONS AR IN MILLIMTRS (INCHS) Outline 3 (SOT-3) Outline SOT-363 (SC-7 6 Lead).9 (.36).78 (.3) DAT COD (X) PACKAG MARKING COD (XX).3 (.5) RF. DAT COD (X) PACKAG MARKING COD (XX) X X X. (.55). (.7).65 (.). (.83). (.87). (.79) X X X.35 (.53).5 (.5) 3.6 (.).5 (.8). (.8).78 (.7).5 (.).37 (.5). (.87).8 (.7).65 BSC (.5).5 (.7) TYP. 3.6 (.).8 (.).5 (.6).9 (.3). (.). (.).3 RF.. (.).85 (.33). (.).3 (.5) DIMNSIONS AR IN MILLIMTRS (INCHS).69 (.7).5 (.8).5 (.).5 (.6). (.39).8 (.3).3 (.). (.). (.8). (.) DIMNSIONS AR IN MILLIMTRS (INCHS) Package Characteristics Lead Material... Copper (SOT-33/363); Alloy (SOT-3/3) Lead Finish... Tin-Lead 85-5% Maximum Soldering Temperature... 6 C for 5 seconds Minimum Lead Strength... pounds pull Typical Package Inductance... nh Typical Package Capacitance....8 pf (opposite leads)

10 Ordering Information Specify part number followed by option. For example: HSMP - 389x - XXX Bulk or Tape and Reel Option Part Number; x = Lead Code Surface Mount PIN Option Descriptions -BLK = Bulk, pcs. per antistatic bag -TR = Tape and Reel, 3 devices per 7" reel -TR = Tape and Reel,, devices per 3" reel Tape and Reeling conforms to lectronic Industries RS-8, Taping of Surface Mounted Components for Automated Placement. For lead-free option, the part number will have the character "G" at the end, eg. -TRG for a K pc lead-free reel. Device Orientation RL For Outlines SOT-3, -33 TOP VIW mm ND VIW CARRIR TAP 8 mm ABC ABC ABC ABC USR FD DIRCTION COVR TAP Note: "AB" represents package marking code. "C" represents date code. For Outline SOT-3 For Outline SOT-363 TOP VIW mm ND VIW TOP VIW mm ND VIW 8 mm ABC ABC ABC ABC 8 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" represents date code. Note: "AB" represents package marking code. "C" represents date code.

11 Tape Dimensions and Product Orientation For Outline SOT-3 P D P P F W t D 9 MAX Ko 8 MAX 3.5 MAX A B CAVITY PRFORATION CARRIR TAP DSCRIPTION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DPTH PITCH BOTTOM HOL DIAMTR DIAMTR PITCH POSITION THICKNSS A B K P D D P W t 3.5 ±..77 ±.. ±.. ± ±..75 ± ±.3. ±..9 ±..8 ±..57 ±..39 ± ±..69 ± ±.5 DISTANC BTWN CNTRLIN CAVITY TO PRFORATION ( DIRCTION) CAVITY TO PRFORATION (LNGTH DIRCTION) F P 3.5 ±.5. ±.5.38 ±..79 ±. For Outline SOT-3 P P D P F W D t 9 MAX K 9 MAX A B CAVITY PRFORATION DSCRIPTION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DPTH PITCH BOTTOM HOL DIAMTR DIAMTR PITCH POSITION A B K P D D P 3.9 ±..8 ±..3 ±.. ± ±..75 ±..6 ±.. ±..5 ±..57 ± ±..69 ±. CARRIR TAP THICKNSS W t ± ±.5 DISTANC CAVITY TO PRFORATION ( DIRCTION) CAVITY TO PRFORATION (LNGTH DIRCTION) F P 3.5 ±.5. ±.5.38 ±..79 ±.

