Type Marking Pin Configuration Package BCP54 BCP54-16 BCP55 BCP55-16 BCP56-10 BCP =C 2=C 2=C 2=C 2=C 2=C 1=B 1=B 1=B 1=B 1=B 1=B

Similar documents
Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W

BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U

45 V, 100 ma NPN/PNP general-purpose transistor

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

40 V, 200 ma NPN switching transistor

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

SIPMOS Small-Signal-Transistor

65 V, 100 ma PNP/PNP general-purpose transistor

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

2PD601ARL; 2PD601ASL

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV.

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

BC807; BC807W; BC327

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

OptiMOS 3 Power-Transistor

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

45 V, 100 ma NPN general-purpose transistors

TIP31, TIP32 High Power Bipolar Transistor

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

BD135 - BD136 BD139 - BD140

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

OptiMOS Power-Transistor Product Summary

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

Silicon NPN Phototransistor

OptiMOS TM Power-Transistor

ST High voltage fast-switching NPN power transistor. Features. Applications. Description

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

Optocoupler, Phototransistor Output, With Base Connection

OptiMOS 3 Power-Transistor

BUX48 High Power Bipolar Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

BUX48/48A BUV48A/V48AFI

Optocoupler, Phototransistor Output, with Base Connection

NPN wideband transistor in a SOT89 plastic package.

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C

IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

BC107/ BC108/ BC109 Low Power Bipolar Transistors

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C

NPN wideband silicon RF transistor

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

NPN wideband silicon germanium RF transistor

Y.LIN ELECTRONICS CO.,LTD.

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009

AT Up to 6 GHz Low Noise Silicon Bipolar Transistor

ULN2801A, ULN2802A, ULN2803A, ULN2804A

CoolMOS TM Power Transistor

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438

Low frequency transistor ( 20V, 5A)

PHOTOTRANSISTOR OPTOCOUPLERS

Reflective Optical Sensor with Transistor Output

Optocoupler, Phototransistor Output, with Base Connection

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C

P D Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

Final data. Maximum Ratings Parameter Symbol Value Unit

NPN General Purpose Transistor

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, with Base Connection

SPW32N50C3. Cool MOS Power Transistor V T jmax 560 V

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

Silicon NPN Phototransistor

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

4N25 Phototransistor Optocoupler General Purpose Type

DATA SHEET. BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Dec 04

RGB Wall Washer Using ILD4035

Reflective Optical Sensor with Transistor Output

MC34063AB, MC34063AC, MC34063EB, MC34063EC

Transcription:

BCP4...BCP6... NPN Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP...BCP (PNP) Pbfree (RoHS compliant) package Qualified according AEC Q Type Marking Pin Configuration Package BCP4 BCP46 BCP BCP6 BCP6 BCP66 Marking is the same as the typename

BCP4...BCP6... Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V BCP4 BCP BCP6 4 6 8 Collectorbase voltage BCP4 BCP BCP6 V CBO 4 6 Emitterbase voltage V EBO Collector current I C A Peak collector current, t p ms I CM. Base current I B ma Peak base current I BM Total power dissipation T S C P tot W Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation)

BCP4...BCP6... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B =, BCP4... I C = ma, I B =, BCP... I C = ma, I B =, BCP6, 6 4 6 8 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BCP4... 4 I C = µa, I E =, BCP... 6 I C = µa, I E =, BCP6, 6 Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E = V CB = V, I E =, T A = C DC current gain ) I C = ma, V CE = V I C = ma, V CE = V, BCP4/BCP I C = ma, V CE = V, BCP6 I C = ma, V CE = V, BCP46...BCP66 I C = ma, V CE = V V (BR)EBO I CBO h FE. 4 6 6 6 µa Collectoremitter saturation voltage ) I C = ma, I B = ma Baseemitter voltage ) I C = ma, V CE = V AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz V CEsat. V V BE(ON) f T MHz Pulse test: t < µs; D < %

BCP4...BCP6... DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = BCP 4...6 EHP68 4 BCP 4...6 EHP7 h FE Ι C ma C C C C C C ma Ι C 4..4.6 V.8 V CEsat Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = Collector cutoff current I CBO = ƒ(t A ) V CBO = V 4 BCP 4...6 EHP7 4 BCP 4...6 EHP69 Ι C ma Ι CBO na max C C C typ..4.6.8 V. C V BEsat T A 4

BCP4...BCP6... Transition frequency f T = ƒ(i C ) V CE = V Total power dissipation P tot = ƒ(t S ) BCP 4...6 EHP67.4 f T MHz W Ptot.6..8.4 ma Permissible Pulse Load R thjs = ƒ(t p ) Ι C 4 6 7 9 C T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) RthJS D =,,,,,,, Ptotmax/PtotDC D =....... 6 4 s t p 6 4 s t p

Package BCP4...BCP6... Package Outline A 6. ±. ±.. MAX..6±. 4 7±. MAX.. ±. B Foot Print.7 ±.. M A 4.6... MIN.. M.8... B ±.4.4 4.8.4 Marking Layout (Example).. Manufacturer, 4 CW Date code (YYWW) BCP6 Type code Pin Packing Reel ø8 mm =. Pieces/Reel Reel ø mm = 4. Pieces/Reel 8. MAX. 7. Pin 6.8.7 6

BCP4...BCP6... Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7