DESIGNING TRANSISTOR I.F. AMPLIFIERS
|
|
- Shonda Page
- 7 years ago
- Views:
Transcription
1 DESIGNING TRANSISTOR I.F. AMPLIFIERS
2 By the same author: TRANSISTOR BANDPASS AMPLIFIERS The theory of analysis and design of selective amplifiers as used in the I.F. parts of radio, television and radar receivers, is here dealt with, especially in relation to the application of transistors. Single-stage amplifiers as well as multi-stage amplifiers, with arbitrary types of interstage or terminating networks are treated in detail as regards stability, power gain, amplitude response curve and envelope delay curve; also neutralization of the transistor internal feedback and problems associated with spreads in transistor parameters.
3 DESIGNING TRANSISTOR I.F. AMPLIFIERS W. Th. H. HETTERSCHEID 1966 SPRINGER-VERLAG BERLIN HEIDELBERG GMBH
4 This book contains xiv pages and 138 illustrations and 96 pages two-coloured design charts, 3 folding-out tables. U.D.C. nr : Library of Congress Catalog Card Number: Additional material to this book can be downloaded from ISBN DOI / ISBN (ebook) Springer-V erlag Berlin Heidelberg 1966 Originally published by N. V. Philips' Gloeilampenfabrieken, Eindhoven, The Netherlands, in 1966 Softcover reprint ofthe hardcover lst edition 1966 AU rights reserved rej PHILIPS Trade marks of N.V. Philips' Gloeilampenfabrieken No representation or warranty is given that the matter treated in this book is free from patent rights; nothing herein should be interpreted as granting, by implication or otherwise, a licence under any patent rights.
5 PREFACE In most cases the design of I.F. amplifiers for radio, television and radar receivers involves a large amount of computational effort. This is due to the numerous requirements imposed on such an amplifier which, in most cases, are contradictory. As a consequence, a compromise must usually be found which will result in an optimum performance of the amplifier with regard to the most important specification points. The above comments are applicable to all typts of I.F. amplifier, irrespective of whether they are equipped with electron tubes or transistors. The design of transistor I.F. amplifiers, however, imposes even more problems than that of the tube counterpart. This is due to the internal feedback of the tr~nsistors, which is not negligibly small. A transistor I. F. amplifier can, therefore, not be treated on a stage-by-stage basis as in the case of amplifiers equipped with modern penthode tubes, operating at a not too high frequency. The stage-by-stage design of a transistor I.F. amplifier is not possible because the internal feedback of the transistor in each stage affects the performance of all the other stages. This implies that an I.F. amplifier equipped with transistors must be treated as a whole. A new parameter is therefore added to the variety of parameters which already exists with tube equipped amplifiers: this new parameter being the amount of feedback present in each stage. In this book, a method is presented which facilitates that the design of transistor I.F. amplifiers can be carried out with great ease and accuracy. The key of this design method is formed by a large number of computed "design charts" which are used in connection with a step-by-step design procedure. These design charts contain amplitude response, envelope delay and gain characteristics, taking into account a certain set of parameters. One of these parameters is related to the amount of feedback of the transistors in the various amplifier stages. The step-by-step method of design leads to the choice of a particular set of design charts. Consultations of this set enables an accurate determination of the performance of the amplifier to be made. The design charts present moreover the information necessary for constructing the bandpass filters used as interstage networks. The subject-matter contained in this book is based on work carried out in the Philips Semiconductor Application Laboratory at Nijmegen, The Netherlands.
