Functional Diagram ANODE CATHODE

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1 High Bandwidth, Analog/Video Optocouplers Technical Data Features Wide Bandwidth [] : 7 MHz () 9 MHz () High Voltage Gain [] : 2. (). () Low G V Temperature Coefficient: -.%/ C Highly Linear at Low Drive Currents High-Speed AlGaAs Emitter Safety Approval UL Recognized - 75 V rms for minute (5 V rms for minute for HCPL- 4562#2 and ) per UL 577 CSA Approved IEC/EN/DIN EN Approved -V IORM = 44 V peak for Available in 8-Pin DIP and Widebody Packages Applications Video Isolation for the Following Standards/ Formats: NTSC, PAL, SECAM, S-VHS, ANALOG RGB Low Drive Current Feedback Element in Switching Power Supplies, e.g., for ISDN Networks A/D Converter Signal Isolation Analog Signal Ground Isolation High Voltage Insulation Functional Diagram NC ANODE CATHODE V CC V B V O NC 4 5 GND Description The and optocouplers provide wide bandwidth isolation for analog signals. They are ideal for video isolation when combined with their application circuit (Figure 4). High linearity and low phase shift are achieved through an AlGaAs LED combined with a high speed detector. These single channel optocouplers are available in 8-Pin DIP and Widebody package configurations. CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

2 2 Selection Guide Single Channel Packages 8-Pin DIP Widebody ( Mil) (4 Mil) Ordering Information Specify Part Number followed by Option Number (if desired). Example: #XXXX 2 = UL 5 V rms/ Minute Option* = Gull Wing Surface Mount Option 5 = Tape and Reel Packaging Option XXXE = Lead Free Option Option data sheets are available. Contact your Agilent sales representative or authorized distributor for information. *For only. Gull wing surface mount option applies to through hole parts only. Remarks: The notation # is used for existing products, while (new) products launched since 5th July 2 and lead free option will use - Schematic ANODE 2 + I CC 8 V CC I F V F CATHODE I O 6 V O 5 GND I B 7 V B

3 UR Package Outline Drawings 8-Pin DIP Package () 9.65 ±.25 (.8 ±.) 7.62 ±.25 (. ±.) TYPE NUMBER 8 7 A XXXXZ 6 5 OPTION CODE* DATE CODE 6.5 ±.25 (.25 ±.) YYWW 2 4 UL RECOGNITION.9 (.47) MAX..56 ±. (.4 ±.5).78 (.7) MAX. 4.7 (.85) MAX. 5 TYP (. +.) -.2) 2.92 (.5) MIN..5 (.2) MIN..8 ±.2 (.4 ±.).65 (.25) MAX ±.25 (. ±.) DIMENSIONS IN MILLIMETERS AND (INCHES). * MARKING CODE LETTER FOR OPTION NUMBERS "L" = OPTION 2 OPTION NUMBERS AND 5 NOT MARKED. NOTE: FLOATING LEAD PROTRUSION IS.25 mm ( mils) MAX. 8-Pin DIP Package with Gull Wing Surface Mount Option () LAND PATTERN RECOMMENDATION 9.65 ±.25 (.8 ±.).6 (.4) ±.25 (.25 ±.).9 (.4) (.5) 2. (.8).9 (.47) MAX..78 (.7) MAX..56 ±. (.4 ±.5) 9.65 ±.25 (.8 ±.) 7.62 ±.25 (. ±.) (. +.) -.2).8 ±.2 (.4 ±.) ±. (.) (.25 ±.5) BSC DIMENSIONS IN MILLIMETERS (INCHES). LEAD COPLANARITY =. mm (.4 INCHES)..65 ±.25 (.25 ±.) 2 NOM. NOTE: FLOATING LEAD PROTRUSION IS.25 mm ( mils) MAX.

