List of Abbreviations

Transcription

1 List of Abbreviations a-c AFM AMLCD APD AR ASE BGA BN c-bn CCD CE CEN CFC CMOS CVD DLC DNA DOE DoF DPE DRAM DUV DUV EBDW EDM EEA EELS ELA ELIF EMC EMI amorphous carbon atomic-force microscope/microscopy active matrix LCD ablative photodecomposition antireflective amplified spontaneous emission ball grid array boron nitride cubic boron nitride charge-coupled device Conformité Européenne European Committee for Standardization chlorofluorocarbon complementary metal oxide semiconductor chemical vapor deposition diamond-like carbon deoxyribonucleic acid diffractive optical elements depth of focus diffractive phase elements dynamic random access memory 248 nm, 193 nm deep UV electron beam direct write electro discharge machining European Economic Area electron-energy loss spectroscopy excimer laser annealing excimer-laser-induced fluorescence electromagnetic compatibility electromagnetic interference

2 424 List of Abbreviations EPL EUV FBG FDA FDM FED FEL FEP FHG FSR FWHM GDPP GTO HAZ h-bn HR HVM IC IFTA IGBT IPL ITRS LASIK LC LCD LCVD LDE LIBS LIBWE LIDT LIF LIFT LIGA LIPAA LPP LSC LSI LTPS LVD electron projection lithography extreme UV fiber Bragg grating Food and Drug Administration (U.S.A.) frequency-domain modulation field emission displays free-electron laser fluorinated ethylene propylene fourth harmonic generation free spectral range full width (at) half maximum gas-discharge-produced plasma gate turn-off heat-affected zone hexagonal boron nitride highly reflective, high-reflective high-volume manufacturing integrated circuit iterative Fourier transform algorithm insulated gate bipolar transistor ion projection lithography international technology roadmap for semiconductors laser in-situ keratomileusis liquid crystal liquid crystal display laser-induced CVD laser dry etching laser-induced breakdown spectroscopy laser-induced backside wet etching laser-induced damage threshold laser-induced fluorescence laser-induced forward transfer Lithographie, Galvanik, Abformung = lithography, electroplating, molding laser-induced plasma-assisted ablation laser-produced plasma laser-supported combustion large scale integrated low temperature polysilicon (technology) low voltage directive

3 List of Abbreviations 425 MALDE microwave-assisted LDE MAPLE-DW matrix-assisted pulsed laser evaporation-direct writing MCM multichip modules MMA methyl methacrylate MOPA master oscillator power amplifier MZ Mach-Zehnder (interferometer) µ-tas micro total analysis system NA numerical aperture OLED organic light-emitting diodes OPC optical proximity correction OPD optical path difference PA polyamide PaCO 2 partial arterial pressure CO 2 PaO 2 partial arterial pressure O 2 PC personal computer PC polycarbonate PCB printed circuit board PDMS polydimethyl-siloxane PE polyethylene PED pressure equipment directive PEEK poly-ether ether-keton PES polyester PET polyethylene-terephthalate PFL pulse forming line PI polyimide PLC planar lightwave circuits PLD pulsed laser deposition PMMA polymethyl-methacrylate PP polypropylene ppb parts per billion (10 9 ) ppm parts per million (10 6 ) PRK photo refractive keratectomy PSM phase shift mask PTFE polytetrafluoro-ethylene (DuPont: Teflon r ) PTK photo therapeutic keratectomy PU polyurethane PVC polyvinyl-chloride PVD pulsed vapor deposition PSU polysulfon R 2 P 2 Resonant Regulating Pulsed Power supply

4 426 List of Abbreviations REM RIE RGH rms RP SCALPEL SCP SEM SEMI SLG SLS SMD SMPS SMT SROMA TAB ta-c TE TFT THG TM TSI UV UV-A UV-B VHNA VUV WC XRL XUV raster electron microscope/microscopy reactive ion etching rare gas halide root mean square retinitis pigmentosa scattering with angular limitation projection electron-beam lithography surface corona preionization scanning electron microscope (=REM) Semiconductor Equipment and Materials Institute super lateral growth sequential lateral solidification surface mounted device switched mode power supply surface mount technology spatially resolving optical multichannel analyser tape automated bonding tetrahedral amorphous carbon transverse electric thin film transistor third harmonic generation transverse magnetic top surface imaging ultraviolet spectral region A of the UV spectral region B of the UV very high numerical aperture 157 nm 50 nm tungsten (wolfram) carbide X-ray lithography 50 nm 1 nm