6 VI PREFACE The computed design charts are based on the analytical approach to amplifier design presented in the author's book "Transistor Bandpass Amplifiers". The author wishes to express his gratitude towards his colleagues for the many discussions and the helpful suggestions. In this respect he especially wishes to mention Mr. E. J. Hoefgeest and Mr. A. H. J. Nieveen van Dijkum. For correcting the manuscript the author is indebted to Mr. W. H. Cazaly, Ilford, England. March, 1966 The Author
7 CONTENTS Chapter 1 INTRODUCTION Chapter 2 THE DESIGN SPECIFICATION OF I.F. AMPLIFIERS Gain Gain Specifications of an I.F. Amplifier for a Television Receiver Gain Specification of an I.F. Amplifier for a Radio Receiver P.M. Receivers A.M. Receivers Amplitude Response Characteristic Radio Receivers Television Receivers Envelope Delay Characteristic 11 Chapter 3 SPREADS, TOLERANCES AND VARIATIONS IN I.F. AMPLIFIERS Definition of Various Groups of Deviations from Nominal Conditions Spreads Tolerances Variations Combination of Deviations from Nominal Conditions of Various Devices in Designing I.F. Amplifiers Method of Combining Various Deviations Spreads. Tolerances and Variations Encountered in I.F. Amplifier Design Chapter 4 TRANSISTOR PARAMETERS Admittance Parameters Transistor Parameter Nomenclature Dependence of Transistor Admittance Parameters on Operational Conditions Dependence of Transistor Admittance Parameters on Frequency Dependence of Input Admittance on Frequency 21
8 VIII CONTENTS Dependence of Reverse Transfer Admittance on Frequency Dependence of Forward Transfer Admittance on Frequency Dependence of Output Admittance on Frequency Dependence of Transistor Admittance Parameters on Voltage and Current Dependence of Input Admittance on Voltage and Current Dependence of Reverse Transfer Admittance on Voltage and Current Dependence of Forward Transfer Admittance on Voltage and Current Dependence of Output Admittance on Voltage and Current Dependence of Admittance Parameters on Temperature Dependence of Derived Transistor Quantities on Frequency, Voltage, Current and Temperature Spreads in Transistor Admittance Parameters. 47 Chapter 5 SURVEY OF I.F. AMPLIFIER DESIGN THEORY Stability Single-Stage Amplifier with Two Single-Tuned Bandpass Filters Multi-Stage Amplifier with Single-Tuned Bandpass Filters Single-Stage Amplifier with Two Double-Tuned Bandpass Filters Multi-Stage Amplifiers with Double-Tuned Bandpass Filters Basic Boundary of Stability Alignment Amplification Response Curve Resume 60 Chapter 6 NEUTRALIZATION. 61 Chapter 7 AUTOMATIC GAIN CONTROL OF TRANSISTOR I.F. AMPLIFIERS Reverse Gain Control. 65
9 CONTENTS IX Forward Gain Control Comparison of Signal Handling Capability of Reverse and Foreward Gain Control Effects of Input and Output Admittance Variations on the Response Curve Chapter PRACTICAL DESIGN METHOD FOR I.F. AMPLI- FIERS 72 Transistor Parameters Required for the Design. 72 The Regeneration Coefficient. 73 Limit Imposed on the Regeneration Coefficient by the Stability Requirement Amplifier without Neutralization Amplifier with Neutralization 74 Limit imposed on the Regeneration Coefficient by the R~oo~~~ ~ Amplifiers with Double-Tuned Bandpass Filters Spreads in g Spreads in gu Combined Effect of Spreads in g22 and ru Spreads in C22 and Cu Amplifiers with Single-Tuned Bandpass Filters Influences of Spreads in gu and g Effects of Spreads in Cu and C Summary of Remarks on the Regeneration Coefficient 81 The value of q2. 81 The Gain The Transducer Gain of the Complete Amplifier The Power Gain per Stage of the Amplifier The Voltage Gain per Stage of the Amplifier 94 Chapter EXAMPLES OF AMPLIFIER DESIGN. 98 An I.F. Amplifier for an A.M. Radio Receiver Regeneration Coefficient Determined by Stability Regeneration Coefficient Determined by Response Curve Requirements Definite Choice of the Regeneration Coefficient 100