4 4 8-Pin Widebody DIP Package () 8.5 ±.5 (.442 ±.6) 7 6 A HCNWXXXX YYWW 5 TYPE NUMBER DATE CODE. MAX. (.4) 9. ±.5 (.54 ±.6) (.6) MAX. 7 TYP. 5. (.2) MAX..6 (.4) TYP (. +.) -.2). (.22).9 (.54).5 (.2) MIN (.) TYP..78 ±.5 (.7 ±.6).4 (.6).56 (.22) DIMENSIONS IN MILLIMETERS (INCHES). NOTE: FLOATING LEAD PROTRUSION IS.25 mm ( mils) MAX. 8-Pin Widebody DIP Package with Gull Wing Surface Mount Option ().5 ±.5 (.442 ±.6) LAND PATTERN RECOMMENDATION ±.5 (.54 ±.6).56 (.54) 2 4. (.5) 2.29 (.9).55 (.6) MAX. 2. ±. (.484 ±.2). MAX. (.4) 4. (.58) MAX..78 ±.5 (.7 ±.6) 2.54 (.) BSC DIMENSIONS IN MILLIMETERS (INCHES)..75 ±.25 (. ±.) LEAD COPLANARITY =. mm (.4 INCHES).. ±.5 (.9 ±.6) 7 NOM (. +.) -.2) NOTE: FLOATING LEAD PROTRUSION IS.25 mm ( mils) MAX.

5 5 Solder Reflow Temperature Profile TEMPERATURE ( C) 2 PREHEATING RATE C + C/.5 C/SEC. REFLOW HEATING RATE 2.5 C ±.5 C/SEC. 6 C 5 C 4 C C + C/.5 C 2.5 C ±.5 C/SEC. PREHEATING TIME 5 C, 9 + SEC. PEAK TEMP. 245 C SEC. SEC. 5 SEC. PEAK TEMP. 24 C SOLDERING TIME 2 C PEAK TEMP. 2 C ROOM TEMPERATURE TIME (SECONDS) TIGHT TYPICAL LOOSE Recommended Pb-Free IR Profile TEMPERATURE T p 26 +/-5 C T L 27 C RAMP-UP C/SEC. MAX. T smax 5-2 C T smin t s PREHEAT 6 to 8 SEC. t p t L TIME WITHIN 5 C of ACTUAL PEAK TEMPERATURE 2-4 SEC. RAMP-DOWN 6 C/SEC. MAX. 6 to 5 SEC. 25 t 25 C to PEAK TIME NOTES: THE TIME FROM 25 C to PEAK TEMPERATURE = 8 MINUTES MAX. T smax = 2 C, T smin = 5 C Regulatory Information The devices contained in this data sheet have been approved by the following organizations: UL Recognized under UL 577, Component Recognition Program, File E556. CSA Approved under CSA Component Acceptance Notice #5, File CA IEC/EN/DIN EN Approved under: IEC :997 + A:22 EN :2 + A:22 DIN EN (VDE 884 Teil 2):2- ( only)

6 6 Insulation and Safety Related Specifications 8-Pin DIP Widebody ( Mil) (4 Mil) Parameter Symbol Value Value Units Conditions Minimum External L() mm Measured from input terminals to Air Gap (External output terminals, shortest distance Clearance) through air. Minimum External L(2) 7.4. mm Measured from input terminals to Tracking (External output terminals, shortest distance Creepage) path along body. Minimum Internal.8. mm Through insulation distance, Plastic Gap conductor to conductor, usually the (Internal Clearance) direct distance between the photoemitter and photodetector inside the optocoupler cavity. Minimum Internal NA 4. mm Measured from input terminals to Tracking (Internal output terminals, along internal cavity. Creepage) Tracking Resistance CTI 2 2 Volts DIN IEC 2/VDE Part (Comparative Tracking Index) Isolation Group IIIa IIIa Material Group (DIN VDE, /89, Table ) Option - surface mount classification is Class A in accordance with CECC 82. IEC/EN/DIN EN Insulation Related Characteristics ( ONLY) Description Symbol Characteristic Units Installation classification per DIN VDE /.89, Table for rated mains voltage 6 V rms I-IV for rated mains voltage V rms Climatic Classification 55/85/2 Pollution Degree (DIN VDE /.89) 2 Maximum Working Insulation Voltage V IORM 44 V peak Input to Output Test Voltage, Method b* V IORM x.875 = V PR, % Production Test with t m = sec, V PR 2652 V peak Partial Discharge < 5 pc Input to Output Test Voltage, Method a* V IORM x.5 = V PR, Type and sample test, V PR 22 V peak t m = 6 sec, Partial Discharge < 5 pc Highest Allowable Overvoltage* (Transient Overvoltage, t ini = sec) V IOTM 8 V peak Safety Limiting Values (Maximum values allowed in the event of a failure, also see Figure 7, Thermal Derating curve.) Case Temperature T S 5 C Input Current I S,INPUT 4 ma Output Power P S,OUTPUT 7 mw Insulation Resistance at T S, V IO = 5 V R S 9 Ω *Refer to the front of the optocoupler section of the current catalog, under Product Safety Regulations section IEC/EN/DIN EN , for a detailed description. Note: Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application. I-III