12 Tape Dimensions and Product Orientation For Outlines SOT-33, -363 P D P P C F W t (CARRIR TAP THICKNSS) D T t (COVR TAP THICKNSS) An K An A B CAVITY PRFORATION CARRIR TAP COVR TAP DISTANC ANGL DSCRIPTION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DPTH PITCH BOTTOM HOL DIAMTR DIAMTR PITCH POSITION THICKNSS TAP THICKNSS CAVITY TO PRFORATION ( DIRCTION) CAVITY TO PRFORATION (LNGTH DIRCTION) A B K P D D P. ±.. ±.. ±.. ± ±.5. ±..75 ±. W 8. ±.3 t.5 ±. C 5. ±. T t.6 ±. F 3.5 ±.5 P. ±.5 FOR SOT-33 (SC7-3 LAD) An 8 C MAX FOR SOT-363 (SC7-6 LAD) C MAX.9 ±..9 ±..7 ±..57 ± ±..57 ±..69 ±..35 ±.. ±.8.5 ±..5 ±..38 ±..79 ±. For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: + (8) 35-3 or (96) urope: +9 () 6 96 China: Hong Kong: (65) India, Australia, New Zealand: (65) Japan: (+8 3) (Domestic/International), or -6-8(Domestic Only) Korea: (65) Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 Taiwan: (65) Data subject to change. Copyright Agilent Technologies, Inc. Obsoletes March, N

13 This datasheet has been download from: Datasheets for electronics components.

Data Sheet. HSMP-382x, 482x. Surface Mount RF PIN Switch and Limiter Diodes. Features. Description/Applications

Data Sheet. HSMP-382x, 482x. Surface Mount RF PIN Switch and Limiter Diodes. Features. Description/Applications HSMP-382x, 482x Surface Mount RF PIN Switch and Limiter iodes ata Sheet escription/applications The HSMP-382x series is optimized for switch ing applications where ultra-low resistance is required. The

More information

MADP-000504-10720T. Non Magnetic MELF PIN Diode

MADP-000504-10720T. Non Magnetic MELF PIN Diode MADP-54-172T Features High Power Handling Low Loss / Low Distortion Leadless Low Inductance MELF Package Non-Magnetic Surface Mountable RoHS Compliant MSL 1 Package Style 172 Dot Denotes Cathode Description

More information

Agilent T-1 3 / 4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps Data Sheet

Agilent T-1 3 / 4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps Data Sheet Agilent T-1 3 / (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps Data Sheet HLMP-16, HLMP-161, HLMP-162, HLMP-1621 HLMP-16, HLMP-161, HLMP-36, HLMP-361 HLMP-365, HLMP-3651, HLMP-36, HLMP-361

More information

CLA4607-085LF: Surface Mount Limiter Diode

CLA4607-085LF: Surface Mount Limiter Diode DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold

More information

HDSP- HDSP- HDSP- HDSP-

HDSP- HDSP- HDSP- HDSP- 7.6 mm (.3 inch) Micro Bright Seven Segment Displays Technical Data HDSP-74x Series HDSP-75x Series HDSP-78x Series HDSP-A5x Series HDSP-A4x Series Features Available with Colon for Clock Display Compact

More information

Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series. MLN SurgeArray TM Suppressor. Description

Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series. MLN SurgeArray TM Suppressor. Description MLN SurgeArray TM Suppressor RoHS Description The MLN SurgeArray Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four

More information

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8 Product Description Sirenza Microdevices SGC-689Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides

More information

CLA Series: Silicon Limiter Diode Bondable Chips

CLA Series: Silicon Limiter Diode Bondable Chips DATA SHEET CLA Series: Silicon Limiter Diode Bondable Chips Applications LNA receiver protection Commercial and defense radar Features Established Skyworks limiter diode process High-power, mid-range,

More information

SM712 Series 600W Asymmetrical TVS Diode Array

SM712 Series 600W Asymmetrical TVS Diode Array SM712 Series 6W Asymmetrical TVS Diode Array RoHS Pb GREEN Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to from damage due to

More information

CAN bus ESD protection diode

CAN bus ESD protection diode Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1. Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package

More information

BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U

BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U BAS6... Silicon Switching Diode For highspeed switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAS6 BAS6W BAS6L BAS6V BAS6W BAS63W BAS6S BAS6U BAS67L4! $ # " "!,,,!,,!