10 X CONTENTS Design of the Double-Tuned Bandpass Filters The 3 db Bandwidth Adjacent Channel Selectivity Transimpedance Complete Circuit Diagram An I.F. Amplifier for F.M. Receivers with Double- Tuned Bandpass Filters General Design Considerations Regeneration Coefficient Determined by Stability Regeneration Coefficient Determined by Response Curve Requirements Design of the Double-Tuned Bandpass Filters The 3 db Bandwidth The Adjacent Channel Selectivity The Envelope Delay Gain Transducer Gain Gain per Stage Complete Circuit Diagram A Combined I.F. Amplifier for an A.M./F.M. receiver General Design Considerations of the Combined I.F. Amplifiers I.F. Amplifier for F.M Determination of Regeneration Coefficient Design of the Double-Tuned Bandpass Filters Gain and Frequency Response I.F. Amplifier for A.M Effects of the Emitter-Decoupling Capacitor Design for Stability Gain and Frequency Response Complete Circuit Diagram A Selective Amplifier for 35 Mc/s Regeneration Coefficient The Output Stage of the Amplifier Collector Circuit Base Circuit Transducer Gain of the Complete Amplifier 124
11 CONTENTS XI Power Gain of Stage Power Gain of Stage Power Gain of the Input Stage Amplitude Response Curve Dimensioning of the Tuned Circuits Circuit Circuit Circuits 3, 5 and Circuits 4 and Parasitic Effects Due to Capacitive Taps Complete Circuit Diagram 129 Chapter 10 EXAMPLE OF AMPLIFIER DESIGN TAKING INTO ACCOUNT DEVIATIONS FROM NOMINAL CONDITIONS General Choice of Transistor Biasing Points Design for Nominal Conditions Neutralization Determination of Bandpass Filter Parameters The Biasing Networks of the Various Transistors The Output Stage The Output Circuit The Input Circuit Stability The Second Stage The Damping Ratios Stability The Input Stage of the Amplifier with Reverse 138 A.G.C The Damping Ratios Stability The Input Stage of the Amplifier with Forward A.G.C The Damping Ratios Stability The Input Double-Tuned Bandpass Filter The Gain of the Amplifier The Output Stage The Second Stage 141
12 XII CONTENTS The Input Stage of the Amplifier with Reverse A.G.C The Input Stage of the Amplifier with Forward A.G.C The Input Double-Tuned Bandpass Filter The Gain of the Complete Reverse A.G.C. Amplifier The Gain of the Complete Forward A.G.C. Amplifier Complete Circuit Diagram Measurements The Reverse A.G.C. Amplifier The Amplitude Response Curve The Gain Dependence of Gain on Ambient Temperature Dependence of Gain on the Supply Voltage Linearity of the Amplifier Further Measurements The Forward A.G.C. Amplifier The Amplitude Response Curve The Gain Dependence of Gain on Ambient Temperature Dependence of Gain on Supply Voltage Linearity of the Amplifier Further Measurements Chapter 11 DESIGN EXAMPLES OF INCORPORATING SPREADS- THE CHOICE OF AN A. G. C.-SYSTEM FOR AN I.F. AMPLIFIER OF A TELEVISION RECEIVER The Various Signal Levels in I.F. Amplifier and Tuner The Permissible Signal Levels Spreads, Tolerances and Operational Variations Data of the I. F. Amplifier and the Tuner The Tuner Evaluation of Spread Factors
13 CONTENTS XIII Chapter The Transistor High-Frequency Properties The Second and Third Stages of the I. F. Amplifier The Input Stage of the I.F. Amplifier The Tuner The Detector Circuit The Dependence of Gain on Emitter Current The D. C. Properties of the Transistors Evaluation of Resistance Tolerances The Second and Third Stages of the I.F. Amplifier The Input Stage of the I.F. Amplifier The Tuner The Reference Levels of the A.G.C. Circuit Evaluation of Operational Variation The Contrast Control The Variations of Supply Voltage The I.F. Amplifiers The Tuner The Reference Levels of the A.G.C. Circuits The Variations in Ambient Temperature Combination of the Various Spreads, Tolerances and Operational Variations Spreads in Gain of the I. F. Amplifiers The Output Voltage of the Video Detector The Possible A. G. C. Range of the I.F. Amplifier The Overall Gain of Tuner and I.F. Amplifier Spreads in Overall Gain of Tuner and I. F. Amplifier Possible Delay of A.G.C. Cross-Over Point TheMixerStage The R.F. Stage The Choice of the Nominal Cross-Over Point 191 THE EFFECTS OF SPREADS IN TRANSISTOR ADMITTANCE PARAMETERS Amplifier Determinants with Spreads in Transistor Parameters Input-Damping Spread Factor Output-Damping Spread Factor
