HSMS-282x Surface Mount RF Schottky Barrier Diodes. Data Sheet. Description/Applications. Features. Package Lead Code Identification, SOT-363

Transcription

1 HSMS-282x Surfac Mount RF Schottky arrir iods ata Sht scription/pplications Ths Schottky diods ar spcifically dsignd for both analog and digital applications. This sris offrs a wid rang of spcifica tions and packag con figura tions to giv th dsignr wid flxi bility. Typical applications of ths Schottky diods ar mixing, dtcting, switching, sampling, clamping, and wav shaping. Th HSMS 282x sris of diods is th bst all-around choic for most applications, faturing low sris rsistanc, low forward voltag at all currnt lvls and good RF charactristics. Not that vago s manufacturing tchniqus assur that dic found in pairs and quads ar takn from adjacnt sits on th wafr, assuring th highst dgr of match. Packag ad od Idntification, SOT-23/SOT-43 (Top Viw) SING 3 SRIS 3 OMMON NO 3 OMMON THO 3 Faturs ow Turn-On Voltag (s ow as 0.34 V at m) ow FIT (Failur in Tim) Rat* Six-sigma Quality vl Singl, ual and Quad Vrsions Uniqu onfigurations in Surfac Mount SOT-363 Packag incras flxibility sav board spac rduc cost HSMS-282K Groundd ntr ads Provid up to 0 d Highr Isolation Matchd iods for onsistnt Prformanc ttr Thrmal onductivity for Highr Powr issipation ad-fr Option vailabl * For mor information s th Surfac Mount Schottky Rliability ata Sht. Packag ad od Idntification, SOT-363 (Top Viw) HIGH ISOTION UNONNT PIR UNONNT TRIO #0 2 #2 2 #3 2 #4 2 3 K 2 3 UNONNT PIR 3 4 RING QU 3 4 RIG QU 3 4 ROSS-OVR QU 3 4 OMMON THO QU OMMON NO QU #5 2 #7 2 #8 Packag ad od Idntification, SOT-323 (Top Viw) 2 #9 2 3 M RIG QU N RING QU SING SRIS 2 3 P 2 3 R OMMON NO OMMON THO F

2 Pin onnctions and Packag Marking GUx 5 4 Nots:. Packag marking provids orintation and idntification. 2. S lctrical Spcifications for appropriat packag marking. bsolut Maximum Ratings [] T = 25 2 Symbol Paramtr Unit SOT-23 / SOT-43 SOT-323/SOT-363 I f Forward urrnt ( µs Puls) mp P IV Pak Invrs Voltag V 5 5 T j Junction Tmpratur T stg Storag Tmpratur -65 to to 50 θ jc Thrmal Rsistanc [2] /W Nots:. Opration in xcss of any on of ths conditions may rsult in prmannt damag to th dvic. 2. T = +25, whr T is dfind to b th tmpratur at th packag pins whr contact is mad to th circuit board. lctrical Spcifications T = 25, Singl iod [3] Part Numbr HSMS [4] Packag Marking od ad od onfiguration Minimum rakdown Voltag V R (V) Maximum Forward Voltag V F (mv) Maximum Forward Voltag V F I F (m) Maximum Rvrs akag I R V R (V) Maximum apacitanc T (pf) Singl Sris ommon nod ommon athod Unconnctd Pair Ring Quad [4] ridg Quad [4] ross-ovr Quad Singl Sris ommon nod 282F 4 F ommon athod 282K K K High Isolation Unconnctd Pair 282 Unconnctd Trio 282M HH M ommon athod Quad 282N NN N ommon nod Quad 282P P P ridg Quad 282R OO R Ring Quad Tst onditions I R = 00 m I F = m [] V R = 0V [2] Nots:. V F for diods in pairs and quads in 5 mv maximum at m. 2. TO for diods in pairs and quads is 0.2 pf maximum. 3. ffctiv arrir iftim (τ) for all ths diods is 00 ps maximum masurd with Krakaur mthod at 5 m. 4. S sction titld Quad apacitanc. 5. R = R S + 5.2Ω at 25 and I f = 5 m. f = MHz Typical ynamic Rsistanc R (Ω) [5] I F = 5 m