More information

RClamp0504P RailClamp Low Capacitance TVS Array

RClamp0504P RailClamp Low Capacitance TVS Array - RailClamp Description RailClamps are low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected

More information

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified

More information

Medium power Schottky barrier single diode

Medium power Schottky barrier single diode Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated

More information

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High volume wireless systems

More information

BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W

BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W BAV7... Silicon Switching Diode For highspeed switching applications Common cathode configuration BAV7S / U: For orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified

More information

MASW-000823-12770T. HMIC TM PIN Diode SP2T 13 Watt Switch for TD-SCDMA Applications. Features. Functional Diagram (TOP VIEW)

MASW-000823-12770T. HMIC TM PIN Diode SP2T 13 Watt Switch for TD-SCDMA Applications. Features. Functional Diagram (TOP VIEW) Features Exceptional Loss = 0.35 db Avg @ 2025 MHz, 20mA Exceptional Loss = 0.50 db Avg @ 2025 MHz, 20mA Higher - Isolation = 31dB Avg @ 2025 MHz, 20mA Higher RF C.W. Input Power =13 W C.W.(-Ant Port)

More information

BAS70 series; 1PS7xSB70 series

BAS70 series; 1PS7xSB70 series BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

14.2 mm (0.56 inch) General Purpose Two Digit Seven Segment Displays Technical Data

14.2 mm (0.56 inch) General Purpose Two Digit Seven Segment Displays Technical Data 14.2 mm (0.56 inch) General Purpose Two Digit Seven Segment Displays Technical Data HDSP-52xE Series HDSP-52xG Series HDSP-52xY Series Features Industry Standard Size Industry Standard Pin-Out 15.24 mm

More information

SDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics

SDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics Description The SDC15 transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),

More information

ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323

ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323 Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4

More information

TQP4M3019 Data Sheet. SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch. Functional Block Diagram. Features. Product Description.

TQP4M3019 Data Sheet. SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch. Functional Block Diagram. Features. Product Description. Functional Block Diagram Product Description TriQuint s TQP4M3019 is a high power antenna switch in a single pole three throw (SP3T) configuration. The die utilizes TriQuint s PHEMT MMIC switch process

More information

PMEG3005EB; PMEG3005EL

PMEG3005EB; PMEG3005EL Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C Bulletin I075 rev. C 05/06 IR0530CSPTRPbF 0.5 Amp 30 Volt Features Ultra Low V F To Footprint Area Very Low Profile (

More information

Silicon PIN Photodiode

Silicon PIN Photodiode VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features 0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J

More information

uclamp0541z Ultra Small μclamp 1-Line ESD Protection

uclamp0541z Ultra Small μclamp 1-Line ESD Protection - Z-Pak TM Description μclamp TVS diodes are designed to protect sensitive electronics from damage or latch-up due to ESD. It is designed to replace 2 size multilayer varistors (MLVs) in portable applications

More information

Agilent AEDB-9140 Series Three Channel Optical Incremental Encoder Modules with Codewheel, 100 CPR to 500 CPR Data Sheet

Agilent AEDB-9140 Series Three Channel Optical Incremental Encoder Modules with Codewheel, 100 CPR to 500 CPR Data Sheet Agilent AEDB-9140 Series Three Channel Optical Incremental Encoder Modules with Codewheel, 100 CPR to 500 CPR Data Sheet Description The AEDB-9140 series are three channel optical incremental encoder modules

More information

SKY13370-374LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated

SKY13370-374LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated DATA SHEET SKY13370-374LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated Applications WiMAX 802.16 RF1 RF2 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems 50 Ω 50 Ω Features 50 Ω matched RF ports in all