7 7 Absolute Maximum Ratings Parameter Symbol Device Min. Max. Units Note Storage Temperature T S C Operating Temperature T A C Average Forward Input Current I F(avg) 2 ma 25 Peak Forward Input Current I F(PEAK) 8.6 ma 4 Effective Input Current I F(EFF) 2.9 ma rms Reverse LED Input Voltage (Pin -2) V R.8 V Input Power Dissipation P IN 4 mw Average Output Current (Pin 6) I O(AVG) 8 ma Peak Output Current (Pin 6) I O(PEAK) 6 ma Emitter-Base Reverse Voltage (Pin 5-7) V EBR 5 V Supply Voltage (Pin 8-5) V CC -. V Output Voltage (Pin 6-5) V O -. 2 V Base Current (Pin 7) I B 5 ma Output Power Dissipation P O mw 2 Lead Solder Temperature T LS 26 C.6 mm Below Seating Plane, Seconds up to Seating Plane, Seconds 26 C Reflow Temperature Profile T RP Option See Package Outline Drawings Section Recommended Operating Conditions Parameter Symbol Device Min. Max. Units Note Operating Temperature T A - 7 C Quiescent Input Current I FQ 6 ma Peak Input Current I F(PEAK) ma 7

8 8 Electrical Specifications (DC) T A = 25 C, I F = 6 ma for and I F = ma for (i.e., Recommended I FQ ) unless otherwise specified. Parameter Symbol Device Min. Typ.* Max. Units Test Conditions Fig. Note Base Photo I PB 65 µa I F = ma V PB 5 V 2, 6 Current 9.2 I F = 6 ma I PB I PB / -. %/ C 2 ma < I F < ma, 2 Temperature T V PB 5 V Coefficient I PB.25 % 2 ma < I F < ma 2, 6 Nonlinearity.5 6 ma < I F < 4 ma Input Forward V F...6 V I F = 5 ma 5 Voltage I F = ma Input Reverse BV R.8 5 V I R = µa Breakdown I R = µa Voltage Transistor h FE 6 6 I C = ma, Current Gain V CE =.25 V Current CTR 45 % V CE =.25 V, 8, 9 4 Transfer Ratio 52 V PB 5 V DC Output V OUT 4.25 V G V = 2, V CC = 9 V 4, Voltage 5. 5

9 9 Small Signal Characteristics (AC) T A = 25 C, I F = 6 ma for and I F = ma for (i.e., Recommended I FO ) unless otherwise specified. Parameter Symbol Device Min. Typ.* Max. Units Test Conditions Fig. Note Voltage Gain G V V IN = V P-P 6 (. MHz). G V Temperature G V / T -. %/ C V IN = V P-P,, Coefficient f REF =. MHz Base Photo i PB.. -db V IN = V P-P,,, Current (6 MHz).6 f REF =. MHz 2 Variation - db Frequency i PB 6 5 MHz V IN = V P-P,,, 7 (i PB ) (- db) f REF =. MHz 2 - db Frequency G V 6 7 MHz V IN = V P-P,, 7 (G V ) (- db) 9 f REF =. MHz Gain Variation G V.. -db T A = 25 C V IN = V P-P,, (6 MHz).54 f REF =. MHz.8 T A = - C.5 T A = 7 C G V.5 -db V IN = V P-P, ( MHz) 2.27 f REF =. MHz Differential ±. % I Fac =.7 ma p-p,, 7 8 Gain at I Fdc = to 9 ma f =.58 MHz ±.9 I Fac = ma p-p, I Fdc = 7 to ma Differential ± deg. I Fac =.7 ma p-p,, 7 9 Phase at I Fdc = to 9 ma f =.58 MHz ±.6 I Fac = ma p-p, I Fdc = 7 to ma Total Harmonic THD 2.5 % V IN = V P-P, 4 Distortion.75 f =.58 MHz, G V = 2 Output Noise V O (noise) 95 µv rms Hz to MHz Voltage Isolation Mode IMRR 22 db f = 2 Hz, G V = 2 4 Rejection Ratio 9