14 XIV CONTENTS Input-Tap Spread Factor Transistor Regeneration Coefficients The Coefficient of Coupling of the Double-Tuned Bandpass Filters The Normalized Admittances of the Tuned Circuits Survey of Terms of the Interchangeability Determinant Results of an Interchangeability Analysis. 200 Chapter 13 EXAMPLE OF CALCULATING THE GAIN PER FORMANCE OF AN I.F. AMPLIFIER FOR A TELEVISION RECEIVER Description of the Amplifier Gain Calculation Performance Measurements 212 Chapter 14 STEP-BY-STEP METHOD OF DESIGNING I.F. AMPLIFIERS Chapter 15 DESIGN CHARTS Choice of Tuning method Survey of Design Charts Single-stage amplifier with two-double tuned bandpass filters Two-stage amplifier with three double-tuned bandpass filters Three-stage amplifier with four single-tuned bandpass filters Four-stage amplifier with five single-tuned bandpass filters Three-Stage amplifier with four double-tuned bandpass filters Four-stage amplifier with five double-tuned bandpass filters Three-stage amplifier with three double-tuned and one single-tuned bandpass filters Four-stage amplifier with four double-tuned and one single-tuned bandpass filters
Contents. Preface. xiii. Part I 1
Contents Preface xiii Part I 1 Chapter 1 Introduction to Frequency-Modulated Continuous-Wave 3 Radar 1.1 Brief History 3 1.2 Examples of Use of FMCW Radar 5 1.2.1 Radio Altimeters 5 1.2.2 Level-Measuring
More informationPIEZO FILTERS INTRODUCTION
For more than two decades, ceramic filter technology has been instrumental in the proliferation of solid state electronics. A view of the future reveals that even greater expectations will be placed on
More informationP D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
More informationLM1596 LM1496 Balanced Modulator-Demodulator
LM1596 LM1496 Balanced Modulator-Demodulator General Description The LM1596 LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to the product of an input (signal)
More informationLM1036 Dual DC Operated Tone/Volume/Balance Circuit
LM1036 Dual DC Operated Tone/Volume/Balance Circuit General Description The LM1036 is a DC controlled tone (bass/treble), volume and balance circuit for stereo applications in car radio, TV and audio systems.
More informationCurrent vs. Voltage Feedback Amplifiers
Current vs. ltage Feedback Amplifiers One question continuously troubles the analog design engineer: Which amplifier topology is better for my application, current feedback or voltage feedback? In most
More informationLaboratory #5: RF Filter Design
EEE 194 RF Laboratory Exercise 5 1 Laboratory #5: RF Filter Design I. OBJECTIVES A. Design a third order low-pass Chebyshev filter with a cutoff frequency of 330 MHz and 3 db ripple with equal terminations
More informationunit : mm 3067-DIP24S
Ordering number : EN2012A Monolithic Linear IC LA1267 FM/AM Tuner of Electronic Tuning Type Functions FM : IF amplifier, quadrature detector, AF preamplifier, signal meter, tuning indicator drive output
More informationSWITCH-MODE POWER SUPPLY CONTROLLER PULSE OUTPUT DC OUTPUT GROUND EXTERNAL FUNCTION SIMULATION ZERO CROSSING INPUT CONTROL EXTERNAL FUNCTION
SWITCH-MODE POWER SUPPLY CONTROLLER. LOW START-UP CURRENT. DIRECT CONTROL OF SWITCHING TRAN- SISTOR. COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REERSE-GOING LINEAR OERLOAD CHARACTERISTIC CURE
More informationRF Network Analyzer Basics
RF Network Analyzer Basics A tutorial, information and overview about the basics of the RF Network Analyzer. What is a Network Analyzer and how to use them, to include the Scalar Network Analyzer (SNA),
More informationLecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.
Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.