More information

4N25 Phototransistor Optocoupler General Purpose Type

4N25 Phototransistor Optocoupler General Purpose Type 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an

More information

PMEG3015EH; PMEG3015EJ

PMEG3015EH; PMEG3015EJ Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

How To Make An Electric Static Discharge (Esd) Protection Diode

How To Make An Electric Static Discharge (Esd) Protection Diode Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device

More information

The quadrature signals and the index pulse are accessed through five 0.025 inch square pins located on 0.1 inch centers.

The quadrature signals and the index pulse are accessed through five 0.025 inch square pins located on 0.1 inch centers. Quick Assembly Two and Three Channel Optical Encoders Technical Data HEDM-550x/560x HEDS-550x/554x HEDS-560x/564x Features Two Channel Quadrature Output with Optional Index Pulse Quick and Easy Assembly

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1. Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for

More information

Features. Applications. Truth Table. Close

Features. Applications. Truth Table. Close ASSR-8, ASSR-9 and ASSR-8 Form A, Solid State Relay (Photo MOSFET) (0V/0.A/0Ω) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically

More information

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2 Features Functional Schematic High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost 4x4 mm, 20-lead PQFN Package 100% Matte

More information

PLx. Data Sheet. HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes. Features. Description. Pin Connections and Package Marking

PLx. Data Sheet. HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes. Features. Description. Pin Connections and Package Marking HSMS-286x Series Surface Mount Microwave Schottky etector iodes ata Sheet escription Avago s HSMS 286x family of C biased detector diodes have been designed and optim ized for use from 915 MHz to 5.8 GHz.

More information

MASW-007070-0001TB. GaAs SPST Switch, Absorptive, Single Supply, DC-4.0 GHz. Features. Pin Configuration 1,2,3,4. Description. Ordering Information

MASW-007070-0001TB. GaAs SPST Switch, Absorptive, Single Supply, DC-4.0 GHz. Features. Pin Configuration 1,2,3,4. Description. Ordering Information Features Operates DC - 4 GHz on Single Supply ASIC TTL / CMOS Driver Low DC Power Consumption 50 Ohm Nominal Impedance Test Boards are Available Tape and Reel are Available Lead-Free 4 x 6 mm PQFN Package

More information

Agilent AEDR-8300 Series Encoders Reflective Surface Mount Optical Encoder Data Sheet

Agilent AEDR-8300 Series Encoders Reflective Surface Mount Optical Encoder Data Sheet Agilent AEDR-8300 Series Encoders Reflective Surface Mount Optical Encoder Data Sheet Description The AEDR-8300 series is the smallest optical encoder employing reflective technology for motion control

More information

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted

More information

PMEG2020EH; PMEG2020EJ

PMEG2020EH; PMEG2020EJ Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

Gas Discharge Tube (GDT) Products CG5 and SL0902A Series. CG5 and SL0902A Series

Gas Discharge Tube (GDT) Products CG5 and SL0902A Series. CG5 and SL0902A Series Description Agency Approvals AGENCY AGENCY FILE NUMBER E128662 2 Electrode GDT Graphical Symbol Littelfuse Broadband Optimized SL0902A Series offers high surge ratings in a miniature package. Special design

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

1 Form A Solid State Relay

1 Form A Solid State Relay Form A Solid State Relay VOAT, VOAABTR FEATURES 9 S S DC S' 3 S' High speed SSR - t on /t off < 8 μs Maximum R ON. Isolation test voltage 3 V RMS Load voltage V Load current A DC configuration DIP- package

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tk SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μpc8tk is a silicon germanium carbon (SiGe:C) monolithic integrated circuit

More information

MADR-009190-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. 4. Functional Schematic. Features.