5 Index Abbe diffraction limit, 399 ablation, 17, 127, 139, 149f, 155, 162, 179f, 187f, 203, 229f, 336f, 365f rear side ablation, 180, 183 ablation debris, 183, 226, 233f, 249, 269, 271 ablation soot, 238 ablation depths, 2, 142, 150, 155, 203f, 212, 232, 327, 339, 394 ablation of ceramics, 155 ablation of diamond, 329 ablation of glass, 201f, 328 ablation of metals, 151 ablation of polymers, polymer ablation, 20, 167, 187, 189, 212f, 228 ablation of tissue, 361f ablation plume, 151, 190, 224 ablation photodecomposition, 17 ablative photo decomposition(apd) 139 ablation rate, 151, 172, 189, 203, 213, 218, 227, 229f, 394 ablation etch rates, 227 ablation threshold, 142, 165, 192, 222, 227, 229, 253, 265, 326 absorbance, 169, 361 absorption, 35, 120f, 149, 152, 210, 229, 256, 285, 298f absorption by air, 222, 225 absorption coefficient, 150f, 210, 162, 227, 254, 168, 210, 227, 254, 291, 299, 330, 344 absorption depth, 401 absorption depth of EUV radiation, 401 absorption length, 17, 361 absorptivity, 188 activation of dielectrics, 331 active matrix liquid crystal display (AMLCD), 306 aircraft cable, 321, 324, 330 all-solid-state switching, 56 amorphous carbon (a-c), 335f amplified spontaneous emission (ASE), 100, 261 annealing, 26, 52, 87, 140, 144, 340, 306f, 340f arc-free discharge, 49 arcing, 49, 52, 54, 75 ArF laser, 76, 82f, 166f, 227f, 253, 260, 297, 304, 327, 361 atomic force microscope (AFM), 227, 230f attenuator, 122, 128f bacterial filter, 198 ball grid array (BGA), 194 bar code, 321, 324 batch identification, 321 beam diagnostics, 105, 109, 133f, 225 beam divergence, 110 beam parameter, 107 beam profile, 52, 109, 105f, 112, 131, 133, 135, 187, 244, 311, 317, 390 bilumen catheter, 196 biocompatibility test, 168 biomimetic matrix, 169 biophotonics, 221f biophotonic chip, 272 biophotonics on a chip, 268 birefringence, 231, 254, 257, 259f, 267, 298f black body radiation, 404 bleaching, 321, 323 Boltzmann distribution, 36 boron nitride (c-bn), 335f, 346

