2SD1898 / 2SD1733 V CEO 80V I C 1.0A. Datasheet. NPN 1.0A 80V Middle Power Transistor. Outline. Features

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1 NPN.0 80V Middl Powr Transistor Datasht Faturs Paramtr V CEO ) Suitabl for Middl Powr Drivr 2) Complmntary PNP Typs : 2SB260 / 2SB8 3) Low V CE(sat) V CE(sat) = 0.4V Max. (I C /I B =500m/20m) 4) Lad Fr/RoHS Compliant. Valu 80V I C.0 Outlin MPT3 CPT3 Bas Collctor Emittr 2SD898 (SC-62) <SOT-89> Collctor Bas Emittr 2SD733 (SC-63) <SOT-428> Innr circuit Collctor Emittr Bas pplications Motor drivr, LED drivr Powr supply Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) 2SD898 MPT T SD733 CPT TL 330 Tap width (mm) 2 6 Basic ordring unit (pcs) 2,500 Marking,000 DF D733 / Rv.F

2 bsolut maximum ratings (Ta = 25 C) Paramtr Symbol Valus Unit Collctor-bas voltag Collctor-mittr voltag V CBO 20 V V CEO 80 V Emittr-bas voltag V EBO 5 V Collctor currnt DC Pulsd I C.0 I CP * 2.0 Powr dissipation 2SD898 2SD733 P D 0.5 *2 2.0 *3 *4 0 *5 W W W W Junction tmpratur T j 50 C Rang of storag tmpratur * Pw=20ms, duty=/2 *2 Each trminal mountd on a rfrnc land *3 Mountd on a cramic board ( mm) *4 Mountd on a substrat *5 T C =25 C T stg -55 to +50 C Elctrical charactristics (Ta = 25 C) Paramtr Collctor-mittr brakdown voltag Collctor-bas brakdown voltag Emittr-bas brakdown voltag Symbol Conditions Min. Typ. Max. Unit BV CEO I C = m V BV CBO I C = 50m V BV EBO I E = 50m V Collctor cut-off currnt I CBO V CB = 00V - - m Emittr cut-off currnt I EBO V EB = 4V - - m Collctor-mittr saturation voltag V CE(sat) I C = 500m, I B = 20m V DC currnt gain h FE *6 V CE = 3V, I C = Transition frquncy f T V CE = 0V, I E = -50m f=00mh Z MHz Output capacitanc C ob V CB = 0V, I E = 0 f = MHz pf h FE rank catgoris Rank Q R h FE 20 to to 390 2/ Rv.F

3 Elctrical charactristic curvs(ta = 25 C) Fig. Ground Emittr Propagation Charactristics Fig.2 Typical Output Charactristics V CE = 5V Pulsd Ta=00ºC 25ºC -40ºC COLLECTOR CURRENT : I C [] BSE TO EMITTER VOLTGE : V BE [V] COLECTOR TO EMITTE VOLTGE : V CE [V] Fig.3 DC Currnt Gain vs. Collctor Currnt(I) Fig.4 DC Currnt Gain vs. Collctor Currnt(II) 000 V CE = 3V Pulsd 000 Ta=25ºC Pulsd DC CURRENT GIN : h FE 00 Ta=00ºC 25ºC -40ºC DC CURRENT GIN : h FE 00 V CE = 3V V / Rv.F

4 Elctrical charactristic curvs(ta = 25 C) COLLECTOR-EMITTER STURTION VOLTGE : V CE(sat) [V] Fig.5 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (I) I C / I B = 20 Ta=00ºC 25ºC -40ºC COLLECTOR-EMITTER STURTION VOLTGE : V CE(sat) [V] Fig.6 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (II) Ta=25ºC I C / I B =20/ 0/ Fig.7 Bas-Emittr Saturation Voltag vs. Collctor Currnt 0 Fig.8 Gain Bandwidth Product vs. Emittr Currnt BSE-EMITTER STURTION VOLTGE : V BE(sat) [V] 0. Ta= -40ºC 25ºC 00ºC I C / I B = TRNSITION FREQUENCY : f T [MHz] EMITTER CURRENT : I E [m] 4/ Rv.F

5 Elctrical charactristic curvs(ta = 25 C) COLLECTOR OUTPUT CPCITNCE : Cob [pf] EMITTER INPUT CPCITNCE : Cib [pf] Fig.9 Emittr input capacitanc vs. Emittr-Bas Voltag Collctor output capacitanc vs. Collctor-Bas Voltag COLLECTOR - BSE VOLTGE : V CB [V] EMITTER - BSE VOLTGE : V EB [V] COLLECTOR CURRENT : I C [] Fig.0 Saf Oprating ra SD898 00ms DC (Mountd on a rfrnc land) ms 0ms Ta=25ºC Singl non rptitiv puls COLLECTOR TO EMITTER VOLTGE : V CE [V] Fig. Saf Oprating ra COLLECTOR CURRENT : I C [] SD733 00ms DC Ta=25ºC Singl non rptitiv puls ms 0ms COLLECTOR TO EMITTER VOLTGE : V CE [V] 5/ Rv.F

6 Dimnsions (Unit : mm) MPT3 D b HE L E E Lp x S b b2 c b4 β y S S l b3 b5 l2 l3 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MX MIN MX b b b c D E HE LE Lp x y MILIMETERS INCHES DIM MIN MX MIN MX b b b l l l β Dimnsion in mm / inchs / Rv.F

7 Dimnsions (Unit : mm) D b 2 c B CPT3 L3 b2 b3 L4 L E L2 H L Lp c b x B 3 l3 l2 l b6 b5 Dimnsion in mm / inchs Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MX MIN MX b b b b c c D E HE L L L L3 L Lp x DIM MILIMETERS INCHES MIN MX MIN MX b b l l l / Rv.F

8 Notic Nots ) 2) 3) 4) 5) 6) 7) 8) 9) 0) ) 2) 3) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : lthough ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. V/O dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US Export dministration Rgulations and th Forign Exchang and Forign Trad ct. 4) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm R02

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