3 Quad apacitanc apacitanc of Schottky diod quads is masurd using an HP427 R mtr. This instrumnt ffctivly isolats individual diod branchs from th othrs, allowing accurat capacitanc masurmnt of ach branch or ach diod. Th conditions ar: 20 mv R.M.S. voltag at MHz. vago dfins this masurmnt as M, and it is quivalnt to th capaci tanc of th diod by itslf. Th quivalnt diagonal and adja cnt capaci-tancs can thn b calculatd by th formulas givn blow. In a quad, th diagonal capaci tanc is th capacitanc btwn points and as shown in th figur blow. Th diagonal capacitanc is calculatd using th following formula x 2 3 x 4 IGON = Th JNT quivalnt = + adjacnt capacitanc is th capacitanc btwn points x and 2 in 3 x th 4 IGON = figur blow. This capacitanc is calculatd + using 2 2 th following 4 4 formula R j 8.33 X 0-5 nt JNT = + I b + I s This information R dos not apply to cross-ovr quad diods. I b + I j = 8.33 X 0-5 nt s inar quivalnt ircuit Modl iod hip R S R S = sris rsistanc (s Tabl of SPI paramtrs) S WRNING: Handling Prcautions Should Takn To void Static ischarg. SPI Paramtrs Paramtr Units HSMS-282x R j j j = junction capacitanc (s Tabl of SPI paramtrs) R j = 8.33 X 0-5 nt I b + I s whr I b = xtrnally applid bias currnt in amps I s = saturation currnt (s tabl of SPI paramtrs) T = tmpratur, K n = idality factor (s tabl of SPI paramtrs) Not: To ffctivly modl th packagd HSMS-282x product, plas rfr to pplication Not N24. V V 5 J0 pf 0.7 G V 0.69 I V -4 I S N.08 R S Ω 6.0 P V 0.65 P T 2 M 0.5 3

4 Typical Prformanc, T = 25 (unlss othrwis notd), Singl iod I F FORWR URRNT (m) T = +25 T = +75 T = +25 T = I R RVRS URRNT (n) 00,000 0, T = +25 T = +75 T = T PITN (pf) V F FORWR VOTG (V) Figur. Forward urrnt vs. Forward Voltag at Tmpraturs. V R RVRS VOTG (V) Figur 2. Rvrs urrnt vs. Rvrs Voltag at Tmpraturs. V R RVRS VOTG (V) Figur 3. Total apacitanc vs. Rvrs Voltag R YNMI RSISTN () I F FORWR URRNT (m) Figur 4. ynamic Rsistanc vs. Forward urrnt. I F - FORWR URRNT (m) 0 I F (ft Scal) V F (Right Scal) V F - FORWR VOTG (V) Figur 5. Typical V f Match, Sris Pairs and Quads at Mixr ias vls. 0 V F - FORWR VOTG IFFRN (mv) I F - FORWR URRNT (µ) 0 I F (ft Scal) V F (Right Scal) V F - FORWR VOTG (V) Figur 6. Typical V f Match, Sris Pairs at tctor ias vls. V F - FORWR VOTG IFFRN (mv) 0 V O OUTPUT VOTG (V) bias = 3 8 nh 3.3 nh HSMS pf K Vo V O OUTPUT VOTG (V) HSMS pf 4.7 K Vo ONVRSION OSS (d) P in INPUT POWR (dm) Figur 7. Typical Output Voltag vs. Input Powr, Small Signal tctor Oprating at 850 MHz P in INPUT POWR (dm) Figur 8. Typical Output Voltag vs. Input Powr, arg Signal tctor Oprating at 95 MHz O OSITOR POWR (dm) Figur 9. Typical onvrsion oss vs..o. riv, 2.0 GHz (Rf N997). 2 4