10 Package Characteristics All Typicals at T A = 25 C Parameter Sym. Device Min. Typ. Max. Units Test Conditions Fig. Note Input-Output V ISO 75 V rms RH 5%, 5, 2 Momentary 5 t = min., 5, Withstand 5 T A = 25 C 5, Voltage* (Option 2) Input-Output R I-O 2 Ω V I-O = 5 Vdc 5 Resistance 2 T A = 25 C T A = C Input-Output C I-O.6 pf f = MHz 5 Capacitance.5.6 *The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating refer to the VDE 884 Insulation Related Characteristics Table (if applicable), your equipment level safety specification or Agilent Application Note 74 entitled Optocoupler Input-Output Endurance Voltage, publication number E. Notes:. When used in the circuit of Figure or Figure 4; G V = V OUT /V IN ; I FQ = 6 ma (), I FQ = ma (). 2. Derate linearly above 7 C free-air temperature at a rate of 2. mw/ C ().. Maximum variation from the best fit line of I PB vs. I F expressed as a percentage of the peak-to-peak full scale output. 4. CURRENT TRANSFER RATIO (CTR) is defined as the ratio of output collector current, I O, to the forward LED input current, I F, times %. 5. Device considered a two-terminal device: Pins, 2,, and 4 shorted together and Pins 5, 6, 7, and 8 shorted together. 6. Flat-band, small-signal voltage gain. 7. The frequency at which the gain is db below the flat-band gain. 8. Differential gain is the change in the small-signal gain of the optocoupler at.58 MHz as the bias level is varied over a given range. 9. Differential phase is the change in the small-signal phase response of the optocoupler at.58 MHz as the bias level is varied over a given range.. TOTAL HARMONIC DISTORTION (THD) is defined as the square root of the sum of the square of each harmonic distortion component. The THD of the isolated video circuit is measured using a 2.6 kω load in series with the 5 Ω input impedance of the spectrum analyzer.. ISOLATION MODE REJECTION RATIO (IMRR), a measure of the optocoupler s ability to reject signals or noise that may exist between input and output terminals, is defined by 2 log [(V OUT /V IN )/(V OUT /V IM )], where V IM is the isolation mode voltage signal. 2. In accordance with UL 577, each optocoupler is proof tested by applying an insulation test voltage 45 V rms for second (leakage detection current limit, I I-O 5 µa). This test is performed before the % Production test shown in the IEC/EN/DIN EN Insulation Related Characteristics Table, if applicable.. In accordance with UL 577, each optocoupler is proof tested by applying an insulation test voltage 6 V rms for second (leakage detection current limit, I I-O 5 µa). This test is performed before the % Production test shown in the IEC/EN/DIN EN Insulation Related Characteristics Table, if applicable.

11 62 Ω () 9.9 Ω () Figure. Gain and Bandwidth Test Circuit. 62 Ω () 9.9 Ω () Figure 2. Base Photo Current Test Circuit. Figure. Base Photo Current Frequency Response Test Circuit. Figure 4. Recommended Isolated Video Interface Circuit.

12 2 I F INPUT FORWARD VOLTAGE ma.... I F + V F T A = 7 C..2. T A = - C.4 V F FORWARD VOLTAGE V.5 Figure 5. Input Current vs. Forward Voltage. 8 I PB BASE PHOTO CURRENT µa V PB > 5 V I F INPUT CURRENT ma Figure 6. Base Photo Current vs. Input Current..2 2 SMALL-SIGNAL GAIN NORMALIZED I F = 6 ma f =.58 MHz SEE FIG. PHASE GAIN SMALL-SIGNAL PHASE DEGREES I F INPUT CURRENT ma Figure 7. Small-Signal Response vs. Input Current.

13 NORMALIZED CURRENT TRANSFER RATIO NORMALIZED I F = 6. ma V CE =.25 V V PB > 5 V T TEMPERATURE C Figure 8. Current Transfer Ratio vs. Temperature. CTR NORMALIZED CURRENT TRANSFER RATIO NORMALIZED I F = 6 ma V CE =.25 V V PB > 5 V V CE = 5. V V CE =.25 V V CE =.4 V I F INPUT CURRENT ma 2 Figure 9. Current Transfer Ratio vs. Input Current. i PB BASE PHOTO CURRENT VARIATION db FREQUENCY = 6 MHz FREQUENCY = MHz F REF =. MHz 9 2 I FQ QUIESCENT INPUT CURRENT ma 8 Figure. Base Photo Current Variation vs. Bias Conditions.