More informationRF SYSTEM DESIGN OF TRANSCEIVERS FOR WIRELESS COMMUNICATIONS
RF SYSTEM DESIGN OF TRANSCEIVERS FOR WIRELESS COMMUNICATIONS RF SYSTEM DESIGN OF TRANSCEIVERS FOR WIRELESS COMMUNICATIONS Qizheng Gu Nokia Mobile Phones, Inc. Q - Springer Gu, Qizheng, 1936- RF system
More informationLocal Oscillator for FM broadcast band 88-108 MHz
Local Oscillator for FM broadcast band 88-108 MHz Wang Luhao Yan Shubo Supervisor: Göran Jönsson Department of Electrical and Information Technology Lund University 2012.05.15 Abstract In this project
More informationUnit/Standard Number. High School Graduation Years 2010, 2011 and 2012
1 Secondary Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding of proper
More informationTV Trouble Shooting Manual
INFORMATION SOURCE 5 TV Trouble Shooting Manual VOLUME 1 BY MASAAKI MUKAI AND RYOZO KOBAYASHI ASIAN AND PACIFIC SKILL DEVELOPMENT PROGRAMME INTERNATIONAL LABOUR OFFICE ISLAMABAD, PAKISSTAN, 1988 Appendix
More informationFrequency Response of Filters
School of Engineering Department of Electrical and Computer Engineering 332:224 Principles of Electrical Engineering II Laboratory Experiment 2 Frequency Response of Filters 1 Introduction Objectives To
More informationFig. 1 :Block diagram symbol of the operational amplifier. Characteristics ideal op-amp real op-amp
Experiment: General Description An operational amplifier (op-amp) is defined to be a high gain differential amplifier. When using the op-amp with other mainly passive elements, op-amp circuits with various
More informationunit : mm With heat sink (see Pd Ta characteristics)
Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap
More informationEquivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V
Ordering number: 2137B Thick Film Hybrid IC STK4181V AF Power Amplifier (Split Power Supply) (45W + 45W min, THD = 0.08%) Features Pin-compatible with the STK4102II series. The STK4101V series use the
More informationLAP NODO ÓPTICO 2/4 SALIDAS WT-8604JL
2/4 SALIDAS WT-8604JL Latin American Power. CABA, Argentina. www.latinamericanpower.com 1 WT-8604JL OPTICAL RECEIVER 1 - DESCRIPTION WT-8604JL is our new high-class 4-way output CATV optical receiver.
More informationP2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
More informationMAINTENANCE & ADJUSTMENT
MAINTENANCE & ADJUSTMENT Circuit Theory The concept of PLL system frequency synthesization is not of recent development, however, it has not been a long age since the digital theory has been couplet with
More informationLM386 Low Voltage Audio Power Amplifier
Low Voltage Audio Power Amplifier General Description The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count
More informationCommon-Emitter Amplifier
Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,
More informationThe front end of the receiver performs the frequency translation, channel selection and amplification of the signal.
Many receivers must be capable of handling a very wide range of signal powers at the input while still producing the correct output. This must be done in the presence of noise and interference which occasionally
More informationVCO Phase noise. Characterizing Phase Noise
VCO Phase noise Characterizing Phase Noise The term phase noise is widely used for describing short term random frequency fluctuations of a signal. Frequency stability is a measure of the degree to which
More informationUnderstanding the Terms and Definitions of LDO Voltage Regulators
Application Report SLVA79 - October 1999 Understanding the Terms and Definitions of ltage Regulators Bang S. Lee Mixed Signal Products ABSTRACT This report provides an understanding of the terms and definitions
More informationCommunication Systems
AM/FM Receiver Communication Systems We have studied the basic blocks o any communication system Modulator Demodulator Modulation Schemes: Linear Modulation (DSB, AM, SSB, VSB) Angle Modulation (FM, PM)
More informationAMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE
AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE Thank you for purchasing your Amplified High Speed Fiber Photodetector. This user s guide will help answer any questions you may have regarding the
More informationunit : mm 3067-DIP24S
Ordering number : EN2291B Monolithic Linear IC LA1266 AM/FM Tuner System Of Electronic Tuning Type Functions FM : IF amplifier, quadrature detector, AF preamplifier, signal meter, IF count outputlifier,
More informationMRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output CNY7 Description The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E
More informationSupply voltage Supervisor TL77xx Series. Author: Eilhard Haseloff
Supply voltage Supervisor TL77xx Series Author: Eilhard Haseloff Literature Number: SLVAE04 March 1997 i IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to
More informationHow To Use A Kodak Kodacom 2.5D (Kodak) With A Power Supply (Power Supply) And Power Supply
Reflective Optical Sensor with Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence
More informationBipolar Junction Transistor Basics
by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical
More informationAN1991. Audio decibel level detector with meter driver
Rev. 2.1 20 March 2015 Application note Document information Info Keywords Abstract Content SA604A, LM358, RSSI, cellular radio The SA604A can provide a logarithmic response proportional to the input signal
More information2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
More informationAND9015. A Solution for Peak EMI Reduction with Spread Spectrum Clock Generators APPLICATION NOTE. Prepared by: Apps Team, BIDC ON Semiconductor
A Solution for Peak EMI Reduction with Spread Spectrum Clock Generators Prepared by: Apps Team, BIDC ON Semiconductor APPLICATION NOTE Introduction This application note will outline Spread Spectrum Clock
More informationPS25202 EPIC Ultra High Impedance ECG Sensor Advance Information
EPIC Ultra High Impedance ECG Sensor Advance Information Data Sheet 291498 issue 2 FEATURES Ultra high input resistance, typically 20GΩ. Dry-contact capacitive coupling. Input capacitance as low as 15pF.