5 pplications Information Product Slction vago s family of surfac mount Schottky diods provid uniqu solutions to many dsign problms. ach is optimizd for crtain applications. Th first stp in choosing th right product is to slct th diod typ. ll of th products in th HSMS 282x family us th sam diod chip thy diffr only in packag configuration. Th sam is tru of th HSMS-280x, -28x, 285x, -286x and -270x familis. ach family has a diffrnt st of charactristics, which can b compard most asily by consulting th SPI paramtrs givn on ach data sht. Th HSMS 282x family has bn optimizd for us in RF applications, such as biasd small signal dtctors to.5 GHz. iasd or unbiasd larg signal dtctors (G or powr monitors) to 4 GHz. Mixrs and frquncy multiplirs to 6 GHz. Th othr fatur of th HSMS 282x family is its unit to unit and lot to lot consistncy. Th silicon chip usd in this sris has bn dsignd to us th fwst possibl procssing stps to minimiz variations in diod charactristics. Statistical data on th consistncy of this product, in trms of SPI paramtrs, is availabl from vago. For thos applications rquiring vry high brakdown voltag, us th HSMS 280x family of diods. Turn to th HSMS 28x whn you nd vry low flickr nois. Th HSMS 285x is a family of zro bias dtctor diods for small signal applications. For high frquncy dtctor or mixr applications, us th HSMS 286x family. Th HSMS 270x is a sris of spcialty diods for ultra high spd clipping and clamping in digital circuits. Schottky arrir iod haractristics Strippd of its packag, a Schottky barrir diod chip consists of a mtal-smiconductor barrir formd by dposition of a mtal layr on a smiconductor. Th most common of svral diffrnt typs, th passivatd diod, is shown in Figur 0, along with its quivalnt circuit. R S is th parasitic sris rsistanc of th diod, th sum of th bondwir and ladfram rsistanc, th rsistanc of th bulk layr of silicon, tc. RF nrgy coupld into R S is lost as hat it dos not contribut to th rctifid output of th diod. J is parasitic junction capaci tanc of th diod, controlld by th thick-nss of th pitaxial layr and th diamtr of th Schottky contact. R j is th junction rsistanc of th diod, a function of th total currnt flowing through it X 0-5 nt R j = = R V R s I S + I b whr I = I n = idality S ( ) factor (s tabl of SPI paramtrs) T = tmpratur in K I S = saturation currnt (s tabl of SPI paramtrs) I b = xtrnally applid bias currnt in amps R v = sum of junction and sris rsistanc, th slop of th V-I curv I S is a function of diod barrir hight, and can rang from picoamps for high barrir diods to as much as 5 µ for vry low barrir diods X 0 Th Hight of th Schottky -5 nt R j = arrir = R V R s I S + I b Th currnt-voltag charactr istic of a Schottky barrir diod at room 0.026tmpratur is dscribd by th following at 25 quation: I S + I b On a smi-log plot (as shown in th vago catalog) th currnt graph will b a straight lin with invrs slop 2.3 X = volts pr cycl (until th ffct of R S is sn in a curv that droops at high currnt). ll Schottky diod curvs hav th sam slop, but not ncssarily th sam valu of currnt for a givn voltag. This is dtr mind by th saturation currnt, I S, and is rlatd to th barrir hight of th diod. Through th choic of p-typ or n typ silicon, and th slction of mtal, on can tailor th charactristics of a Schottky diod. arrir hight will b altrd, and at th sam tim J and R S will b changd. In gnral, vry low barrir hight diods (with high valus of I S, suitabl for zro bias applica tions) ar ralizd on p-typ silicon. Such diods suffr from highr valus of R S than do th n typ. PSSIVTION at 25 I S + I b V - IR S V - IR S I = I S ( ) MT N-TYP OR P-TYP PI Figur 0. Schottky iod hip. PSSIVTION YR SHOTTKY JUNTION N-TYP OR P-TYP SIION SUSTRT ROSS-STION OF SHOTTKY RRIR IO HIP j R S R j QUIVNT IRUIT 5