6 428 Index borosilicate glass, 182, 201f buried optical waveguide, 254, 264f burst mode operation, 99, 387, 388 C-C transfer, 53 C4 technology, 195 capacitive sensor, 162 car engines, 351 carbon, 140 carbon deposits, 329 carbon fiber, 198, 318, 320 carbon (ta-c) film,140, 335f, castellated electrodes, 271 catheter, 167f, 196, 325, 326, 396 central island phenomenon, 365 ceramics, 140, 153f, 170f, 321, 331 channels, 23, 24, 43, 163, 175, 202, 206f, 221, 231, 234f, 254, 268 plasma channels, 373 chemical vapor deposition (CVD), 206 chrome on quartz, 14 chrome films, 240 chrome layer, 239f chrome mask, 182, 226, 234, 271 chrome-coated optics, 239 chromophores, 149, 150 cleaning, 121, 141f, 160, 161, 207, 233, 234, 240, 241, 249f, 269, 359, 369 cleaning of paintings, 142 cleaning of rotogravure, 160 cleaning of the laser gas, 62f clearing ratios, 75 coatings, 119f, 221, 233, 335f, 385, 394 coatings for X-ray mirrors, 140 cold ablation, 127, 139, 189, 194 collector mirror, 415, 418, 420 collector optics, 401, 403, 405f collisional deactivation, 44 color centers, 254, 298 color changes, 322, 323, 393 combustion analysis,, 351f command resonant charging, 60 compaction, 101, 171, 229, 254f, 298 condom leak-testing, 198 conflict diamonds, 329 conformal scanning, 157 Conformité Européenne (CE), 64, 423 congruent evaporation, 140, 339 contact lenses, 196 contact mask, 156 contamination control system, 64 controlling refractive index, 253f conversion efficiency (CE), 14, , 414f cooling system, 63 corpuscular theory, 33 critical dimension, 98, 304, 399f cubic boron nitride (c-bn), 335, 346 current rise time, 53 customized ablation, 365 cylindrical lenses, cylinder optics, 130, 218, 311 damage fluence, 120, 121 damage threshold, 120, 180, 223, 240, 258 dc resonant, 58, 59, 60 debris, 152, 183, 190f, 203, 214f, 233f, 253, 269, 404, 412, 414f debris filter, 403, 406, 421 debris mitigation, 412, 414 deep ultraviolet (DUV), 15, 90, 94, 98, 119, 123, 266, 297, 302, 423 DUV lithography, 94, 98 deoxyribonucleic acid (DNA), 159, 287 depth of focus (DoF), 91, 132f, 163, 265f, 296f, 302f, 399 detonation waves, 165 dielectric mask, 157, 180, 182 diamond, 232, 242f, 279, 285, 329f, 335, 341 dielectrical sensor, 162 diffractive optical elements (DOE), 116, 182, 198, 221, 222, 245f, 423 diffractive phase elements (DPE), 182, 183 direct multiphoton excitation, 376, 380 discharge arcing, 51 discharge circuit, 48, 52, 53, 386 discharge cross-section, 49, 85f discharge electrodes, 48f, 78, 86 discharge stability, 49, 76, 82, 83 discoloration, 321 double pulse excitation, 57 drilling, 4, 17, 25, 28, 128, 140, 143f, 155, 162f, 187f, 201, 203f, 390 duct oscillations, 77 dust, 141

7 Index 429 dust filtration, 64 dust precipitator, 64 DUV, see deep ultraviolet E95%, 95, 96 electrode burn-off, 50, 64 electrode erosion, 49 electrode lifetime, 12, 52 electrode materials, 51, 52, 64 electrode profile, 51, 83 electrode structures, 49 electromagnetic compatibility (EMC), 65, 68, 423 electromagnetic interference, (EMI), 61, 423 electron beam, 81f, 300 electron beam direct write (EBDW), 300 electron beam evaporation, 415 electron beam lithography, 301 electron densities, 49f, 58, 83 electroplating, 176 EMC directive, 65, 423 EMC standards, 65, 67, 68 energy dose control, 98f engraving, 321f, 329 erosion, 22, 52f, 64 erosion rate, 51, 64 etching, 17, 18, 19, 93, 140, 140f, 156, 179f, 228f, 238f, 258f, 295, 302 etendue, 405, 409, 414, 415, 418, 420, 421 European Committee for Standardization (CEN), 70 European directives, 65, 68 EUV, see extreme ultraviolet excimer laser transitions, 41, 42 excimer lasers for microlithography, 89f, 303 excimer lasers for medical applications, 361f exciplexes, 6, 8, 42 excitation rate, 43 excited dimer, 8, 42 extreme ultraviolet (EUV), 91, 121, 124f, 300, 399f, 424 EUV lithography, 125, 399f EUV sources, 399f XUV, 119, 124, 400 XUV coatings, 124f XUV lasers, 126 EUV mask, 402 EUV microstepper, 401, 412f EUV pinhole camera, 410, 411 EUV scanner, 401, 402, 403, 404, 415, 418 EUV spectrograph, 410 F 2-laser, fluorine laser, 42, 107, 108, 115, 121, 182, 212f, 301, 349 F 2-laser photosensitivity, 254, 258, 263, 265 feature size, 90, 91, 92f, 135, 235, 238, 279, 295, 297f, 400 femtosecond excimer laser, V, 182, 191, 279f fertility treatment, 197 fiber Bragg grating (FBG), 6, 22, 25, 140, 143,144, 181, 223, 243, 258, 313f field emission displays (FED), 312 flow clearing (ratio), 75, 76 flow loop, 76, 77f fluorine passivation, 52 flying spot scanning, 366 free electron laser (FEL), 38, 124 free spectral range (FSR), 96, 261 fuel sprays, 352, 353 fused silica, 94, 101, 129, 132, 152, 156, 179, 180, 182, 183, 188, 221, 227, 229f, 279, 287, 298f, 315 g-line, 92, 296 gas discharge, 11, 41, 51, 82, 402, 419 gas filter, 63, 359 gas lasers, 9, 38, 69 gas lifetime, 11, 50, 88, 388, 397 gas purification, 64 gas-discharge-produced plasma (GDPP), 402, 404, 419 GDPP EUV sources, 406, 414, 420 germanosilica, 229, 254, 263, 268 glass marking, 144, 328 glaucoma surgery, 361, 367 glow discharge instability, 48, 58, 83 Gordon Moore, 89, 295

