UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-247D package Lead-Free utomotive Qualified* G E n-channel V E(ON) typ. =.32V @ V GE = 5V, = 3 Benefits Generation 4 GBT's offer highest efficiency available GBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBT's E G URG4P40S E TO 247D G E Gate ollector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity URG4P40S-E TO-247D Tube 25 URG4P40S-E bsolute Maximum Ratings Parameter Max. Units V ES ollector-to-emitter Voltage 600 V @ T = 25 ontinuous ollector urrent 60 @ T = 00 ontinuous ollector urrent 3 M Pulse ollector urrent 20 LM lamped nductive Load urrent 20 V GE ontinuous Gate-to-Emitter Voltage ±20 V E RV Reverse Voltage valanche Energy 5 P D @ T = 25 Maximum Power Dissipation 60 P D @ T = 00 Maximum Power Dissipation 65 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range Soldering Temperature, for 0 sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw 0 lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R J Thermal Resistance Junction-to-ase 0.77 R S Thermal Resistance, ase-to-sink (flat, greased surface) 0.24 /W R J Thermal Resistance, Junction-to-mbient (typical socket mount) 40 Wt Weight 6 (0.2) g (oz) * Qualification standard can be found at http:// www.irf.com/ www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 600 V GE = 0V, = 250µ V V (BR)ES Emitter-to-ollector Breakdown Voltage 8 V GE = 0V, =.0 V (BR)ES / T J Temperature oeff. of Breakdown Voltage 0.75 V/ V GE = 0V, = m V E(on) ollector-to-emitter Saturation Voltage.32.5 = 3, V GE = 5V, T J = 25.68 V = 60, V GE = 5V, See Fig. 2,5.32 = 3, V GE = 5V, T J = 50 V GE(th) Gate Threshold Voltage 3.0 6.0 V V E = V GE, = 250µ V GE(th) / T J Threshold Voltage Temperature oeff. -9.3 mv/ V E = V GE, = 250µ gfe Forward Transconductance 2 2 S V E = 00V, = 3 250 V GE = 0V, V E = 600V ES ollector-to-emitter Leakage urrent 2.0 µ V GE = 0V, V E = 0V,T J = 25 000 V GE = 0V, V E = 600V, T J = 50 GES Gate-to-Emitter Leakage urrent ±00 n V GE = ±20V Switching haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max Units onditions Q g Total Gate harge (turn-on) 00 50 = 3 Q ge Gate-to-Emitter harge (turn-on) 4 2 n V GE = 5V See Fig.8 Q gc Gate-to-ollector harge (turn-on) 34 5 V = 400V t d(on) Turn-On delay time 22 t r Rise time 8 = 3, V = 480V, V GE =5V ns t d(off) Turn-Off delay time 650 980 R G = 0, T J = 25 t f Fall time 380 570 E on Turn-On Switching Loss 0.45 Energy losses include tail E off Turn-Off Switching Loss 6.5 mj See Fig. 0,, 3, 4 E ts Total Switching Loss 6.95 9.9 t d(on) Turn-On delay time 23 = 3, V = 480V, V GE =5V t r Rise time 2 R G = 0, T J = 50 ns t d(off) Turn-Off delay time 000 Energy losses include tail t f Fall time 940 E ts Total Switching Loss 2 mj See Fig. 3, 4 L E nternal Emitter nductance 3 nh Measured 5mm from package ies nput apacitance 2200 V GE = 0V oes Output apacitance 40 pf V = 30V See Fig. 7 res Reverse Transfer apacitance 26 f =.0Mhz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = 0µH, R G = 0, (See fig. 3a) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E 80 Load urrent () 60 40 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 35W Triangular wave: lamp voltage: 80% of rated 20 deal diodes 0 0. 0 00 f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 000 000, ollector-to-emitter urrent () 00 T J = 25 0 T J = 50 V GE = 5V 20µs PULSE WDTH 0. 0 V E, ollector-to-emitter Voltage (V), ollector-to-emitter urrent () 00 0 T J = 50 T J = 25 V = 50V 5µs PULSE WDTH 5 6 7 8 9 0 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E Maximum D ollector urrent () 60 50 40 30 20 0 V GE = 5V V E, ollector-to-emitter Voltage (V) 2.0.5 V GE = 5V 80µs PULSE WDTH = 62 = 3 = 6 0.0 25 50 75 00 25 50-60 -40-20 0 20 40 60 80 00 20 40 60 T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, Junction Temperature ( ) J Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SNGLE PULSE (THERML RESPONSE) 2. Peak T J = P DMx Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase 4 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E, apacitance (pf) 4000 3000 2000 000 V GE = 0V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V E = 400V = 3 0 0 00 V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage 0 0 20 40 60 80 00 20 Q g, Total Gate harge (n) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 7.8 7.7 7.6 7.5 7.4 V = 480V V GE = 5V T J = 25 = 3 Total Switching Losses (mj) 00 0 R V V G GE = 0 = 5V = 480V = 62 = 3 = 6 7.3 0 0 20 30 40 50 60 R G, Gate Resistance ( ) -60-40 -20 0 20 40 60 80 00 20 40 60 T, Junction Temperature ( ) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature 5 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E Total Switching Losses (mj) 30 20 0 R G = 0 T J = 50 V = 480V V GE = 5V, ollector-to-emitter urrent () 000 00 0 V GE = 20V T = 25 J SFE OPERTNG RE 0 0 0 20 30 40 50 60 70, ollector-to-emitter urrent () Fig. - Typical Switching Losses vs. ollector-to-emitter urrent 0 00 000 V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SO 6 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E 50V 000V L V * D.U.T. 0-480V 480µF 960V RL = 480V 4 X @25 * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit L Driver* V D.U.T. 50V 000V * Driver same type as D.U.T., V = 480V Fig. 4a - Switching Loss Test ircuit Fig. 4b - Switching Loss Waveforms 7 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E TO-247D Package Outline Dimensions are shown in millimeters (inches) TO-247D Part Marking nformation Part Number R Logo UG4P40S-E YWW XX XX Date ode Y= Year WW= Work Week = utomotive, Lead Free Lot ode TO-247D package is not recommended for Surface Mount pplication. Note: For the most current drawing please refer to R website at http://www.irf.com/package/ 8 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
URG4P40S-E Qualification nformation Qualification Level utomotive (per E-Q0) omments: This part number(s) passed utomotive qualification. R s ndustrial and onsumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level TO-247D N/ Human Body Model lass H (+/- 2000V) E-Q0-00 ESD harged Device Model lass 5 (+/- 2000V) E-Q0-005 RoHS ompliant Yes Qualification standards can be found at nternational Rectifier s web site: http//www.irf.com/ Exceptions to E-Q0 requirements are noted in the qualification report. 9 www.irf.com 204 nternational Rectifier Submit Datasheet Feedback March 3, 204
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