6 Thus, p-typ diods ar gnrally rsrvd for dtctor applications (whr vry high valus of R V swamp out high R S ) and n-typ diods such as th HSMS-282x ar usd for mixr applications (whr high.o. driv lvls kp R V low). biasd dtctors and slf-biasd dtctors usd in gain or powr control circuits. tctor pplications tctor circuits can b dividd into two typs, larg signal (P in > 20 dm) and small signal (P in < 20 dm). In gnral, th formr us rsistiv impdanc matching at th input to improv flatnss ovr frquncy this is possibl sinc th input signal lvls ar high nough to produc adquat output voltags without th nd for a high Q ractiv input matching ntwork. Ths circuits ar slf-biasd (no xtrnal bias) and ar usd for gain and powr control of amplifirs. Small signal dtctors ar usd as vry low cost rcivrs, and rquir a ractiv input impdanc matching ntwork to achiv adquat snsitivity and output voltag. Thos oprating with zro bias utiliz th HSMS 285x family of dtctor diods. Howvr, suprior prformanc ovr tmpratur can b achivd with th us of 3 to 30 µ of bias. Such circuits will us th HSMS 282x family of diods if th oprating frquncy is.5 GHz or lowr. Typical prformanc of singl diod dtctors (using HSMS 2820 or HSMS 282) can b sn in th transfr curvs givn in Figurs 7 and 8. Such dtctors can b ralizd ithr as sris or shunt circuits, as shown in Figur. ias Th two diods ar in paralll in th RF circuit, lowring th input impdanc and making th dsign of th RF matching ntwork asir. Th two diods ar in sris in th output (vido) circuit, doubling th output voltag. Som cancllation of vn ordr harmonics taks plac at th input. Zro iasd iods Figur 2. Voltag oublr. iasd iods ias Th most compact and lowst cost form of th doublr is achivd whn th HSMS 2822 or HSMS-282 sris pair is usd. oth th dtction snsitivity and th forward voltag of a biasd Schottky dtctor ar tmpratur snsitiv. Whr both must b compnsatd ovr a wid rang of tmpraturs, th diffrntial dtctor [2] is oftn usd. Such a circuit rquirs that th dtctor diod and th rfrnc diod xhibit idntical charactristics at all bias lvls and at all tmpraturs. This is accomplishd through th us of two diods in on packag, for xampl th HSMS 2825 in Figur 3. In th vago assmbly facility, th two dic in a surfac mount packag ar takn from adjacnt sits on th wafr (as illustratd in Figur 4). This assurs that th charactristics of th two diods ar mor highly matchd than would b possibl through individual tsting and hand matching. Shunt inductor provids vido signal rturn Shunt diod provids vido signal rturn ias RF impdanc matching ntwork RM R diffrntial amplifir Vido out Zro iasd iods iasd iods +3V R Figur. Singl iod tctors. Th sris and shunt circuits can b combind into a voltag doublr [], as shown in Figur 2. Th doublr offrs thr advantags ovr th singl diod circuit. Figur 3. iffrntial tctor. Nots:. vago pplication Not 956 4, Schottky iod Voltag oublr. 2. Raymond W. Waugh, signing arg Signal tctors for Handsts and as Stations, Wirlss Systms sign, Vol. 2, No. 7, July 997, pp