8 430 Index gratings, 140, 174, 182, 238, 243, 258, 262, 282, 314 halogen gas loss, 64 halogen injections, 64 harpooning reaction, 43 Hartmann-Shack wavefront sensor, 114 heat diffusion length, 152 heat exchanger, 63, 81 heat-affected layer, 232 heat-affected zone (HAZ), 17, 140, 168, 193, 228, 231f, 279, 321, 325, 424 hidden identification marks, 328 high-resolution mask imaging, 311 high-average-power excimer lasers, 79 high-energy lasers, 81 high-power excimer lasers, 59, 75, 130, 307 high-repetition-rate, 75, 76, 385 high-repetition-rate excimer lasers, 14, 75, 50, 56, 173, 390 high-temperature superconducting films, 335 high-volume lithography, 14 high-volume manufacturing (HVM), 43, 400, 421 hole drilling, 17, 187, 192, 197 hollow atoms, 373, 377, 379 hollow plasma channels, 373 homogenized beams, 112 homogenizer, 112, 130, 133, 159, 187, 311 hyperopic eye, 362 i-line, 26, 92, 296 identification codes, 144, 321, 328 imaging optics, 156, 296, 402 immersion fluid, 91 immersion lithography, 121, 221, 399 implant materials, 169 in-band energy meter, 410 incubation, 174, 188, 207, 229, 247, 253, indirect ablation, 179 injector channels, 269, 270 ink jet nozzles, 25, 127, 144, 167, 322, 390 interference of multiple beams, 281, 282 intermediate focus, 403, 405, 412, 418 intermediate focus power, 414, 421 k-factor, 399, 400, kinetic energy, 164, 336, 337, 338, 341, 408 kinoforms, 182, 246 KrF laser, 1, 9, 14, 42f, 82f, 84, 97, 99f, 111f, 112, 126, 144, 161, 169, 172, 183, 187, 247, 258, 280, 317, 331, 361, 377 L-C inversion circuit, 55, 56 lab-on-(a)-chip, 201, 234, 269, 393 large-area ablation, 365 laser activation, 331, 333 laser angioplasty, 361, 369 laser beam characterization, 105, 116 laser cavity, 37, 54 laser cleaning, 141, 142, 147 laser chemical vapor deposition (LCVD), 140, 141, 144, 146 laser dry etching (LDE), 141, 146 laser engraving, 321 laser in-situ keratomileusis (LASIK), 19, 143, 144, 361, 364 laser radiation safety, 65, 70, laser resonator, 37, 94, 133, laser sputtering, 140 laser vision correction, 28, 143, 144 laser-induced backside wet etching (LIBWE), 179, 180, 243, 247 laser-induced breakdown spectroscopy (LIBS), 142 laser-induced chemical vapor deposition (LCVD), 140, 141, 144, 146 laser-induced damage threshold (LIDT), 120 laser-induced fluorescence (LIF), 29, 203, 287, 351, 356 laser-induced forward transfer (LIFT), 183, 285 laser-induced plasma-assisted ablation (LIPAA), 180, 243 laser-produced plasma (LPP), 406, 409, 412, 417, 421 laser-produced plasma EUV sources, 408, 417 LASIK, 19, 143, 144, 361, 364, 424 leak detectors, 174 lenses, 94, 132f, 183, 196, 234, 267, 394