14 4 NORMALIZED VOLTAGE GAIN db T A = - C T A = 7 C NORMALIZED f =. MHz,, f FREQUENCY KHz Figure. Normalized Voltage Gain vs. Frequency. NORMALIZED BASE PHOTO CURRENT db NORMALIZED f =. MHz,, f FREQUENCY KHz Figure 2. Normalized Base Photo Current vs. Frequency. PHASE DEGREES VIDEO INTERFACE CIRCUIT PHASE SEE FIGURE 4 8 I PB PHASE SEE FIGURE f FREQUENCY MHz 2 Figure. Phase vs. Frequency.

15 5 IMRR ISOLATION MODE REJECTION RATIO db db/decade SLOPE G IMRR = 2 LOG v v OUT/ v IM f FREQUENCY KHz, Figure 4. Isolation Mode Rejection Ratio vs. Frequency. 6. V O DC OUTPUT VOLTAGE V h FE TRANSISTOR CURRENT GAIN Figure 5. DC Output Voltage vs. Transistor Current Gain. Q R 9 R Q 4 I CQ4 = 2 ma R Q 5 R 2 V CC ADDITIONAL BUFFER STAGE V OUT LOW IMPEDANCE LOAD OUTPUT POWER P S, INPUT CURRENT I S P S (mw) I S (ma) T S CASE TEMPERATURE C 75 Figure 6. Output Buffer Stage for Low Impedance Loads. Figure 7. Thermal Derating Curve, Dependence of Safety Limiting Value with Case Temperature per IEC/EN/ DIN EN

16 Conversion from to In order to obtain similar circuit performance when converting from the to the, it is recommended to increase the Quiescent Input Current, I FQ, from 6 ma to ma. If the application circuit in Figure 4 is used, then potentiometer R4 should be adjusted appropriately. Design Considerations of the Application Circuit The application circuit in Figure 4 incorporates several features that help maximize the bandwidth performance of the /. Most important of these features is peaked response of the detector circuit that helps extend the frequency range over which the voltage gain is relatively constant. The number of gain stages, the overall circuit topology, and the choice of DC bias points are all consequences of the desire to maximize bandwidth performance. To use the circuit, first select R to set V E for the desired LED quiescent current by: V E G V V E R I FQ = () R 4 ( I PB / I F ) R 7 R 9 For a constant value V INp-p, the circuit topology (adjusting the gain with R 4 ) preserves linearity by keeping the modulation factor (MF) dependent only on V E. i Fp-p V IN /R 4 (2) p-p i Fp-p i PBp-p V INp-p = () I FQ I PBQ V E Modulation i F(p-p) V INp-p Factor (MF): = (4) 2 I FQ 2 V E For a given G V, V E, and V CC, DC output voltage will vary only with h FEX. R 9 R V O = V CC V BE [V BEX (I PBQ I BXQ ) R 7 ] (5) 4 Where: G V V E R I PBQ (6) R 7 R 9 and, V CC 2 V I BE BXQ (7) R 6 h FEX Figure 5 shows the dependency of the DC output voltage on h FEX. For 9 V < V CC < 2 V, select the value of R such that V O 4.25 V I CQ4 9. ma (8) 47 Ω R The voltage gain of the second stage (Q ) is approximately equal to: R 9 * (9) R + s R 9 C CQ + 2π R f T4 Increasing R (R includes the parallel combination of R and the load impedance) or reducing R 9 (keeping R 9 /R ratio constant) will improve the bandwidth. If it is necessary to drive a low impedance load, bandwidth may also be preserved by adding an additional emitter following the buffer stage (Q 5 in Figure 6), in which case R can be increased to set I CQ4 2 ma. Finally, adjust R 4 to achieve the desired voltage gain. V OUT I PB R 7 R 9 G V () V IN I F R 4 R I where typically PB =.2 I F Definition: G V = Voltage Gain I FQ = Quiescent LED forward current i Fp-p = Peak-to-peak small signal LED forward current V INp-p = Peak-to-peak small signal input voltage i PBp-p = Peak-to-peak small signal base photo current I PBQ = Quiescent base photo current V BEX = Base-Emitter voltage of / transistor I BXQ = Quiescent base current of / transistor h FEX = Current Gain (I C /I B ) of / transistor V E = Voltage across emitter degeneration resistor R 4 f T = Unity gain frequency of Q 4 5 C CQ = Effective capacitance from collector of Q to ground SemiconductorSupport@agilent.com Data subject to change. Copyright 25 Agilent Technologies, Inc. Obsoletes EN March, EN

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