7 bias diffrntial amplifir matching ntwork HSMS-282P Figur 4. Fabrication of vago iod Pairs. In high powr applications, coupling of RF nrgy from th dtctor diod to th rfrnc diod can introduc rror in th diffrntial dtctor. Th HSMS 282K diod pair, in th six lad SOT 363 packag, has a coppr bar btwn th diods that adds 0 d of additional isolation btwn thm. s this part is manufacturd in th SOT 363 packag it also provids th bnfit of bing 40% smallr than largr SOT 43 dvics. Th HSMS 282K is illustratd in Figur 5 not that th ground connctions must b mad as clos to th packag as possibl to minimiz stray inductanc to ground. P dtctor diod V bias Figur 7. Voltag oublr iffrntial tctor. Howvr, car must b takn to assur that th two rfrnc diods closly match th two dtctor diods. On possibl configuration is givn in Figur 6, using two HSMS oard spac can b savd through th us of th HSMS 282P opn bridg quad, as shown in Figur 7. Whil th diffrntial dtctor works wll ovr tmpratur, anothr dsign approach [3] works wll for larg signal dtctors. S Figur 8 for th schmatic and a physical layout of th circuit. In this dsign, th two 4.7 KΩ rsistors and diod 2 act as a variabl powr dividr, assuring constant output voltag ovr tmpratur and improving output linarity. 4.7 K V o pf 4.7 K pf HSMS-282K rfrnc diod to diffrntial amplifir Figur 5. High Powr iffrntial tctor. Th concpt of th voltag doublr can b applid to th diffrntial dtctor, prmitting twic th output voltag for a givn input powr (as wll as improving input impdanc and supprssing scond harmonics). matching ntwork bias HSMS-2825 HSMS-2825 diffrntial amplifir HSMS-2825 or HSMS-282K HSMS-282K Figur 8. Tmpratur ompnsatd tctor. 4.7 K In crtain applications, such as a dual band cllphon handst oprating at both 900 and 800 MHz, th scond harmonics gnratd in th powr control output dtctor whn th handst is working at 900 MHz can caus problms. filtr at th output can rduc unwantd missions at 800 MHz in this cas, but a lowr cost solution is availabl [4]. Illustratd schmatically in Figur 9, this circuit uss diod 2 and its associatd passiv componnts to cancl all vn ordr harmonics at th dtctor s put. iods 3 and 4 provid tmpratur compnsation as dscribd abov. ll four diods ar containd in a singl HSMS 282R packag, as illustratd in th layout shown in Figur 20. V o Figur 6. Voltag oublr iffrntial tctor. Not 3. Hans riksson and Raymond W. Waugh, Tmpratur ompnsatd inar iod tctor, to b publishd. 7

8 2 68 R3 2 V R4 4 R V+ R2 3 oth of ths ntworks rquir a crossovr or a thr dimnsional circuit. planar mixr can b mad using th SOT 43 crossovr quad, HSMS 2829, as shown in Figur 22. In this product, a spcial lad fram prmits th crossovr to b placd insid th plastic packag itslf, liminating th nd for via hols (or othr masurs) in th RF portion of th circuit itslf. = 2 ª 00 pf R = R2 = R3 = R4 = 4.7 K & 2 & 3 & 4 = HSMS-282R HSMS-2829 Figur 9. Schmatic of Supprssd Harmonic tctor. O in HSMS-282R 4.7 K 4.7 K V+ V IF out 00 pf 00 pf Figur 22. Planar oubl alancd Mixr. Figur 20. ayout of Supprssd Harmonic tctor. 68 Not that th forgoing discussion rfrs to th output voltag bing xtractd at point V+ with rspct to ground. If a diffrntial output is takn at V+ with rspct to V, th circuit acts as a voltag doublr. Mixr applications Th HSMS 282x family, with its wid varity of packaging, can b usd to mak xcllnt mixrs at frquncis up to 6 GHz. Th HSMS 2827 ring quad of matchd diods (in th SOT 43 packag) has bn dsignd for doubl balancd mixrs. Th smallr (SOT 363) HSMS-282R ring quad can similarly b usd, if th quad is closd with xtrnal connctions as shown in Figur 2. rviw of Figur 2 may lad to th qustion as to why th HSMS 282R ring quad is opn on th nds. istortion in doubl balancd mixrs can b rducd if O driv is incrasd, up to th point whr th Schottky diods ar drivn into saturation. bov this point, incrasd O driv will not rsult in improvmnts in distortion. Th us of xpnsiv high barrir diods (such as thos fabricatd on Gas) can tak advantag of highr O driv powr, but a lowr cost solution is to us a ight (or twlv) diod ring quad. Th opn dsign of th HSMS-282R prmits this to asily b don, as shown in Figur 23. O in HSMS-282R Figur 23. ow istortion oubl alancd Mixr. IF out O in HSMS-282R This sam tchniqu can b usd in th singl-balancd mixr. Figur 24 shows such a mixr, with two diods in ach spot normally occupid by on. This mixr, with a sufficintly high O driv lvl, will display low distortion. HSMS-282R IF out 80 hybrid ow pass filtr IF out Figur 2. oubl alancd Mixr. O in Figur 24. ow istortion alancd Mixr. Not 4. lan Rixon and Raymond W. Waugh, Supprssd Harmonic Powr tctor for ual and Phons, to b publishd. 8