More informationSA605 High performance low power mixer FM IF system
RF COMMUNICATIONS PRODUCTS High performance low power mixer FM IF system Replaces data of November 3, 1992 RF Communications Handbook 1997 Nov 07 Philips Semiconductors DESCRIPTION The is a high performance
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
More informationA 1 to 2 GHz, 50 Watt Push-Pull Power Amplifier Using SiC MESFETs. high RF power. densities and cor- capacitances per watt.
From June 2006 High Frequency Electronics Copyright 2006 Summit Technical Media A 1 to 2 GHz, 50 Watt Push-Pull Power Amplifier Using SiC MESFETs By Raymond S. Pengelly and Carl W. Janke Cree, Inc. Because
More informationBIASING OF CONSTANT CURRENT MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010)
BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer
More informationApplication Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY)
FREQUENY LINEAR TUNING VARATORS FREQUENY LINEAR TUNING VARATORS For several decades variable capacitance diodes (varactors) have been used as tuning capacitors in high frequency circuits. Most of these
More informationunit:mm 3022A-DIP12F 0.5 0.81 2.54
Ordering number:enn1718b Monolithic Linear IC LA4550 2-Channel AF Power Amplifier for Radio, Tape Recorder Use Features Low quiescent current. On-chip 2 channels permitting use in stereo and bridge amplifier
More informationApplication Note No. 143
Application Note, Rev. 1.2, February 2008 Application Note No. 143 A Low-Cost Low Noise Amplifier + Bandpass Filter Rx Front End for Improved-Sensitivity / Enhanced Range 315 and 434 MHz RKE Applications
More informationLM118/LM218/LM318 Operational Amplifiers
LM118/LM218/LM318 Operational Amplifiers General Description The LM118 series are precision high speed operational amplifiers designed for applications requiring wide bandwidth and high slew rate. They
More informationUnderstanding Power Impedance Supply for Optimum Decoupling
Introduction Noise in power supplies is not only caused by the power supply itself, but also the load s interaction with the power supply (i.e. dynamic loads, switching, etc.). To lower load induced noise,
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics B3 - Using nonlinearity» Tuned amplifier» Frequency multiplier» Gain compressor» Adding feedback AY 2015-16 15/03/2016-1 ATLCE
More informationHeterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally
More information2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS
2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V
More informationLM566C Voltage Controlled Oscillator
LM566C Voltage Controlled Oscillator General Description The LM566CN is a general purpose voltage controlled oscillator which may be used to generate square and triangular waves the frequency of which
More informationApplication Note SAW-Components
Application Note SAW-Components Principles of SAWR-stabilized oscillators and transmitters. App: Note #1 This application note describes the physical principle of SAW-stabilized oscillator. Oscillator
More informationMATRIX TECHNICAL NOTES
200 WOOD AVENUE, MIDDLESEX, NJ 08846 PHONE (732) 469-9510 FAX (732) 469-0418 MATRIX TECHNICAL NOTES MTN-107 TEST SETUP FOR THE MEASUREMENT OF X-MOD, CTB, AND CSO USING A MEAN SQUARE CIRCUIT AS A DETECTOR
More information6.101 Final Project Report Class G Audio Amplifier
6.101 Final Project Report Class G Audio Amplifier Mark Spatz 4/3/2014 1 1 Introduction For my final project, I designed and built a 150 Watt audio amplifier to replace the underpowered and unreliable
More informationMEASUREMENT UNCERTAINTY IN VECTOR NETWORK ANALYZER
MEASUREMENT UNCERTAINTY IN VECTOR NETWORK ANALYZER W. Li, J. Vandewege Department of Information Technology (INTEC) University of Gent, St.Pietersnieuwstaat 41, B-9000, Gent, Belgium Abstract: Precision
More informationINTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components
More informationDC to 30GHz Broadband MMIC Low-Power Amplifier
DC to 30GHz Broadband MMIC Low-Power Amplifier Features Integrated LFX technology: Simplified low-cost assembly Drain bias inductor not required Broadband 45GHz performance: Good gain (10 ± 1.25dB) 14.5dBm
More informationOp Amp Circuit Collection
Op Amp Circuit Collection Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1 Basic Circuits Inverting Amplifier Difference
More informationThe New Radio Receiver Building Handbook
The New Radio Receiver Building Handbook And Related Radio Subjects Vacuum Tube and Transistor Shortwave Radio Receivers by Lyle Russell Williams, BSEE KC5KBG Copyright 2006 by Lyle Russell Williams All
More informationElectronics for Analog Signal Processing - II Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology Madras
Electronics for Analog Signal Processing - II Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology Madras Lecture - 18 Wideband (Video) Amplifiers In the last class,
More information2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase
More informationAmplified High Speed Fiber Photodetectors
Amplified High Speed Fiber Photodetectors User Guide (800)697-6782 sales@eotech.com www.eotech.com Page 1 of 7 EOT AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE Thank you for purchasing your Amplified
More informationRF SYSTEM DESIGN OF TRANSCEIVERS FOR WIRELESS COMMUNICATIONS
RF SYSTEM DESIGN OF TRANSCEIVERS FOR WIRELESS COMMUNICATIONS Qizheng Gu Nokia Mobile Phones, Inc. 4y Springer Contents Preface xiii Chapter 1. Introduction 1 1.1. Wireless Systems 1 1.1.1. Mobile Communications
More informationMPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
More informationApplication Note, Rev.1.0, September 2008 TLE8366. Application Information. Automotive Power
Application Note, Rev.1.0, September 2008 TLE8366 Automotive Power Table of Contents 1 Abstract...3 2 Introduction...3 3 Dimensioning the Output and Input Filter...4 3.1 Theory...4 3.2 Output Filter Capacitor(s)
More informationElectronic Circuits Workshop Snap Circuits
Electronic Circuits Workshop Snap Circuits LEARNING GOALS: After the completion of this workshop, students will understand: 1. The basic components of an electronic circuit 2. How these components work
More informationPrecision Diode Rectifiers
by Kenneth A. Kuhn March 21, 2013 Precision half-wave rectifiers An operational amplifier can be used to linearize a non-linear function such as the transfer function of a semiconductor diode. The classic
More informationAn equivalent circuit of a loop antenna.
3.2.1. Circuit Modeling: Loop Impedance A loop antenna can be represented by a lumped circuit when its dimension is small with respect to a wavelength. In this representation, the circuit parameters (generally
More information2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter
More informationICS379. Quad PLL with VCXO Quick Turn Clock. Description. Features. Block Diagram
Quad PLL with VCXO Quick Turn Clock Description The ICS379 QTClock TM generates up to 9 high quality, high frequency clock outputs including a reference from a low frequency pullable crystal. It is designed
More informationAPPLICATION BULLETIN
APPLICATION BULLETIN Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Telex: 066-6491 FAX (520) 889-1510 Product Info: (800) 548-6132
More informationLM381 LM381A Low Noise Dual Preamplifier
LM381 LM381A Low Noise Dual Preamplifier General Description The LM381 LM381A is a dual preamplifier for the amplification of low level signals in applications requiring optimum noise performance Each
More informationDiode Applications. by Kenneth A. Kuhn Sept. 1, 2008. This note illustrates some common applications of diodes.