9 Index 431 LIGA, 176, 424 light amplification, 6, 36, 124 line beam optics, 311 line narrowing, 94, 97, 103 liquid-crystal displays, 243, 306, 309, 424 lithium target material, 415 lithography, 5, 12, 27, 71, 89, 93, 100, 140, 401 lithography equipment, 15, 401 lithography lenses, 163 logos, 321 long optical pulses, 57, 88 long-term testing, 394 loss processes, 43, 44, 49 low-voltage directive, 65, 68, 70 LPP sources, 404, 417, 421 machinery directive, 65, 69, 70 magnetic pulse compression, 54, 56 magnetic self-focusing, 407 magnetic switch, 12, 55, 57, 402 marking, 321 marking depth, 324, 330 marking of diamonds, 329 marking of spectacles, 327 mask fabrication, 10, 156, 185, 222, 238 mask projection, 11, 128, 134, 156, 172, 201, 211, 216, 244,281, 323 mask projector, 157 mask writing, 26, 223, 301 matrix-assisted pulsed laser evaporation-direct writing (MAPLE-DW), 331, 425 Max Planck, 11, 12, 33 metallization of dielectrics, 331 metals, 122, 151, 155, 174, 243, 280f, 321f, 358 micro channels, 10, 206, 222, 235, 268, 269 (see also channels ) micro-electric mechanical systems (MEMS), 183, 221, 233 micro fabrication, 144, 149f, 275, 281 microfluidic channels, 221, 234, 268, 269, 271, 274 micro fluidics, 209 microfluidic test structure, 175 micro gears, 173 micro-lens arrays, 234 micro lenses, 115, 181, 183 microlithography, 26, 56, 89, 91,92, 95, 98, 102, 127, 143, 144, 295, 303, 394 micro machining, 155, 286, 351, micro-machining distortion, 232 micro-machining workstation, 286 micro nozzles, 174 micro-optics fabrication, 181, 234 micro parts, 174 micro reaction systems, 217 micro structuring, 25, 144, 153, 177, 185 micro vias, 193, 194, 196, 222, 269 Mie scattering, 352 minimum feature size, 92, 400 mixer structures, 218 Moore s Law, 89, 295 multi-component ceramics, 140 multichip modules, 17, 194, 425 multilayer mirrors, 126, 402, 410 multilayer printed circuit boards (PCBs), 192, 425 multilayer-coated mirrors, 401 multilayer tool, 410 multipass-illuminator, 158 myopic eyes, 361, 362 nano-lithography, 5 nano-scale fabrication, 279 nano-structuring, 5 nano-structuring with femtosecond excimer laser pulses, 279 nanofabrication, 183, 221 node, 92f, 121f, 300f, 399f nozzle, 25, 77, 127f, 144, 163, 174, 196f, 224, 390, 410, 417 one-shot-marking, 330 optical fiber, 6, 186, 196, 229, 233, 237, 244f, 258f, 275, 313, 314, 359, 368 optical lithography, 89, 91, 119, 126, 295, 299f, 399f optical materials, 119, 132, 182, 243, 253, 281, 298f, 385, 395 optical penetration depth, 150, 152, 153, 155, 233, 265, 298 optical resolution, 296 optics protection, 416