9 Sampling pplications Th six lad HSMS 282P can b usd in a sampling circuit, as shown in Figur 25. s was th cas with th six lad HSMS 282R in th mixr, th opn bridg quad is closd with tracs on th circuit board. Th quad was not closd intrnally so that it could b usd in othr applications, such as illustratd in Figur 7. sampl point HSMS-282P quation () would b straightforward to solv but for th fact that diod forward voltag is a function of tmpratur as wll as forward currnt. Th quation for V f is: 600 (V f I f R s ) I f = I S nt whr n = idality factor T = tmpratur in K R s = diod sris rsistanc and I S (diod saturation currnt) is givn by sampling puls sampling circuit 2 I s = I 0 ( T ) 298 n 4060 ( T 298 ) Figur 25. Sampling ircuit. Thrmal onsidrations Th obvious advantag of th SOT 323 and SOT 363 ovr th SOT 23 and SOT 42 is combination of smallr siz and xtra lads. Howvr, th coppr ladfram in th SOT 3x3 has a thrmal conductivity four tims highr than th lloy 42 ladfram of th SOT 23 and SOT 43, which nabls th smallr packags to dissipat mor powr. Th maximum junction tmpratur for ths thr familis of Schottky diods is 50 undr all oprating conditions. Th following quation applis to th thrmal analysis of diods: Tj = (V f I f + P RF ) θ jc + T a () quation (4) is substitutd into quation (3), and quations () and (3) ar solvd simultanously to obtain th valu of junction tmpratur for givn valus of diod cas tmpratur, powr dissipation and RF powr dissipation. whr T j = junction tmpratur T a = diod cas tmpratur θ jc = thrmal rsistanc V f I f = powr dissipatd P RF = RF powr dissipatd Not that θ jc, th thrmal rsistanc from diod junction to th foot of th lads, is th sum of two componnt rsistancs, θ jc = θ pkg + θ chip (2) Packag thrmal rsistanc for th SOT 3x3 packag is approximatly 00 /W, and th chip thrmal rsistanc for th HSMS 282x family of diods is approximatly 40 /W. Th dsignr will hav to add in th thrmal rsistanc from diod cas to ambint a poor choic of circuit board matrial or hat sink dsign can mak this numbr vry high. Not 5. vago pplication Not 050, ow ost, Surfac Mount Powr imitrs. 9