by Kenneth A. Kuhn Sept. 1, 2008 This note illustrates some common applications of diodes. Power supply applications A common application for diodes is converting AC to DC. Although half-wave rectification
More informationElectronics. Discrete assembly of an operational amplifier as a transistor circuit. LD Physics Leaflets P4.2.1.1
Electronics Operational Amplifier Internal design of an operational amplifier LD Physics Leaflets Discrete assembly of an operational amplifier as a transistor circuit P4.2.1.1 Objects of the experiment
More informationRF Measurements Using a Modular Digitizer
RF Measurements Using a Modular Digitizer Modern modular digitizers, like the Spectrum M4i series PCIe digitizers, offer greater bandwidth and higher resolution at any given bandwidth than ever before.
More informationDRM compatible RF Tuner Unit DRT1
FEATURES DRM compatible RF Tuner Unit DRT1 High- Performance RF Tuner Frequency Range: 10 KHz to 30 MHz Input ICP3: +13,5dBm, typ. Noise Figure @ full gain: 14dB, typ. Receiver Factor: -0,5dB, typ. Input
More informationSiGe:C Low Noise High Linearity Amplifier
Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and
More informationTransistor Characteristics and Single Transistor Amplifier Sept. 8, 1997
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationhandbook, 2 columns handbook, halfpage 085 CS
FEATURES Polarized aluminium electrolytic capacitors, non-solid, self healing Extended voltage and capacitance range SMD-version, fully moulded, insulated Flexible terminals, reflow and wave solderable
More informationDATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
More informationTLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009
May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5050/D The MPX5050 series piezoresistive transducer is a state of the art monolithic silicon pressure sensor designed for a wide range of applications,
More information11: AUDIO AMPLIFIER I. INTRODUCTION
11: AUDIO AMPLIFIER I. INTRODUCTION The properties of an amplifying circuit using an op-amp depend primarily on the characteristics of the feedback network rather than on those of the op-amp itself. A
More informationBJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008
by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 Introduction This note will discuss AC analysis using the beta, re transistor model shown in Figure 1 for the three types of amplifiers: common-emitter,
More informationTx/Rx A high-performance FM receiver for audio and digital applicatons
Tx/Rx A high-performance FM receiver for audio and digital applicatons This receiver design offers high sensitivity and low distortion for today s demanding high-signal environments. By Wayne C. Ryder
More informationLM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
More informationAluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
More informationRF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency
More informationProgrammable Single-/Dual-/Triple- Tone Gong SAE 800
Programmable Single-/Dual-/Triple- Tone Gong Preliminary Data SAE 800 Bipolar IC Features Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones
More informationDESIGN OF CLASS-E RADIO FREQUENCY POWER AMPLIFIER. Saad Al-Shahrani DOCTOR OF PHILOSOPHY. Electrical Engineering.
DESIGN OF CLASS-E RADIO FREQUENCY POWER AMPLIFIER by Saad Al-Shahrani Dissertation submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements
More informationSymbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8
Product Description Sirenza Microdevices SGC-689Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides
More informationVdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
More informationSeries AMLDL-Z Up to 1000mA LED Driver
FEATURES: Click on Series name for product info on aimtec.com Series Up to ma LED Driver Models Single output Model Input Voltage (V) Step Down DC/DC LED driver Operating Temperature range 4ºC to 85ºC
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output Description The NY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence
More informationMITSUBISHI RF MOSFET MODULE RA07H4047M
MITSUBISHI RF MOSFET MODULE RA7H7M RoHS Compliance,-7MHz 7W.V, Stage Amp. For PORTABLE RADIO DESCRIPTION The RA7H7M is a 7-watt RF MOSFET Amplifier Module for.-volt portable radios that operate in the
More informationAugust 2001 PMP Low Power SLVU051
User s Guide August 2001 PMP Low Power SLVU051 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service
More informationAN105. Introduction: The Nature of VCRs. Resistance Properties of FETs
Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential
More informationK817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic
More informationLM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.
LM 358 Op Amp S k i l l L e v e l : I n t e r m e d i a t e OVERVIEW The LM 358 is a duel single supply operational amplifier. As it is a single supply it eliminates the need for a duel power supply, thus
More information