MADR-009190-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. 4. Functional Schematic. Features. Features High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Lead-Free SOIC-16 Plastic Package Halogen-Free Green Mold Compound

More information

Schottky barrier quadruple diode

Schottky barrier quadruple diode Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated

More information

SM Series 400W TVS Diode Array

SM Series 400W TVS Diode Array General Purpose ESD Protection - SM5 through SM3 SM Series W TVS Diode Array RoHS Pb GREEN Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced

More information

SC728/SC729. 2A Low Vin, Very Low Ron Load Switch. POWER MANAGEMENT Features. Description. Applications. Typical Application Circuit SC728 / SC729

SC728/SC729. 2A Low Vin, Very Low Ron Load Switch. POWER MANAGEMENT Features. Description. Applications. Typical Application Circuit SC728 / SC729 POWER MANAGEMT Features Input Voltage Range 1.1V to 2A Continuous Output Current Ultra-Low Ron 36mΩ Automatic Output Discharge Circuit Fast Turn-on Option With No Output Discharge Circuit SC728 Extended

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor 16758-1 VEMT252X1 DESCRIPTION VEMT25X1 VEMT25X1 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting.

More information

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible

More information

S101D01/S101D02 S201D01/S201D02

S101D01/S101D02 S201D01/S201D02 S1D1/S1D/S1D1/S1D S1D1/S1D S1D1/S1D 1-Pin DIP Type SSR for Low Power Control Features 1. Compact ( 1-pin dual-in-line package type). RMS ON-state current I T : 1.Arms 3. Built-in zero-cross (S1D, S1D ).

More information

HLMP-1600, HLMP-1601, HLMP-1620, HLMP-1621 HLMP-1640, HLMP-1641, HLMP-3600, HLMP-3601 HLMP-3650, HLMP-3651, HLMP-3680, HLMP-3681

HLMP-1600, HLMP-1601, HLMP-1620, HLMP-1621 HLMP-1640, HLMP-1641, HLMP-3600, HLMP-3601 HLMP-3650, HLMP-3651, HLMP-3680, HLMP-3681 HLMP-16, HLMP-161, HLMP-162, HLMP-1621 HLMP-16, HLMP-161, HLMP-36, HLMP-361 HLMP-365, HLMP-3651, HLMP-368, HLMP-3681 T 1 3 / (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps Data Sheet

More information

MADR-009269-0001TR. Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1. Functional Schematic. Features.

MADR-009269-0001TR. Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1. Functional Schematic. Features. Features High Voltage CMOS Technology Complementary Outputs Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Plastic SOIC-8 Package 100% Matte Tin Plating over

More information

Preamplifier Circuit for IR Remote Control

Preamplifier Circuit for IR Remote Control Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all

More information

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types

More information

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 3.0 A High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES

More information

13.5-40.5GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm) -10 -15 -20 -25 -30

13.5-40.5GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm) -10 -15 -20 -25 -30 Output power (dbm) GaAs Monolithic Microwave IC Description The is a packaged monolithic time three multiplier which integrates input and output buffer. This circuit is a very versatile multiplier for

More information

Typical Performance 1. IS-95C ACPR 21.0 - - - dbm WCDMA ACLR - 19.5 18.5 - dbm

Typical Performance 1. IS-95C ACPR 21.0 - - - dbm WCDMA ACLR - 19.5 18.5 - dbm Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package

More information

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1

More information

DSL03. Low capacitance TVS for high speed lines such as xdsl. Description. Features. Complies with the following standards

DSL03. Low capacitance TVS for high speed lines such as xdsl. Description. Features. Complies with the following standards Low capacitance TVS for high speed lines such as xdsl Description Datasheet - production data Features High surge capability to comply with GR-1089 and ITU-T K20/21 Keeps its peak power capability up to

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

3mm Photodiode,T-1 PD204-6C/L3

3mm Photodiode,T-1 PD204-6C/L3 3mm Photodiode,T-1 Features Fast response time High photo sensitivity Small junction capacitance Pb free This product itself will remain within RoHS compliant version. Description is a high speed and high