10 iod urnout ny Schottky junction, b it an RF diod or th gat of a MSFT, is rlativly dlicat and can b burnd out with xcssiv RF powr. Many crystal vido rcivrs usd in RFI (tag) applications find thmslvs in poorly controlld nvironmnts whr high powr sourcs may b prsnt. xampls ar th aras around airport and F radars, narby ham radio oprators, th vicinity of a broadcast band transmittr, tc. In such nvironmnts, th Schottky diods of th rcivr can b protctd by a dvic known as a limitr diod. [5] Formrly availabl only in radar warning rcivrs and othr high cost lctronic warfar applications, ths diods hav bn adaptd to commrcial and consumr circuits. vago offrs a com plt lin of surfac mountabl PIN limitr diods. Most notably, our HSMP-4820 (SOT-23) can act as a vry fast (nanoscond) powr-snsitiv switch whn placd btwn th antnna and th Schottky diod, shorting out th RF circuit tmporarily and rflcting th xcssiv RF nrgy back out th antnna. ssmbly Instructions SOT-3x3 P Footprint Rcommndd P pad layouts for th miniatur SOT- 3x3 (S-70) packags ar shown in Figurs 26 and 27 (dimnsions ar in inchs). Ths layouts provid ampl allowanc for packag placmnt by automatd assmbly quipmnt without adding parasitics that could impair th prformanc imnsions in inchs Figur 26. Rcommndd P Pad ayout for vago s S70 3/SOT 323 Products imnsions in inchs Figur 27. Rcommndd P Pad ayout for vago's S70 6/SOT 363 Products. 0

11 SMT ssmbly Rliabl assmbly of surfac mount componnts is a complx procss that involvs many matrial, procss, and quipmnt factors, including: mthod of hating (.g., IR or vapor phas rflow, wav soldring, tc.) circuit board matrial, conductor thicknss and pattrn, typ of soldr alloy, and th thrmal conductivity and thrmal mass of componnts. omponnts with a low mass, such as th SOT packags, will rach soldr rflow tmpraturs fastr than thos with a gratr mass. vago s diods hav bn qualifid to th tim-tmpratur profil shown in Figur 28. This profil is rprsntativ of an IR rflow typ of surfac mount assmbly procss. ftr ramping up from room tmpratur, th circuit board with componnts attachd to it (hld in plac with soldr past) passs through on or mor prhat zons. Th prhat zons incras th tmpratur of th board and componnts to prvnt thrmal shock and bgin vaporating solvnts from th soldr past. Th rflow zon brifly lvats th tmpratur sufficintly to produc a rflow of th soldr. Th rats of chang of tmpratur for th ramp-up and cool-down zons ar chosn to b low nough to not caus dformation of th board or damag to componnts du to thrmal shock. Th maximum tmpratur in th rflow zon (T MX ) should not xcd 260. Ths paramtrs ar typical for a surfac mount assmbly procss for vago diods. s a gnral guidlin, th circuit board and componnts should b xposd only to th minimum tmpraturs and tims ncssary to achiv a uniform rflow of soldr. Tp Ramp-up tp ritical Zon T to Tp Tmpratur T Ts max Ts min ts Prhat t Ramp-down 25 t 25 to Pak Figur 28. Surfac Mount ssmbly Profil. Tim ad-fr Rflow Profil Rcommndation (IP/J J-ST-020) Rflow Paramtr ad-fr ssmbly vrag ramp-up rat (iquidus Tmpratur (T S(max) to Pak) 3 / scond max Prhat Tmpratur Min (T S(min) ) 50 Tmpratur Max (T S(max) ) 200 Tim (min to max) (t S ) sconds Ts(max) to T Ramp-up Rat 3 /scond max Tim maintaind abov: Tmpratur (T ) 27 Tim (t ) sconds Pak Tmpratur (T P ) /-5 Tim within 5 of actual sconds Pak tmpratur (t P ) Ramp-down Rat 6 /scond max Tim 25 to Pak Tmpratur 8 minuts max Not : ll tmpraturs rfr to topsid of th packag, masurd on th packag body surfac