10 432 Index organic light-emitting diode (OLED), 312 overshoot behavior, 387 parallel hole drilling, 199 particle contamination, 152, 402 particle theory of light, 33 particulate reduction, 340 particulates, 233, 302, 339f passivation, 52, 64, 195f, 295 pellicle, 302, 303 pharmaceuticals, 326 phase elements, 182, 423 phase mask method, 314f phase shift mask (PSM), 300, 425 photo refractive keratectomy (PRK), 361, 425 photo therapeutic keratectomy (PTK), 363, 425 photonic crystals, 279, 282, photosensitive fiber, 314 photosensitivity response, 253f pinch effect, 407 pinch plasma, 407 Planck s formula, 404 plasma cleaning, 64 plume ejection, 288 polymer tubes, 216 polymers, 19, 132, 143, 149f, 177f, 201, 212f, 221f,310 population inversion, 34f, 52 porous-metal cooling, 413, 415 power supply topologies, 59 powerplants, 351, 358 precipitation system, 64 precise depth profiling, 179 precision orifice, 173 preionization, 9, 49f, 85f, 386, 407, 426 pressure equipment directive, 65, 68 pressure waves, 76, 369 profile of the laser beam, 51 projection lenses, 94, 132, 135 psoriasis, 370 pulse compression techniques, 56 pulse forming line (PFL), 57, 425 pulse length, 100, 101, 121, 150, 303 pulsed laser deposition (PLD), 29, 140, 342, 346, 404, 425 pulser, 52, 57f pump energy densities, 52 pump power densities, 43 purge systems, 63 Pyrex, 201 radiation-damage, 253 Raman scattering, 352, 353, 355, 356 Rayleigh scattering, 352, 356 reaction channels, 43 rear side ablation patterning, 183 reduction of particulates, 340, 341, 350 refractive eye surgery, 357, 396 refractive index modulation, 314 refractive laser surgery, 19, 361 resists, 20, 98, 176, 226, 242, 298, resonant charging, 58, 59, 60 resonant regulating pulsed power, 60 restoration, 142 reticle, 298, 301, 302, 401, 402 retina implant, 169 safety standards, 64, 65, 68,71 screen electrodes, 49, 51 selective micro-deposition, 285 SEMI standards, 71, 426 semiconductor lasers, 22, 38, 39 semiconductor switches, 56, 61 sensor networks, 313, 318, 319 sequential lateral solidification (SLS), 310 shaping lens surfaces, 234 shock wave, 64, 76, 151, 285 silica glasses, 228, 233, 254, 266 silicon thin films, 306 silicones, 169 solid-state lasers, 3, 38, 165, 312, 385 solid-state switch module, 386 solid-state switching, 56, 57 soot, 190, 233 spark preionization, 49, 50, 86 spatial light modulator (SLM), 391 spiker-sustainer circuits, 57, 58 spinnerets, 173 spontaneous emission, 35, 36, 44, 100, 356, 379 SQUID, 140, 171, 185 stents, 216 step-and-repeat, 157, 387 stimulated emission, 6, 34, 36, 43, 374

11 Index 433 stoichiometry of multicomponent targets, 339 strain, 319, 320 streamer and arc formation, 48 stress relaxation, 340, 343, 349 stroboscopic Schlieren images, 285, 288, 289, 290 super-lateral growth (SLG), 309 superhard coatings, 335, 336, 349 support system, 133 surface cleaning, 6, 141 surface corona preionization (SCP), 50 surface mount technology, 194 surface mounted devices (SMDs), 326 surface-discharge pre-ionization, 407 surface-guided discharges, 50 sustainer, 57, 58 switched mode power supply (SMPS), 58, 61, 62 switching technology, 57, 58 technical combustion, 351, 356 technology nodes, 89, 93, 400 technology roadmap, 90, 221, 300 telecommunication components, 181, 243 test leaks, 174 TFT annealing, 140, 143, 306, Theodore H. Maiman, 6, 35, 39 thermo-elastic shock wave, 286, 292 thick ta-c films, 344, 345 thin film transistors, 26, 306 threshold fluence, 150, 165, 227, 230, 280 through-holes, 159, 174, 193, 197, 235 thyratron tube, 53 thyristor-switched compressor, 56 time resolved Schlieren imaging, 287 tin-vapor-based, 415 trabecular meshwork, 367, 368 trabeculotomy, 367, 368 triatomic gases, 44 trimming planar lightwave circuits, 261 Ultra-fast UV Laser Transfer, 285 UV preionization, 9, 49, 86 UV solid-state lasers, 330 UV-coating, 119 vacuum-ultraviolet optical tools, 222 vector marking, 330 via drilling, 144, 187 voltage regulation, 60 wave theory, 33 wave-particle duality, 33 wavefront analysis, 28, 396 wavefront measurement, 114, 115 waveguides, 165, 237, 238, 264, 265 wavelength control, 95 wear-resistant coatings, 339, 343 Willard H. Bennet, 407 window contamination, 51 wire stripping, 144, Wolter telescopes, 401 X-ray, 38, 49, 124, 176, 339, 380 X-ray preionization, 13,87 X-ray source, 86, 373 XeCl laser, 12f, 42f, 82, 85f, 113, 171, 199, 287, 353, 368, 370 XeF, 9f, 42, 144, 187, 322, 331, 356 xenon target, 402, 417 XUV coatings, 124, 126 Z-pinch, 407, 408, 411

12 Printing and Binding: Strauss GmbH, Mörlenbach