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc823tu SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc823tu is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604 a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On

More information

Data Sheet. HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers

Data Sheet. HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers Data Sheet SERCOS SERCOS is a SErial Realtime COmmunication System, a standard digital interface for communication between controls and drives

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

RClamp0502BA. Ultra-Low Capacitance TVS for ESD and CDE Protection. PROTECTION PRODUCTS - RailClamp Description. Features. Mechanical Characteristics

RClamp0502BA. Ultra-Low Capacitance TVS for ESD and CDE Protection. PROTECTION PRODUCTS - RailClamp Description. Features. Mechanical Characteristics - RailClamp Description RailClamp TS diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic

More information

µclamp3601p TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp Description Features Mechanical Characteristics

µclamp3601p TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp Description Features Mechanical Characteristics PRTECTIN PRDUCTS - MicroClamp Description The µclamp P is a high-surge transient voltage suppressor (TVS) optimized for protection of sensitive digital sensors used in proximity switches and industrial

More information

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

MAPD-007530-0001TB. Low Cost Two-Way GMIC SMT Power Divider 1700 2000 MHz Rev. V2. Features. Functional Diagram. Description. Ordering Information

MAPD-007530-0001TB. Low Cost Two-Way GMIC SMT Power Divider 1700 2000 MHz Rev. V2. Features. Functional Diagram. Description. Ordering Information Features Small Size and Low Profile Typical Insertion Loss: 0.6 db Typical Amplitude Balance: 0.2 db 1 Watt Power Handling Lead-Free SOT-26 Package 100% Matte Tin Plating over Copper Halogen-Free Green

More information

ST202 5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERS

ST202 5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERS 5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERS SUPPLY VOLTAGE RANGE: 4.5 TO 5.5V SUPPLY CURRENT NO LOAD (TYP): 1.5mA TRASMITTER OUTPUT VOLTAGE SWING (TYP): ± 9V TRANSITION SLEW RATE (TYP.): 12V/µs

More information

Planar PIN diode in a SOD323 very small plastic SMD package.

Planar PIN diode in a SOD323 very small plastic SMD package. Rev. 8 12 May 2015 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled

More information

DOMINANT. Opto Technologies Innovating Illumination. InGaN White S-Spice : SSW-SLD DATA SHEET: SpiceLED TM. Features: Applications:

DOMINANT. Opto Technologies Innovating Illumination. InGaN White S-Spice : SSW-SLD DATA SHEET: SpiceLED TM. Features: Applications: DATA SHEET: SpiceLED TM SpiceLED TM Like spice, its diminutive size is a stark contrast to its standout performance in terms of brightness, durability and reliability. Despite being the smallest in size

More information

TGF3015-SM. Applications. Product Features. Functional Block Diagram. General Description. Pin Configuration

TGF3015-SM. Applications. Product Features. Functional Block Diagram. General Description. Pin Configuration Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency:

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent

More information

L6234. Three phase motor driver. Features. Description

L6234. Three phase motor driver. Features. Description Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal

More information

MUR1520 MURB1520 MURB1520-1

MUR1520 MURB1520 MURB1520-1 MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

Contents. 12. Lot Number 10. 13. Reel Packing Structure 11. 14. Precaution for Use 13. 15. Hazard Substance Analysis 14. 16. Revision History 18

Contents. 12. Lot Number 10. 13. Reel Packing Structure 11. 14. Precaution for Use 13. 15. Hazard Substance Analysis 14. 16. Revision History 18 Rev : 00 ISSUE NO : DATE OF ISSUE : 2009. 04. 10 S P E C I F I CATION MODEL : SLHNNWW629T1S0U0S0 [Rank : (S0), (U0), (S0)] HIGH POWER LED - SUNNIX6 CUSTOMER : CUSTOMER CHECKED CHECKED APPROVED SAMSUNG

More information