12 Packag imnsions Outlin 23 (SOT-23) Outlin SOT-323 (S-70 3 ad) 2 XXX XXX IMNSIONS (mm) Nots: XXX-packag marking rawings ar not to scal SYMO 2 IMNSIONS (mm) MIN MX Nots: XXX-packag marking rawings ar not to scal SYMO MIN MX typical.30 typical Outlin 43 (SOT-43) Outlin SOT-363 (S-70 6 ad) 2 IMNSIONS (mm) XXX H SYMO H 2 b c MIN S MX Nots: XXX-packag marking rawings ar not to scal SYMO 2 IMNSIONS (mm) MIN MX b 2 c 2

13 vic Orintation R For Outlins SOT-23, -323 TOP VIW 4 mm N VIW RRIR TP 8 mm USR F IRTION OVR TP Not: "" rprsnts packag marking cod. "" rprsnts dat cod. For Outlin SOT-43 For Outlin SOT-363 TOP VIW 4 mm N VIW TOP VIW 4 mm N VIW 8 mm 8 mm Not: "" rprsnts packag marking cod. "" r prsnts dat cod. Not: "" rprsnts packag marking cod. "" rprsnts dat cod. 3

14 Tap imnsions and Product Orintation For Outlin SOT-23 P P 2 P 0 F W t 9 MX Ko 8 MX 3.5 MX 0 0 VITY PRFORTION RRIR TP SRIPTION SYMO SIZ (mm) SIZ (INHS) NGTH WITH PTH PITH OTTOM HO IMTR IMTR PITH POSITION WITH THIKNSS 0 0 K 0 P P 0 W t 3.5 ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ISTN TWN NTRIN VITY TO PRFORTION (WITH IRTION) VITY TO PRFORTION (NGTH IRTION) F P ± ± ± ± For Outlin SOT-43 P P0 P 2 F W t 9 M X K 0 9 MX 0 0 VITY PRFORTION SRIPTION SYMO SIZ (mm) SIZ (INHS) NGTH WITH PTH PITH OTTOM HO IMTR IMTR PITH POSITION 0 0 K 0 P P ± ± ± ± ± ± ± ± ± ± ± ± RRIR TP WITH THIKNSS W t ± ± ISTN VITY TO PRFORTION (WITH IRTION) VITY TO PRFORTION (NGTH IRTION) F P ± ± ± ±

15 Tap imnsions and Product Orintation For Outlins SOT-323, -363 P P 2 P 0 F W t (RRIR TP THIKNSS) T t (OVR TP THIKNSS) n K 0 n 0 0 VITY PRFORTION RRIR TP OVR TP ISTN NG SRIPTION SYMO SIZ (mm) SIZ (INHS) NGTH WITH PTH PITH OTTOM HO IMTR IMTR PITH POSITION WITH THIKNSS WITH TP THIKNSS VITY TO PRFORTION (WITH IRTION) VITY TO PRFORTION (NGTH IRTION) 0 0 K 0 P P ± ± ± ± ± ± ± 0.0 W 8.00 ± 0.30 t ± ± 0.0 T t ± 0.00 F 3.50 ± 0.05 P ± 0.05 FOR SOT-323 (S70-3 ) n 8 MX FOR SOT-363 (S70-6 ) 0 MX ± ± ± ± ± ± ± ± ± ± ± ± ± Part Numbr Ordring Information Part Numbr No. of vics ontainr HSMS-282x-TR2G " Rl HSMS-282x-TRG " Rl HSMS-282x-K G 00 antistatic bag x = 0, 2, 3, 4, 5, 7, 8, 9,,,, F, K,, M, N, P or R For product information and a complt list of distributors, plas go to our wb sit: vago, vago Tchnologis, and th logo ar tradmarks of vago Tchnologis in th Unitd Stats and othr countris. ata subjct to chang. opyright vago Tchnologis. ll rights rsrvd. Obsolts N V02-320N - Novmbr 26, 204